DATASHEET

36V Radiation Hardened Dual Precision Operational
Amplifier
ISL70227SEH
Features
The ISL70227SEH is a high precision dual operational
amplifier featuring very low noise, low offset voltage, low input
bias current and low temperature drift. These features plus its
radiation tolerance, make the ISL70227SEH the ideal choice
for applications requiring both high DC accuracy and AC
performance. The combination of precision, low noise and
small footprint provides the user with outstanding value and
flexibility relative to similar competitive parts.
• Electrically screened to DLA SMD# 5962-12223
Applications for these amplifiers include precision and
analytical instrumentation, active filters, and power supply
controls.
• Low input voltage offset . . . . . . . . . . . . . . . . . . . . . . 10µV, typ.
The ISL70227SEH is available in a 10 lead hermetic ceramic
flatpack and operates over the extended temperature range of
-55°C to +125°C.
• No phase reversal
Applications
• Power supply control
• Industrial controls
• Active filter blocks
• Data acquisition
• Wide supply range . . . . . . . . . . . . . . . . . . . . 4.5V to 42V max.
• Very low voltage noise . . . . . . . . . . . . . . . . . . . 2.5nV/√Hz, typ.
• Gain-bandwidth product. . . . . . . . . . . . . . . . . . . . . . . . . 10MHz
• Superb offset drift . . . . . . . . . . . . . . . . . . . . . . . . 1µV/°C, max
• Operating temperature range. . . . . . . . . . . .-55°C to +125°C
• Input bias current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1nA, typ.
• Unity gain stable
• Radiation tolerance
- High dose rate . . . . . . . . . . . . . . . . . . . . . . . . . . 100krad(Si)
- Low dose rate . . . . . . . . . . . . . . . . . . . . . . . . . . 100krad(Si)*
- SEL/SEB LETTH (VS = ±18V) . . . . . . . . . 86.4MeV/mg/cm2
- SEL immune (SOI process)
* Product capability established by initial characterization. The
EH version is acceptance tested on a wafer by wafer basis to
50krad(Si) at low dose rate.
Related Literature
• AN1669, “ISL70227SRH Evaluation Board User’s Guide”
• AN1756, “Single Events Effects Testing of the
ISL70227SRH, Dual 36V Rad Hard Precision Operational
Amplifiers”
R3
25
243Ω
V+
20
GROUNDED
VIN
R1
R2
ISL70227SEH
+
95.3Ω
232Ω
C2
680pF
V-
OUTPUT
VOS (µV)
15
BIASED
10
5
C1
0
0
1.5nF
SALLEN-KEY LOW PASS FILTER (1MHz)
FIGURE 1. TYPICAL APPLICATION
July 18, 2014
FN7958.3
1
10
20
30
40
50
60
70
80
90
100
TOTAL DOSE (krad(Si))
FIGURE 2. OFFSET VOLTAGE vs LOW DOSE RADIATION
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774 | Copyright Intersil Americas LLC 2012, 2013, 2014. All Rights Reserved
Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries.
All other trademarks mentioned are the property of their respective owners.
ISL70227SEH
Ordering Information
ORDERING SMD NUMBER
(Note 2)
PART
NUMBER
TEMP RANGE
(°C)
PACKAGE
(Pb-Free)
PKG.
DWG. #
5962R1222301VXC (Note 1)
ISL70227SEHVF
-55 to +125
10 Ld Flatpack
K10.A
ISL70227SEHF/PROTO (Note 1)
ISL70227SEHF/PROTO
-55 to +125
10 Ld Flatpack
K10.A
5962R1222301V9A
ISL70227SEHVX
-55 to +125
Die
ISL70227SEHX/SAMPLE
ISL70227SEHVX/SAMPLE
-55 to +125
Die
ISL70227MHEVAL1Z
Evaluation Board
NOTES:
1. These Intersil Pb-free Hermetic packaged products employ 100% Au plate - e4 termination finish, which is RoHS compliant and compatible with both
SnPb and Pb-free soldering operations.
2. Specifications for Rad Hard QML devices are controlled by the Defense Logistics Agency Land and Maritime (DLA). The SMD numbers listed in the
“Ordering Information” table must be used when ordering.
Pin Configuration
ISL70227SEH
(10 LD FLATPACK)
TOP VIEW
OUTA
1
10
-IN A
2
9
OUT B
+IN A
3
8
-IN B
NC
4
7
+IN B
V-
5
6
NC
- +
+ -
V+
Pin Descriptions
PIN NUMBER
PIN NAME
EQUIVALENT CIRCUIT
DESCRIPTION
3
+IN A
Circuit 1
Amplifier A Non-inverting Input
5
V-
Circuit 3
Negative Power Supply
7
+IN B
Circuit 1
Amplifier B Non-inverting Input
8
-IN B
Circuit 1
Amplifier B Inverting Input
9
OUT B
Circuit 2
Amplifier B Output
10
V+
Circuit 3
Positive Power Supply
1
OUT A
Circuit 2
Amplifier A Output
2
-IN A
Circuit 1
Amplifier A Inverting Input
4, 6
NC
-
Not Connected – This pin is not electrically connected internally.
V+
IN-
V+
V-
V-
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CIRCUIT 2
2
CAPACITIVELY
TRIGGERED ESD
CLAMP
OUT
IN+
CIRCUIT 1
V+
V-
CIRCUIT 3
FN7958.3
July 18, 2014
ISL70227SEH
Absolute Maximum Ratings
Thermal Information
Maximum Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42V
Maximum Supply Voltage (LET = 86.4 MeV•cm2/mg) . . . . . . . . . . . . . 36V
Maximum Differential Input Current . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA
Maximum Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . .0.5V
Min/Max Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . V- - 0.5V to V+ + 0.5V
Max/Min Input Current for
Input Voltage >V+ or <V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20mA
Output Short-Circuit Duration
(1 output at a Time) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Indefinite
ESD Tolerance
Human Body Model (Tested per MIL-PRF-883 3015.7). . . . . . . . . . . 2kV
Machine Model (Tested per JESD22-A115-A) . . . . . . . . . . . . . . . . . . 300V
Charged Device Model (Tested per CDM-22CI0ID) . . . . . . . . . . . . . . 750V
Di-electrically Isolated PR40 Process . . . . . . . . . . . . . . . . . . . Latch-up free
Thermal Resistance (Typical)
JA (°C/W) JC (°C/W)
10 Ld Ceramic Flatpack (Notes 3, 4) . . . . .
130
20
Storage Temperature Range. . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C
Pb-Free Reflow Profile . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . see TB493
Recommended Operating Conditions
Ambient Operating Temperature Range . . . . . . . . . . . . . .-55°C to +125°C
Maximum Operating Junction Temperature . . . . . . . . . . . . . . . . . .+150°C
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . 4.5V (±2.25V) to 30V (±15V)
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product
reliability and result in failures not covered by warranty.
NOTES:
3. JA is measured with the component mounted on a low effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
4. For JC, the “case temp” location is the center of the ceramic on the package underside.
Electrical Specifications VS ±15V, VCM = 0, VO = 0V, RL = Open, TA = +25°C, unless otherwise noted. Boldface limits apply across
the operating temperature range, -55°C to +125°C.
PARAMETER
VOS
DESCRIPTION
CONDITIONS
Offset Voltage
MIN
(Note 5)
TYP
MAX
(Note 5)
UNIT
-75
-10
75
µV
100
µV
-100
TCVOS
Offset Voltage Drift
-1
0.1
1
µV/°C
IOS
Input Offset Current
-10
1
10
nA
12
nA
10
nA
-12
12
nA
-13
13
V
-12
12
V
-12
IB
VCM
CMRR
PSRR
Input Bias Current
Input Voltage Range
Common-Mode Rejection Ratio
Power Supply Rejection Ratio
-10
Guaranteed by CMRR
VCM = -13V to +13V
115
VCM = -12V to +12V
115
VS = ±2.25V to ±5V
110
VS = ±3V to ±15V
110
1
120
dB
dB
117
dB
dB
AVOL
Open-Loop Gain
VO = -13V to +13V
RL = 10kΩ to ground
1000
1500
V/mV
VOH
Output Voltage High
RL = 10kΩ to ground
13.5
13.65
V
13.2
RL = 2kΩ to ground
13.4
V
13.5
V
13.1
VOL
Output Voltage Low
RL = 10kΩ to ground
RL = 2kΩ to ground
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3
V
-13.65
-13.5
-13.5
V
-13.2
V
-13.4
V
-13.1
V
FN7958.3
July 18, 2014
ISL70227SEH
Electrical Specifications VS ±15V, VCM = 0, VO = 0V, RL = Open, TA = +25°C, unless otherwise noted. Boldface limits apply across
the operating temperature range, -55°C to +125°C. (Continued)
PARAMETER
IS
ISC
VSUPPLY
DESCRIPTION
CONDITIONS
MIN
(Note 5)
Supply Current/Amplifier
TYP
MAX
(Note 5)
2.2
Short-Circuit
RL = 0Ωto ground
Supply Voltage Range
Guaranteed by PSRR
UNIT
2.8
mA
3.7
mA
±45
mA
±2.25
±15
V
AC SPECIFICATIONS
GBW
Gain Bandwidth Product
10
MHz
enp-p
Voltage Noise
0.1Hz to 10Hz
85
nVP-P
en
Voltage Noise Density
f = 10Hz
3
nV/Hz
en
Voltage Noise Density
f = 100Hz
2.8
nV/Hz
en
Voltage Noise Density
f = 1kHz
2.5
nV/Hz
en
Voltage Noise Density
f = 10kHz
2.5
nV/Hz
in
Current Noise Density
f = 10kHz
0.4
pA/Hz
Total Harmonic Distortion + Noise
1kHz, G = 1, VO = 3.5VRMS,
RL = 2kΩ
0.00022
%
±3.6
V/µs
THD + N
TRANSIENT RESPONSE
SR
Slew Rate
AV = 10, RL = 2kΩVO = 4VP-P
±2.5
±2.0
tr, tf, Small
Signal
V/µs
Rise Time
10% to 90% of VOUT
AV = -1, VOUT = 100mVP-P,
Rf = Rg = 2kΩRL = 2kΩto VCM
36
Fall Time
90% to 10% of VOUT
AV = -1, VOUT = 100mVP-P,
Rf = Rg = 2kΩRL = 2kΩto VCM
38
Settling Time to 0.1%
10V Step; 10% to VOUT
AV = -1, VOUT = 10VP-P,
Rg = Rf = 10k, RL = 2kΩto VCM
3.4
µs
Settling Time to 0.01%
10V Step; 10% to VOUT
AV = -1, VOUT = 10VP-P,
RL = 2kΩto VCM
3.8
µs
tOL
Output Overload Recovery Time
AV = 100, VIN = 0.2V,
RL = 2kΩto VCM
1.7
µs
OS+
Positive Overshoot
AV = 1, VOUT = 10VP-P, Rf = 0Ω
RL = 2kΩto VCM
20
%
AV = 1, VOUT = 10VP-P, Rf = 0Ω
RL = 2kΩto VCM
20
ts
OS-
Negative Overshoot
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4
100
ns
100
ns
100
ns
100
ns
35
%
%
35
%
FN7958.3
July 18, 2014
ISL70227SEH
Electrical Specifications
VS ±15V, VCM = 0, VO = 0V, RL = Open, TA= +25°C, unless otherwise noted. Boldface limits apply across
a total ionizing dose of 100krad(Si) with exposure at a high dose rate of 50 - 300krad(Si)/s; and over a total ionizing dose of 50krad(Si) with
exposure at a low dose rate of <10mrad(Si)/s.
PARAMETER
VOS
DESCRIPTION
CONDITIONS
Offset Voltage
MIN
(Note 5)
TYP
MAX
(Note 5)
UNIT
-75
-10
75
µV
100
µV
-100
TCVOS
Offset Voltage Drift
-1
0.1
1
µV/°C
IOS
Input Offset Current
-10
1
10
nA
25
nA
10
nA
-25
25
nA
-13
13
V
-12
12
V
-25
IB
VCM
CMRR
PSRR
Input Bias Current
Input Voltage Range
Common-Mode Rejection Ratio
Power Supply Rejection Ratio
-10
Guaranteed by CMRR
VCM = -13V to +13V
115
VCM = -12V to +12V
115
VS = ±2.25V to ±5V
110
VS = ±3V to ±15V
110
1
120
dB
dB
117
dB
dB
AVOL
Open-Loop Gain
VO = -13V to +13V
RL = 10kΩ to ground
1000
1500
V/mV
VOH
Output Voltage High
RL = 10kΩ to ground
13.5
13.65
V
13.2
RL = 2kΩ to ground
13.4
V
13.5
V
13.1
VOL
Output Voltage Low
RL = 10kΩ to ground
-13.65
RL = 2kΩ to ground
IS
ISC
VSUPPLY
V
-13.5
Supply Current/Amplifier
2.2
Short-Circuit
RL = 0Ωto ground
Supply Voltage Range
Guaranteed by PSRR
-13.5
V
-13.2
V
-13.4
V
-13.1
V
2.8
mA
3.7
mA
±45
±2.25
mA
±15
V
AC SPECIFICATIONS
GBW
Gain Bandwidth Product
10
MHz
enp-p
Voltage Noise
0.1Hz to 10Hz
85
nVP-P
en
Voltage Noise Density
f = 10Hz
3
nV/√Hz
en
Voltage Noise Density
f = 100Hz
2.8
nV/√Hz
en
Voltage Noise Density
f = 1kHz
2.5
nV/√Hz
en
Voltage Noise Density
f = 10kHz
2.5
nV/Hz
in
Current Noise Density
f = 10kHz
0.4
pA/Hz
Total Harmonic Distortion + Noise
1kHz, G = 1, VO = 3.5VRMS,
RL = 2kΩ
0.00022
%
THD + N
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5
FN7958.3
July 18, 2014
ISL70227SEH
Electrical Specifications
VS ±15V, VCM = 0, VO = 0V, RL = Open, TA= +25°C, unless otherwise noted. Boldface limits apply across
a total ionizing dose of 100krad(Si) with exposure at a high dose rate of 50 - 300krad(Si)/s; and over a total ionizing dose of 50krad(Si) with
exposure at a low dose rate of <10mrad(Si)/s. (Continued)
PARAMETER
DESCRIPTION
CONDITIONS
MIN
(Note 5)
TYP
±2.5
±3.6
MAX
(Note 5)
UNIT
TRANSIENT RESPONSE
SR
Slew Rate
AV = 10, RL = 2kΩVO = 4VP-P
V/µs
±2.0
tr, tf, Small
Signal
V/µs
Rise Time
10% to 90% of VOUT
AV = -1, VOUT = 100mVP-P,
Rf = Rg = 2kΩRL = 2kΩto VCM
Fall Time
90% to 10% of VOUT
AV = -1, VOUT = 100mVP-P,
Rf = Rg = 2kΩRL = 2kΩto VCM
Settling Time to 0.1%
10V Step; 10% to VOUT
AV = -1, VOUT = 10VP-P,
Rg = Rf = 10k, RL = 2kΩto VCM
3.4
µs
Settling Time to 0.01%
10V Step; 10% to VOUT
AV = -1, VOUT = 10VP-P,
RL = 2kΩto VCM
3.8
µs
tOL
Output Overload Recovery Time
AV = 100, VIN = 0.2V,
RL = 2kΩto VCM
1.7
µs
OS+
Positive Overshoot
AV = 1, VOUT = 10VP-P, Rf = 0Ω
RL = 2kΩto VCM
20
%
AV = 1, VOUT = 10VP-P, Rf = 0Ω
RL = 2kΩto VCM
20
ts
OS-
Negative Overshoot
Electrical Specifications
temperature range, -55°C to +125°C.
PARAMETER
VOS
36
100
ns
100
ns
100
ns
100
ns
35
%
%
35
%
VS ±5V, VCM = 0, VO = 0V, TA = +25°C, unless otherwise noted. Boldface limits apply across the operating
DESCRIPTION
CONDITIONS
MIN
(Note 5)
TYP
MAX
(Note 5)
UNIT
Offset Voltage
-10
µV
TCVOS
Offset Voltage Drift
0.1
µV/°C
IOS
Input Offset Current
1
nA
IB
Input Bias Current
1
nA
CMRR
Common-Mode Rejection Ratio
VCM = -3V to +3V
120
dB
PSRR
Power Supply Rejection Ratio
VS = ±2.25V to ±5V
125
dB
AVOL
Open-Loop Gain
VO = -3V to +3V
RL = 10kΩ to ground
1500
V/mV
VOH
Output Voltage High
RL = 10kΩ to ground
3.65
V
RL = 2kΩ to ground
3.5
V
RL = 10kΩ to ground
-3.65
V
RL = 2kΩ to ground
-3.5
V
VOL
Output Voltage Low
IS
Supply Current/Amplifier
2.2
mA
ISC
Short-Circuit
±45
mA
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6
FN7958.3
July 18, 2014
ISL70227SEH
Electrical Specifications
VS ±5V, VCM = 0, VO = 0V, TA = +25°C, unless otherwise noted. Boldface limits apply across the operating
temperature range, -55°C to +125°C. (Continued)
PARAMETER
DESCRIPTION
CONDITIONS
MIN
(Note 5)
TYP
MAX
(Note 5)
UNIT
AC SPECIFICATIONS
GBW
THD + N
Gain Bandwidth Product
Total Harmonic Distortion + Noise
1kHz, G = 1, VO = 2.5VRMS,
RL = 2kΩ
10
MHz
0.0034
%
±3.6
V/µs
TRANSIENT RESPONSE
SR
tr, tf, Small
Signal
ts
Slew Rate
AV = 10, RL = 2kΩOH
Rise Time
10% to 90% of VOUT
AV = -1, VOUT = 100mVP-P,
Rf = Rg = 2kΩRL = 2kΩto VCM
36
ns
Fall Time
90% to 10% of VOUT
AV = -1, VOUT = 100mVP-P,
Rf = Rg = 2kΩRL = 2kΩto VCM
38
ns
Settling Time to 0.1%
AV = -1, VOUT = 4VP-P,
Rf = Rg = 2kΩRL = 2kΩto VCM
1.6
µs
Settling Time to 0.01%
AV = -1, VOUT = 4VP-P,
Rf = Rg = 2kΩRL = 2kΩto VCM
4.2
µs
NOTE:
5. Compliance to datasheet limits is assured by one or more methods: production test, characterization and/or design.
High Dose Rate Post Radiation Characteristics VS ±15V, VCM = 0V, VO = 0V, RL = Open, TA = +25°C, unless otherwise
noted. This data is typical test data post radiation exposure at a rate of 50 to 300rad(Si)/s. This data is intended to show typical parameter shifts due to
high dose rate radiation. These are not limits nor are they guaranteed.
PARAMETER
DESCRIPTION
CONDITIONS
50k RAD
75k RAD
100k RAD
UNIT
VOS
Offset Voltage
34
30
30
µV
IOS
Input Offset Current
-1
-1
-2
nA
IB
Input Bias Current
-1
-2
-3
nA
CMRR
Common-Mode Rejection Ration
VCM = -13V to +13V
155
155
155
dB
PSRR
Power Supply Rejection Ratio
VS = ±2.25V to ±15V
116
116
116
dB
AVOL
Open-Loop Gain
VO = -13V to +13V
RL = 10kΩ to ground
3500
3500
3500
V/mV
2.2
2.2
2.2
mA
IS
Supply Current/Amplifier
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FN7958.3
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ISL70227SEH
Low Dose Rate Post Radiation Characteristics
VS ±15V, VCM = 0V, VO = 0V, RL = Open, TA = +25°C, unless otherwise noted.
This data is typical test data post radiation exposure at a rate of 10mrad(Si)/s. This data is intended to show typical parameter shifts due to low dose
rate radiation. These are not limits nor are they guaranteed .
5
25
0
GROUNDED
GROUNDED
-5
15
IB+ (nA)
VOS (µV)
20
BIASED
10
-10
-15
5
BIASED
-20
0
0
10
20
30
40
50
60
70
80
90
-25
0
100
10
20
TOTAL DOSE (krad(Si))
40
50
60
70
80
90
100
TOTAL DOSE (krad(Si))
FIGURE 3. OFFSET VOLTAGE vs RADIATION
FIGURE 4. POSITIVE INPUT BIAS CURRENT vs RADIATION
0
0
GROUNDED
-5
GROUNDED
-5
BIASED
-10
-15
IIO (nA)
IB- (nA)
30
BIASED
-20
-10
-15
-20
-25
0
10
20
30
40
50
60
70
80
90
-25
100
0
10
20
TOTAL DOSE (krad(Si))
30
40
50
60
70
80
90
100
TOTAL DOSE (krad(Si))
FIGURE 6. OFFSET CURRENT vs RADIATION
FIGURE 5. NEGATIVE INPUT BIAS CURRENT vs RADIATION
SUPPLY CURRENT (mA)
10
BIASED
5
GROUNDED
0
0
10
20
30
40
50
60
70
80
90
100
TOTAL DOSE (krad(Si))
FIGURE 7. TOTAL SUPPLY CURRENT vs RADIATION
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FN7958.3
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ISL70227SEH
Typical Performance Curves
VS = ±15V, VCM = 0V, RL = Open, TA = +25°C, unless otherwise specified.
100
INPUT NOISE VOLTAGE (nV/Hz)
INPUT NOISE VOLTAGE (nV)
100
80
60
40
20
0
-20
V+ = 38V
RL = 10k
CL = 3.5pF
Rg = 10, Rf = 100k
AV = 10,000
-40
-60
-80
-100
0
1
2
3
4
5
6
7
8
9
VS = ±19V
AV = 1
10
1
0.1
10
1
10
TIME (s)
FIGURE 8. INPUT NOISE VOLTAGE 0.1Hz TO 10Hz
10
PSRR (dB )
INPUT NOISE CURRENT (pA/Hz)
VS = ±19V
AV = 1
1
1
10
100
1k
10k
100k
130
120
110
100
90
80
70
60
50
40
30
20
10
0
-10
RL = INF
CL = 5.25pF
AV = +1
VS = 1VP-P
PSRR+ and PSRR- VS = ±15V
10
100
1k
VS = ±5V
70
VS = ±2.25V
60
VS = ±15V
VOS (µV)
CMRR (dB)
10k
100k
10M
1M
FIGURE 11. PSRR vs FREQUENCY, VS = ±5V, ±15V
50
RL = INF
CL = 5.25pF
AV = +1
VCM = 1VP-P
VS = ±15V
40
30
20
10
1k
10k
100k
1M
10M
FREQUENCY (Hz)
FIGURE 12. CMRR vs FREQUENCY, VS = ±2.25, ±5V, ±15V
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100k
FREQUENCY (Hz)
FIGURE 10. INPUT NOISE CURRENT SPECTRAL DENSITY
100
10k
PSRR+ AND PSRR- VS = ±5V
FREQUENCY (Hz)
130
120
110
100
90
80
70
60
50
40
30
20
10
0
-10
10
1k
FIGURE 9. INPUT NOISE VOLTAGE SPECTRAL DENSITY
100
0.1
0.1
100
FREQUENCY (Hz)
9
0
-60
-40
-20
0
20
40
60
80
TEMPERATURE (°C)
100
120
140
FIGURE 13. VOS vs TEMPERATURE
FN7958.3
July 18, 2014
ISL70227SEH
Typical Performance Curves
VS = ±15V, VCM = 0V, RL = Open, TA = +25°C, unless otherwise specified. (Continued)
1.0
0
-0.1
0.8
-0.2
VS = ±15V
-0.3
0.4
IB- (nA)
IB+ (nA)
0.6
VS = ±15V
IB+
0.2
-0.4
-0.5
IB-
-0.6
0
-0.7
-0.2
-0.8
-0.4
-60
-40
-20
0
20
40
60
80
TEMPERATURE (°C)
100
120
-0.9
-60
140
-40
-20
0
20
40
60
80
TEMPERATURE (°C)
100
120
140
100
120
140
FIGURE 15. IB- vs TEMPERATURE
FIGURE 14. IB+ vs TEMPERATURE
3.5
0
-0.2
3.0
VS = ±15V
2.5
IIO
-0.6
ICC (mA)
IIO (nA)
-0.4
-0.8
VS = ±15V
2.0
1.5
-1.0
1.0
-1.2
0.5
-1.4
-60
-40
-20
0
20
40
60
80
100
120
ICC
0
-60
140
-40
-20
0
TEMPERATURE (°C)
14.2
-13.0
14.0
-13.2
13.8
-13.4
VOH 10k
VOH 2k
13.4
40
60
80
FIGURE 17. SUPPLY CURRENT vs TEMPERATURE
VOUT (V)
VOUT (V)
FIGURE 16. IOS vs TEMPERATURE
13.6
20
TEMPERATURE (°C)
VOL 2k
VOL 10k
-13.6
-13.8
-14.0
13.2
13.0
-80
-60
-40
-20
0
20
40
60
80
100 120 140
TEMPERATURE (°C)
FIGURE 18. VOH vs TEMPERATURE, VS = ±15V
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10
-14.2
-80
-60
-40
-20
0
20
40
60
80
100 120 140
TEMPERATURE (°C)
FIGURE 19. VOL vs TEMPERATURE, VS = ±15V
FN7958.3
July 18, 2014
ISL70227SEH
14
13
12
11
10
9
8
7
6
5
4
AV = 10,
3
VIN = 1.31V
2
VS = ±15V
1
0
0.0001
0.001
VS = ±15V, VCM = 0V, RL = Open, TA = +25°C, unless otherwise specified. (Continued)
OPEN-LOOP GAIN (dB)/PHASE (°)
VOH (V)
Typical Performance Curves
VOUT (V) -55°C
VOUT (V) 0°C
VOUT (V) +25°C
VOUT (V) +125°C
0.01
0.1
1
10
OUTPUT CURRENT (mA)
0
-1
-2
-3
-4
-5
-6
-7
-8
-9
-10
-11
-12
-13
-14
0.0001
FIGURE 21. OPEN-LOOP GAIN, PHASE vs FREQUENCY, RL = 10kΩ
CL = 10pF
AV = 10,
VIN = - 1.31V
VS = ±15V
OPEN-LOOP GAIN (dB)/PHASE(°)
VOL (V)
FIGURE 20. VOH vs OUTPUT CURRENT
VOUT (V) +125°C
VOUT (V) +25°C
VOUT (V) 0°C
VOUT (V) -55°C
0.001
0.01
0.1
200
180
160
140
PHASE
120
100
80
60
40
GAIN
20
0
-20 R = 10k
L
-40
CL = 10pF
-60
-80 SIMULATION
-100
0.1m 1m 10m 100m 1 10 100 1k 10k 100k 1M 10M 100M
FREQUENCY (Hz)
1
10
200
180
160
140
120
100
80
60
40
20
0
-20 R = 10k
L
-40
CL = 100pF
-60
SIMULATION
-80
-100
0.1m 1m 10m 100m 1
OUTPUT CURRENT (mA)
21
AV = 1000
Rg = 100, Rf = 100k
AV = 10
0
-60°C
17
16
15
14
Rg = 10k, Rf = 100k
13
AV = 1
-10
100
GAIN (dB)
GAIN (dB)
VS = ±15V
CL = 3.5pF
RL = INF
VOUT = 100mVP-P
30
12
Rg = OPEN, Rf = 0
1k
10k
100k
1M
FREQUENCY (Hz)
10M
100M
FIGURE 24. FREQUENCY RESPONSE vs CLOSED LOOP GAIN
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11
+25°C
+125°C
19
18
AV = 100
10
+130°C
20
Rg = 1k, Rf = 100k
50
20
10 100 1k 10k 100k 1M 10M 100M
FIGURE 23. OPEN-LOOP GAIN, PHASE vs FREQUENCY, RL = 10kΩ
CL = 100pF
70
40
GAIN
FREQUENCY (Hz)
FIGURE 22. VOL vs OUTPUT CURRENT
60
PHASE
AV = 10,
VOUT = 100mVP-P,
VS = +-15V, RL = 2kΩ
11
100
1k
10k
100k
1M
10M
FREQUENCY (Hz)
FIGURE 25. GAIN vs FREQUENCY vs TEMPERATURE
FN7958.3
July 18, 2014
ISL70227SEH
Typical Performance Curves
15
2
Rf = Rg = 100k
13
RL = 10k
Rf = Rg = 10k
11
1
NORMALIZED GAIN (dB)
NORMALIZED GAIN (dB)
VS = ±15V, VCM = 0V, RL = Open, TA = +25°C, unless otherwise specified. (Continued)
Rf = Rg = 1k
9
7
5
3
VS = ±15V
1 RL = 10k
-1 CL = 3.5pF
AV = +2
-3
VOUT = 100mVP-P
-5
10k
1k
Rf = Rg = 100
100k
1M
10M
RL = 1k
0
-1
RL = 499
-2
-3
CL = 3.5pF
AV = +1
VOUT = 100mVP-P
-4
-5
1k
100M
RL = 100
VS = ±15V
10k
100k
1M
FREQUENCY (Hz)
FREQUENCY (Hz)
FIGURE 26. FREQUENCY RESPONSE vs FEEDBACK RESISTANCE
Rf/Rg
NORMALIZED GAIN (dB)
6
5
4
NORMALIZED GAIN (dB)
VS = ±15V
RL = 10k
AV = +1
VOUT = 100mVP-P
CL = 1000pF
CL = 220pF
3
CL = 100pF
2
CL = 25.5pF
1
0
-1
-3
1k
10k
100k
1M
FREQUENCY (Hz)
10M
VS = ±5V
-1
VS = ±15V
CL = 3.5pF
RL = 10k
AV = +1
VOUT = 100mVP-P
-2
1k
10k
100k
1M
10M
100M
FREQUENCY (Hz)
FIGURE 29. GAIN vs FREQUENCY vs SUPPLY VOLTAGE
6
6
5
5
4
4
VS = ±15V
CL = 3.5pF
AV = 1
Rf = 0 Rg = inf
VOUT = 10VP-P
3
2
1
0
LARGE SIGNAL (V)
LARGE SIGNAL (V)
0
-3
100M
FIGURE 28. GAIN vs FREQUENCY vs CL
1
-2
-3
RL = 2k
RL = 10k
-4
0
5
10
15
TIME (µs)
20
25
30
FIGURE 30. LARGE SIGNAL 10V STEP RESPONSE, VS = ±15V
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12
OUTPUT +125°C
3
2
OUTPUT +25°C
1
OUTPUT -55°C
0
-1
VS = ±15V
RL = 2k
AV = 1
Rf = 0 Rg = inf
VOUT = 10VP-P
-2
-3
-4
-5
-5
-6
100M
VS = ±2.25V
CL = 3.5pF
-2
10M
FIGURE 27. GAIN vs FREQUENCY vs RL
1
7
RL = 49.9
-6
0
10
20
TIME (µs)
30
40
FIGURE 31. LARGE SIGNAL 10V STEP RESPONSE, VS = ±15V vs
TEMPERATURE
FN7958.3
July 18, 2014
ISL70227SEH
Typical Performance Curves
VS = ±15V, VCM = 0V, RL = Open, TA = +25°C, unless otherwise specified. (Continued)
80
2.4
60
VS = ±15V, RL = 2k, 10k
0.8
0.4
0
-0.4
VS = ±5V, RL = 2k, 10k
-0.8
-1.2
CL = 3.5pF
AV = 1
VOUT = 4VP-P
-1.6
-2.0
-2.4
0
5
10
15
30
35
-0.26
13
0.22
11
0.08
VS = ±15V
RL = 10k
CL = 3.5pF
AV = 100
Rf = 100k, Rg = 1k
VIN = 200mVP-P
9
7
5
OUTPUT
0
5
10
15
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0.26
20
25
TIME (µs)
30
35
INPUT (V)
INPUT (V)
-0.02
-0.20
0
2.0
FIGURE 33. SMALL SIGNAL TRANSIENT RESPONSE, VS = ±5V, ±15V
OUTPUT (V)
INPUT
-0.18
RL = 2k
CL = 3.5pF
AV = 1
VOUT = 100mVP-P
40
80
15
-0.14
20
TIME (ms)
0.06
-0.10
VS = ±5V, ±15V
0
40
FIGURE 32. LARGE SIGNAL TRANSIENT RESPONSE vs RL,
VS = ±5V, ±15V
-0.06
20
60
20
25
TIME (µs)
0.02
40
2
OUTPUT
0.04
0.10
0.06
3
0.02
1
-0.02
FIGURE 34. POSITIVE OUTPUT OVERLOAD RESPONSE TIME,
VS = ±15V
VS = ±15V
RL = 10k
CL = 3.5pF
AV = 100
Rf = 100k, Rg = 1k
VIN = 200mVP-P
-2
INPUT
-10
-4
-6
-8
-12
-0.06
0
-1
40
0
OUTPUT (V)
1.6
1.2
SMALL SIGNAL (mV)
LARGE SIGNAL (V)
2.0
5
10
15
20
25
TIME (µs)
30
-14
40
35
FIGURE 35. NEGATIVE OUTPUT OVERLOAD RESPONSE TIME,
VS = ±15V
90
80
OVERSHOOT (%)
70
60
50
40
VS = ±15V
RL = 10k
AV = 1
VOUT = 100mVP-P
O
SH
ER
OV
30
20
O
OT
HO
RS
VE
+
OT
-
10
0
10
100
1000
CAPACITANCE (pF)
10000
FIGURE 36. % OVERSHOOT vs LOAD CAPACITANCE, VS = ±15V
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13
FN7958.3
July 18, 2014
ISL70227SEH
Applications Information
Functional Description
V+
The ISL70227SEH is a dual, low noise 10MHz BW precision
op amp fabricated in a new precision 40V complementary
bipolar DI process. A super-beta NPN input stage with input bias
current cancellation provides low input bias current (1nA typical),
low input offset voltage (10µV typ), low input noise voltage
(3nV/Hz), and low 1/f noise corner frequency (5Hz). These
amplifiers also feature high open-loop gain (1500V/mV) for
excellent CMRR (120dB) and THD+N performance (0.0002% at
3.5VRMS, 1kHz into 2kΩ). A complimentary bipolar output stage
enables high capacitive load drive without external
compensation.
Operating Voltage Range
VINVIN+
RINRIN+
-
VOUT
+
RL
V-
FIGURE 38. INPUT ESD DIODE CURRENT LIMITING - DIFFERENTIAL
INPUT
Output Current Limiting
The devices are designed to operate over the 4.5V (±2.25V) to
36V (±18V) range and are fully characterized at 30V (±15V).
Parameter variation with operating voltage is shown in the
“Typical Performance Curves” beginning on page 9.
The output current is internally limited to approximately ±45mA
at +25°C and can withstand a short circuit to either rail as long
as the power dissipation limits are not exceeded. This applies to
only one amplifier at a time. Continuous operation under these
conditions may degrade long term reliability.
Input ESD Diode Protection
Output Phase Reversal
The input terminals (IN+ and IN-) have internal ESD protection
diodes to the positive and negative supply rails, and an additional
anti-parallel diode pair across the inputs (see Figures 37 and 38).
Output phase reversal is a change of polarity in the amplifier
transfer function when the input voltage exceeds the supply
voltage. The ISL70227SEH are immune to output phase reversal,
even when the input voltage is 1V beyond the supplies.
V+
Power Dissipation
VIN
RIN
VOUT
+
RL
V-
FIGURE 37. INPUT ESD DIODE CURRENT LIMITING - UNITY GAIN
For unity gain applications (see Figure 37) where the output is
connected directly to the non-inverting input, a current limiting
resistor (RIN) will be needed under the following conditions to
protect the anti-parallel differential input protection diodes.
• The amplifier input is supplied from a low impedance source.
• The input voltage rate-of-rise (dV/dt) exceeds the maximum
slew rate of the amplifier (±3.6V/µs).
If the output lags far enough behind the input, the anti-parallel
input diodes can conduct. For example, if an input pulse ramps
from 0V to +10V in 1µs, then the output of the ISL70227SEH will
reach only +3.6V (slew rate = 3.6V/µs) while the input is at 10V.
The input differential voltage of 6.4V will force input ESD diodes to
conduct, dumping the input current directly into the output stage
and the load. The resulting current flow can cause permanent
damage to the ESD diodes. The ESD diodes are rated to 20mA,
and in the previous example; setting RIN to 1kΩ resistor (see
Figure 37) would limit the current to <6.4mA and provide
additional protection of up to ±20V at the input.
In applications where one or both amplifier input terminals are at
risk of exposure to high voltage, current limiting resistors may be
needed at each input terminal (see Figure 38 RIN+, RIN-) to limit
current through the power supply ESD diodes to 20mA.
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14
It is possible to exceed the +150°C maximum junction
temperatures under certain load and power supply conditions. It
is therefore important to calculate the maximum junction
temperature (TJMAX) for all applications to determine if power
supply voltages, load conditions, or package type need to be
modified to remain in the safe operating area. These parameters
are related using Equation 1:
(EQ. 1)
T JMAX = T MAX +  JA xPD MAXTOTAL
where:
• PDMAXTOTAL is the sum of the maximum power dissipation of
each amplifier in the package (PDMAX)
• PDMAX for each amplifier can be calculated using Equation 2:
V OUTMAX
PDMAX = V S  I qMAX +  V S - V OUTMAX   -----------------------R
(EQ. 2)
L
where:
• TMAX = Maximum ambient temperature
• JA = Thermal resistance of the package
• PDMAX = Maximum power dissipation of one amplifier
• VS = Total supply voltage
• IqMAX = Maximum quiescent supply current of one amplifier
• VOUTMAX = Maximum output voltage swing of the application
• RL = Load resistance
FN7958.3
July 18, 2014
ISL70227SEH
Package Characteristics
Weight of Packaged Device
0. 4029 grams (Typical)
TOP METALLIZATION
Type: AlCu (99.5%/0.5%)
Thickness: 30kÅ
BACKSIDE FINISH
Lid Characteristics
Silicon
Finish: Gold
Case Isolation to Any Lead: 20 x 109 Ω (min)
Die Characteristics
Die Dimensions
1565µm x 2125µm (62mils x 84mils)
Thickness: 355µm ± 25µm (14 mils ± 1 mil)
PROCESS
Dielectrically Isolated Complementary Bipolar - PR40
ASSEMBLY RELATED INFORMATION
SUBSTRATE POTENTIAL
Floating
ADDITIONAL INFORMATION
Interface Materials
WORST CASE CURRENT DENSITY
GLASSIVATION
< 2 x 105 A/cm2
Type: Nitrox
Thickness: 15kÅ
Metallization Mask Layout
V+
OUT_A
-IN_A
PLACE HOLDER
OUT_B
-IN_B
+IN_A
+IN_B
V-
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15
FN7958.3
July 18, 2014
ISL70227SEH
TABLE 1. DIE LAYOUT X-Y COORDINATES
PAD NAME
PAD NUMBER
X
(µm)
Y
(µm)
dX
(µm)
dY
(µm)
BOND WIRES
PER PAD
OUT_A
11
0
1530
70
70
1
-IN_A
13
-20.5
976
70
70
1
+IN_A
14
-20.5
732
70
70
1
V-
9
0
0
70
70
1
+IN_B
16
1272.5
595.5
70
70
1
-IN_B
15
1272.5
839.5
70
70
1
OUT_B
12
1259.5
993.5
70
70
1
V+
10
1295.5
1708
70
70
1
NOTE:
6. Origin of coordinates is the centroid of pad 9.
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16
FN7958.3
July 18, 2014
ISL70227SEH
Revision History
The revision history provided is for informational purposes only and is believed to be accurate, but not warranted. Please go to the web to make sure that
you have the latest revision.
DATE
REVISION
July 18, 2014
FN7958.3
Updated “Radiation tolerance” on page 1 from:
“SEL/SEB LETTH 86MeV•cm2/mg
High dose rate 100krad(Si)
Low dose rate 100krad(Si)*”
to:
“High Dose Rate100krad(Si)
Low Dose Rate100krad(Si)*
SEL/SEB LETTH (VS = ±18V)86.4MeV/mg/cm2
SEL Immune (SOI Process)”
Updated Odering Information on page 2 as follows:
- Headings
- Notes (Removed MSL note as it is not applicable to Hermetic packages and added SMD note)
Replaced Figures 18 and 19.
Updated About Intersil verbiage.
CHANGE
February 22, 2013
FN7958.2
Corrected ordering number on page 2 for ISL70227SEHVF from 5962R1222301VXA to 5962R1222301VXC.
August 24, 2012
FN7958.1
Initial release.
About Intersil
Intersil Corporation is a leading provider of innovative power management and precision analog solutions. The company's products
address some of the largest markets within the industrial and infrastructure, mobile computing and high-end consumer markets.
For the most updated datasheet, application notes, related documentation and related parts, please see the respective product
information page found at www.intersil.com.
You may report errors or suggestions for improving this datasheet by visiting www.intersil.com/ask.
Reliability reports are also available from our website at www.intersil.com/support
For additional products, see www.intersil.com/en/products.html
Intersil products are manufactured, assembled and tested utilizing ISO9001 quality systems as noted
in the quality certifications found at www.intersil.com/en/support/qualandreliability.html
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time
without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be
accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third
parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
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17
FN7958.3
July 18, 2014
ISL70227SEH
Ceramic Metal Seal Flatpack Packages (Flatpack)
K10.A MIL-STD-1835 CDFP3-F10 (F-4A, CONFIGURATION B)
10 LEAD CERAMIC METAL SEAL FLATPACK PACKAGE
e
A
A
-A-
INCHES
D
-BPIN NO. 1
ID AREA
b
E1
S1
0.004 M H A - B S D S
Q
0.036 M H A - B S D S
C
E
-D-
A
-C-
-HE2
L
E3
SEATING AND
BASE PLANE
c1
L
E3
(c)
b1
M
M
(b)
SECTION A-A
MIN
MILLIMETERS
MAX
MIN
MAX
NOTES
A
0.045
0.115
1.14
2.92
-
b
0.015
0.022
0.38
0.56
-
b1
0.015
0.019
0.38
0.48
-
c
0.004
0.009
0.10
0.23
-
c1
0.004
0.006
0.10
0.15
-
D
-
0.290
-
7.37
3
E
0.240
0.260
6.10
6.60
-
E1
-
0.280
-
7.11
3
E2
0.125
-
3.18
-
-
E3
0.030
-
0.76
-
7
2
e
LEAD FINISH
BASE
METAL
SYMBOL
0.050 BSC
1.27 BSC
-
k
0.008
0.015
0.20
0.38
L
0.250
0.370
6.35
9.40
-
Q
0.026
0.045
0.66
1.14
8
S1
0.005
-
0.13
-
6
M
-
0.0015
-
0.04
-
N
10
10
Rev. 0 3/07
NOTES:
1. Index area: A notch or a pin one identification mark shall be located adjacent to pin one and shall be located within the shaded
area shown. The manufacturer’s identification shall not be used
as a pin one identification mark. Alternately, a tab (dimension k)
may be used to identify pin one.
2. If a pin one identification mark is used in addition to a tab, the limits of dimension k do not apply.
3. This dimension allows for off-center lid, meniscus, and glass
overrun.
4. Dimensions b1 and c1 apply to lead base metal only. Dimension
M applies to lead plating and finish thickness. The maximum limits of lead dimensions b and c or M shall be measured at the centroid of the finished lead surfaces, when solder dip or tin plate
lead finish is applied.
5. N is the maximum number of terminal positions.
6. Measure dimension S1 at all four corners.
7. For bottom-brazed lead packages, no organic or polymeric materials shall be molded to the bottom of the package to cover the
leads.
8. Dimension Q shall be measured at the point of exit (beyond the
meniscus) of the lead from the body. Dimension Q minimum
shall be reduced by 0.0015 inch (0.038mm) maximum when solder dip lead finish is applied.
9. Dimensioning and tolerancing per ANSI Y14.5M - 1982.
10. Controlling dimension: INCH.
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18
FN7958.3
July 18, 2014
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