PANASONIC MAS3132E

Switching Diodes
MAS3132E
Silicon epitaxial planar type
Unit: mm
For high-speed switching circuits
0.10+0.05
–0.02
0.33+0.05
–0.02
0.80±0.05
5˚
1.20±0.05
• Two elements are contained in one package, allowing highdensity mounting
• Short reverse recovery time trr
• Small terminal capacitance Ct
0.15 min.
3
■ Features
2
0.15 min.
1
0.23+0.05
–0.02
(0.40) (0.40)
0.80±0.05
1.20±0.05
5˚
Forward current
Single
Rating
Unit
VR
80
V
VRM
80
V
IF
100
mA
Double
Peak forward current Single
forward surge current
Single
*
1: Anode 1
2: Anode 2
3: Cathode 1, 2
SSSMini3-F1 Package
150
IFM
225
Double
Non-repetitive peak
0.15 max.
Maximum peak reverse voltage
Symbol
0 to 0.01
Parameter
Reverse voltage
0.52±0.03
■ Absolute Maximum Ratings Ta = 25°C
mA
Marking Symbol: MU
340
IFSM
500
Double
mA
Internal Connection
750
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
3
Note) *: t = 1 s
1
2
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
VF
IF = 100 mA
Reverse voltage
VR
IR = 100 µA
Reverse current
IR
VR = 75 V
100
nA
Terminal capacitance
Ct
VR = 0 V, f = 1 MHz
2
pF
trr
IF = 10 mA, VR = 6 V
Irr = 0.1 IR , RL = 100 Ω
3
ns
Reverse recovery time
*
1.2
80
V
V
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring method for diodes.
2. Absolute frequency of input and output is 100 MHz.
3. *: trr measurement circuit
Bias Application Unit N-50BU
Input Pulse
tp
tr
10%
A
VR
Pulse Generator
(PG-10N)
Rs = 50 Ω
Publication date: November 2003
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
SKF00065BED
Output Pulse
t
IF
trr
t
Irr = 0.1 IR
IF = 10 mA
VR = 6 V
RL = 100 Ω
1
MAS3132E
I R  VR
102
104
10
Ta = 150°C
1
100°C
25°C
−20°C
10−1
10−2
0
0.2
0.4
0.6
0.8
1.0
Ta = 150°C
100°C
103
102
25°C
1
1.2
0
20
80
100
0
−40
120
0
40
10
0.8
0.6
0.4
0.2
0
160
Ambient temperature Ta (°C)
200
0
20
40
60
80
100
Reverse voltage VR (V)
SKF00065BED
120
160
200
IF(surge)  tW
103
Ta = 25°C
IF(surge)
Forward surge current IF(surge) (A)
102
120
80
Ambient temperature Ta (°C)
1.0
103
80
3 mA
f = 1 MHz
Ta = 25°C
35 V
6V
Terminal capacitance Ct (pF)
Reverse current IR (nA)
60
VR = 75 V
40
10 mA
0.4
Ct  VR
104
2
40
1.2
0
IF = 100 mA
0.8
Reverse voltage VR (V)
IR  T a
1
−40
1.2
10
Forward voltage VF (V)
105
VF  T a
1.6
Forward voltage VF (V)
105
Reverse current IR (nA)
Forward current IF (mA)
IF  V F
103
120
tW
Non repetitive
102
10
1
10−1
10−1
1
Pulse width tW (ms)
10
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
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the products or technical information described in this material and controlled under the "Foreign Exchange
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applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical
information as described in this material.
(4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are
required, or if the failure or malfunction of the products may directly jeopardize life or harm the human
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• Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without notice for
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not
be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such
as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent
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2003 SEP