INTERSIL FRE160R

FRE160D, FRE160R,
FRE160H
41A, 100V, 0.050 Ohm, Rad Hard,
N-Channel Power MOSFETs
June 1998
Features
Package
• 41A, 100V, RDS(on) = 0.050Ω
TO-258AA
• Second Generation Rad Hard MOSFET Results From New Design Concepts
• Gamma
• Gamma Dot
• Photo Current
• Neutron
-
Meets Pre-Rad Specifications to 100KRAD(Si)
Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)
Performance Permits Limited Use to 3000KRAD(Si)
Survives 3E9RAD(Si)/sec at 80% BVDSS Typically
Survives 2E12 Typically If Current Limited to IDM
10nA Per-RAD(Si)/sec Typically
Pre-RAD Specifications for 3E13 Neutrons/cm2
Usable to 3E14 Neutrons/cm2
Description
The Intersil has designed a series of SECOND GENERATION hardened power
MOSFETs of both N and P channel enhancement types with ratings from 100V to
500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is
offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness ranging from
1E13 for 500V product to 1E14 for 100V product. Dose rate hardness (GAMMA
DOT) exists for rates to 1E9 without current limiting and 2E12 with current limiting.
Symbol
This MOSFET is an enhancement-mode silicon-gate power field effect transistor of
the vertical DMOS (VDMOS) structure. It is specially designed and processed to
exhibit minimal characteristic changes to total dose (GAMMA) and neutron (no)
exposures. Design and processing efforts are also directed to enhance survival to
heavy ion (SEU) and/or dose rate (GAMMA DOT) exposure.
This part may be supplied as a die or in various packages other than shown above.
Reliability screening is available as either non TX (commercial), TX equivalent of
MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of
MIL-S-19500. Contact the Intersil High-Reliability Marketing group for any desired
deviations from the data sheet.
Absolute Maximum Ratings
(TC = +25oC) Unless Otherwise Specified
Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
Drain-Gate Voltage (RGS = 20kΩ). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current
TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
TC = +100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
Maximum Power Dissipation
TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
TC = +100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
Derated Above +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Inductive Current, Clamped, L = 100µH, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . . . . . ILM
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS
Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM
Operating And Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJC, TSTG
Lead Temperature (During Soldering)
Distance > 0.063 in. (1.6mm) From Case, 10s Max. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
4-37
FRE160D, R, H
100
100
UNITS
V
V
41
26
100
±20
A
A
A
V
150
60
1.20
100
41
100
-55 to +150
W
W
W/oC
A
A
A
oC
300
oC
File Number
3258.2
FRE160D, FRE160R, FRE160H
Pre-Radiation Electrical Specifications TC = +25oC, Unless Otherwise Specified
LIMITS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
Drain-Source Breakdown Volts
BVDSS
VGS = 0, ID = 1mA
100
-
V
Gate-Treshold Volts
VGS(th)
VDS = VGS, ID = 1mA
2.0
4.0
V
Gate-Body Leakage Forward
IGSSF
VGS = +20V
-
100
nA
Gate-Body Leakage Reverse
IGSSR
VGS = -20V
-
100
nA
Zero-Gate Voltage
Drain Current
IDSS1
IDSS2
IDSS3
VDS = 100V, VGS = 0
VDS = 80V, VGS = 0
VDS = 80V, VGS = 0,TC = +125oC
-
1
0.025
0.25
mA
Time = 20µs
-
100
A
Rated Avalanche Current
IAR
Drain-Source On-State Volts
VDS(on)
VGS = 10V, ID = 41A
-
2.15
V
Drain-Source On Resistance
RDS(on)
VGS = 10V, ID = 26A
-
0.050
Ω
VDD = 50V, ID = 41A
Pulse Width = 3µs
Period = 300µs Rg = 10Ω
0 ≤ VGS ≤ 10 (See Test Circuit)
-
100
-
700
-
400
tf
-
300
Gate-Charge Threshold
QG(th)
4
16
Gate-Charge On State
QG(on)s
94
376
182
728
3
16
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
ns
VDD = 50V, ID = 41A
IGS1 = IGS2
0 ≤ VGS ≤ 20
nc
Gate-Charge Total
QGM
Plateau Voltage
VGP
Gate-Charge Source
QGS
21
86
Gate-Charge Drain
QGD
52
210
Diode Forward Voltage
VSD
0.6
1.8
V
Reverse Recovery Time
TT
I = 41A; di/dt = 100A/µs
-
600
ns
V
nc
ID = 41A, VGD = 0
Junction-To-Case
Rθjc
-
-
0.83
Junction-To-Ambient
Rθja
Free Air Operation
-
48
oC/W
ELECTRONIC SWITCH OPENS
WHEN IAS IS REACHED
VDD
VDS
L
RL
+
CURRENT I
TRANSFORMER AS
VDS
-
VGS = 12V
VARY tP TO OBTAIN
REQUIRED PEAK IAS
DUT
0V
+
50Ω
VDD
VGS ≤ 20V
-
RGS
DUT
0V
FIGURE 1. RESISTIVE SWITCHING TEST CIRCUIT
tP
50V-150V
50Ω
FIGURE 2. UNCLAMPED ENERGY TEST CIRCUIT
4-38
FRE160D, FRE160R, FRE160H
Post-Radiation Electrical Specifications
TC = +25oC, Unless Otherwise Specified
LIMITS
PARAMETER
Drain-Source
Breakdown Volts
Gate-Source
Threshold Volts
Gate-Body
Leakage Forward
Gate-Body
Leakage Reverse
Zero-Gate Voltage
Drain Current
Drain-Source
On-State Volts
Drain-Source
On Resistance
SYMBOL
TYPE
TEST CONDITIONS
MIN
MAX
UNITS
(Note 4,6)
BVDSS
FRE160D, R
VGS = 0, ID = 1mA
100
-
V
(Note 5,6)
BVDSS
FRE160H
VGS = 0, ID = 1mA
95
-
V
(Note 4,6)
VGS(th)
FRE160D, R
VGS = VDS, ID = 1mA
2.0
4.0
V
(Note 3,5,6)
VGS(th)
FRE160H
VGS = VDS, ID = 1mA
1.5
4.5
V
(Note 4,6)
IGSSF
FRE160D, R
VGS = 20V, VDS = 0
-
100
nA
(Note 5,6)
IGSSF
FRE160H
VGS = 20V, VDS = 0
-
200
nA
(Note 2,4,6)
IGSSR
FRE160D, R
VGS = -20V, VDS = 0
-
100
nA
(Note 2,5,6)
IGSSR
FRE160H
VGS = -20V, VDS = 0
-
200
nA
(Note 4,6)
IDSS
FRE160D, R
VGS = 0, VDS = 80V
-
25
µA
(Note 5,6)
IDSS
FRE160H
VGS = 0, VDS = 80V
-
100
µA
(Note 1,4,6)
VDS(on)
FRE160D, R
VGS = 10V, ID = 41A
-
2.15
V
(Note 1,5,6)
VDS(on)
FRE160H
VGS = 16V, ID = 41A
-
3.23
V
(Note 1,4,6)
RDS(on)
FRE160D, R
VGS = 10V, ID = 26A
-
.050
Ω
(Note 1,5,6)
RDS(on)
FRE160H
VGS = 14V, ID = 26A
-
.075
Ω
NOTES:
1. Pulse test, 300µs max
2. Absolute value
3. Gamma = 300KRAD(Si)
4. Gamma = 10KRAD(Si) for “D”, 100KRAD(Si) for “R”. Neutron = 3E13
5. Gamma = 1000KRAD(Si). Neutron = 3E13
6. Insitu Gamma bias must be sampled for both VGS = +10V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS
7. Gamma data taken 6/11/89 on TA 17661 devices by GE ASTRO SPACE; EMC/SURVIVABILITY LABORATORY; KING OF PRUSSIA,
PA 19401
8. Single event drain burnout testing by Titus, J.L., et al of NWSC, Crane, IN at Brookhaven Nat. Lab. Dec 11-14, 1989
9. Neutron derivation, INTERSIL Application note AN-8831, Oct. 1988
4-39
FRE160D, FRE160R, FRE160H
Typical Performance Characteristics
4-40
FRE160D, FRE160R, FRE160H
Rad Hard Data Packages - Intersil Power Transistors
TXV Equivalent
E. Preconditioning Attributes Data Sheet
Hi-Rel Lot Traveler
HTRB - Hi Temp Gate Stress Post Reverse
Bias Data and Delta Data
HTRB - Hi Temp Drain Stress Post Reverse
Bias Delta Data
1. Rad Hard TXV Equivalent - Standard Data Package
A. Certificate of Compliance
B. Assembly Flow Chart
C. Preconditioning - Attributes Data Sheet
- Attributes Data Sheet
F. Group A
- Attributes Data Sheet
E. Group B
- Attributes Data Sheet
G. Group B
- Attributes Data Sheet
F. Group C
- Attributes Data Sheet
H. Group C
- Attributes Data Sheet
- Attributes Data Sheet
I. Group D
- Attributes Data Sheet
D. Group A
G. Group D
2. Rad Hard Max. “S” Equivalent - Optional Data Package
2. Rad Hard TXV Equivalent - Optional Data Package
A. Certificate of Compliance
A. Certificate of Compliance
B. Assembly Flow Chart
B. Serialization Records
C. Preconditioning - Attributes Data Sheet
- Precondition Lot Traveler
- Pre and Post Burn-In Read and Record
Data
C. Assembly Flow Chart
D. SEM Photos and Report
D. Group A
- Attributes Data Sheet
- Group A Lot Traveler
E. Group B
- Attributes Data Sheet
- Group B Lot Traveler
- Pre and Post Read and Record Data for
Intermittent Operating Life (Subgroup B3)
- Bond Strength Data (Subgroup B3)
- Pre and Post High Temperature Operating
Life Read and Record Data (Subgroup B6)
F. Group C
G. Group D
- Attributes Data Sheet
- Group C Lot Traveler
- Pre and Post Read and Record Data for
Intermittent Operating Life (Subgroup C6)
- Bond Strength Data (Subgroup C6)
- Attributes Data Sheet
- Group D Lot Traveler
- Pre and Post RAD Read and Record Data
E. Preconditioning - Attributes Data Sheet
- Hi-Rel Lot Traveler
- HTRB - Hi Temp Gate Stress Post
Reverse Bias Data and Delta Data
- HTRB - Hi Temp Drain Stress Post
Reverse Bias Delta Data
- X-Ray and X-Ray Report
F. Group A
- Attributes Data Sheet
- Hi-Rel Lot Traveler
- Subgroups A2, A3, A4, A5 and A7 Data
G. Group B
- Attributes Data Sheet
- Hi-Rel Lot Traveler
- Subgroups B1, B3, B4, B5 and B6 Data
H. Group C
- Attributes Data Sheet
- Hi-Rel Lot Traveler
- Subgroups C1, C2, C3 and C6 Data
I. Group D
Class S - Equivalents
1. Rad Hard “S” Equivalent - Standard Data Package
A. Certificate of Compliance
B. Serialization Records
C. Assembly Flow Chart
D. SEM Photos and Report
4-41
- Attributes Data Sheet
- Hi-Rel Lot Traveler
- Pre and Post Radiation Data
FRE160D, FRE160R, FRE160H
TO-258AA
3 LEAD JEDEC STYLE TO-258AA HERMETIC METAL PACKAGE
0.080 R MAX. (2 PLC'S)
INCHES
A
E
ØP
SYMBOL
A1
MIN
MAX
MILLIMETERS
MIN
MAX
NOTES
A
0.250
0.270
6.35
6.85
-
A1
0.035
0.045
0.89
1.14
-
Øb
0.035
0.045
0.89
1.14
2, 3
D
0.815
0.830
20.71
21.08
-
E
0.685
0.695
17.40
17.65
Q
H1
D
e
e1
H1
0.075 R
(4 PLC'S)
Øb
L
1
2
0.400 BSC
0.270
0.290
-
5.08 TYP
4
10.16 BSC
4
6.86
7.36
-
J1
0.130
0.150
3.31
3.81
4
L
0.600
0.650
15.24
16.51
-
ØP
0.155
0.165
3.94
4.19
-
Q
0.115
0.125
2.93
3.17
-
NOTES:
1. These dimensions are within allowable dimensions of Rev. A of
JEDEC TO-258AA outline dated 2-88. Except Øb.
2. Add typically 0.002 inches (0.05mm) for solder coating.
3. Lead dimension (without solder).
4. Position of lead to be measured 0.250 inches (6.35mm) from bottom of dimension D.
5. Die to base BeO isolated, terminals to case ceramic isolated.
6. Controlling dimension: Inch.
7. Revision 2 dated 5-98.
3
e
0.200 TYP
J1
e1
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
Sales Office Headquarters
NORTH AMERICA
Intersil Corporation
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: (407) 724-7000
FAX: (407) 724-7240
EUROPE
Intersil SA
Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
TEL: (32) 2.724.2111
FAX: (32) 2.724.22.05
4-42
ASIA
Intersil (Taiwan) Ltd.
Taiwan Limited
7F-6, No. 101 Fu Hsing North Road
Taipei, Taiwan
Republic of China
TEL: (886) 2 2716 9310
FAX: (886) 2 2715 3029