Data Sheet

PESDxL1BA series
Low capacitance bidirectional ESD protection diodes in
SOD323
Rev. 02 — 20 August 2009
Product data sheet
1. Product profile
1.1 General description
Bidirectional ElectroStatic Discharge (ESD) protection diodes in a very small SOD323
(SC-76) SMD plastic package designed to protect one signal line from the damage
caused by ESD and other transients.
1.2 Features
n
n
n
n
Bidirectional ESD protection of one line
Max. peak pulse power: Ppp = 500 W
Low clamping voltage: V(CL)R = 26 V
Ultra low leakage current: IRM < 0.09 µA
n
n
n
n
ESD protection > 23 kV
IEC 61000-4-2, level 4 (ESD)
IEC 61000-4-5 (surge); Ipp = 18 A
Very small SMD plastic package
1.3 Applications
n Computers and peripherals
n Communication systems
n Audio and video equipment
n Data lines
n CAN bus protection
1.4 Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
VRWM
reverse stand-off voltage
Cd
Min
Typ
Max
Unit
PESD3V3L1BA
-
-
3.3
V
PESD5V0L1BA
-
-
5.0
V
PESD12VL1BA
-
-
12
V
PESD15VL1BA
-
-
15
V
PESD24VL1BA
-
-
24
V
PESD3V3L1BA
-
101
-
pF
PESD5V0L1BA
-
75
-
pF
PESD12VL1BA
-
19
-
pF
PESD15VL1BA
-
16
-
pF
PESD24VL1BA
-
11
-
pF
diode capacitance
Conditions
VR = 0 V;
f = 1 MHz
PESDxL1BA series
NXP Semiconductors
Low capacitance bidirectional ESD protection diodes in SOD323
2. Pinning information
Table 2.
Pinning
Pin
Description
1
cathode 1
2
cathode 2
Simplified outline
1
Symbol
2
1
2
sym045
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
PESDxL1BA series SC-76
Description
Version
plastic surface mounted package; 2 leads
SOD323
4. Marking
Table 4.
Marking codes
Type number
Marking code
PESD3V3L1BA
AB
PESD5V0L1BA
AC
PESD12VL1BA
AD
PESD15VL1BA
AE
PESD24VL1BA
AF
PESDXL1BA_SER_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 20 August 2009
2 of 15
PESDxL1BA series
NXP Semiconductors
Low capacitance bidirectional ESD protection diodes in SOD323
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Min
Max
Unit
PESD3V3L1BA
-
500
W
PESD5V0L1BA
-
500
W
PESD12VL1BA
-
200
W
PESD15VL1BA
-
200
W
-
200
W
PESD3V3L1BA
-
18
A
PESD5V0L1BA
-
15
A
PESD12VL1BA
-
5
A
PESD15VL1BA
-
5
A
PESD24VL1BA
-
3
A
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
−65
+150
°C
Tstg
storage temperature
−65
+150
°C
Ppp
Parameter
Conditions
peak pulse power
8/20 µs
[1]
PESD24VL1BA
peak pulse current
Ipp
[1]
Symbol
ESD
ESD maximum ratings
Parameter
Conditions
Min
Max
Unit
PESD3V3L1BA
-
30
kV
PESD5V0L1BA
-
30
kV
PESD12VL1BA
-
30
kV
PESD15VL1BA
-
30
kV
PESD24VL1BA
-
23
kV
-
10
kV
electrostatic discharge capability
PESDxL1BA series
IEC 61000-4-2
(contact discharge)
[1]
HBM MIL-Std 883
Device stressed with ten non-repetitive ESD pulses; see Figure 2.
Table 7.
ESD standards compliance
Standard
Conditions
IEC 61000-4-2; level 4 (ESD); Figure 2
> 15 kV (air); > 8 kV (contact)
HBM MIL-Std 883; class 3
> 4 kV
PESDXL1BA_SER_2
Product data sheet
[1]
Non-repetitive current pulse 8/20 µs exponential decay waveform; see Figure 1.
Table 6.
[1]
8/20 µs
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 20 August 2009
3 of 15
PESDxL1BA series
NXP Semiconductors
Low capacitance bidirectional ESD protection diodes in SOD323
001aaa631
IPP
001aaa630
120
100 %
90 %
100 % IPP; 8 µs
IPP
(%)
80
e−t
50 % IPP; 20 µs
40
10 %
0
10
20
30
30 ns
40
t (µs)
Fig 1.
t
tr = 0.7 ns to 1 ns
0
60 ns
8/20 µs pulse waveform according to
IEC 61000-4-5
Fig 2.
ESD pulse waveform according to
IEC 61000-4-2
PESDXL1BA_SER_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 20 August 2009
4 of 15
PESDxL1BA series
NXP Semiconductors
Low capacitance bidirectional ESD protection diodes in SOD323
6. Characteristics
Table 8.
Characteristics
Tamb = 25 °C unless otherwise specified
Symbol
Parameter
VRWM
reverse stand-off voltage
Conditions
Min
Typ
Max
Unit
PESD3V3L1BA
-
-
3.3
V
PESD5V0L1BA
-
-
5.0
V
PESD12VL1BA
-
-
12
V
PESD15VL1BA
-
-
15
V
-
-
24
V
PESD24VL1BA
IRM
V(BR)
reverse leakage current
see Figure 7
PESD3V3L1BA
VRWM = 3.3 V
-
0.09
2
µA
PESD5V0L1BA
VRWM = 5.0 V
-
0.01
1
µA
PESD12VL1BA
VRWM = 12 V
-
<1
50
nA
PESD15VL1BA
VRWM = 15 V
-
<1
50
nA
PESD24VL1BA
VRWM = 24 V
-
<1
50
nA
breakdown voltage
IR = 5 mA
PESD3V3L1BA
5.8
6.4
6.9
V
PESD5V0L1BA
7.0
7.6
8.2
V
PESD12VL1BA
14.2
15.9
16.7
V
PESD15VL1BA
17.1
18.9
20.3
V
25.4
27.8
30.3
V
PESD3V3L1BA
-
101
-
pF
PESD5V0L1BA
-
75
-
pF
PESD12VL1BA
-
19
-
pF
PESD15VL1BA
-
16
-
pF
-
11
-
pF
Ipp = 1 A
-
-
8
V
Ipp = 18 A
-
-
26
V
Ipp = 1 A
-
-
10
V
Ipp = 15 A
-
-
33
V
Ipp = 1 A
-
-
20
V
Ipp = 5A
-
-
37
V
Ipp = 1 A
-
-
25
V
Ipp = 5 A
-
-
44
V
Ipp = 1 A
-
-
40
V
Ipp = 3 A
-
-
70
V
PESD24VL1BA
Cd
diode capacitance
VR = 0 V; f = 1 MHz;
see Figure 5 and 6
PESD24VL1BA
V(CL)R
[1]
clamping voltage
PESD3V3L1BA
PESD5V0L1BA
PESD12VL1BA
PESD15VL1BA
PESD24VL1BA
PESDXL1BA_SER_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 20 August 2009
5 of 15
PESDxL1BA series
NXP Semiconductors
Low capacitance bidirectional ESD protection diodes in SOD323
Table 8.
Characteristics …continued
Tamb = 25 °C unless otherwise specified
Symbol
Parameter
Conditions
rdif
differential resistance
IR = 1 mA
[1]
Min
Typ
Max
Unit
PESD3V3L1BA
-
-
400
Ω
PESD5V0L1BA
-
-
80
Ω
PESD12VL1BA
-
-
200
Ω
PESD15VL1BA
-
-
225
Ω
PESD24VL1BA
-
-
300
Ω
Non-repetitive current pulse 8/20 µs exponential decay waveform; see Figure 1.
PESDXL1BA_SER_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 20 August 2009
6 of 15
PESDxL1BA series
NXP Semiconductors
Low capacitance bidirectional ESD protection diodes in SOD323
006aaa066
104
001aaa193
1.2
PPP
PPP
(W)
PPP(25°C)
103
0.8
(1)
102
0.4
(2)
10
1
102
10
103
0
104
0
50
100
150
t p (µs)
200
Tj (°C)
Tamb = 25 °C
tp = 8/20 µs exponential decay waveform; see Figure 1
(1) PESD3V3L1BA and PESD5V0L1BA
(2) PESD12VL1BA; PESD15VL1BA; PESD24VL1BA
Fig 3.
Peak pulse power dissipation as a function of
pulse time; typical values
Fig 4.
006aaa067
110
Cd
(pF)
100
Relative variation of peak pulse power as a
function of junction temperature; typical
values
006aaa068
20
Cd
(pF)
16
90
(1)
12
(1)
80
(2)
8
70
(3)
(2)
60
4
0
50
0
1
2
3
4
5
0
5
10
15
20
25
VR (V)
VR (V)
Tamb = 25 °C; f = 1 MHz
Tamb = 25 °C; f = 1 MHz
(1) PESD3V3L1BA
(1) PESD12VL1BA
(2) PESD5V0L1BA
(2) PESD15VL1BA
(3) PESD24VL1BA
Fig 5.
Diode capacitance as a function of reverse
voltage; typical values
Fig 6.
Diode capacitance as a function of reverse
voltage; typical values
PESDXL1BA_SER_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 20 August 2009
7 of 15
PESDxL1BA series
NXP Semiconductors
Low capacitance bidirectional ESD protection diodes in SOD323
006aaa069
10
(1)
IRM
IRM(25°C)
1
10−1
−100
−50
0
50
100
150
Tj (°C)
(1) PESD3V3L1BA; PESD5V0L1BA
For PESD12VL1BA, PESD15VL1BA and PESD24VL1BA, IRM < 20 nA at 150 °C
Fig 7.
Relative variation of reverse leakage current as a function of junction temperature; typical values
PESDXL1BA_SER_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 20 August 2009
8 of 15
PESDxL1BA series
NXP Semiconductors
Low capacitance bidirectional ESD protection diodes in SOD323
ESD TESTER
RZ
450 Ω
CZ
4 GHz DIGITAL
OSCILLOSCOPE
RG 223/U
50 Ω coax
10×
ATTENUATOR
50 Ω
1
DUT: PESDxL1BA
IEC 61000-4-2 network
CZ = 150 pF; RZ = 330 Ω
2
vertical scale = 20 V/div; horizontal scale = 50 ns/div
vertical scale = 200 V/div
horizontal scale = 50 ns/div
PESD24VL1BA
GND
PESD15VL1BA
GND
PESD12VL1BA
GND
PESD5V0L1BA
GND
GND
PESD3V3L1BA
GND
unclamped +1 kV ESD voltage waveform
(IEC 61000-4-2 network)
clamped +1 kV ESD voltage waveform
(IEC 61000-4-2 network)
vertical scale = 20 V/div; horizontal scale = 50 ns/div
GND
GND
PESD3V3L1BA
GND
PESD5V0L1BA
GND
PESD12VL1BA
GND
PESD15VL1BA
GND
PESD24VL1BA
vertical scale = 200 V/div
horizontal scale = 50 ns/div
unclamped −1 kV ESD voltage waveform
(IEC 61000-4-2 network)
Fig 8.
clamped −1 kV ESD voltage waveform
(IEC 61000-4-2 network)
006aaa070
ESD clamping test setup and waveforms
PESDXL1BA_SER_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 20 August 2009
9 of 15
PESDxL1BA series
NXP Semiconductors
Low capacitance bidirectional ESD protection diodes in SOD323
7. Application information
The PESDxL1BA series is designed for bidirectional protection of one signal line from the
damage caused by ElectroStatic Discharge (ESD) and surge pulses. The PESDxL1BA
series may be used on lines where the signal polarity is above and below ground. The
PESDxL1BA series provides a surge capability of up to 500 W per line for a 8/20 µs
waveform.
line to be protected
PESDxL1BA
006aaa071
ground
Fig 9.
Typical application: Bidirectional protection of one signal line
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)
and surge transients. The following guidelines are recommended:
1. Place the protection device as close to the input terminal or connector as possible.
2. The path length between the protection device and the protected line should be
minimized.
3. Keep parallel signal paths to a minimum.
4. Avoid running protected conductors in parallel with unprotected conductor.
5. Minimize all printed-circuit board conductive loops including power and ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Ground planes should be used whenever possible. For multilayer printed-circuit
boards, use ground vias.
PESDXL1BA_SER_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 20 August 2009
10 of 15
PESDxL1BA series
NXP Semiconductors
Low capacitance bidirectional ESD protection diodes in SOD323
8. Package outline
Plastic surface-mounted package; 2 leads
SOD323
A
D
E
X
v
HD
M
A
Q
1
2
bp
A
A1
(1)
c
Lp
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
HD
Lp
Q
v
mm
1.1
0.8
0.05
0.40
0.25
0.25
0.10
1.8
1.6
1.35
1.15
2.7
2.3
0.45
0.15
0.25
0.15
0.2
Note
1. The marking bar indicates the cathode
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
SOD323
JEITA
SC-76
EUROPEAN
PROJECTION
ISSUE DATE
03-12-17
06-03-16
Fig 10. Package outline SOD323 (SC-76)
PESDXL1BA_SER_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 20 August 2009
11 of 15
PESDxL1BA series
NXP Semiconductors
Low capacitance bidirectional ESD protection diodes in SOD323
9. Packing information
Table 9.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
PESDxL1BA series
[1]
Package
SOD323
Description
4 mm pitch, 8 mm tape and reel
Packing quantity
3000
10000
-115
-135
For further information and the availability of packing methods, see Section 12.
PESDXL1BA_SER_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 20 August 2009
12 of 15
PESDxL1BA series
NXP Semiconductors
Low capacitance bidirectional ESD protection diodes in SOD323
10. Revision history
Table 10.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PESDXL1BA_SER_2
20090820
Product data sheet
-
PESDXL1BA_SER_1
Modifications:
PESDXL1BA_SER_1
•
This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
•
Figure 10 “Package outline SOD323 (SC-76)”: updated
20041004
Product data sheet
PESDXL1BA_SER_2
Product data sheet
-
-
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 20 August 2009
13 of 15
PESDxL1BA series
NXP Semiconductors
Low capacitance bidirectional ESD protection diodes in SOD323
11. Legal information
11.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
11.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
11.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
11.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
12. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
PESDXL1BA_SER_2
Product data sheet
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Rev. 02 — 20 August 2009
14 of 15
PESDxL1BA series
NXP Semiconductors
Low capacitance bidirectional ESD protection diodes in SOD323
13. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
11
11.1
11.2
11.3
11.4
12
13
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Application information. . . . . . . . . . . . . . . . . . 10
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11
Packing information. . . . . . . . . . . . . . . . . . . . . 12
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 13
Legal information. . . . . . . . . . . . . . . . . . . . . . . 14
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Contact information. . . . . . . . . . . . . . . . . . . . . 14
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 20 August 2009
Document identifier: PESDXL1BA_SER_2
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