VCAN26A2-03G www.vishay.com Vishay Semiconductors Bidirectional Symmetrical (BiSy) Low Capacitance, Dual-Line ESD-Protection Diode in SOT-323 FEATURES • For CAN and FLEX-Bus applications 3 • Small SOT-323 package • 2-line ESD-protection 1 2 • Working range ± 26.5 V 22742 • Low leakage current IR < 0.05 μA SOT-323 22743 • Low load capacitance CD < 15 pF • ESD-protection acc. IEC 61000-4-2 ± 30 kV contact discharge ± 30 kV air discharge MARKING (example only) WW VY ABC • ESD capability according to AEC-Q101: human body model: class H3B: > 8 kV 22744 • e3 - pins plated with tin (Sn) ABC = type code (see table below) WW = date code working week VY = date code year • AEC-Q101 qualified available • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 ORDERING INFORMATION ENVIRONMENTAL AND QUALITY CODE PART NUMBER (EXAMPLE) AEC-Q101 QUALIFIED RoHS-COMPLIANT + LEAD (Pb)-FREE TERMINATIONS STANDARD GREEN PACKAGING CODE TIN PLATED ORDERING CODE (EXAMPLE) 3K PER 7" REEL 10K PER 13" REEL (8 mm TAPE) (8 mm TAPE) 15K/BOX = MOQ 10K/BOX = MOQ VCAN26A2-03G - E 3 -08 VCAN26A2-03G-E3-08 VCAN26A2-03G H E 3 -08 VCAN26A2-03G - E 3 -18 VCAN26A2-03G-E3-18 VCAN26A2-03G H E 3 -18 VCAN26A2-03GHE3-18 VCAN26A2-03GHE3-08 PACKAGE DATA DEVICE NAME PACKAGE NAME TYPE CODE WEIGHT MOLDING COMPOUND FLAMMABILITY RATING MOISTURE SENSITIVITY LEVEL SOLDERING CONDITIONS VCAN26A2-03G SOT-323 6A2 5.65 mg UL 94 V-0 MSL level 1 (according J-STD-020) Peak temperature max. 260 °C ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITIONS SYMBOL Peak pulse current TA = 25 °C, acc. IEC 61000-4-5; tp = 8/20 μs; single shot IPPM 3 A Peak pulse power TA = 25 °C; pin 1 or 2 to pin 3; acc. IEC 61000-4-5; tp = 8/20 μs; single shot PPP 150 W ± 30 kV ± 30 kV TJ -55 to +150 °C TSTG -55 to +150 °C ESD immunity Operating temperature Storage temperature Rev. 1.2, 23-Feb-16 Contact discharge acc. IEC 61000-4-2; 10 pulses, TA = 25 °C Air discharge acc. IEC 61000-4-2; 10 pulses, TA = 25 °C Junction temperature VESD VALUE UNIT Document Number: 85894 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VCAN26A2-03G www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (pin 1 to 3, 3 to 1, 2 to 3, or 3 to 2) (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. Number of lines which can be protected Nchannel - Max. reverse working voltage VRWM - Reverse voltage At IR = 0.05 μA VR 26.5 - - V Reverse current At VRWM = 26.5 V IR - - 0.05 μA At IR = 1 mA VBR 28 30 32 V Protection paths Reverse stand-off voltage Reverse breakdown voltage UNIT - 2 lines - 26.5 V At IPP 1 A; tp = 8/20 μs VC - 33 40 V At IPP = IPPM = 3 A; tp = 8/20 μs VC - 40 50 V At VR = 0 V, f = 1 MHz CD - 10 15 pF Diode capacitance matching at VR = 0 V, TJ = -40 °C to 125 °C / CD13 vs. CD23 CD - - 2 pF Reverse clamping voltage Capacitance MAX. TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 120 % 12 Pin 1-3 or 2-3 f = 1MHz Rise time = 0.7 ns to 1 ns 10 8 80 % CD (pF) Discharge Current IESD 100 % 60 % 53 % 6 4 40 % 27 % 2 20 % 0% -10 0 10 20 30 40 50 60 70 80 90 100 -30 Time (ns) 20557 -10 0 10 20 0 30 VR (V) 22757 Fig. 1 - ESD Discharge Current Wave Form acc. IEC 61000-4-2 (330 / 150 pF) Fig. 3 - Typical Capacitance CD vs. Reverse Voltage VR 35 8 µs to 100 % 100 % -20 Pin 1-3 or 2-3 or 3-2 30 80 % VR (V) 25 IPPM 60 % 20 µs to 50 % 20 15 40 % 10 20 % 5 0% 0 20548 10 20 30 40 Time (µs) Fig. 2 - 8/20 μs Peak Pulse Current Wave Form acc. IEC 61000-4-5 Rev. 1.2, 23-Feb-16 0 0.01 22759 0.1 1 10 100 1000 10 000 IR (μA) Fig. 4 - Typical Reverse Voltage VR vs. Reverse Current IR Document Number: 85894 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VCAN26A2-03G www.vishay.com Vishay Semiconductors 45 120 Pin 1-3 or 2-3 or 3-1 or 3-2 40 Transmission Line Pulse TLP: tp = 100 ns Pin 1-3 or 2-3 100 35 80 VC-TLP (V) VC (V) 30 25 20 60 15 Pin 3-1or 3-2 40 10 20 Measured acc. IEC 61000-4-5 (8/20 μs - wave form) 5 0 0 0 1 2 3 4 0 IPP (A) 22758 10 20 22760 Fig. 5 - Typical Peak Clamping Voltage VC vs. Peak Pulse Current IPP 30 40 50 60 ITLP (A) Fig. 6 - Typical Clamping Voltage VC-TLP vs. Pulse Current ITLP 8° 0° 0.15 (0.006) 0.08 (0.003) 0.0 (0.000) 0.1 (0.004) 2.0 (0.079) 0.8 (0.031) 1.1 (0.043) 2.2 (0.087) 0.8 (0.031) 1.0 (0.039) PACKAGE DIMENSIONS in millimeters (inches) SOT-323 0.46 (0.018) 0.26 (0.010) 0.525 (0.021) ref. 0.4 (0.016) 0.2 (0.008) 2.45 (0.096) 1.35 (0.053) 0.65 (0.026) typ 1.15 (0.045) 2.15 (0.085) foot print recommendation: 0.6 (0.024) 1.4 (0.055) Document no.: 6.541-5040.02-4 Rev. 1 - Date: 06. April 2010 0.65 (0.026) 1.8 (0.071) 0.8 (0.031) 1.2 (0.047) 21113 1.3 (0.051) Rev. 1.2, 23-Feb-16 Document Number: 85894 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VCAN26A2-03G www.vishay.com Vishay Semiconductors ORIENTATION IN CARRIER TAPE SOT-323 Unreeling direction Top view Document no.: S8-V-3717.08-002 (4) Created - Date: 09. Feb. 2010 22761 CARRIER TAPE SOT-323 2 ± 0.05 4 ± 0.1 A 1.75 ± 0.1 A-A Section 0.254 ± 0.013 +0.1 2.4 +0.1 +0.3 8 -0.1 3.5 ± 0.05 +0.1 Ø 1.55 0.0 +0.25 Ø 1 0.00 B B A 1.19 ± 0.1 4 ± 0.1 B-B Section 2.4 ± 0.1 Document no.: S8-V-3717.08-002 (4) Created - Date: 09. Feb. 2010 22762 Rev. 1.2, 23-Feb-16 Document Number: 85894 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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