BD746, BD746A, BD746B, BD746C

BD746, BD746A, BD746B, BD746C
PNP SILICON POWER TRANSISTORS
●
Designed for Complementary Use with the
BD745 Series
●
115 W at 25°C Case Temperature
●
20 A Continuous Collector Current
●
25 A Peak Collector Current
●
Customer-Specified Selections Available
SOT-93 PACKAGE
(TOP VIEW)
B
1
C
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRAAA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
Collector-base voltage (IE = 0)
Collector-emitter voltage (IB = 0)
E
T
E
L
O
S
B
O
BD746B
V CBO
-110
-45
BD746B
VCEO
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
V
-90
BD746
BD746C
Emitter-base voltage
-70
BD746C
BD746A
UNIT
-50
BD746
BD746A
VALUE
-60
V
-80
-100
VEBO
-5
V
IC
-20
A
ICM
-25
A
IB
-7
A
Ptot
115
W
Ptot
3.5
W
½LIC2
90
mJ
Operating free air temperature range
TA
-65 to +150
°C
Operating junction temperature range
Tj
-65 to +150
°C
Tstg
-65 to +150
°C
TL
260
°C
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
NOTES: 1.
2.
3.
4.
This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%.
Derate linearly to 150°C case temperature at the rate of 0.92 W/°C.
Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.
This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -0.4 A, RBE = 100 Ω,
VBE(off) = 0, RS = 0.1 Ω, VCC = -20 V.
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1
BD746, BD746A, BD746B, BD746C
PNP SILICON POWER TRANSISTORS
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
V(BR)CEO
ICBO
ICEO
IEBO
hFE
VCE(sat)
VBE
hfe
|hfe |
Collector-emitter
TEST CONDITIONS
MIN
-45
BD746A
-60
BD746B
-80
BD746C
-100
TYP
MAX
IC = -30 mA
IB = 0
VCE = -50 V
VBE = 0
BD746
-0.1
VCE = -70 V
VBE = 0
BD746A
-0.1
VCE = -90 V
VBE = 0
BD746B
-0.1
Collector cut-off
VCE = -110 V
VBE = 0
BD746C
-0.1
current
VCE = -50 V
VBE = 0
TC = 125°C
BD746
-5
VCE = -70 V
VBE = 0
TC = 125°C
BD746A
-5
VCE = -90 V
VBE = 0
TC = 125°C
BD746B
-5
VCE = -110 V
VBE = 0
TC = 125°C
BD746C
Collector cut-off
VCE = -30 V
IB = 0
BD746/746A
-0.1
current
VCE = -60 V
IB = 0
BD746B/746C
-0.1
VEB =
-5 V
IC = 0
VCE =
-4 V
IC = -1 A
breakdown voltage
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
voltage
Small signal forward
current transfer ratio
Small signal forward
current transfer ratio
(see Note 5)
BD746
-4 V
IC = -5 A
VCE =
-4 V
IC = -20 A
V
mA
-5
-0.5
mA
mA
40
E
T
E
L
O
S
B
O
VCE =
UNIT
(see Notes 5 and 6)
20
150
5
IB =
-0.5 A
IC = -5 A
IB =
-5 A
IC = -20 A
VCE =
-4 V
IC = -5 A
VCE =
-4 V
IC = -20 A
VCE = -10 V
IC = -1 A
f = 1 kHz
25
VCE = -10 V
IC = -1 A
f = 1 MHz
5
-1
(see Notes 5 and 6)
-3
-1
(see Notes 5 and 6)
-3
V
V
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
MAX
UNIT
RθJC
Junction to case thermal resistance
PARAMETER
MIN
TYP
1.1
°C/W
RθJA
Junction to free air thermal resistance
35.7
°C/W
MAX
UNIT
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
†
TEST CONDITIONS
†
MIN
td
Delay time
20
ns
tr
Rise time
IC = -5 A
IB(on) = -0.5 A
IB(off) = 0.5 A
120
ns
ts
Storage time
VBE(off) = 4.2 V
RL = 6 Ω
tp = 20 µs, dc ≤ 2%
600
ns
tf
Fall time
300
ns
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
2
TYP
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
BD746, BD746A, BD746B, BD746C
PNP SILICON POWER TRANSISTORS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
VCE(sat) - Collector-Emitter Saturation Voltage - V
TCS636AE
1000
hFE - DC Current Gain
TC = 125°C
TC = 25°C
TC = -55°C
100
-1·0
IC
= 10
IB
tp = 300µs, duty cycle < 2%
-1·0
-0·1
E
T
E
L
O
S
B
O
VCE = -4 V
tp = 300 µs, duty cycle < 2%
10
-0·1
TCS636AF
-10
-10
-100
-0·01
-0·1
-1·0
IC - Collector Current - A
TC = -55°C
TC = 25°C
TC = 125°C
-10
-100
IC - Collector Current - A
Figure 1.
Figure 2.
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
IC - Collector Current - A
-100
SAS635AC
tp = 1 ms,
d = 0.1 = 10%
tp = 10 ms,
d = 0.1 = 10%
tp = 50 ms,
d = 0.1 = 10%
DC Operation
-10
-1·0
-0·1
BD746
BD746A
BD746B
BD746C
-0·01
-1·0
-10
-100
-1000
VCE - Collector-Emitter Voltage - V
Figure 3.
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
3
BD746, BD746A, BD746B, BD746C
PNP SILICON POWER TRANSISTORS
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
TIS635AB
Ptot - Maximum Power Dissipation - W
120
100
80
60
40
E
T
E
L
O
S
B
O
20
0
0
25
50
75
100
125
150
TC - Case Temperature - °C
Figure 4.
4
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
Similar pages