317

SENSITRON
SEMICONDUCTOR
SHD217302
SHD217302A
TECHNICAL DATA
DATA SHEET 317, REV B
HERMETIC POWER MOSFET
N-CHANNEL
FEATURES:
 100 Volt, 0.16 Ohm, 14A MOSFET
 Fast Switching
 Low RDS (on)
 Equivalent to IRF130 Series
MAXIMUM RATINGS
ALL RATINGS ARE AT TC = 25C UNLESS OTHERWISE SPECIFIED.
RATING
GATE TO SOURCE VOLTAGE
ON-STATE DRAIN CURRENT
@ TC = 100C
OPERATING AND STORAGE TEMPERATURE
TOTAL DEVICE DISSIPATION @ TC = 25C
THERMAL RESISTANCE, JUNCTION TO CASE
SYMBOL
VGS
ID
TOP/TSTG
PD
RthJC
MIN.
-55
-
TYP.
-
MAX.
20
14
+150
96
1.9
UNITS
Volts
Amps
C
Watts
C/W
SYMBOL
BVDSS
MIN.
100
TYP.
-
MAX.
-
UNITS
Volts
RDS(ON)
-
0.14
0.16

VGS(th)
gfs
2.0
4.6
2.8
7.0
4.0
-
Volts
S(1/)
-
A
ELECTRICAL CHARACTERISTICS
RATING
DRAIN TO SOURCE BREAKDOWN VOLTAGE
VGS = 0V, ID = 1.0mA
STATIC DRAIN TO SOURCE ON STATE RESISTANCE
VGS = 10V, ID = 8.4A
GATE THRESHOLD VOLTAGE
VDS = VGS, ID = 250A
FORWARD TRANSCONDUCTANCE
VDS  ID (ON) X, RDS (ON) Max., IDS = 0.6 X ID
ZERO GATE VOLTAGE DRAIN CURRENT
VDS = Max. Rating, VGS = 0V
VDS = 0.8xMax. Rating, VGS = 0V, TJ = 125C
GATE TO SOURCE LEAKAGE FORWARD
VGS = 20V
GATE TO SOURCE LEAKAGE REVERSE
VGS = -20V
TURN ON DELAY TIME
VDD = 50V,
RISE TIME
ID = 7.0A,
TURN OFF DELAY TIME
RG = 12,
FALL TIME
VGS = 10V
DIODE FORWARD VOLTAGE
TC = 25C, IS = 14A,
VGS = 0V
REVERSE RECOVERY TIME
T J = 25C,
If = 14A,
diF/ds = 100A/sec,
INPUT CAPACITANCE
VGS = 0 V
OUTPUT CAPACITANCE
VDS = 25 V
REVERSE TRANSFER CAPACITANCE
f = 1.0MHz
IDSS
IGSS
-
-
td(ON)
tr
td(OFF)
tf
VSD
-
-
9.5
42
22
25
1.0
250
1000
100
-100
14
63
33
38
2.5
trr
-
-
250
nA
nsec
Volts
nsec
Ciss
Coss
Crss
-
650
240
44
-
©2015 Sensitron Semiconductor • 221 West Industry Court • Deer Park, NY 11729-4681
Tel: (631) 586-7600 • Fax: (631) 242-9798 • www.sensitron.com • [email protected]
pF
SHD217302
SHD217302A
SENSITRON
TECHNICAL DATA
DATA SHEET 317, REV B
MECHANICAL DIMENSIONS: in Inches / mm
.290±.010
(7.37±.254)
.440±.020
(11.2±.508)
.290±.010
(7.37±.254)
2
.065±.010
(1.65±.254)
.020±.010
(.508±.254)
2
.350±.010
(8.89±.254)
.020±.010
(.508±.254)
3
.185±.010
(4.70±.254)
.350±.010
(8.89±.254)
3
.110 (2.80) Max
Alumina Ring
.110 (2.79) Max
.020±.005 R
(.508±.127 )
Moly Lid
Terminal 1
SHD-4
Alumina Ring
Moly Base
Terminal 1
.020±.002
(.508±.051)
.060±.010
(1.52±.254)
SHD-4A
PINOUT TABLE
DEVICE TYPE
N-CHANNEL MOSFET
SHD-4A PACKAGE
PIN 1
DRAIN
PIN 2
SOURCE
PIN 3
GATE
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the
datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical
equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’
fail-safe precautions or other arrangement .
3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of
the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any
other problems that may result from applications of information, products or circuits described in the datasheets.
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at
a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor.
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exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.
©2015 Sensitron Semiconductor • 221 West Industry Court • Deer Park, NY 11729-4681
Tel: (631) 586-7600 • Fax: (631) 242-9798 • www.sensitron.com • [email protected]