High-reliability discrete products and engineering services since 1977 MCR12LD, MCR12LM, MCR12LN SILICON CONTROLLED RECTIFIERS FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Rating Symbol Peak repetitive off-state voltage(1) (TJ = -40 to +125°C, sine wave, 50 to 60Hz, gate open) MCR12LD MCR12LM MCR12LN VDRM VRRM On-state RMS current (180° conduction angles, TC = 80°C) IT(RMS) Value Unit 400 600 800 V 12 A Peak non-repetitive surge current (half-cycle, sine wave, 60Hz, TJ = 125°C) ITSM Circuit fusing consideration (t = 8.3ms) I2t 41 A2s Forward peak gate power (pulse width ≤ 1.0µs, TC = 80°C) PGM 5.0 W Forward average gate power (t = 8.3ms, TC = 80°C) PG(AV) 0.5 W IGM 2.0 A Operating temperature range TJ -40 to +125 °C Storage temperature range Tstg -40 to +150 °C Symbol Value Unit Forward peak gate current (pulse width ≤ 1.0µs, TC = 80°C) Rating (1) Peak repetitive off-state voltage (TJ = -40 to +125°C, sine wave, 50 to 60Hz, gate open) MCR12LD MCR12LM MCR12LN VDRM VRRM On-state RMS current (180° conduction angles, TC = 80°C) IT(RMS) A 100 V 400 600 800 12 A Peak non-repetitive surge current (half-cycle, sine wave, 60Hz, TJ = 125°C) ITSM Circuit fusing consideration (t = 8.3ms) I2t 41 A2s Forward peak gate power (pulse width ≤ 1.0µs, TC = 80°C) PGM 5.0 W Forward average gate power (t = 8.3ms, TC = 80°C) PG(AV) 0.5 W A 100 Forward peak gate current (pulse width ≤ 1.0µs, TC = 80°C) IGM 2.0 A Operating temperature range TJ -40 to +125 °C Storage temperature range Tstg -40 to +150 °C THERMAL CHARACTERISTICS Symbol Maximum Unit Thermal resistance, junction to case Characteristic RӨJC 2.2 °C/W Thermal resistance, junction to ambient RӨJA 62.5 °C/W TL 260 °C Maximum lead temperature for soldering purposes 1/8” from case for 10s Rev. 20130108 High-reliability discrete products and engineering services since 1977 MCR12LD, MCR12LM, MCR12LN SILICON CONTROLLED RECTIFIERS ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Characteristic Symbol Min Typ Max - - 0.01 2.0 - - 2.2 2.0 4.0 8.0 4.0 10 20 6.0 12 30 0.5 0.65 0.8 100 250 - - - 50 Unit OFF CHARACTERISTICS Peak forward or reverse blocking current (VD = Rated VDRM or VRRM, gate open) TJ = 25°C TJ = 125°C IDRM, IRRM mA ON CHARACTERISTICS Peak on-state voltage* (ITM = 24A) VTM Gate trigger current (continuous dc) (VD = 12V, RL = 100Ω) IGT Holding current (VD = 12V, gate open, initiating current = 200mA) IH Latch current (VD = 12V, Ig = 20mA) IL Gate trigger voltage (continuous dc) (VD = 12V, RL = 100Ω) VGT V mA mA mA V DYNAMIC CHARACTERISTICS Critical rate of rise of off-state voltage (VD = rated VDRM, exponential waveform, gate open, TJ = 125°C) dv/dt Critical rate of rise of on-state current (IPK = 50A, Pw = 40µsec, diG/dt = 1A/µs, Igt = 50mA) di/dt V/µs A/µs * Pulse width≤ 1.0ms, duty cycle ≤ 2%. Rev. 20130108 High-reliability discrete products and engineering services since 1977 MCR12LD, MCR12LM, MCR12LN SILICON CONTROLLED RECTIFIERS MECHANICAL CHARACTERISTICS Case: TO-220AB Marking: Body painted, alpha-numeric Pin out: See below Rev. 20130108 High-reliability discrete products and engineering services since 1977 MCR12LD, MCR12LM, MCR12LN SILICON CONTROLLED RECTIFIERS Rev. 20130108 High-reliability discrete products and engineering services since 1977 MCR12LD, MCR12LM, MCR12LN SILICON CONTROLLED RECTIFIERS Rev. 20130108