Transistors with built-in Resistor UN5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/ 521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z Silicon NPN epitaxial planer transistor Unit: mm For digital circuits 2.1±0.1 0.425 ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● 0.3 -0 0.65 1.3±0.1 0.65 (R2) 10kΩ 22kΩ 47kΩ 47kΩ — — — 5.1kΩ 10kΩ — 10kΩ 22kΩ 10kΩ 4.7kΩ 4.7kΩ 47kΩ 47kΩ 47kΩ 2.2kΩ 22kΩ +0.1 0.15 -0.05 0.2 0.9±0.1 Marking Symbol (R1) 8A 10kΩ 8B 22kΩ 8C 47kΩ 8D 10kΩ 8E 10kΩ 8F 4.7kΩ 8H 22kΩ 8I 0.51kΩ 8K 1kΩ 8L 47kΩ 8M 47kΩ 8N 47kΩ 8O 4.7kΩ 8P 10kΩ 8Q 4.7kΩ EL 2.2kΩ EX 4.7kΩ EZ 22kΩ FD 2.2kΩ FF 4.7kΩ ■ Absolute Maximum Ratings 3 0 to 0.1 ● UN5211 UN5212 UN5213 UN5214 UN5215 UN5216 UN5217 UN5218 UN5219 UN5210 UN521D UN521E UN521F UN521K UN521L UN521M UN521N UN521T UN521V UN521Z 1 2 ■ Resistance by Part Number ● 0.425 0.7±0.1 ● Costs can be reduced through downsizing of the equipment and reduction of the number of parts. S-Mini type package, allowing automatic insertion through tape packing and magazine packing. 2.0±0.2 ● 1.25±0.1 +0.1 ■ Features 1 : Base 2 : Emitter 3 : Collector 0.2±0.1 EIAJ : SC–70 S–Mini Type Package Internal Connection C R1 B R2 E (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 50 V Collector to emitter voltage VCEO 50 V Collector current IC 100 mA Total power dissipation PT 150 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 to +150 ˚C 1 UN5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/ Transistors with built-in Resistor 521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z ■ Electrical Characteristics (Ta=25˚C) Parameter Symbol Collector cutoff current Emitter cutoff current Conditions typ max Unit ICBO VCB = 50V, IE = 0 0.1 µA ICEO VCE = 50V, IB = 0 0.5 µA UN5211 0.5 UN5212/5214/521E/521D/521M/521N/521T 0.2 UN5213 0.1 UN5215/5216/5217/5210 0.01 IEBO UN521F/521K VEB = 6V, IC = 0 1.0 UN5219 1.5 UN5218/521L/521V 2.0 UN521Z 0.4 mA Collector to base voltage VCBO IC = 10µA, IE = 0 50 V Collector to emitter voltage VCEO IC = 2mA, IB = 0 50 V Forward current transfer ratio UN5211 35 UN5212/521E 60 UN5213/5214/521M 80 UN5215*/5216*/5217*/5210* 160 UN521F/521D/5219 hFE VCE = 10V, IC = 5mA 30 20 UN521N/521T 80 400 UN521V 6 20 UN521Z 60 VCE(sat) IC = 10mA, IB = 0.3mA VOH VCC = 5V, VB = 0.5V, RL = 1kΩ UN521V Output voltage high level UN5213/521K UN521D VOL UN521E Transition frequency 200 IC = 10mA, IB = 1.5mA Output voltage low level Input resistance 460 UN5218/521K/521L Collector to emitter saturation voltage fT V 0.25 V 4.9 V VCC = 5V, VB = 2.5V, RL = 1kΩ 0.2 0.2 VCC = 5V, VB = 10V, RL = 1kΩ 0.2 VCC = 5V, VB = 6V, RL = 1kΩ 0.2 VCB = 10V, IE = –2mA, f = 200MHz 150 UN5211/5214/5215/521K 10 UN5212/5217/521T 22 UN5213/521D/521E/5210 47 UN5216/521F/521L/521N/521Z 0.25 VOC = 5V, VB = 3.5V, RL = 1kΩ R1 (–30%) UN5218 4.7 0.51 UN5219 1 UN521M/521V 2.2 * hFE rank classification (UN5125/5216/5217/5210) 2 min Rank Q R S hFE 160 to 260 210 to 340 290 to 460 V MHz (+30%) kΩ UN5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/ Transistors with built-in Resistor 521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z ■ Electrical Characteristics (continued) Parameter Symbol Conditions min typ max UN5211/5212/5213/521L 0.8 1.0 1.2 UN5214 0.17 0.21 0.25 UN5218/5219 0.08 0.1 0.12 UN521D Resistance ratio (Ta=25˚C) 4.7 UN521E UN521F/521T Unit 2.14 R1/R2 0.47 UN521K 2.13 UN521M 0.047 UN521N 0.1 UN521V 1.0 UN521Z 0.21 3 UN5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/ Transistors with built-in Resistor 521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z Common characteristics chart PT — Ta Total power dissipation PT (mW) 240 200 160 120 80 40 0 0 40 80 120 160 Ambient temperature Ta (˚C) Characteristics charts of UN5211 IC — VCE VCE(sat) — IC Collector current IC (mA) Ta=25˚C IB=1.0mA 0.9mA 0.8mA 140 0.7mA 0.6mA 0.5mA 120 100 0.4mA 0.3mA 80 60 0.2mA 40 20 0.1mA Collector to emitter saturation voltage VCE(sat) (V) 100 0 0 2 4 6 8 10 IC/IB=10 30 10 3 1 0.3 25˚C –25˚C 0.03 Collector to emitter voltage VCE (V) Ta=75˚C 200 25˚C –25˚C 100 3 10 30 1 100 3 2 30 100 300 1000 VIN — IO 100 VO=5V Ta=25˚C 3000 30 1000 10 Input voltage VIN (V) 3 10 Collector current IC (mA) IO — VIN Output current IO (µA) Collector output capacitance Cob (pF) 1 10000 4 300 100 30 10 VO=0.2V Ta=25˚C 3 1 0.3 0.1 1 3 0 0.1 0.3 1 3 10 Collector to base voltage 4 300 Collector current IC (mA) f=1MHz IE=0 Ta=25˚C 5 VCE=10V 0 0.3 Cob — VCB 6 Ta=75˚C 0.1 0.01 0.1 12 hFE — IC 400 Forward current transfer ratio hFE 160 30 VCB 100 (V) 1 0.4 0.03 0.6 0.8 1.0 Input voltage VIN 1.2 (V) 1.4 0.01 0.1 0.3 1 3 10 30 Output current IO (mA) 100 UN5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/ Transistors with built-in Resistor 521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z Characteristics charts of UN5212 IC — VCE VCE(sat) — IC 100 Collector current IC (mA) 140 IB=1.0mA 0.9mA 0.8mA 120 0.7mA 0.6mA 0.5mA 100 0.4mA 80 0.3mA 60 0.2mA 40 20 0.1mA 2 4 6 8 10 IC/IB=10 30 10 3 1 0.3 25˚C –25˚C 0.03 0.01 0.1 12 Collector to emitter voltage VCE (V) 1 3 10 Ta=75˚C 200 25˚C –25˚C 100 30 100 1 3 3 2 30 100 300 1000 VIN — IO 100 VO=5V Ta=25˚C 3000 30 1000 10 Input voltage VIN (V) 4 10 Collector current IC (mA) IO — VIN 10000 Output current IO (µA) Collector output capacitance Cob (pF) 300 Collector current IC (mA) f=1MHz IE=0 Ta=25˚C 5 VCE=10V 0 0.3 Cob — VCB 6 Ta=75˚C 0.1 0 0 hFE — IC 400 Forward current transfer ratio hFE Ta=25˚C Collector to emitter saturation voltage VCE(sat) (V) 160 300 100 30 10 VO=0.2V Ta=25˚C 3 1 0.3 0.1 1 0.03 3 0 0.1 0.3 1 3 10 Collector to base voltage 30 1 0.4 100 VCB (V) 0.6 0.8 1.0 1.2 0.01 0.1 1.4 0.3 1 3 10 30 100 Output current IO (mA) Input voltage VIN (V) Characteristics charts of UN5213 IC — VCE VCE(sat) — IC 100 Collector current IC (mA) IB=1.0mA 120 0.9mA 0.8mA 0.7mA 0.6mA 100 0.5mA 0.4mA 80 0.3mA 60 0.2mA 40 20 0.1mA 0 0 2 4 6 8 10 Collector to emitter voltage VCE (V) 12 hFE — IC IC/IB=10 30 10 3 1 0.3 Ta=75˚C 25˚C 0.1 0.03 0.01 0.1 400 –25˚C VCE=10V Forward current transfer ratio hFE Ta=25˚C 140 Collector to emitter saturation voltage VCE(sat) (V) 160 350 Ta=75˚C 300 25˚C 250 –25˚C 200 150 100 50 0 0.3 1 3 10 30 Collector current IC (mA) 100 1 3 10 30 100 300 1000 Collector current IC (mA) 5 UN5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/ Transistors with built-in Resistor 521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z Cob — VCB IO — VIN 10000 5 4 3 2 VIN — IO 100 VO=5V Ta=25˚C 3000 30 1000 10 Input voltage VIN (V) f=1MHz IE=0 Ta=25˚C Output current IO (µA) Collector output capacitance Cob (pF) 6 300 100 30 10 VO=0.2V Ta=25˚C 3 1 0.3 0.1 1 0.03 3 0 0.1 0.3 1 3 10 Collector to base voltage 30 1 0.4 100 VCB (V) 0.6 0.8 1.0 1.2 0.01 0.1 1.4 0.3 1 3 10 30 100 Output current IO (mA) Input voltage VIN (V) Characteristics charts of UN5214 IC — VCE VCE(sat) — IC 100 Collector current IC (mA) IB=1.0mA 0.9mA 0.8mA 0.7mA 0.6mA 120 100 0.5mA 80 0.4mA 60 0.3mA 40 0.2mA 20 0.1mA 0 2 4 6 8 10 12 IC/IB=10 30 10 3 1 0.3 Ta=75˚C 25˚C 0.1 0.03 0.01 0.1 0 –25˚C 1 3 10 10000 30 Ta=75˚C 200 25˚C 150 –25˚C 100 50 1 100 3 4 3 2 10 30 100 300 1000 Collector current IC (mA) VIN — IO 100 VO=5V Ta=25˚C 3000 30 1000 10 Input voltage VIN (V) Output current IO (µA) Collector output capacitance Cob (pF) 250 IO — VIN f=1MHz IE=0 Ta=25˚C 300 100 30 10 VO=0.2V Ta=25˚C 3 1 0.3 0.1 1 0.03 3 0 0.1 0.3 1 3 10 Collector to base voltage 6 300 0 0.3 Cob — VCB 5 VCE=10V 350 Collector current IC (mA) Collector to emitter voltage VCE (V) 6 hFE — IC 400 Forward current transfer ratio hFE Ta=25˚C 140 Collector to emitter saturation voltage VCE(sat) (V) 160 30 100 VCB (V) 1 0.4 0.6 0.8 1.0 1.2 Input voltage VIN (V) 1.4 0.01 0.1 0.3 1 3 10 30 Output current IO (mA) 100 UN5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/ Transistors with built-in Resistor 521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z Characteristics charts of UN5215 IC — VCE VCE(sat) — IC 100 120 0.7mA 0.6mA 0.5mA 100 0.4mA 80 0.3mA 60 0.2mA 40 0.1mA 20 2 4 6 8 10 IC/IB=10 30 10 3 1 0.3 Ta=75˚C 25˚C 0.1 0 0 12 0.03 –25˚C 0.01 0.1 0.3 1 3 10 Ta=75˚C 250 200 25˚C 150 –25˚C 100 50 30 1 100 3 4 3 2 30 100 300 1000 VIN — IO 100 VO=5V Ta=25˚C 3000 30 1000 10 Input voltage VIN (V) f=1MHz IE=0 Ta=25˚C 10 Collector current IC (mA) IO — VIN 10000 Output current IO (µA) Collector output capacitance Cob (pF) 300 0 Cob — VCB 5 VCE=10V 350 Collector current IC (mA) Collector to emitter voltage VCE (V) 6 hFE — IC 400 Forward current transfer ratio hFE 140 Collector current IC (mA) Ta=25˚C IB=1.0mA 0.9mA 0.8mA Collector to emitter saturation voltage VCE(sat) (V) 160 300 100 30 10 VO=0.2V Ta=25˚C 3 1 0.3 0.1 1 3 0 0.1 0.3 1 3 10 Collector to base voltage 30 1 0.4 100 VCB (V) 0.03 0.6 0.8 1.0 1.2 0.01 0.1 1.4 Input voltage VIN (V) 0.3 1 3 10 30 100 Output current IO (mA) Characteristics charts of UN5216 IC — VCE VCE(sat) — IC 100 140 Collector current IC (mA) IB=1.0mA 0.9mA 0.8mA 0.7mA 0.6mA 120 100 0.5mA 0.4mA 80 0.3mA 60 0.2mA 40 20 0.1mA 0 0 2 4 6 8 10 Collector to emitter voltage VCE (V) 12 30 10 3 1 0.3 Ta=75˚C 25˚C 0.1 0.03 0.01 0.1 400 IC/IB=10 VCE=10V Forward current transfer ratio hFE Ta=25˚C Collector to emitter saturation voltage VCE(sat) (V) 160 hFE — IC 350 Ta=75˚C 300 25˚C 250 –25˚C 200 150 100 50 –25˚C 0 0.3 1 3 10 30 Collector current IC (mA) 100 1 3 10 30 100 300 1000 Collector current IC (mA) 7 UN5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/ Transistors with built-in Resistor 521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z Cob — VCB 10000 5 4 3 2 VIN — IO 100 VO=5V Ta=25˚C 3000 30 1000 10 Input voltage VIN (V) f=1MHz IE=0 Ta=25˚C Output current IO (µA) Collector output capacitance Cob (pF) 6 IO — VIN 300 100 30 10 VO=0.2V Ta=25˚C 3 1 0.3 0.1 1 0.03 3 0 0.1 0.3 1 3 10 Collector to base voltage 30 1 0.4 100 0.6 0.8 1.0 1.2 0.01 0.1 1.4 0.3 1 3 10 30 100 Output current IO (mA) Input voltage VIN (V) VCB (V) Characteristics charts of UN5217 IC — VCE VCE(sat) — IC Collector current IC (mA) 100 80 0.4mA 0.3mA 0.2mA 60 40 20 0.1mA Collector to emitter saturation voltage VCE(sat) (V) 100 Ta=25˚C IB=1.0mA 0.9mA 0.8mA 0.7mA 0.6mA 0.5mA 0 0 2 4 6 8 10 30 10 3 1 Ta=75˚C 0.3 25˚C 0.1 0.03 0.01 0.1 12 Collector to emitter voltage VCE (V) 250 200 Ta=75˚C 150 25˚C –25˚C 100 50 1 3 10 30 1 100 3 2 30 100 300 1000 VIN — IO 100 VO=5V Ta=25˚C 3000 30 1000 10 Input voltage VIN (V) 3 10 Collector current IC (mA) IO — VIN Output current IO (µA) Collector output capacitance Cob (pF) 300 0 0.3 10000 4 300 100 30 10 VO=0.2V Ta=25˚C 3 1 0.3 0.1 1 0.03 3 0 0.1 0.3 1 3 10 Collector to base voltage 8 350 Collector current IC (mA) f=1MHz IE=0 Ta=25˚C 5 VCE=10V –25˚C Cob — VCB 6 400 IC/IB=10 Forward current transfer ratio hFE 120 hFE — IC 30 100 VCB (V) 1 0.4 0.6 0.8 1.0 1.2 Input voltage VIN (V) 1.4 0.01 0.1 0.3 1 3 10 30 Output current IO (mA) 100 UN5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/ Transistors with built-in Resistor 521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z Characteristics charts of UN5218 IC — VCE VCE(sat) — IC 100 Collector current IC (mA) 200 IB=1.0mA 0.9mA 0.8mA 0.7mA 160 120 0.6mA 0.5mA 0.4mA 80 0.3mA 40 0.2mA 0.1mA 0 0 2 4 6 8 10 30 10 3 1 Ta=75˚C 0.3 25˚C 0.1 0.03 12 Ta=75˚C 80 25˚C –25˚C 40 3 10 30 100 1 Collector current IC (mA) 3 4 3 2 30 100 300 1000 VIN — IO 100 VO=5V Ta=25˚C 3000 30 1000 10 Input voltage VIN (V) f=1MHz IE=0 Ta=25˚C 10 Collector current IC (mA) IO — VIN 10000 Output current IO (µA) Collector output capacitance Cob (pF) 120 0 1 0.3 Cob — VCB 5 VCE=10V –25˚C 0.01 0.1 Collector to emitter voltage VCE (V) 6 160 IC/IB=10 Forward current transfer ratio hFE Ta=25˚C Collector to emitter saturation voltage VCE(sat) (V) 240 hFE — IC 300 100 30 10 VO=0.2V Ta=25˚C 3 1 0.3 0.1 1 3 0 0.1 0.3 1 3 10 Collector to base voltage 30 1 0.4 100 VCB (V) 0.03 0.6 0.8 1.0 1.2 0.01 0.1 1.4 Input voltage VIN (V) 0.3 1 3 10 30 100 Output current IO (mA) Characteristics charts of UN5219 IC — VCE VCE(sat) — IC 100 Collector current IC (mA) 200 IB=1.0mA 0.9mA 0.8mA 0.7mA 0.6mA 160 120 0.5mA 0.4mA 80 0.3mA 40 0.2mA 0.1mA 0 0 2 4 6 8 10 Collector to emitter voltage VCE (V) 12 hFE — IC 160 IC/IB=10 30 VCE=10V Forward current transfer ratio hFE Ta=25˚C Collector to emitter saturation voltage VCE(sat) (V) 240 10 3 1 Ta=75˚C 0.3 25˚C 0.1 0.03 120 Ta=75˚C 80 25˚C –25˚C 40 –25˚C 0.01 0.1 0.3 1 3 10 Collector current IC 30 (mA) 100 0 1 3 10 30 100 300 1000 Collector current IC (mA) 9 UN5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/ Transistors with built-in Resistor 521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z Cob — VCB 4 3 2 100 VO=5V Ta=25˚C 3000 30 1000 10 Input voltage VIN (V) 5 VIN — IO 10000 f=1MHz IE=0 Ta=25˚C Output current IO (µA) Collector output capacitance Cob (pF) 6 IO — VIN 300 100 30 10 VO=0.2V Ta=25˚C 3 1 0.3 0.1 1 3 0 0.1 0.3 1 3 10 Collector to base voltage 30 1 0.4 100 0.03 0.6 0.8 1.0 1.2 0.01 0.1 1.4 Input voltage VIN (V) VCB (V) 0.3 1 3 10 30 100 Output current IO (mA) Characteristics charts of UN5210 IC — VCE VCE(sat) — IC 100 Ta=25˚C Collector current IC (mA) 50 40 30 0.4mA 0.5mA 0.6mA 0.7mA 0.3mA 0.1mA 20 10 0 0 2 4 6 8 10 12 10 3 1 Ta=75˚C 0.3 25˚C 0.1 0.03 –25˚C 0.01 0.1 0.3 1 3 10 Ta=75˚C 250 25˚C 200 –25˚C 150 100 50 30 100 1 3 3 2 30 100 300 1000 VIN — IO 100 VO=5V Ta=25˚C 3000 30 1000 10 Input voltage VIN (V) 4 10 Collector current IC (mA) IO — VIN 10000 Output current IO (µA) Collector output capacitance Cob (pF) 300 Collector current IC (mA) f=1MHz IE=0 Ta=25˚C 300 100 30 10 VO=0.2V Ta=25˚C 3 1 0.3 0.1 1 3 0 0.1 0.3 1 3 10 Collector to base voltage 10 VCE=10V 350 0 Cob — VCB 5 400 IC/IB=10 30 Collector to emitter voltage VCE (V) 6 hFE — IC Forward current transfer ratio hFE IB=1.0mA 0.9mA 0.8mA Collector to emitter saturation voltage VCE(sat) (V) 60 30 100 VCB (V) 1 0.4 0.03 0.6 0.8 1.0 1.2 Input voltage VIN (V) 1.4 0.01 0.1 0.3 1 3 10 30 Output current IO (mA) 100 UN5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/ Transistors with built-in Resistor 521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z Characteristics charts of UN521D IC — VCE VCE(sat) — IC Collector current IC (mA) 25 IB=1.0mA 20 15 0.2mA 0.1mA 10 5 Collector to emitter saturation voltage VCE(sat) (V) 100 Ta=25˚C 0.9mA 0.8mA 0.5mA 0.7mA 0.4mA 0.6mA 0.3mA 30 10 3 1 0.3 0 2 4 6 8 10 –25˚C 0.03 0.01 0.1 12 Collector to emitter voltage VCE (V) 25˚C –25˚C 80 40 10 30 100 1 3 2 30 100 300 1000 VIN — IO 100 VO=5V Ta=25˚C 3000 30 1000 10 Input voltage VIN (V) 3 10 Collector current IC (mA) IO — VIN Output current IO (µA) Collector output capacitance Cob (pF) 3 10000 4 Ta=75˚C 120 Collector current IC (mA) f=1MHz IE=0 Ta=25˚C 5 VCE=10V 0 1 0.3 Cob — VCB 6 Ta=75˚C 25˚C 0.1 0 160 IC/IB=10 Forward current transfer ratio hFE 30 hFE — IC 300 100 30 10 VO=0.2V Ta=25˚C 3 1 0.3 0.1 1 0.03 3 0 0.1 0.3 1 3 10 Collector to base voltage 30 1 1.5 100 VCB (V) 2.0 2.5 3.0 3.5 0.01 0.1 4.0 0.3 1 3 10 30 100 Output current IO (mA) Input voltage VIN (V) Characteristics charts of UN521E IC — VCE VCE(sat) — IC Collector current IC (mA) 50 40 0.3mA 0.4mA 0.5mA 30 0.2mA 0.1mA 20 10 0 0 2 4 6 8 10 Collector to emitter voltage VCE (V) 12 hFE — IC IC/IB=10 30 10 3 1 Ta=75˚C 0.3 25˚C 0.1 0.03 0.01 0.1 160 VCE=10V Forward current transfer ratio hFE IB=1.0mA 0.7mA Ta=25˚C 0.9mA 0.6mA 0.8mA 100 Collector to emitter saturation voltage VCE(sat) (V) 60 Ta=75˚C 120 25˚C –25˚C 80 40 –25˚C 0 0.3 1 3 10 Collector current IC 30 (mA) 100 1 3 10 30 100 300 1000 Collector current IC (mA) 11 UN5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/ Transistors with built-in Resistor 521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z Cob — VCB IO — VIN 10000 5 4 3 2 VIN — IO 100 VO=5V Ta=25˚C 3000 30 1000 10 Input voltage VIN (V) f=1MHz IE=0 Ta=25˚C Output current IO (µA) Collector output capacitance Cob (pF) 6 300 100 30 10 VO=0.2V Ta=25˚C 3 1 0.3 0.1 1 0.03 3 0 0.1 0.3 1 3 10 Collector to base voltage 30 1 1.5 100 VCB (V) 2.0 2.5 3.0 3.5 0.01 0.1 4.0 0.3 1 3 10 30 100 Output current IO (mA) Input voltage VIN (V) Characteristics charts of UN521F IC — VCE VCE(sat) — IC Ta=25˚C Collector current IC (mA) 200 0.9mA 0.8mA 0.7mA 0.6mA 160 120 IB=1.0mA 0.5mA 80 0.4mA 0.3mA 40 0.2mA 0.1mA Collector to emitter saturation voltage VCE(sat) (V) 100 0 0 2 4 6 8 10 IC/IB=10 30 10 3 Ta=75˚C 1 0.3 25˚C 0.1 0.03 0.01 0.1 12 Collector to emitter voltage VCE (V) 25˚C –25˚C 40 1 3 10 30 1 100 3 2 30 100 300 1000 VIN — IO 100 VO=5V Ta=25˚C 3000 30 1000 10 Input voltage VIN (V) 3 10 Collector current IC (mA) IO — VIN Output current IO (µA) Collector output capacitance Cob (pF) Ta=75˚C 80 0 0.3 10000 4 300 100 30 10 VO=0.2V Ta=25˚C 3 1 0.3 0.1 1 0.03 3 0 0.1 0.3 1 3 10 Collector to base voltage 12 120 Collector current IC (mA) f=1MHz IE=0 Ta=25˚C 5 VCE=10V –25˚C Cob — VCB 6 hFE — IC 160 Forward current transfer ratio hFE 240 30 100 VCB (V) 1 0.4 0.6 0.8 1.0 1.2 Input voltage VIN (V) 1.4 0.01 0.1 0.3 1 3 10 30 Output current IO (mA) 100 UN5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/ Transistors with built-in Resistor 521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z Characteristics charts of UN521K IC — VCE VCE(sat) — IC 240 Collector current IC (mA) 200 160 IB=1.2mA 120 1.0mA 0.8mA 80 0.6mA 0.4mA 40 0.2mA 0 0 2 4 6 8 10 IC/IB=10 10 1 25˚C –25˚C 200 160 Ta=75˚C 120 25˚C 80 –25˚C 40 0 1 3 10 30 100 300 1000 1 Collector current IC (mA) 3 10 30 100 300 1000 Collector current IC (mA) VIN — IO 100 f=1MHz IE=0 Ta=25˚C 4 3 2 VO=0.2V Ta=25˚C 30 Input voltage VIN (V) Collector output capacitance Cob (pF) VCE=10V 0.01 12 Cob — VCB 5 Ta=75˚C 0.1 Collector to emitter voltage VCE (V) 6 hFE — IC 240 Forward current transfer ratio hFE Ta=25˚C Collector to emitter saturation voltage VCE(sat) (V) 100 10 3 1 0.3 0.1 1 0.03 0 3 1 10 30 Collector to base voltage 0.01 0.1 100 VCB (V) 0.3 1 3 10 30 100 Output current IO (mA) Characteristics charts of UN521L IC — VCE VCE(sat) — IC 240 Collector current IC (mA) 200 160 IB=1.0mA 0.8mA 120 0.6mA 80 0.4mA 40 0.2mA 0 hFE — IC IC/IB=10 10 1 Ta=75˚C 25˚C 0.1 –25˚C 0.01 0 2 4 6 8 10 Collector to emitter voltage VCE (V) 12 240 VCE=10V Forward current transfer ratio hFE Ta=25˚C Collector to emitter saturation voltage VCE(sat) (V) 100 200 Ta=75˚C 160 25˚C 120 –25˚C 80 40 0 1 3 10 30 100 300 Collector current IC (mA) 1000 1 3 10 30 100 300 1000 Collector current IC (mA) 13 UN5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/ Transistors with built-in Resistor 521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z Cob — VCB IO — VIN 100 VO=0.2V Ta=25˚C f=1MHz IE=0 Ta=25˚C 5 10 Input voltage VIN (V) Collector output capacitance Cob (pF) 6 4 3 2 1 0.1 1 0.01 0.1 0 3 1 10 30 100 1 0.3 3 10 30 100 Output current IO (mA) VCB (V) Collector to base voltage Characteristics charts of UN521M IC — VCE VCE(sat) — IC 10 Collector current IC (mA) 200 IB=1.0mA 0.9mA 0.8mA 0.7mA 160 0.6mA 0.5mA 0.4mA 0.3mA 120 0.2mA 80 0.1mA 40 IC/IB=10 3 1 0.3 Ta=75˚C 25˚C 0.1 0.03 0 –25˚C 0.01 0.003 2 4 6 8 10 400 300 Ta=75˚C 25˚C 200 –25˚C 100 0 1 12 3 10 30 100 300 1 1000 Cob — VCB 3 IO — VIN 104 5 30 100 300 1000 VIN — IO 100 VO=5V Ta=25˚C f=1MHz IE=0 Ta=25˚C 10 Collector current IC (mA) Collector current IC (mA) Collector to emitter voltage VCE (V) VO=0.2V Ta=25˚C 30 4 3 2 103 Input voltage VIN (V) Output current IO (µA) Collector output capacitance Cob (pF) VCE=10V 0.001 0 102 101 10 3 1 0.3 0.1 1 0.03 0 0.1 0.3 1 3 10 Collector to base voltage 14 hFE — IC 500 Forward current transfer ratio hFE Ta=25˚C Collector to emitter saturation voltage VCE(sat) (V) 240 30 100 VCB (V) 1 0.4 0.6 0.8 1.0 1.2 Input voltage VIN (V) 1.4 0.01 0.1 0.3 1 3 10 30 Output current IO (mA) 100 UN5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/ Transistors with built-in Resistor 521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z Characteristics charts of UN521N IC — VCE VCE(sat) — IC 10 IB=1.0mA 0.9mA 0.8mA 0.7mA 0.6mA 0.5mA 0.4mA 120 100 80 0.3mA 60 0.2mA 40 0.1mA 20 1 Ta=75˚C 0.1 25˚C –25˚C 0.01 0 0 2 4 6 8 10 100 1000 Collector current IC (mA) Cob — VCB IO — VIN 10000 f=1MHz IE=0 Ta=25˚C Output current IO (µA) 5 4 3 2 400 Ta=75˚C 320 25˚C 240 –25˚C 160 80 0 10 1 12 Collector to emitter voltage VCE (V) 6 Collector output capacitance Cob (pF) VCE=10V 10 1 100 1000 Collector current IC (mA) VIN — IO 100 VO=5V Ta=25˚C 1000 Input voltage VIN (V) Collector current IC (mA) 140 480 IC/IB=10 Forward current transfer ratio hFE Ta=25˚C Collector to emitter saturation voltage VCE(sat) (V) 160 hFE — IC 100 10 VO=0.2V Ta=25˚C 10 1 0.1 1 0 10 1 1 0.4 100 Collector to base voltage VCB (V) 0.6 0.8 1 1.2 0.01 0.1 1.4 Input voltage VIN (V) 1 10 100 Output current IO (mA) Characteristics charts of UN521T IC — VCE VCE(sat) — IC 160 IB=1.0mA 0.9mA 0.8mA 0.7mA 0.6mA 0.5mA 120 100 0.4mA 80 0.3mA 60 0.2mA 40 0.1mA 20 0 1 Ta=75˚C 0.1 25˚C –25˚C 2 4 6 8 10 Collector to emitter voltage VCE (V) 12 VCE=10V 400 Ta=75˚C 320 25˚C 240 –25˚C 160 80 0 0.01 0 480 IC/IB=10 Forward current transfer ratio hFE Collector current IC (mA) 140 Collector to emitter saturation voltage VCE(sat) (V) 10 Ta=25˚C hFE — IC 1 10 100 Collector current IC (mA) 1000 1 10 100 1000 Collector current IC (mA) 15 UN5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/ Transistors with built-in Resistor 521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z Cob — VCB IO — VIN 10000 5 4 3 2 VIN — IO 100 VO=5V Ta=25˚C 1000 Input voltage VIN (V) f=1MHz IE=0 Ta=25˚C Output current IO (µA) Collector output capacitance Cob (pF) 6 100 10 VO=0.2V Ta=25˚C 10 1 0.1 1 0 10 1 1 0.4 100 Collector to base voltage VCB (V) 0.6 0.8 1 1.2 0.01 0.1 1.4 1 10 100 Output current IO (mA) Input voltage VIN (V) Characteristics charts of UN521V IC — VCE VCE(sat) — IC 10 Collector current IC (mA) 140 120 IB=1.0mA 100 0.9mA 0.8mA 0.7mA 80 0.6mA 60 0.5mA 40 0.4mA 20 0.3mA 0.2mA 0 0 2 4 6 8 10 IC/IB=10 1 Ta=75˚C 0.1 25˚C –25˚C 10 1 100 10000 25˚C 80 –25˚C 40 1 1000 4 3 2 10 100 1000 Collector current IC (mA) VIN — IO 100 VO=5V Ta=25˚C 1000 Input voltage VIN (V) f=1MHz IE=0 Ta=25˚C Output current IO (µA) Collector output capacitance Cob (pF) Ta=75˚C 120 IO — VIN 100 10 VO=0.2V Ta=25˚C 10 1 0.1 1 0 1 10 Collector to base voltage 16 160 Collector current IC (mA) Cob — VCB 5 200 0 0.01 12 Collector to emitter voltage VCE (V) 6 VCE=10V Forward current transfer ratio hFE Ta=25˚C Collector to emitter saturation voltage VCE(sat) (V) 160 hFE — IC 240 100 VCB (V) 1 0.4 0.6 0.8 1 1.2 Input voltage VIN (V) 1.4 0.01 0.1 1 10 Output current IO (mA) 100 UN5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/ Transistors with built-in Resistor 521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z Characteristics charts of UN521Z IC — VCE VCE(sat) — IC 10 Collector current IC (mA) 140 IB=1.0mA 0.9mA 0.8mA 0.7mA 0.6mA 0.5mA 120 100 0.4mA 80 0.3mA 60 0.2mA 40 0.1mA 20 IC/IB=10 1 Ta=75˚C 0.1 VCE=10V 25˚C –25˚C 0 2 4 6 8 10 10 1 12 Cob — VCB 100 Ta=75˚C 240 25˚C –25˚C 160 80 1 1000 3 2 100 1000 VIN — IO 100 VO=5V Ta=25˚C 1000 Input voltage VIN (V) Output current IO (µA) 4 10 Collector current IC (mA) IO — VIN 10000 f=1MHz IE=0 Ta=25˚C 5 320 Collector current IC (mA) Collector to emitter voltage VCE (V) 6 400 0 0.01 0 Collector output capacitance Cob (pF) hFE — IC 480 Forward current transfer ratio hFE Ta=25˚C Collector to emitter saturation voltage VCE(sat) (V) 160 100 10 VO=0.2V Ta=25˚C 10 1 0.1 1 0 –1 –10 –100 Collector to base voltage VCB (V) 1 0.4 0.6 0.8 1 1.2 Input voltage VIN (V) 1.4 0.01 0.1 1 10 100 Output current IO (mA) 17