Data Sheet

BCV61
NPN general-purpose double transistors
Rev. 04 — 18 December 2009
Product data sheet
1. Product profile
1.1 General description
NPN general-purpose double transistors in a small SOT143B Surface-Mounted
Device (SMD) plastic package.
Table 1.
Product overview
Type number
Package
BCV61
PNP complement
NXP
JEITA
SOT143B
-
BCV62
BCV61A
BCV62A
BCV61B
BCV62B
BCV61C
BCV62C
1.2 Features
„ Low current (max. 100 mA)
„ Low voltage (max. 30 V)
„ Matched pairs
1.3 Applications
„ Applications with working point independent of temperature
„ Current mirrors
2. Pinning information
Table 2.
Pinning
Pin
Description
1
collector TR2;
base TR1 and TR2
2
collector TR1
3
emitter TR1
4
emitter TR2
Simplified outline
4
3
Graphic symbol
4
TR2
1
3
TR1
2
1
2
006aaa842
BCV61
NXP Semiconductors
NPN general-purpose double transistors
3. Ordering information
Table 3.
Ordering information
Type number
BCV61
Package
Name
Description
Version
-
plastic surface-mounted package; 4 leads
SOT143B
BCV61A
BCV61B
BCV61C
4. Marking
Table 4.
Marking codes
Marking code[1]
Type number
BCV61
1M*
BCV61A
1J*
BCV61B
1K*
BCV61C
1L*
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Per transistor
VCBO
collector-base voltage
open emitter
-
30
V
VCEO
collector-emitter voltage
open base
-
30
V
VEBS
emitter-base voltage
VCE = 0 V
-
6
V
IC
collector current
-
100
mA
ICM
peak collector current
-
200
mA
IBM
peak base current
-
200
mA
-
250
mW
Per device
Ptot
total power dissipation
Tamb ≤ 25 °C
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
−65
+150
°C
Tstg
storage temperature
−65
+150
°C
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB).
BCV61_4
Product data sheet
[1]
© NXP B.V. 2009. All rights reserved.
Rev. 04 — 18 December 2009
2 of 13
BCV61
NXP Semiconductors
NPN general-purpose double transistors
6. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Rth(j-a)
[1]
Conditions
Min
Typ
Max
Unit
-
-
500
K/W
Conditions
Min
Typ
Max
Unit
VCB = 30 V;
IE = 0 A
-
-
15
nA
VCB = 30 V;
IE = 0 A;
Tj = 150 °C
-
-
5
μA
nA
thermal resistance from junction in free air
to ambient
[1]
Device mounted on an FR4 PCB.
7. Characteristics
Table 7.
Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Transistor TR1
ICBO
collector-base cut-off current
IEBO
emitter-base cut-off current
VEB = 5 V;
IC = 0 A
-
-
100
hFE
DC current gain
VCE = 5 V;
IC = 100 μA
100
-
-
VCE = 5 V;
IC = 2 mA
110
-
800
IC = 10 mA;
IB = 0.5 mA
-
90
250
mV
IC = 100 mA;
IB = 5 mA
-
200
600
mV
VCEsat
VBEsat
VBE
collector-emitter saturation
voltage
base-emitter saturation voltage
base-emitter voltage
IC = 10 mA;
IB = 0.5 mA
[1]
-
700
-
mV
IC = 100 mA;
IB = 5 mA
[1]
-
900
-
mV
IC = 2 mA;
VCE = 5 V
[2]
580
660
700
mV
IC = 10 mA;
VCE = 5 V
[2]
-
-
770
mV
fT
transition frequency
VCE = 5 V;
IC = 10 mA;
f = 100 MHz
100
-
-
MHz
Cc
collector capacitance
VCB = 10 V;
IE = ie = 0 A;
f = 1 MHz
-
2.5
-
pF
NF
noise figure
VCE = 5 V;
IC = 200 μA;
RS = 2 kΩ;
f = 1 kHz;
B = 200 Hz
-
-
10
dB
BCV61_4
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 04 — 18 December 2009
3 of 13
BCV61
NXP Semiconductors
NPN general-purpose double transistors
Table 7.
Characteristics …continued
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
VCB = 0 V;
IE = −250 mA
-
-
−1.8
V
VCB = 0 V;
IE = −10 μA
−400
-
-
mV
BCV61
110
-
800
BCV61A
110
-
220
BCV61B
200
-
450
BCV61C
420
-
800
Transistor TR2
VEBS
emitter-base voltage
DC current gain
hFE
VCE = 5 V;
IC = 2 mA
Transistors TR1 and TR2
IC1/IE2
IE2
[1]
current matching
emitter current 2
IE2 = −0.5 mA;
VCE1 = 5 V
Tamb ≤ 25 °C
0.7
-
1.3
Tamb ≤ 150 °C
0.7
-
1.3
-
-
−5
VCE1 = 5 V
mA
VBEsat decreases by about 1.7 mV/K with increasing temperature.
[2]
VBE decreases by about 2 mV/K with increasing temperature.
[3]
Device, without emitter resistors, mounted on an FR4 PCB.
BCV61_4
Product data sheet
[3]
© NXP B.V. 2009. All rights reserved.
Rev. 04 — 18 December 2009
4 of 13
BCV61
NXP Semiconductors
NPN general-purpose double transistors
mgt723
400
mgt724
1200
VBE
(mV)
1000
hFE
(1)
300
(1)
800
(2)
(2)
200
600
(3)
400
(3)
100
200
0
10−1
1
10
102
0
10−1
103
1
10
102
I C (mA)
VCE = 5 V
VCE = 5 V
(1) Tamb = 150 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
(3) Tamb = 150 °C
Fig 1.
BCV61A: DC current gain as a function of
collector current; typical values
mgt725
103
103
I C (mA)
Fig 2.
BCV61A: Base-emitter voltage as a function of
collector current; typical values
mgt726
1200
VBEsat
(mV)
1000
VCEsat
(mV)
(1)
800
(2)
102
600
(1)
(3)
(2)
400
(3)
200
10
10−1
1
10
102
0
10−1
103
1
IC/IB = 20
IC/IB = 10
(1) Tamb = 150 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
(3) Tamb = 150 °C
Fig 3.
BCV61A: Collector-emitter saturation voltage
as a function of collector current; typical
values
Fig 4.
102
103
BCV61A: Base-emitter saturation voltage as a
function of collector current; typical values
BCV61_4
Product data sheet
10
I C (mA)
I C (mA)
© NXP B.V. 2009. All rights reserved.
Rev. 04 — 18 December 2009
5 of 13
BCV61
NXP Semiconductors
NPN general-purpose double transistors
mgt727
600
VBE
(mV)
1000
hFE
(1)
500
mgt728
1200
(1)
400
800
(2)
(2)
300
600
200
400
(3)
(3)
100
200
0
10−1
1
10
102
0
10−2
103
10−1
1
10
I C (mA)
VCE = 5 V
VCE = 5 V
(1) Tamb = 150 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
(3) Tamb = 150 °C
Fig 5.
BCV61B: DC current gain as a function of
collector current; typical values
mgt729
104
Fig 6.
102
103
I C (mA)
BCV61B: Base-emitter voltage as a function of
collector current; typical values
mgt730
1200
VBEsat
(mV)
1000
VCEsat
(mV)
(1)
103
800
(2)
600
(3)
102
400
(1)
200
(3) (2)
10
10−1
1
10
102
0
10−1
103
1
IC/IB = 20
IC/IB = 10
(1) Tamb = 150 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
(3) Tamb = 150 °C
Fig 7.
BCV61B: Collector-emitter saturation voltage
as a function of collector current; typical
values
Fig 8.
102
103
BCV61B: Base-emitter saturation voltage as a
function of collector current; typical values
BCV61_4
Product data sheet
10
I C (mA)
I C (mA)
© NXP B.V. 2009. All rights reserved.
Rev. 04 — 18 December 2009
6 of 13
BCV61
NXP Semiconductors
NPN general-purpose double transistors
mgt731
1200
VBE
(mV)
1000
hFE
1000
mgt732
1200
(1)
800
(1)
800
(2)
(2)
600
400
600
(3)
400
(3)
200
200
0
10−1
1
10
102
103
0
10−2
10−1
1
10
I C (mA)
VCE = 5 V
VCE = 5 V
(1) Tamb = 150 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
(3) Tamb = 150 °C
Fig 9.
BCV61C: DC current gain as a function of
collector current; typical values
mgt733
104
102
103
I C (mA)
Fig 10. BCV61C: Base-emitter voltage as a function of
collector current; typical values
mgt734
1200
VBEsat
(mV)
1000
VCEsat
(mV)
(1)
103
800
(2)
600
(3)
102
400
(1)
200
(3) (2)
10
10−1
1
10
102
103
0
10−1
1
I C (mA)
IC/IB = 20
IC/IB = 10
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
(3) Tamb = 150 °C
103
Fig 12. BCV61C: Base-emitter saturation voltage as a
function of collector current; typical values
BCV61_4
Product data sheet
102
I C (mA)
(1) Tamb = 150 °C
Fig 11. BCV61C: Collector-emitter saturation voltage
as a function of collector current; typical
values
10
© NXP B.V. 2009. All rights reserved.
Rev. 04 — 18 December 2009
7 of 13
BCV61
NXP Semiconductors
NPN general-purpose double transistors
mbk082
30
IE2 =
1 mA
VCE1max
(V)
20
5 mA
10 mA
10
50 mA
0
10−1
1
10
RE (Ω)
102
IC1/IE2 = 1.3
Fig 13. Maximum collector-emitter voltage as a function of emitter resistance
8. Test information
A
IC1
VCE1
2
TR1
1
TR2
3
IE2 =
constant
4
006aaa831
Fig 14. Test circuit current matching
A
IC1
VCE1
2
TR1
3
RE
1
TR2
IE2 =
constant
4
RE
006aab977
Fig 15. BCV61 with emitter resistors
BCV61_4
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 04 — 18 December 2009
8 of 13
BCV61
NXP Semiconductors
NPN general-purpose double transistors
9. Package outline
3.0
2.8
1.1
0.9
1.9
4
2.5
2.1
3
0.45
0.15
1.4
1.2
1
2
0.88
0.78
0.48
0.38
0.15
0.09
1.7
Dimensions in mm
04-11-16
Fig 16. Package outline SOT143B
10. Packing information
Table 8.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
BCV61
Package
SOT143B
Description
4 mm pitch, 8 mm tape and reel
Packing quantity
3000
10000
-215
-235
BCV61A
BCV61B
BCV61C
[1]
For further information and the availability of packing methods, see Section 14.
BCV61_4
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 04 — 18 December 2009
9 of 13
BCV61
NXP Semiconductors
NPN general-purpose double transistors
11. Soldering
3.25
0.6
(3×)
0.5
(3×)
1.9
solder lands
0.7 0.6
(3×) (3×)
solder resist
2
solder paste
3
occupied area
0.7 0.6
Dimensions in mm
0.75
0.95
0.9
1
sot143b_fr
Fig 17. Reflow soldering footprint SOT143B
4.45
2.2
1.2
(3×)
1.425
(3×)
solder lands
solder resist
4.6
2.575
occupied area
Dimensions in mm
1.425
preferred transport direction during soldering
1
1.2
sot143b_fw
Fig 18. Wave soldering footprint SOT143B
BCV61_4
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 04 — 18 December 2009
10 of 13
BCV61
NXP Semiconductors
NPN general-purpose double transistors
12. Revision history
Table 9.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BCV61_4
20091218
Product data sheet
-
BCV61_3
Modifications:
•
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
•
•
•
•
•
•
•
•
•
Legal texts have been adapted to the new company name where appropriate.
Section 3 “Ordering information”: added
Section 4 “Marking”: updated
Figure 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11 and 12: added
Section 8 “Test information”: added
Figure 16: superseded by minimized package outline drawing
Section 10 “Packing information”: added
Section 11 “Soldering”: added
Section 13 “Legal information”: updated
BCV61_3
19990408
Product specification
-
BCV61_CNV_2
BCV61_CNV_2
19970616
Product specification
-
-
BCV61_4
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 04 — 18 December 2009
11 of 13
BCV61
NXP Semiconductors
NPN general-purpose double transistors
13. Legal information
13.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
13.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
BCV61_4
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 04 — 18 December 2009
12 of 13
BCV61
NXP Semiconductors
NPN general-purpose double transistors
15. Contents
1
1.1
1.2
1.3
2
3
4
5
6
7
8
9
10
11
12
13
13.1
13.2
13.3
13.4
14
15
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 1
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Packing information . . . . . . . . . . . . . . . . . . . . . 9
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11
Legal information. . . . . . . . . . . . . . . . . . . . . . . 12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Contact information. . . . . . . . . . . . . . . . . . . . . 12
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 18 December 2009
Document identifier: BCV61_4
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