BU426, BU426A

BU426, BU426A
NPN SILICON POWER TRANSISTORS
●
Rugged Triple-Diffused Planar Construction
●
900 Volt Blocking Capability
SOT-93 PACKAGE
(TOP VIEW)
B
1
C
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRAAA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
BU426
Collector-base voltage (IE = 0)
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Peak base current (see Note 1)
Continuous device dissipation at (or below) 50°C case temperature
Operating junction temperature range
Storage temperature range
NOTE
BU426A
V CBO
E
T
E
L
O
S
B
O
Collector-emitter voltage (VBE = 0)
Collector-emitter voltage (IB = 0)
SYMBOL
BU426
BU426A
BU426
BU426A
VCES
VCEO
VALUE
800
900
800
900
375
400
UNIT
V
V
V
IC
6
A
ICM
10
A
IB
+2, -0.1
A
IBM
±3
A
Ptot
70
W
Tj
-65 to +150
°C
Tstg
-65 to +150
°C
1: This value applies for tp ≤ 2 ms, duty cycle ≤ 2%.
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1
BU426, BU426A
NPN SILICON POWER TRANSISTORS
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
VCEO(sus)
ICES
IEBO
hFE
VCE(sat)
VBE(sat)
Collector-emitter
sustaining voltage
TEST CONDITIONS
IC = 100 mA
L = 25 mH
MIN
(see Note 2)
BU426
375
BU426A
400
TYP
MAX
V
VCE = 800 V
VBE = 0
BU426
1
Collector-emitter
VCE = 900 V
VBE = 0
BU426A
1
cut-off current
VCE = 800 V
VBE = 0
TC = 125°C
BU426
2
VCE = 900 V
VBE = 0
TC = 125°C
BU426A
2
VEB =
10 V
IC = 0
VCE =
5V
IC = 0.6 A
IC = 2.5 A
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
IB =
0.5 A
saturation voltage
IB =
1.25 A
Base-emitter
IB =
0.5 A
saturation voltage
IB =
1.25 A
IC =
10
4A
IC = 2.5 A
IC =
4A
(see Notes 3 and 4)
UNIT
30
mA
mA
60
1.5
(see Notes 3 and 4)
3
1.4
(see Notes 3 and 4)
1.6
V
V
NOTES: 2. Inductive loop switching measurement.
3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
E
T
E
L
O
S
B
O
PARAMETER
RθJC
MIN
TYP
Junction to case thermal resistance
MAX
UNIT
1.1
°C/W
resistive-load-switching characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
ton
Turn on time
ts
Storage time
tf
Fall time
tf
†
Fall time
TEST CONDITIONS
†
IC = 2.5 A
IB(on) = 0.5 A
VCC = 250 V
(see Figures 1 and 2)
IC = 2.5 A
IB(on) = 0.5 A
VCC = 250 V
TC = 95°C
MIN
IB(off) = -1 A
IB(off) = -1 A
MAX
0.3
0.6
µs
2
3.5
µs
0.15
0.2
UNIT
µs
0.75
µs
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
2
TYP
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
BU426, BU426A
NPN SILICON POWER TRANSISTORS
PARAMETER MEASUREMENT INFORMATION
+25 V
BD135
680 µF
120 Ω
T
V1
100 Ω
100 µF
47 Ω
tp
V cc = 250 V
TUT
15 Ω
V1
100 Ω
680 µF
82 Ω
BD136
tp = 20 µs
Duty cycle = 1%
V1 = 15 V, Source Impedance = 50 Ω
Figure 1. Resistive-Load Switching Test Circuit
E
T
E
L
O
S
B
O
C
90%
90%
E
IC
A - B = td
B - C = tr
E - F = tf
D - E = ts
A - C = ton
D - F = t off
B
10%
10%
90%
D
F
0%
dIB
≥ 2 A/µs
dt
IB
I B(on)
A
10%
0%
I B(off)
Figure 2. Resistive-Load Switching Waveforms
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
3
BU426, BU426A
NPN SILICON POWER TRANSISTORS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
VCE(sat) - Collector-Emitter Saturation Voltage - V
TCP741AF
100
hFE - Typical DC Current Gain
VCE = 1.5 V
VCE = 5 V
10
TCP741AG
7
TC = 25°C
6
IC =
IC =
IC =
IC =
5
4
2
1
0
1·0
10
0
0·5
IC - Collector Current - A
IC =
IC =
IC =
IC =
5
4
4
3
2
1
A
A
A
A
3
2
1
0
TCP741AI
1·2
VBE(sat) - Base-Emitter Saturation Voltage - V
VCE(sat) - Collector-Emitter Saturation Voltage - V
2·0
BASE-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
TCP741AH
TC = 100°C
6
1·5
Figure 4.
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
7
1·0
IB - Base Current - A
Figure 3.
TC = 25°C
1·1
1·0
0·9
0·8
IC =
IC =
IC =
IC =
0·7
4
3
2
1
A
A
A
A
0·6
0
0·5
1·0
IB - Base Current - A
Figure 5.
1·5
2·0
0
0·2
0·4
0·6
0·8
1·0
1·2
1·4
1·6
IB - Base Current - A
Figure 6.
4
A
A
A
A
3
E
T
E
L
O
S
B
O
1·0
0·1
4
3
2
1
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
BU426, BU426A
NPN SILICON POWER TRANSISTORS
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
IC - Collector Current - A
100
SAP741AA
10
1·0
0.1
tp =
0.2 µs
tp =
0.5 µs
tp =
1 µs
tp =
2 µs
6 µs
E
T
E
L
O
S
B
O
tp =
20 µs
tp =
DC Operation
0·01
1·0
BU426
BU426A
10
100
1000
VCE - Collector-Emitter Voltage - V
Figure 7.
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
5
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