RECTRON HFM501 SEMICONDUCTOR THRU TECHNICAL SPECIFICATION HFM508 SURFACE MOUNT GLASS PASSIVATED HIGH EFFICIENCY SILICON RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 5.0 Amperes FEATURES * * * * * * Glass passivated device Ideal for surface mounted applications Low leakage current Metallurgically bonded construction Mounting position: Any Weight: 0.24 gram DO-214AB DATA MECHANICAL * Epoxy : Device has UL flammability classification 94V-0 0.125 (3.17) 0.115 (2.92) 0.245 (6.22) 0.220 (5.59) 0.280 (7.11) 0.260 (6.60) 0.012 (0.305) 0.006 (0.152) 0.103 (2.62) 0.079 (2.06) 0.060 (1.52) 0.030 (0.76) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 0.008 (0.203) 0.004 (0.102) o Ratings at 25 C ambient temperature unless otherwise specified. 0.320 (8.13) 0.305 (7.75) Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. Dimensions in inches and (millimeters) MAXIMUM RATINGS (At TA = 25oC unless otherwise noted) RATINGS SYMBOL HFM501 HFM502 HFM503 HFM504 HFM505 HFM506 HFM507 HFM508 UNITS Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 300 400 600 800 1000 Volts Maximum RMS Volts VRMS 35 70 140 210 280 420 560 700 Volts Maximum DC Blocking Voltage VDC 50 100 200 300 400 600 800 1000 Volts Maximum Average Forward Current at TA = 50oC Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Typical Junction Capacitance (Note 2) Operating and Storage Temperature Range IO 5.0 Amps IFSM 200 150 Amps CJ 70 50 pF TJ, TSTG 0 -65 to + 175 C ELECTRICAL CHARACTERISTICS (At TA = 25oC unless otherwise noted) CHARACTERISTICS Maximum Forward Voltage at 5.0A DC SYMBOL VF Maximum Full Load Reverse Current, Full cycle Average TA = 55oC Maximum DC Reverse Current at @TA = 25oC Rated DC Blocking Voltage @TA = 125oC IR Maximum Reverse Recovery Time (Note 1) trr NOTES : 1. Test Conditions: IF=0.5A, IR=-1.0A, IRR=-0.25A. 2. Measured at 1 MHZ and applied reverse voltage of 4.0 volts. HFM501 HFM502 HFM503 HFM504 HFM505 HFM506 HFM507 HFM508 1.0 1.3 50 1.7 UNITS Volts 50 uAmps 10 150 uAmps uAmps 75 nSec 2002-5 FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC trr +0.5A (-) (+) -1.0A 1cm SET TIME BASE FOR 10/20 ns/cm TJ = 100 1.0 TJ = 25 0.1 .01 5 8 50 M5 FM ~HF 1.0 TJ = 25 .10 Pulse Width = 300uS 1% Duty Cycle .01 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE, (%) 0 .2 .4 .6 .8 1.0 1.2 1.4 1.6 1.8 INSTANTANEOUS FORWARD VOLTAGE, (V) FIG. 6 - TYPICAL JUNCTION CAPACITANCE FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 200 300 8.3ms Single Half Sine-Wave (JEDEC Method) 200 HFM501~HFM505 100 JUNCTION CAPACITANCE, (pF) PEAK FORWARD SURGE CURRENT, (A) 25 50 75 100 125 150175 03 10 501 TJ = 150 10 0 AMBIENT TEMPERATURE ( FIG. 4 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 100 HFM 100 INSTANTANEOUS FORWARD CURRENT, (A) INSTANTANEOUS REVERSE CURRENT, (uA) FIG. 3 - TYPICAL REVERSE CHARACTERISTICS 1000 0 FM 50 1 megohm. 22pF. 2. Rise Time = 10ns max. Source Impedance = 50 ohms. 1 ~H NOTES:1 Rise Time = 7ns max. Input Impedance = 2 06 OSCILLOSCOPE (NOTE 1) 3 ~H 1 NONINDUCTIVE 0 -0.25A 4 M5 PULSE GENERATOR (NOTE 2) Single Phase Half Wave 60Hz Resistive or Inductive Load 5 04 (+) 25 Vdc (approx) (-) 6 HF D.U.T FIG. 2 - TYPICAL FORWARD CURRENT DERATING CURVE M5 10 NONINDUCTIVE HF 50 NONINDUCTIVE AVERAGE FORWARD CURENT, (A) RATING AND CHARACTERISTIC CURVES ( HFM501 THRU HFM508 ) 100 HFM 501 60 40 HFM 506 ~HF 20 10 ~HF M5 05 M50 8 TJ = 25 6 4 2 HFM506~HFM508 0 1 10 100 1000 NUMBER OF CYCLES AT 60Hz 1 .1 .2 .4 1.0 2 4 10 20 40 REVERSE VOLTAGE, ( V ) RECTRON 100 ) Mounting Pad Layout 0.185 MAX. (4.69 MAX.) 0.121 MIN. (3.07 MIN.) 0.060 MIN. (1.52 MIN.) 0.320 REF Dimensions in inches and (millimeters) RECTRON