BDV65, BDV65A, BDV65B, BDV65C

BDV65, BDV65A, BDV65B, BDV65C
NPN SILICON POWER DARLINGTONS
●
Designed for Complementary Use with
BDV64, BDV64A, BDV64B and BDV64C
●
125 W at 25°C Case Temperature
●
12 A Continuous Collector Current
●
Minimum hFE of 1000 at 4 V, 5 A
SOT-93 PACKAGE
(TOP VIEW)
B
1
C
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRAAA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
Collector-base voltage (IE = 0)
Collector-emitter voltage (IB = 0)
E
T
E
L
O
S
B
O
BDV65B
V CBO
80
100
BDV65C
120
BDV65
60
BDV65A
BDV65B
UNIT
60
BDV65
BDV65A
VALUE
VCEO
BDV65C
80
100
V
V
120
VEBO
5
V
IC
12
A
ICM
15
A
IB
0.5
A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Ptot
125
W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Ptot
3.5
W
°C
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
Tj
-65 to +150
Tstg
-65 to +150
°C
TL
260
°C
NOTES: 1. This value applies for tp ≤ 0.1 ms, duty cycle ≤ 10%
2. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.
JUNE 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1
BDV65, BDV65A, BDV65B, BDV65C
NPN SILICON POWER DARLINGTONS
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
BDV65
V(BR)CEO
ICEO
ICBO
IEBO
hFE
VCE(sat)
VBE
VEC
Collector-emitter
MAX
BDV65A
80
BDV65B
100
BDV65C
120
IC = 30 mA
IB = 0
VCB = 30 V
IB = 0
BDV65
2
Collector-emitter
VCB = 40 V
IB = 0
BDV65A
2
cut-off current
VCB = 50 V
IB = 0
BDV65B
2
breakdown voltage
(see Note 4)
TYP
V
VCB = 60 V
IB = 0
BDV65C
VCB = 60 V
IE = 0
BDV65
0.4
VCB = 80 V
IE = 0
BDV65A
0.4
VCB = 100 V
IE = 0
BDV65B
0.4
Collector cut-off
VCB = 120 V
IE = 0
BDV65C
0.4
current
VCB = 30 V
IE = 0
TC = 150°C
BDV65
2
VCB = 40 V
IE = 0
TC = 150°C
BDV65A
2
VCB = 50 V
IE = 0
TC = 150°C
BDV65B
2
VCB = 60 V
IE = 0
TC = 150°C
BDV65C
2
VEB =
5V
IC = 0
VCE =
4V
IC = 5 A
(see Notes 4 and 5)
20 mA
IC = 5 A
4V
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
voltage
Parallel diode
forward voltage
VCE =
IE =
10 A
mA
2
mA
5
mA
(see Notes 4 and 5)
2
V
IC = 5 A
(see Notes 4 and 5)
2.5
V
IB = 0
(see Notes 4 and 5)
3.5
V
E
T
E
L
O
S
B
O
IB =
UNIT
60
1000
NOTES: 4. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER
RθJC
Junction to case thermal resistance
RθJA
Junction to free air thermal resistance
MIN
2
TYP
MAX
UNIT
1
°C/W
35.7
°C/W
JUNE 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
BDV65, BDV65A, BDV65B, BDV65C
NPN SILICON POWER DARLINGTONS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
VCE(sat) - Collector-Emitter Saturation Voltage - V
TCS140AD
70000
hFE - Typical DC Current Gain
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
TC = -40°C
TC = 25°C
TC = 100°C
10000
1000
1·0
tp = 300 µs, duty cycle < 2%
IB = I C / 100
1·5
1·0
0·5
E
T
E
L
O
S
B
O
VCE = 4 V
tp = 300 µs, duty cycle < 2%
100
0·5
TCS140AE
2·0
10
20
0
0·5
1·0
IC - Collector Current - A
TC = -40°C
TC = 25°C
TC = 100°C
10
20
IC - Collector Current - A
Figure 1.
Figure 2.
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
TCS140AF
VBE(sat) - Base-Emitter Saturation Voltage - V
3·0
TC = -40°C
TC = 25°C
2·5 TC = 100°C
2·0
1·5
1·0
0·5
IB = IC / 100
tp = 300 µs, duty cycle < 2%
0
0·5
1·0
10
20
IC - Collector Current - A
Figure 3.
JUNE 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
3
BDV65, BDV65A, BDV65B, BDV65C
NPN SILICON POWER DARLINGTONS
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
TIS140AA
Ptot - Maximum Power Dissipation - W
140
120
100
80
60
40
E
T
E
L
O
S
B
O
20
0
0
25
50
75
100
125
150
TC - Case Temperature - °C
Figure 4.
4
JUNE 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
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