SR502 SERIES_I13

SR502 thru SR520
Taiwan Semiconductor
CREAT BY ART
Schottky Barrier Rectifier
FEATURES
- Low forward voltage drop
- Low power loss, high efficiency
- Guardring for overvoltage protection
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: DO-201AD
DO-201AD
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test,
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Weight: 1.1 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)
PARAMETER
SYMBOL
SR
SR
SR
SR
SR
SR
SR
SR
SR
502
503
504
505
506
509
510
515
520
UNIT
Maximum repetitive peak reverse voltage
VRRM
20
30
40
50
60
90
100
150
200
V
Maximum RMS voltage
VRMS
14
21
28
35
42
63
70
105
140
V
Maximum DC blocking voltage
VDC
20
30
40
50
60
90
100
150
200
V
Maximum average forward rectified current
IF(AV)
5
A
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
IFSM
120
A
Maximum instantaneous forward voltage (Note 1)
@5A
Maximum reverse current @ rated VR
TJ=25 ℃
TJ=100℃
TJ=125 ℃
VF
0.55
0.70
0.85
0.5
IR
15
10
-
-
5
dV/dt
10000
Typical thermal resistance
RθJC
RθJA
6
35
Storage temperature range
TJ
TSTG
- 55 to +125
V
0.1
Voltage rate of change (Rated VR)
Operating junction temperature range
1.05
mA
1
V/μs
O
- 55 to +150
- 55 to +150
C/W
O
C
O
C
Note 1: Pulse test with PW=300 μs, 1% duty cycle
Document Number: D1308008
Version: I13
SR502 thru SR520
Taiwan Semiconductor
CREAT BY ART
ORDERING INFORMATION
PART NO.
AEC-Q101
PACKING CODE
GREEN COMPOUND
QUALIFIED
PACKING
DO-201AD
500 / Ammo box
DO-201AD
1,250 / 13" Paper reel
DO-201AD
500 / Bulk packing
DO-201AD
Forming
CODE
A0
SR5xx
(Note 1)
PACKAGE
R0
Prefix "H"
Suffix "G"
B0
X0
Note 1: "xx" defines voltage from 20V (SR502) to 200V (SR520)
EXAMPLE
PREFERRED P/N
PART NO.
SR506 A0
SR506
SR506 A0G
SR506
SR506HA0
AEC-Q101
GREEN COMPOUND
PACKING CODE
QUALIFIED
CODE
DESCRIPTION
A0
A0
H
SR506
G
Green compound
A0
AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA=25℃ unless otherwise noted)
6
SR505-SR520
5
4
SR502-SR504
3
2
RESISTIVE OF
INDUCTIVE LOAD
1
0
0
50
100
150
FIG. 2- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
PEAK FORWARD SURGE CURRENT (A)
AVERAGE FORWARD CURRENT (A)
FIG.1- MAXIMUM FORWARD CURRENT DERATING
CURVE
300
250
8.3ms Single Half Sine Wave
JEDEC Method
200
150
100
50
0
1
10
100
NUMBER OF CYCLES AT 60 Hz
LEAD TEMPERATURE (oC)
FIG. 4- TYPICAL REVERSE CHARACTERISTICS
FIG. 3- TYPICAL FORWARD CHARACTERISTICS
100
SR502-SR504
10
SR505-SR506
SR515-SR520
1
SR509-SR510
Pulse Width=300μs
1% Duty Cycle
0.1
0.2
0.3
0.4
0.5
0.6
0.7
FORWARD VOLTAGE (V)
0.8
0.9
INSTANTANEOUS REVERSE CURRENT. (mA)
INSTANTANEOUS FORWARD CURRENT (A)
100
SR502-504
SR505-520
10
TJ=125℃
1
TJ=75℃
0.1
0.01
TJ=25℃
0.001
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE.(%)
Document Number: D1308008
Version: I13
SR502 thru SR520
Taiwan Semiconductor
CREAT BY ART
FIG. 6- TYPICAL TRANSIENT THERMAL
CHARACTERISTICS
FIG. 5- TYPICAL JUNCTION CAPACITANCE
100
SR502-SR504
TRANSIENT THERMAL
IMPEDANCE (℃/W)
JUNCTION CAPACITANCE (pF)
1000
10
100
SR505-SR506
SR509-SR520
f=1.0MHz
Vslg=50mVp-p
0.1
10
0.1
1
1
10
0.01
100
0.1
1
10
100
T, PILSE DURATION. (sec)
REVERSE VOLTAGE (V)
PACKAGE OUTLINE DIMENSIONS
DIM.
Unit (mm)
Unit (inch)
Min
Max
Min
Max
A
5.00
5.60
0.197
0.220
B
1.20
1.30
0.048
0.052
C
25.40
-
1.000
-
D
8.50
9.50
0.335
0.375
E
25.40
-
1.000
-
MARKING DIAGRAM
P/N =
Specific Device Code
G=
Green Compound
YWW = Date Code
F=
Document Number: D1308008
Factory Code
Version: I13
SR502 thru SR520
Taiwan Semiconductor
CREAT BY ART
Notice
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assumes no responsibility or liability for any errors inaccuracies.
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Document Number: D1308008
Version: I13