2N3027 2N3032.aspx?ext=

2N3027-2N3032
SILICON CONTROLLED RECTIFIER
High-reliability discrete products
and engineering services since 1977
FEATURES


Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Symbol
2N3027
2N3030
2N3028
2N3031
2N3029
2N3032
Repetitive peak off-state voltage
VDRM
30V
60V
100V
Repetitive peak reverse voltage
VRRM
30V
60V
100V
Characteristic
DC on-state current
100°C case
75°C ambient
IT
500mA
250mA
Repetitive peak on-state current
ITRM
30A
Surge (non-repetitive) on-state current
50ms
8ms
ITSM
5A
8A
Peak gate current
IGM
250mA
Average gate current
IG(AV)
25mA
Reverse gate voltage
VGR
5V
Reverse gate current
IGR
3mA
Storage temperature range
Tstg
-65°C to +200°C
Operating temperature range
TJ
-65°C to +150°C
Blocking voltage ratings apply over the operating temperature range, provided the gate is connected to the cathode through an appropriate resistor, or adequate gate bias is used.
ELECTRICAL CHARACTERISTIC (@ 25°C unless otherwise noted) (2N3027-2N3029)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Condition
Off state current
IDRM
-
0.002
0.100
µA
RGK = 1KΩ, V DRM = rating
Reverse current
IRRM
-
0.002
0.100
µA
RGK = 1KΩ, V RRM = rating
Reverse gate voltage
VGR
5
8
-
V
IGR = 0.1mA
25°C tests
Gate trigger current
IGT
-5
8
200
µA
RGS = 10KΩ, V D = 5V
Gate trigger voltage
VGT
0.400
0.550
0.800
V
RGS = 100Ω, V D = 5V
On-state voltage
VT
0.800
1.200
1.500
V
IT = 1A (pulse test)
Holding current
IH
0.300
0.700
5.000
mA
RGK = 1KΩ, V D = 5V
dv/dt
30
15
10
60
30
25
-
V/µs
RGK = 1KΩ, V D = 30V (2N3027)
RGK = 1KΩ, V D = 60V (2N3028)
RGK = 1KΩ, V D = 100V (2N3029)
tpg(on)
-
0.070
0.200
µs
IG = 10mA, IT = 1A, VD = 30V
td
-
0.080
-
µs
IG = 10mA, IT = 1A, VD = 30V
Rise time
tr
-
0.040
-
µs
IG = 10mA, IT = 1A, VD = 30V
Circuit commutated turn-off time
tg
-
0.700
2.000
µs
IT = 1A, IR = 1A, RGK = 1KΩ
Off-state voltage – critical rate of rise
Gate trigger-on pulse width
Delay time
Rev. 20150306
2N3027-2N3032
SILICON CONTROLLED RECTIFIER
High-reliability discrete products
and engineering services since 1977
Parameter
Symbol
Min.
Typ.
Max.
Unit
High temperature off-state current
IDRM
High temperature reverse current
IRRM
High temperature gate trigger voltage
Test Condition
-
2
20
µA
RGK = 1KΩ , VDRM = rating
-
20
50
µA
RGK = 1KΩ, V RRM = rating
VGT
0.100
0.150
0.600
V
RGS = 100Ω, V D = 5V
IH
0.050
0.200
1.000
mA
RGK = 1KΩ, V D = 5V
Low temperature gate trigger voltage
VGT
0.600
0.750
1.100
V
RGS = 100Ω, V D = 5V
Low temperature gate trigger current
IGT
0
150
1.200
mA
RGS = 10KΩ, V D = 5V
Low temperature holding current
IH
0.500
10
mA
RGK = 1KΩ, V D = 5V
150°C Tests
High temperature holding current
-65°C Tests
3.500
ELECTRICAL CHARACTERISTIC (@ 25°C unless otherwise noted) (2N3030-2N3032)
25°C tests
Off state current
IDRM
-
0.002
0.100
µA
RGK = 1KΩ, V DRM = rating
Reverse current
IRRM
-
0.002
0.100
µA
RGK = 1KΩ, V RRM = rating
Reverse gate voltage
VGR
5
8
Gate trigger current
IGT
-5
Gate trigger voltage
VGT
0.440
On-state voltage
VT
0.800
1.200
Holding current
IH
0.300
Off-state voltage – critical rate of rise
dv/dt
Gate trigger-on pulse width
-
V
IGR = 0.1mA
20
µA
RGS = 10KΩ, VD = 5V
0.600
V
RGS = 100Ω, VD = 5V
1.500
V
IT = 1A (pulse test)
1.000
4.000
mA
RGK = 1KΩ, V D = 5V
30
15
10
60
30
25
-
V/µs
RGK = 1KΩ, V D = 30V (2N3030)
RGK = 1KΩ, V D = 60V (2N3031)
RGK = 1KΩ, V D = 100V (2N3032)
tpg(on)
-
0.050
0.100
µs
IG = 10mA, IT = 1A, VD = 30V
Delay time
td
-
0.100
-
µs
IG = 10mA, IT = 1A, VD = 30V
Rise time
tr
-
0.050
-
µs
IG = 10mA, IT = 1A, VD = 30V
Circuit commutated turn-off time
tg
-
0.700
2.000
µs
IT = 1A, IR = 1A, RGK = 1K
High temperature off-state current
IDRM
-
2
20
µA
RGK = 1KΩ, V DRM = rating
High temperature reverse current
IRRM
-
20
50
µA
RGK = 1KΩ, V RRM = rating
High temperature gate trigger voltage
VGT
0.100
0.150
0.400
V
RGS = 100Ω, VD = 5V
IH
0.050
0.300
2.000
mA
Low temperature gate trigger voltage
VGT
0.440
0.800
0.950
V
RGS = 100Ω, V D = 5V
Low temperature gate trigger current
IGT
0
0.400
0.500
mA
RGS = 10KΩ, VD = 5V
Low temperature holding current
IH
0.500
5.000
8
mA
RGK = 1KΩ, V D = 5V
150°C Tests
High temperature holding current
RGK = 1K, VD = 5V
-65°C Tests
Rev. 20150306
High-reliability discrete products
and engineering services since 1977
2N3027-2N3032
SILICON CONTROLLED RECTIFIER
MECHANICAL CHARACTERISTICS
Case
TO-18
Marking
Alpha-numeric
Pin out
See below
TO-18
A
B
C
D
E
F
G
H
J
K
L
M
N
P
Inches
Min
Max
0.209
0.230
0.178
0.195
0.170
0.210
0.016
0.021
0.030
0.016
0.019
0.100 BSC
0.036
0.046
0.028
0.048
0.500
0.250
45°C BSC
0.050 BSC
0.050
Millimeters
Min
Max
5.310
5.840
4.520
4.950
4.320
5.330
0.406
0.533
0.762
0.406
0.483
2.540 BSC
0.914
1.170
0.711
1.220
12.700
6.350
45° BSC
1.270 BSC
1.270
Rev. 20150306
High-reliability discrete products
and engineering services since 1977
2N3027-2N3032
SILICON CONTROLLED RECTIFIER
Rev. 20150306
High-reliability discrete products
and engineering services since 1977
2N3027-2N3032
SILICON CONTROLLED RECTIFIER
Rev. 20150306
High-reliability discrete products
and engineering services since 1977
2N3027-2N3032
SILICON CONTROLLED RECTIFIER
Rev. 20150306
High-reliability discrete products
and engineering services since 1977
2N3027-2N3032
SILICON CONTROLLED RECTIFIER
Rev. 20150306
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