4765A

SHD118513
SHD118513A
SHD118513B
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATASHEET 4765, REV. D
HERMETIC SCHOTTKY RECTIFIER
Very Low Forward Voltage Drop
Features:






Soft Reverse Recovery at Low and High Temperature
Very Low Forward Voltage Drop
Low Power Loss, High Efficiency
High Surge Capacity
Guard Ring for Enhanced Durability and Long Term Reliability
Guaranteed Reverse Avalanche Characteristics
Maximum Ratings
Characteristics
Peak Inverse Voltage
Max. Average Forward Current
Symbol
VRWM
IF(AV)
Max. Average Forward Current
IF(AV)
Max. Peak One Cycle NonRepetitive Surge Current
Non-Repetitive Avalanche Energy
IFSM
Repetitive Avalanche Current
IAR
Maximum Thermal Resistance
(per leg)
RJC
DC operation
Max. Junction Temperature
Max. Storage Temperature
TJ
Tstg
-
EAS
Condition
50% duty cycle, rectangular
wave form (Single)
50% duty cycle, rectangular
wave form (Common Cathode)
8.3 ms, half Sine wave
(per leg)
TJ = 25 C, IAS = 3.0 A,
L = 4.4 mH (per leg)
IAS decay linearly to 0 in 1 s
 limited by TJ max VA=1.5VR
Max.
60
60
Units
V
A
120
A
500
A
20
mJ
3.0
A
1.20
C/W
-65 to +175
-65 to +175
C
C
Max.
0.70
0.67
6
Units
V
V
mA
420
mA
2400
pF
Electrical Characteristics
Characteristics
Max. Forward Voltage Drop
(per leg)
Max. Reverse Current
Symbol
VF1
VF2
IR1
(per leg)
IR2
Max. Junction Capacitance
(per leg)
CT
Condition
@ 60A, Pulse, TJ = 25 C
@ 60A, Pulse, TJ = 125 C
@VR = 60V, Pulse,
TJ = 25 C
@VR = 60V, Pulse,
TJ = 125 C
@VR = 5V, TC = 25 C
fSIG = 1MHz,
VSIG = 50mV (p-p)
©2014 Sensitron Semiconductor  221 WEST INDUSTRY COURT  DEER PARK, NY 11729-4681
PHONE (631) 586-7600  FAX (631) 242-9798  www.sensitron.com  [email protected]
SHD118513
SHD118513A
SHD118513B
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATASHEET 4765, REV. D
MECHANICAL DIMENSIONS: In Inches / mm
.520±.020
SHD-5B
(13.2±.508)
.510±.020
SHD-5A
(12.9±.508)
.370±.010
(9.40±.254)
.370±.010
(9.40±.254)
.370±.010
(9.40±.254)
2
.125±.010
(3.17±.254)
.030±.010
(.762±.254)
.090±.010
(2.29±.254)
2
2
.610±.010
(15.5±.254)
.030±.010
(.762±.254)
.030±.010
(.762±.254)
3
.320±.010
(8.13±.254)
.610±.010
(15.5±.254)
.320±.010
(8.13 ±.254)
.610±.010
(15.5±.254)
3
3
.110 (2.80) Max
Alumina Ring
.110 (2.79) Max
Moly Lid
Terminal 1
.020±.005 R
(.508±.127 )
Copper Terminals
.130 (3.30) Max
Moly Lid
Alumina Ring
.020±.005 R
(.508±.127 )
Alumina Ring
.020±.002
(.508±.051)
Moly Base
Terminal 1
.060±.010
(1.52±.254)
.060±.010
(1.52±.254)
1
2
3
PINOUT TABLE
DEVICE TYPE
PIN 1
DUAL RECTIFIER, COMMON CATHODE (P)
COMMON CATHODE
Note: The Vf curves shown are for the SD200SA60 unpackaged die only.
Typical Forw ard Characteristics
PIN 3
ANODE
Typical Rev erse Characteristics
10
(mA)
R
Instantaneous Reverse Current - I
(A)
1
10
125 °C
2
10
125 °C
1
10
100 °C
75 °C
0
10
50 °C
-1
10
25 °C
-2
10
0
25 °C
0
10
10
20
30
40
Reverse Voltage - V R (V)
50
60
Typical Junction Capacitance
Junction Capacitance - C T (pF)
F
Instantaneous Forward Current - I
PIN 2
ANODE
3
2
10
-1
10
0.0
0.2
0.4
0.6
Forward Voltage Drop - V F (V)
0.8
2500
2300
2100
1900
1700
1500
1300
1100
900
700
500
0
.015±.002
(.381±.051)
Moly Base
Terminal 1
10
20
30
40
Reverse Voltage - V R (V)
50
60
©2014 Sensitron Semiconductor  221 WEST INDUSTRY COURT  DEER PARK, NY 11729-4681
PHONE (631) 586-7600  FAX (631) 242-9798  www.sensitron.com  [email protected]
SENSITRON
SEMICONDUCTOR
SHD118513
SHD118513A
SHD118513B
TECHNICAL DATA
DATASHEET 4765, REV. D
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fail-safe precautions or other arrangement .
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©2014 Sensitron Semiconductor  221 WEST INDUSTRY COURT  DEER PARK, NY 11729-4681
PHONE (631) 586-7600  FAX (631) 242-9798  www.sensitron.com  [email protected]
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