BCV61 NPN general-purpose double transistors Rev. 04 — 18 December 2009 Product data sheet 1. Product profile 1.1 General description NPN general-purpose double transistors in a small SOT143B Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package BCV61 PNP complement NXP JEITA SOT143B - BCV62 BCV61A BCV62A BCV61B BCV62B BCV61C BCV62C 1.2 Features Low current (max. 100 mA) Low voltage (max. 30 V) Matched pairs 1.3 Applications Applications with working point independent of temperature Current mirrors 2. Pinning information Table 2. Pinning Pin Description 1 collector TR2; base TR1 and TR2 2 collector TR1 3 emitter TR1 4 emitter TR2 Simplified outline 4 3 Graphic symbol 4 TR2 1 3 TR1 2 1 2 006aaa842 BCV61 NXP Semiconductors NPN general-purpose double transistors 3. Ordering information Table 3. Ordering information Type number BCV61 Package Name Description Version - plastic surface-mounted package; 4 leads SOT143B BCV61A BCV61B BCV61C 4. Marking Table 4. Marking codes Marking code[1] Type number BCV61 1M* BCV61A 1J* BCV61B 1K* BCV61C 1L* [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per transistor VCBO collector-base voltage open emitter - 30 V VCEO collector-emitter voltage open base - 30 V VEBS emitter-base voltage VCE = 0 V - 6 V IC collector current - 100 mA ICM peak collector current - 200 mA IBM peak base current - 200 mA - 250 mW Per device Ptot total power dissipation Tamb ≤ 25 °C Tj junction temperature - 150 °C Tamb ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C [1] Device mounted on an FR4 Printed-Circuit Board (PCB). BCV61_4 Product data sheet [1] © NXP B.V. 2009. All rights reserved. Rev. 04 — 18 December 2009 2 of 13 BCV61 NXP Semiconductors NPN general-purpose double transistors 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Rth(j-a) [1] Conditions Min Typ Max Unit - - 500 K/W Conditions Min Typ Max Unit VCB = 30 V; IE = 0 A - - 15 nA VCB = 30 V; IE = 0 A; Tj = 150 °C - - 5 μA nA thermal resistance from junction in free air to ambient [1] Device mounted on an FR4 PCB. 7. Characteristics Table 7. Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Transistor TR1 ICBO collector-base cut-off current IEBO emitter-base cut-off current VEB = 5 V; IC = 0 A - - 100 hFE DC current gain VCE = 5 V; IC = 100 μA 100 - - VCE = 5 V; IC = 2 mA 110 - 800 IC = 10 mA; IB = 0.5 mA - 90 250 mV IC = 100 mA; IB = 5 mA - 200 600 mV VCEsat VBEsat VBE collector-emitter saturation voltage base-emitter saturation voltage base-emitter voltage IC = 10 mA; IB = 0.5 mA [1] - 700 - mV IC = 100 mA; IB = 5 mA [1] - 900 - mV IC = 2 mA; VCE = 5 V [2] 580 660 700 mV IC = 10 mA; VCE = 5 V [2] - - 770 mV fT transition frequency VCE = 5 V; IC = 10 mA; f = 100 MHz 100 - - MHz Cc collector capacitance VCB = 10 V; IE = ie = 0 A; f = 1 MHz - 2.5 - pF NF noise figure VCE = 5 V; IC = 200 μA; RS = 2 kΩ; f = 1 kHz; B = 200 Hz - - 10 dB BCV61_4 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 04 — 18 December 2009 3 of 13 BCV61 NXP Semiconductors NPN general-purpose double transistors Table 7. Characteristics …continued Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit VCB = 0 V; IE = −250 mA - - −1.8 V VCB = 0 V; IE = −10 μA −400 - - mV BCV61 110 - 800 BCV61A 110 - 220 BCV61B 200 - 450 BCV61C 420 - 800 Transistor TR2 VEBS emitter-base voltage DC current gain hFE VCE = 5 V; IC = 2 mA Transistors TR1 and TR2 IC1/IE2 IE2 [1] current matching emitter current 2 IE2 = −0.5 mA; VCE1 = 5 V Tamb ≤ 25 °C 0.7 - 1.3 Tamb ≤ 150 °C 0.7 - 1.3 - - −5 VCE1 = 5 V mA VBEsat decreases by about 1.7 mV/K with increasing temperature. [2] VBE decreases by about 2 mV/K with increasing temperature. [3] Device, without emitter resistors, mounted on an FR4 PCB. BCV61_4 Product data sheet [3] © NXP B.V. 2009. All rights reserved. Rev. 04 — 18 December 2009 4 of 13 BCV61 NXP Semiconductors NPN general-purpose double transistors mgt723 400 mgt724 1200 VBE (mV) 1000 hFE (1) 300 (1) 800 (2) (2) 200 600 (3) 400 (3) 100 200 0 10−1 1 10 102 0 10−1 103 1 10 102 I C (mA) VCE = 5 V VCE = 5 V (1) Tamb = 150 °C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −55 °C (3) Tamb = 150 °C Fig 1. BCV61A: DC current gain as a function of collector current; typical values mgt725 103 103 I C (mA) Fig 2. BCV61A: Base-emitter voltage as a function of collector current; typical values mgt726 1200 VBEsat (mV) 1000 VCEsat (mV) (1) 800 (2) 102 600 (1) (3) (2) 400 (3) 200 10 10−1 1 10 102 0 10−1 103 1 IC/IB = 20 IC/IB = 10 (1) Tamb = 150 °C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −55 °C (3) Tamb = 150 °C Fig 3. BCV61A: Collector-emitter saturation voltage as a function of collector current; typical values Fig 4. 102 103 BCV61A: Base-emitter saturation voltage as a function of collector current; typical values BCV61_4 Product data sheet 10 I C (mA) I C (mA) © NXP B.V. 2009. All rights reserved. Rev. 04 — 18 December 2009 5 of 13 BCV61 NXP Semiconductors NPN general-purpose double transistors mgt727 600 VBE (mV) 1000 hFE (1) 500 mgt728 1200 (1) 400 800 (2) (2) 300 600 200 400 (3) (3) 100 200 0 10−1 1 10 102 0 10−2 103 10−1 1 10 I C (mA) VCE = 5 V VCE = 5 V (1) Tamb = 150 °C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −55 °C (3) Tamb = 150 °C Fig 5. BCV61B: DC current gain as a function of collector current; typical values mgt729 104 Fig 6. 102 103 I C (mA) BCV61B: Base-emitter voltage as a function of collector current; typical values mgt730 1200 VBEsat (mV) 1000 VCEsat (mV) (1) 103 800 (2) 600 (3) 102 400 (1) 200 (3) (2) 10 10−1 1 10 102 0 10−1 103 1 IC/IB = 20 IC/IB = 10 (1) Tamb = 150 °C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −55 °C (3) Tamb = 150 °C Fig 7. BCV61B: Collector-emitter saturation voltage as a function of collector current; typical values Fig 8. 102 103 BCV61B: Base-emitter saturation voltage as a function of collector current; typical values BCV61_4 Product data sheet 10 I C (mA) I C (mA) © NXP B.V. 2009. All rights reserved. Rev. 04 — 18 December 2009 6 of 13 BCV61 NXP Semiconductors NPN general-purpose double transistors mgt731 1200 VBE (mV) 1000 hFE 1000 mgt732 1200 (1) 800 (1) 800 (2) (2) 600 400 600 (3) 400 (3) 200 200 0 10−1 1 10 102 103 0 10−2 10−1 1 10 I C (mA) VCE = 5 V VCE = 5 V (1) Tamb = 150 °C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −55 °C (3) Tamb = 150 °C Fig 9. BCV61C: DC current gain as a function of collector current; typical values mgt733 104 102 103 I C (mA) Fig 10. BCV61C: Base-emitter voltage as a function of collector current; typical values mgt734 1200 VBEsat (mV) 1000 VCEsat (mV) (1) 103 800 (2) 600 (3) 102 400 (1) 200 (3) (2) 10 10−1 1 10 102 103 0 10−1 1 I C (mA) IC/IB = 20 IC/IB = 10 (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −55 °C (3) Tamb = 150 °C 103 Fig 12. BCV61C: Base-emitter saturation voltage as a function of collector current; typical values BCV61_4 Product data sheet 102 I C (mA) (1) Tamb = 150 °C Fig 11. BCV61C: Collector-emitter saturation voltage as a function of collector current; typical values 10 © NXP B.V. 2009. All rights reserved. Rev. 04 — 18 December 2009 7 of 13 BCV61 NXP Semiconductors NPN general-purpose double transistors mbk082 30 IE2 = 1 mA VCE1max (V) 20 5 mA 10 mA 10 50 mA 0 10−1 1 10 RE (Ω) 102 IC1/IE2 = 1.3 Fig 13. Maximum collector-emitter voltage as a function of emitter resistance 8. Test information A IC1 VCE1 2 TR1 1 TR2 3 IE2 = constant 4 006aaa831 Fig 14. Test circuit current matching A IC1 VCE1 2 TR1 3 RE 1 TR2 IE2 = constant 4 RE 006aab977 Fig 15. BCV61 with emitter resistors BCV61_4 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 04 — 18 December 2009 8 of 13 BCV61 NXP Semiconductors NPN general-purpose double transistors 9. Package outline 3.0 2.8 1.1 0.9 1.9 4 2.5 2.1 3 0.45 0.15 1.4 1.2 1 2 0.88 0.78 0.48 0.38 0.15 0.09 1.7 Dimensions in mm 04-11-16 Fig 16. Package outline SOT143B 10. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number BCV61 Package SOT143B Description 4 mm pitch, 8 mm tape and reel Packing quantity 3000 10000 -215 -235 BCV61A BCV61B BCV61C [1] For further information and the availability of packing methods, see Section 14. BCV61_4 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 04 — 18 December 2009 9 of 13 BCV61 NXP Semiconductors NPN general-purpose double transistors 11. Soldering 3.25 0.6 (3×) 0.5 (3×) 1.9 solder lands 0.7 0.6 (3×) (3×) solder resist 2 solder paste 3 occupied area 0.7 0.6 Dimensions in mm 0.75 0.95 0.9 1 sot143b_fr Fig 17. Reflow soldering footprint SOT143B 4.45 2.2 1.2 (3×) 1.425 (3×) solder lands solder resist 4.6 2.575 occupied area Dimensions in mm 1.425 preferred transport direction during soldering 1 1.2 sot143b_fw Fig 18. Wave soldering footprint SOT143B BCV61_4 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 04 — 18 December 2009 10 of 13 BCV61 NXP Semiconductors NPN general-purpose double transistors 12. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes BCV61_4 20091218 Product data sheet - BCV61_3 Modifications: • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • • • • • • • • • Legal texts have been adapted to the new company name where appropriate. Section 3 “Ordering information”: added Section 4 “Marking”: updated Figure 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11 and 12: added Section 8 “Test information”: added Figure 16: superseded by minimized package outline drawing Section 10 “Packing information”: added Section 11 “Soldering”: added Section 13 “Legal information”: updated BCV61_3 19990408 Product specification - BCV61_CNV_2 BCV61_CNV_2 19970616 Product specification - - BCV61_4 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 04 — 18 December 2009 11 of 13 BCV61 NXP Semiconductors NPN general-purpose double transistors 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 13.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 13.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BCV61_4 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 04 — 18 December 2009 12 of 13 BCV61 NXP Semiconductors NPN general-purpose double transistors 15. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 8 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Packing information . . . . . . . . . . . . . . . . . . . . . 9 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information. . . . . . . . . . . . . . . . . . . . . 12 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 18 December 2009 Document identifier: BCV61_4