4193

SENSITRON
SEMICONDUCTOR
SHD226703
TECHNICAL DATA
DATASHEET 4193, REV. -
HERMETIC POWER MOSFET - N-CHANNEL
FEATURES:
• 200 Volt, 0.08 Ohm, 27A MOSFET
• Isolated Hermetic Metal Package
• Low RDS (on)
MAXIMUM RATINGS
ALL RATINGS ARE AT TC = 25°C UNLESS OTHERWISE SPECIFIED.
RATING
GATE TO SOURCE VOLTAGE
ON-STATE DRAIN CURRENT
PULSED DRAIN CURRENT
OPERATING AND STORAGE TEMPERATURE
TOTAL DEVICE DISSIPATION
THERMAL RESISTANCE, JUNCTION TO CASE
SYMBOL
VGS
ID25
IDM
TJ /TSTG
PD
RθJC
MIN.
-55
-
TYP.
-
MAX.
±20
27
60
+175
150
1
UNITS
Volts
Amps
Amps
°C
Watts
°C/W
SYMBOL
BVDSS
MIN.
200
TYP.
-
MAX.
-
UNITS
Volts
VGS(th)
gfs
2
15
0.07
-
0.08
4
-
IDSS
-
-
IGSS
-
-
td(ON)
tr
-
15
35
1
50
100
-100
25
55
nsec
60
45
1.5
Volts
nsec
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC
DRAIN TO SOURCE BREAKDOWN VOLTAGE
VGS = 0V, ID = 250µA
STATIC DRAIN TO SOURCE ON STATE RESISTANCE
VGS = 10V, ID = 20A
GATE THRESHOLD VOLTAGE
VDS = VGS, ID = 250µA
FORWARD TRANSCONDUCTANCE
VDS = 15V, ID = 30A
ZERO GATE VOLTAGE DRAIN CURRENT
VDS = 0.8 x Max. rating, VGS = 0V, TJ = 25°C
TJ = 125°C
GATE TO SOURCE LEAKAGE FORWARD
VGS = 20V
GATE TO SOURCE LEAKAGE REVERSE
VGS = -20V
TURN ON DELAY TIME
VDD = 100V
RISE TIME
ID = 20A
TURN OFF DELAY TIME
V GS=10V
FALL TIME
RG = 2.5Ω
DIODE FORWARD VOLTAGE
IF = 20A, VGS = 0V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
REVERSE RECOVERY TIME
TJ = 25°C,
IF =50A, VR = 100V
di/dt = 100A/µsec
INPUT CAPACITANCE
VGS = 0 V,
OUTPUT CAPACITANCE
VDS = 25 V,
REVERSE TRANSFER CAPACITANCE
f = 1.0MHz
Ω
RDS(ON)
td(OFF)
tf
VSD
-
40
30
1.0
trr
-
115
170
Ciss
Coss
Crss
-
2150
215
90
-
Volts
S(1/Ω)
•221 WEST INDUSTRY COURT • DEER PARK, NY 11729-4681 • PHONE (631) 586-7600 • FAX (631) 242-9798•
• World Wide Web Site - www.sensitron.com • E-Mail Address - [email protected] •
µA
nA
pF
SHD226703
SENSITRON
TECHNICAL DATA
DATASHEET 4193, REV. –
MECHANICAL DIMENSIONS: in Inches / mm
.150
.140
(3.81
Dia.
3.56)
.665 (16.89
.645 16.38)
.537 (13.64
.527 13.39)
1.132 (28.75
1.032 26.21)
1 2
.035 (0.89
.025 0.63)
3 Places
.200 (5.08
.190 4.82)
.420 (10.67
.410 10.41)
.045 (1.14
.035 0.89)
.430 (10.92
.410 10.41)
3
.100(2.54) BSC
2 Places
.120(3.05) BSC
TO-257
DEVICE TYPE
N-CHANNEL MOSFET
TO-257 PACKAGE
PIN-1
DRAIN
PIN-2
SOURCE
PIN-3
GATE
•221 WEST INDUSTRY COURT • DEER PARK, NY 11729-4681 • PHONE (631) 586-7600 • FAX (631) 242-9798•
• World Wide Web Site - www.sensitron.com • E-Mail Address - [email protected] •
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version
of the datasheet(s).
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medical equipment, and safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement.
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4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from
use at a value exceeding the absolute maximum rating.
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• 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 •
• World Wide Web - http://www.sensitron.com • E-Mail Address - [email protected]
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