BD246, BD246A, BD246B, BD246C

BD246, BD246A, BD246B, BD246C
PNP SILICON POWER TRANSISTORS
●
Designed for Complementary Use with the
BD245 Series
●
80 W at 25°C Case Temperature
●
10 A Continuous Collector Current
●
15 A Peak Collector Current
●
Customer-Specified Selections Available
SOT-93 PACKAGE
(TOP VIEW)
B
1
C
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRAAA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
Collector-emitter voltage (RBE = 100 Ω)
E
T
E
L
O
S
B
O
Collector-emitter voltage (IC = -30 mA)
BD246B
VCER
-115
-45
BD246B
V CEO
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
NOTES: 1.
2.
3.
4.
V
-90
BD246C
BD246C
Emitter-base voltage
-70
BD246
BD246A
UNIT
-55
BD246
BD246A
VALUE
-60
V
-80
-100
VEBO
-5
V
IC
-10
A
ICM
-15
A
IB
-3
A
Ptot
80
W
Ptot
3
W
½LIC2
62.5
mJ
°C
Tj
-65 to +150
Tstg
-65 to +150
°C
TL
250
°C
This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%.
Derate linearly to 150°C case temperature at the rate of 0.64 W/°C.
Derate linearly to 150°C free air temperature at the rate of 24 mW/°C.
This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -0.4 A, RBE = 100 Ω,
VBE(off) = 0, RS = 0.1 Ω, VCC = -20 V.
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1
BD246, BD246A, BD246B, BD246C
PNP SILICON POWER TRANSISTORS
electrical characteristics at 25°C case temperature
PARAMETER
V(BR)CEO
ICES
ICEO
IEBO
hFE
V CE(sat)
VBE
hfe
|hfe |
Collector-emitter
breakdown voltage
TEST CONDITIONS
IC = -30 mA
MIN
IB = 0
(see Note 5)
BD246
-45
BD246A
-60
BD246B
-80
BD246C
-100
TYP
MAX
V
VCE = -55 V
VBE = 0
BD246
-0.4
Collector-emitter
VCE = -70 V
VBE = 0
BD246A
-0.4
cut-off current
VCE = -90 V
VBE = 0
BD246B
-0.4
VCE = -115 V
VBE = 0
BD246C
-0.4
Collector cut-off
VCE = -30 V
IB = 0
BD246/246A
-0.7
current
VCE = -60 V
IB = 0
BD246B/246C
-0.7
VEB =
-5 V
IC = 0
Emitter cut-off
current
Forward current
transfer ratio
-1
VCE =
-4 V
IC =
-1 A
VCE =
-4 V
IC =
-3 A
VCE =
-4 V
IC = -10 A
Collector-emitter
IB =
-0.3 A
IC =
saturation voltage
IB =
-2.5 A
IC = -10 A
Base-emitter
voltage
Small signal forward
current transfer ratio
Small signal forward
current transfer ratio
UNIT
mA
mA
mA
40
(see Notes 5 and 6)
20
4
-3 A
-1
(see Notes 5 and 6)
-4
E
T
E
L
O
S
B
O
VCE =
-4 V
IC =
VCE =
-4 V
IC = -10 A
VCE = -10 V
IC = -0.5 A
f = 1 kHz
20
VCE = -10 V
IC = -0.5 A
f = 1 MHz
3
-3 A
-1.6
(see Notes 5 and 6)
-3
V
V
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER
RθJC
Junction to case thermal resistance
RθJA
Junction to free air thermal resistance
MIN
TYP
MAX
UNIT
1.56
°C/W
42
°C/W
MAX
UNIT
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
†
TEST CONDITIONS
†
MIN
ton
Turn-on time
IC = -1 A
IB(on) = -0.1 A
IB(off) = 0.1 A
0.2
µs
toff
Turn-off time
VBE(off) = 3.7 V
RL = 20 Ω
tp = 20 µs, dc ≤ 2%
0.8
µs
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
2
TYP
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
BD246, BD246A, BD246B, BD246C
PNP SILICON POWER TRANSISTORS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
TCS634AG
VCE = -4 V
TC = 25°C
tp = 300 µs, duty cycle < 2%
100
10
1
-0·1
TCS634AB
-10
VCE(sat) - Collector-Emitter Saturation Voltage - V
hFE - DC Current Gain
1000
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
IC =
IC =
IC =
IC =
-1·0
-0·1
E
T
E
L
O
S
B
O
-1·0
-10
-1 A
-3 A
-6 A
-10 A
-0·01
-0·01
IC - Collector Current - A
-0·1
-1·0
-10
IB - Base Current - A
Figure 1.
Figure 2.
BASE-EMITTER VOLTAGE
vs
COLLECTOR CURRENT
-1·6
TCS634AC
VBE - Base-Emitter Voltage - V
VCE = -4 V
TC = 25 °C
-1·4
-1·2
-1·0
-0·8
-0·6
-0·1
-1·0
-10
IC - Collector Current - A
Figure 3.
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
3
BD246, BD246A, BD246B, BD246C
PNP SILICON POWER TRANSISTORS
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
IC - Collector Current - A
-100
SAS634AC
tp = 300 µs, d = 0.1 = 10%
tp = 1 ms, d = 0.1 = 10%
tp = 10 ms, d = 0.1 = 10%
DC Operation
-10
-1·0
-0·1
BD246
BD246A
BD246B
BD246C
E
T
E
L
O
S
B
O
-0·01
-1·0
-10
-100
-1000
VCE - Collector-Emitter Voltage - V
Figure 4.
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
TIS633AA
Ptot - Maximum Power Dissipation - W
100
80
60
40
20
0
0
25
50
75
100
125
150
TC - Case Temperature - °C
Figure 5.
4
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
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