High Efficient Rectifier( EGC10DH THUR EGC10MH Datasheet )

ZOWIE
High Efficient Rectifier
(200V~1000V / 1.0A)
EGC10DH THRU EGC10MH
FEATURES
OUTLINE DIMENSIONS
Halogen-free type
Compliance to RoHS product
GPRC (Glass passivated rectifier chip) inside
Glass passivated cavity-free junction
Lead less chip form, no lead damage
Low power loss, High efficiency
High current capability
Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
Case : 2010
Unit : mm
0.05
4.5 ± 0.1
2.20 ± 0.1
*
*
*
*
*
*
*
*
0
0.5
0.95 ± 0.2
0.95 ± 0.2
+ 0.2
0.96
- 0.1
APPLICATION
* General purpose rectification
* Surge absorption
JEDEC : SMA
DO-214AC
MECHANICAL DATA
Case : Packed with FRP substrate and epoxy underfilled
Terminals : Pure Tin plated (Lead-Free),
solderable per MIL-STD-750, Method 2026.
Polarity : Cathode Band, Laser marking
Weight : 0.02 gram
MARKING
Series code
Cathode mark
EGC
10D .
Halogen-free type
Amps class
Voltage class
PACKING
* 3,000 pieces per 7" (178mm ± 2mm) reel
* 4 reels per box
* 6 boxes per carton
Voltage class: D = 200V, G = 400V
J = 600V, K = 800V, M = 1000V
o
Absolute Maximum Ratings (Ta = 25 C)
EGC10
ITEM
Symbol
Conditions
DH
GH
JH
KH
MH
200
400
600
800
1000
Unit
Repetitive peak reverse voltage
VRRM
Average forward current
IF(AV)
Peak forward surge current
IFSM
8.3ms single half sine-wave
30
25
A
Trr
IF = 0.5A, IR = 1.0A, Irr = 0.25A
50
75
nS
Reverse recovery time
Operating junction and storage temperature Range
ITEM
Forward voltage
Repetitive peak reverse current
Junction capacitance
Thermal resistance
1.0
Tj,TSTG
Symbol
V
A
o
-65 to +175
Type
Min.
Typ.
Max.
EGC10DH
EGC10GH
EGC10JH
EGC10KH
EGC10MH
-
0.95
1.00
-
1.05
1.25
-
1.45
1.70
-
1.45
1.70
-
1.45
1.70
VR = Max. VRRM , Ta = 25 C
-
0.10
5
uA
VR = 4V, f = 1.0 MHz
-
9
-
pF
Rth(JA)
Junction to ambient (NOTE)
-
65
-
Rth(JL)
Junction to lead (NOTE)
-
14
-
VF
IRRM
Cj
Conditions
C
IF = 1.0A
o
Unit
V
o
C/W
NOTES : Thermal resistance from junction to ambient and from junction to lead P.C.B. mounted on 0.2 x 0.2" (5.0 x 5.0mm) copper pad areas.
REV. 0
2009/10
ZOWIE
EGC10DH THUR EGC10MH
FIG.1 - TYPICAL FORWARD CURRENT DERATING CURVE
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
30
RESISTIVE OR
INDUCTIVE LOAD
PEAK FORWARD SURGE CURRENT,
AMPERES
AVERAGE FORWARD RECTIFIED
CURRENT, AMPERES
1.0
0.5
8.3ms SINGLE HALF SINE-WAVE
25
20
15
EGC10DH & EGC10GH
EGC10JH ~ EGC10MH
10
5
0
0
0
25
50
75
100
125
150
1
175
10
100
LEAD TEMPERATURE, C
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
PER BRIDGE ELEMENT
o
100
INSTANTANEOUS REVERSE CURRENT,
MICROAMPERES
10.00
IINSTANTANEOUS FORWARD CURRENT,
AMPERES
(200V~1000V / 1.0 A)
1.00
0.10
o
TJ=25 C
o
TJ=150 C
10.0
o
TJ=125 C
1.0
o
TJ=25 C
0.10
EGC10DH
EGC10GH
EGC10JH~EGC10MH
0.01
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5 - TYPICAL JUNCTION CAPACITANCE
200
o
JUNCTION CAPACITANCE, pF
TJ = 25 C
100
60
40
20
10
6
4
2
1
.1
.2
.4
1.0
2
4
10
20
40
100
REVERSE VOLTAGE, VOLTS
REV. 0
2009/10