Data Sheet

BC847BPN
45 V, 100 mA NPN/PNP general-purpose transistor
Rev. 04 — 18 February 2009
Product data sheet
1. Product profile
1.1 General description
NPN/PNP general-purpose transistor pair in a very small SOT363 (SC-88)
Surface-Mounted Device (SMD) plastic package.
1.2 Features
n
n
n
n
n
Low collector capacitance
Low collector-emitter saturation voltage
Closely matched current gain
Reduces number of components and board space
No mutual interference between the transistors
1.3 Applications
n General-purpose switching and amplification
1.4 Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Per transistor; for the PNP transistor with negative polarity
VCEO
collector-emitter voltage
IC
collector current
hFE
DC current gain
open base
VCE = 5 V; IC = 2 mA
-
-
45
V
-
-
100
mA
200
-
450
2. Pinning information
Table 2.
Pinning
Pin
Description
1
emitter TR1
2
base TR1
3
collector TR2
4
emitter TR2
5
base TR2
6
collector TR1
Simplified outline
6
5
4
Graphic symbol
6
5
4
TR2
TR1
1
2
3
1
2
sym019
3
BC847BPN
NXP Semiconductors
45 V, 100 mA NPN/PNP general-purpose transistor
3. Ordering information
Table 3.
Ordering information
Type number
BC847BPN
Package
Name
Description
Version
SC-88
plastic surface-mounted package; 6 leads
SOT363
4. Marking
Table 4.
Marking codes
Type number
Marking code[1]
BC847BPN
13*
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Per transistor; for the PNP transistor with negative polarity
VCBO
collector-base voltage
open emitter
-
50
V
VCEO
collector-emitter voltage
open base
-
45
V
VEBO
emitter-base voltage
open collector
IC
collector current
ICM
peak collector current
IBM
Ptot
-
5
V
-
100
mA
single pulse;
tp ≤ 1 ms
-
200
mA
peak base current
single pulse;
tp ≤ 1 ms
-
200
mA
total power dissipation
Tamb ≤ 25 °C
[1]
-
220
mW
[2]
-
250
mW
[1]
-
300
mW
[2]
-
400
mW
Per device
total power dissipation
Ptot
Tamb ≤ 25 °C
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
−65
+150
°C
Tstg
storage temperature
−65
+150
°C
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
BC847BPN_4
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 04 — 18 February 2009
2 of 14
BC847BPN
NXP Semiconductors
45 V, 100 mA NPN/PNP general-purpose transistor
006aab419
500
Ptot
(mW)
(1)
400
(2)
300
200
100
0
−75
−25
25
75
125
175
Tamb (°C)
(1) FR4 PCB, mounting pad for collector 1 cm2
(2) FR4 PCB, standard footprint
Fig 1.
Per device: Power derating curves SOT363 (SC-88)
6. Thermal characteristics
Table 6.
Symbol
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
[1]
-
-
568
K/W
[2]
-
-
500
K/W
-
-
230
K/W
[1]
-
-
416
K/W
[2]
-
-
313
K/W
Per transistor
Rth(j-a)
Rth(j-sp)
thermal resistance from
junction to ambient
in free air
thermal resistance from
junction to solder point
Per device
Rth(j-a)
thermal resistance from
junction to ambient
in free air
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
BC847BPN_4
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 04 — 18 February 2009
3 of 14
BC847BPN
NXP Semiconductors
45 V, 100 mA NPN/PNP general-purpose transistor
006aab420
103
Zth(j-a)
(K/W)
δ=1
0.75
0.50
0.33
102
0.20
0.10
0.05
0.02
10
0.01
0
1
10−5
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
FR4 PCB, standard footprint
Fig 2.
Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
006aab421
103
Zth(j-a)
(K/W)
δ=1
0.75
0.50
0.33
102
0.20
0.10
0.05
0.02
10
0.01
0
1
10−5
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
FR4 PCB, mounting pad for collector 1 cm2
Fig 3.
Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
BC847BPN_4
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 04 — 18 February 2009
4 of 14
BC847BPN
NXP Semiconductors
45 V, 100 mA NPN/PNP general-purpose transistor
7. Characteristics
Table 7.
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
collector-base cut-off VCB = 30 V; IE = 0 A
current
VCB = 30 V; IE = 0 A;
Tj = 150 °C
-
-
15
nA
-
-
5
µA
IEBO
emitter-base cut-off
current
VEB = 5 V; IC = 0 A
-
-
100
nA
hFE
DC current gain
VCE = 5 V; IC = 2 mA
200
-
450
VCEsat
collector-emitter
saturation voltage
IC = 10 mA; IB = 0.5 mA
-
-
100
mV
-
-
300
mV
VBEsat
base-emitter
saturation voltage
IC = 10 mA; IB = 0.5 mA
-
755
-
mV
VBE
base-emitter voltage IC = 2 mA; VCE = 5 V
TR1 (NPN)
580
655
700
mV
TR2 (PNP)
600
655
750
mV
-
-
1.5
pF
-
-
2.2
pF
-
11
-
pF
Per transistor; for the PNP transistor with negative polarity
ICBO
Cc
IC = 100 mA; IB = 5 mA
collector capacitance IE = ie = 0 A; VCB = 10 V;
f = 1 MHz
TR1 (NPN)
TR2 (PNP)
Ce
emitter capacitance
IC = ic = 0 A; VEB = 0.5 V;
f = 1 MHz
TR1 (NPN)
TR2 (PNP)
fT
[1]
transition frequency
IC = 10 mA; VCE = 5 V;
f = 100 MHz
-
10
-
pF
100
-
-
MHz
Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
BC847BPN_4
Product data sheet
[1]
© NXP B.V. 2009. All rights reserved.
Rev. 04 — 18 February 2009
5 of 14
BC847BPN
NXP Semiconductors
45 V, 100 mA NPN/PNP general-purpose transistor
mgt727
600
hFE
IB (mA) = 4.0
3.6
3.2
2.8
2.4
2.0
IC
(A)
(1)
500
006aab422
0.20
0.15
1.6
400
1.2
(2)
0.8
300
0.10
0.4
200
0.05
(3)
100
0
10−1
1
102
10
0
103
0
1
2
3
4
5
VCE (V)
I C (mA)
Tamb = 25 °C
VCE = 5 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 4.
TR1 (NPN): DC current gain as a function of
collector current; typical values
Fig 5.
mgt728
1200
VBE
(mV)
1000
TR1 (NPN): Collector current as a function of
collector-emitter voltage; typical values
006aab423
1.2
VBEsat
(V)
1.0
(1)
(1)
800
0.8
(2)
(2)
600
0.6
(3)
(3)
400
0.4
200
0
10−2
10−1
1
10
0.2
10−1
102
103
I C (mA)
1
VCE = 5 V
IC/IB = 20
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
(3) Tamb = 150 °C
TR1 (NPN): Base-emitter voltage as a function
of collector current; typical values
Fig 7.
103
TR1 (NPN): Base-emitter saturation voltage as
a function of collector current; typical values
BC847BPN_4
Product data sheet
102
IC (mA)
(1) Tamb = −55 °C
Fig 6.
10
© NXP B.V. 2009. All rights reserved.
Rev. 04 — 18 February 2009
6 of 14
BC847BPN
NXP Semiconductors
45 V, 100 mA NPN/PNP general-purpose transistor
mgt729
104
VCEsat
(mV)
006aab424
109
fT
(Hz)
103
108
102
(1)
(3) (2)
10
10−1
1
10
102
103
107
10−1
1
102
10
IC (mA)
I C (mA)
VCE = 5 V; f = 1 MHz; Tamb = 25 °C
IC/IB = 20
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 8.
TR1 (NPN): Collector-emitter saturation
voltage as a function of collector current;
typical values
Fig 9.
TR1 (NPN): Transition frequency as a function
of collector current; typical values
BC847BPN_4
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 04 — 18 February 2009
7 of 14
BC847BPN
NXP Semiconductors
45 V, 100 mA NPN/PNP general-purpose transistor
006aab425
600
IB (mA) = −3.5
IC
(A)
(1)
hFE
006aab426
−0.20
−0.15
−3.15
−2.8
−2.45
−2.1
−1.75
−1.4
400
−1.05
−0.7
(2)
−0.10
−0.35
200
(3)
−0.05
0
−10−1
−1
−10
−102
−103
0
0
−1
−2
−3
IC (mA)
VCE = −5 V
−4
−5
VCE (V)
Tamb = 25 °C
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 10. TR2 (PNP): DC current gain as a function of
collector current; typical values
mld700
−1200
Fig 11. TR2 (PNP): Collector current as a function of
collector-emitter voltage; typical values
VBE
mV
−1200
VBEsat
(mV)
−1000
−1000
mld702
(1)
(1)
−800
(2)
−800
(2)
−600
(3)
−600
(3)
−400
−200
−10−2
−10−1
−1
−400
−10
−102
−103
IC (mA)
VCE = −5 V
−200
−10−1
−1
−102
IC (mA)
−103
IC/IB = 20
(1) Tamb = −55 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
(3) Tamb = 150 °C
Fig 12. TR2 (PNP): Base-emitter voltage as a function
of collector current; typical values
Fig 13. TR2 (PNP): Base-emitter saturation voltage as
a function of collector current; typical values
BC847BPN_4
Product data sheet
−10
© NXP B.V. 2009. All rights reserved.
Rev. 04 — 18 February 2009
8 of 14
BC847BPN
NXP Semiconductors
45 V, 100 mA NPN/PNP general-purpose transistor
mld701
−104
VCEsat
(mV)
006aab427
109
fT
(Hz)
−103
108
(1)
−102
(2)
(3)
−10
−10−1
−1
−10
−102
IC (mA)
−103
107
−10−1
−1
−10
−102
IC (mA)
VCE = −5 V; f = 1 MHz; Tamb = 25 °C
IC/IB = 20
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 14. TR2 (PNP): Collector-emitter saturation
voltage as a function of collector current;
typical values
Fig 15. TR2 (PNP): Transition frequency as a function
of collector current; typical values
BC847BPN_4
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 04 — 18 February 2009
9 of 14
BC847BPN
NXP Semiconductors
45 V, 100 mA NPN/PNP general-purpose transistor
8. Package outline
2.2
1.8
6
2.2 1.35
2.0 1.15
1.1
0.8
5
4
2
3
0.45
0.15
pin 1
index
1
0.3
0.2
0.65
0.25
0.10
1.3
Dimensions in mm
06-03-16
Fig 16. Package outline SOT363 (SC-88)
9. Packing information
Table 8.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
BC847BPN
Package Description
SOT363
3000
10000
4 mm pitch, 8 mm tape and reel; T1
[2]
-115
-135
4 mm pitch, 8 mm tape and reel; T2
[3]
-125
-165
[1]
For further information and the availability of packing methods, see Section 13.
[2]
T1: normal taping
[3]
T2: reverse taping
BC847BPN_4
Product data sheet
Packing quantity
© NXP B.V. 2009. All rights reserved.
Rev. 04 — 18 February 2009
10 of 14
BC847BPN
NXP Semiconductors
45 V, 100 mA NPN/PNP general-purpose transistor
10. Soldering
2.65
solder lands
2.35 1.5
0.4 (2×)
0.6 0.5
(4×) (4×)
solder resist
solder paste
0.5
(4×)
0.6
(2×)
occupied area
0.6
(4×)
Dimensions in mm
1.8
sot363_fr
Fig 17. Reflow soldering footprint SOT363 (SC-88)
1.5
solder lands
0.3 2.5
4.5
solder resist
occupied area
1.5
Dimensions in mm
1.3
1.3
preferred transport
direction during soldering
2.45
5.3
sot363_fw
Fig 18. Wave soldering footprint SOT363 (SC-88)
BC847BPN_4
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 04 — 18 February 2009
11 of 14
BC847BPN
NXP Semiconductors
45 V, 100 mA NPN/PNP general-purpose transistor
11. Revision history
Table 9.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BC847BPN_4
20090218
Product data sheet
-
BC847BPN_3
Modifications:
•
The format of this data sheet has been redesigned to comply with the new identity guidelines
of NXP Semiconductors.
•
•
•
•
•
•
Legal texts have been adapted to the new company name where appropriate.
Section 4 “Marking”: updated
Section 7 “Characteristics”: enhanced
Section 9 “Packing information”: added
Section 10 “Soldering”: added
Section 12 “Legal information”: updated
BC847BPN_3
20011026
Product specification
-
BC847BPN_2
BC847BPN_2
19990426
Preliminary specification
-
BC847BPN_1
BC847BPN_1
19970709
Preliminary specification
-
-
BC847BPN_4
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 04 — 18 February 2009
12 of 14
BC847BPN
NXP Semiconductors
45 V, 100 mA NPN/PNP general-purpose transistor
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
12.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
BC847BPN_4
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 04 — 18 February 2009
13 of 14
BC847BPN
NXP Semiconductors
45 V, 100 mA NPN/PNP general-purpose transistor
14. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
11
12
12.1
12.2
12.3
12.4
13
14
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 1
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10
Packing information. . . . . . . . . . . . . . . . . . . . . 10
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12
Legal information. . . . . . . . . . . . . . . . . . . . . . . 13
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Contact information. . . . . . . . . . . . . . . . . . . . . 13
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 18 February 2009
Document identifier: BC847BPN_4
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