s9737 series kmpd1081e

IMAGE SENSOR
CCD area image sensor
S9737 series
1024 × 1024 pixels, front-illuminated FFT-CCDs
S9737 series is a family of FFT-CCD area image sensors specifically designed for low-light-level detection in scientific applications. S9737 series
also features low noise and low dark current (MPP mode operation). These enable low-light-level detection and long integration time, thus
achieving a wide dynamic range.
Three different packages (ceramic DIP, metal, plate type) are provided. Metal package type (S9737-02) has a four-stage TE-cooled element built
into the same package for thermoelectric cooling. At room temperature operation, the device can be cooled down to -70 ˚C with using forced air
cooling. In addition, since both the CCD chip and TE-cooled element are hermetically sealed, no dry air is required, thus allowing easy handling.
Features
Applications
l 1024 (H) × 1024 (V) pixel format
l Pixel size: 12 × 12 µm
l 100 % fill factor
l Wide dynamic range
l Low dark current
l Low readout noise
l MPP operation
l 3 types of packages are available
l Astronomy
l Scientific measuring instrument
l Fluorescence spectrometer
l Raman spectrophotometer
l Optical and spectrophotometric analyzer
l For low-light-level detection requiring
■ General ratings
Parameter
CCD structure
Fill factor
Number of active pixels
Pixel size
Active area
Vertical clock phase
Horizontal clock phase
Output circuit
Cooling
Package
Window
S9737-01
S9737-02
Full frame transfer
100 %
1024 (H) × 1024 (V)
12 (H) × 12 (V) µm
12.288 (H) × 12.288 (V) mm
2 phase
2 phase
One-stage MOSFET source follower
Non-cooled
Four-stage TE-cooled
24-pin ceramic DIP
28-pin metal package
None (covered with tape)
AR coated Sapphire
S9737-03
Non-cooled
Plate type
None
1
CCD area image sensor
S9737 series
■ Absolute maximum ratings (Ta=25 °C)
Parameter
Operating temperature
Storage temperature
CCD cooling temperature
Output transistor drain voltage
Reset drain voltage
Test point (vertical input source)
Test point (horizontal input source)
Test point (vertical input gate)
Test point (horizontal input gate)
Summing gate voltage
Output gate voltage
Reset gate voltage
Transfer gate voltage
Vertical shift register clock voltage
Horizontal shift register clock voltage
Symbol
Topr
Tstg
VOD
VRD
VISV
VISH
VIG1V, VIG2V
VIG1H, VIG2H
VSG
VOG
VRG
VTG
VP1V, VP2V
VP1H, VP2H
Min.
-50
-50
-70
-0.5
-0.5
-0.5
-0.5
-15
-15
-15
-15
-15
-15
-15
-15
Typ.
-
Max.
+50
+70
+30
+25
+18
+18
+18
+15
+15
+15
+15
+15
+15
+15
+15
Unit
°C
°C
°C
V
V
V
V
V
V
V
V
V
V
V
V
Symbol
VOD
VRD
VOG
VSS
VISV
VISH
VIG1V, VIG2V
VIG1H, VIG2H
VP1VH, VP2VH
VP1VL, VP2VL
VP1HH, VP2HH
VP1HL, VP2HL
VSGH
VSGL
VRGH
VRGL
VTGH
VTGL
Min.
18
12
-0.5
-8
-8
0
-9
0
-9
0
-9
0
-9
0
-9
Typ.
20
13
2
0
VRD
VRD
0
0
3
-8
3
-8
3
-8
3
-8
3
-8
Max.
22
14
6
-7
6
-7
6
-7
6
-7
6
-7
Unit
V
V
V
V
V
V
V
V
■ Operating conditions (MPP mode, Ta=25 °C)
Parameter
Output transistor drain voltage
Reset drain voltage
Output gate voltage
Substrate voltage
Test point (vertical input source)
Test point (horizontal input source)
Test point (vertical input gate)
Test point (horizontal input gate)
Vertical shift register
clock voltage
Horizontal shift register
clock voltage
Summing gate voltage
Reset gate voltage
Transfer gate voltage
High
Low
High
Low
High
Low
High
Low
High
Low
V
V
V
V
V
■ Electrical characteristics (Ta=25 °C)
Parameter
Symbol
Remark
Min.
Signal output frequency
fc
Vertical shift register capacitance
CP1V, CP2V
Horizontal shift register capacitance
CP1H, CP2H
Summing gate capacitance
CSG
Reset gate capacitance
CRG
Transfer gate capacitance
CTG
0.99995
Transfer efficiency
CTE
*1
DC output level
Vout
*2
12
Output impedance
Zo
*2
Power dissipation
P
*2, *3
*1: Charge transfer efficiency per pixel, measured at half of the full well capacity.
*2: The values depend on the load resistance. (VOD=20 V, Load resistance=22 kΩ)
*3: Power dissipation of the on-chip amplifier.
2
Typ.
0.1
6000
200
5
5
50
0.99999
15
3
15
Max.
1
18
-
Unit
MHz
pF
pF
pF
pF
pF
V
kΩ
mW
CCD area image sensor
S9737 series
■Electrical and optical characteristics (Ta=25 °C, unless otherwise noted)
Parameter
Symbol
Remark
Min.
Typ.
Max.
Unit
Saturation output voltage
Vsat
Fw × Sv
V
Vertical
30
60
Full well
Fw
kecapacity
Horizontal
72
CCD node sensitivity
Sv
*4
4.5
µV/e+25 °C
100
1500
Dark current
0 °C
DS
*5
5
75
e-/pixel/s
(MPP mode)
-70 °C
0.0005
0.005
Readout noise
Nr
*6
4
18
e-rms
7
Dynamic range (Area scanning)
*
15000
Spectral response range
λ
400 to 1100
nm
Photo response non-uniformity
PRNU
*8
±10
%
Point defects
*9
0
Blemish
Cluster defects
*10
0
Column defects
*11
0
*4: VOD=20 V , Load resistance=22 kΩ
*5: Dark current nearly doubles for every 5 to 7 °C increase in temperature.
*6: -40 °C, operating frequency is 80 kHz.
*7: DR = Fw / Nr
*8: Measured at half of the full well capacity. PRNU = noise / signal × 100 [%], noise: fixed pattern noise (peak to peak)
*9: White spots > 3 % of full well at 0 °C after Ts=1 s, Black spots > 50 % reduction in response relative to adjacent pixels
*10: A group of 2 to 9 continuous point defects
*11: A group of 10 or more continuous point defects
■ Pin connections (S9737-01)
Pin No.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
Symbol
RG
RD
OS
OD
OG
SG
P2H
NC
P1H
NC
IG2H
IG1H
ISH
TG
P2V
NC
P1V
NC
NC
SS
NC
ISV
IG2V
IG1V
Description
Reset gate
Reset drain
Output source
Output transistor drain
Output gate
Summing gate
CCD horizontal register clock-2
No connection
CCD horizontal register clock-1
No connection
Test point (horizontal input gate-2)
Test point (horizontal input gate-1)
Test point (horizontal input source)
Transfer gate
CCD vertical register clock-2
No connection
CCD vertical register clock-1
No connection
No connection
Substrate (GND)
No connection
Test point (vertical input source)
Test point (vertical input gate-2)
Test point (vertical input gate-1)
Remark
Shorted to ground
Shorted to ground
Shorted to RD
Shorted to RD
Shorted to ground
Shorted to ground
3
CCD area image sensor
S9737 series
■ Pin connections (S9737-02)
Pin No.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
Symbol
PNC
SS
NC
ISV
IG2V
IG1V
RG
RD
OS
OD
OG
SG
P+
TSH1
TSC1
TSC2
P2H
P1H
IG2H
IG1H
ISH
P2V
P1V
TG
NC
NC
TSH2
Description
Remark
TE-coolerSubstrate (GND)
Test point (vertical input source)
Test point (vertical input gate-2)
Test point (vertical input gate-1)
Reset gate
Reset drain
Output transistor source
Output transistor drain
Output gate
Summing gate
TE-cooler+
Temperature sensor (hot side)
Temperature sensor (cool side)
Temperature sensor (cool side)
CCD horizontal register clock-2
CCD horizontal register clock-1
Test point (horizontal input gate-2)
Test point (horizontal input gate-1)
Test point (horizontal input source)
CCD vertical register clock-2
CCD vertical register clock-1
Transfer gate
Shorted to RD
Shorted to 0 V
Shorted to 0 V
Same timing as P2H
Shorted to 0 V
Shorted to 0 V
Shorted to RD
Same timing as P2V *12
Temperature sensor (hot side)
■ Pad connections (S9737-03)
Pad No.
Symbol
Description
1
RG
Reset gate
2
RD
Reset drain
3
OS
Output transistor source
4
OD
Output transistor grain
5
OG
Output gate
6
SG
Summing gate
7
NC
8
NC
9
P2H
CCD horizontal register clock-2
10
P1H
CCD horizontal register clock-1
11
IG2H
Test point (horizontal input gate-2)
12
IG1H
Test point (horizontal input gate-1)
13
ISH
Test point (horizontal input source)
14
P2V
CCD vertical resister clock-2
15
P1V
CCD vertical resister clock-1
16
TG
Transfer gate
17
NC
18
NC
19
NC
20
SS
Substrate (GND)
21
NC
22
ISV
Test point (vertical input source)
23
IG2V
Test point (vertical input gate-2)
24
IG1V
Test point (vertical input gate-1)
*12: TG is an isolation gate between vertical register and horizontal register.
In standard operation, the same pulse of P2V should be applied to the TG.
4
Remark
Same timing as P2V*12
S9737 series
CCD area image sensor
■ Spectral response (without window)
(Typ. Ta=25 ˚C)
50
(Typ. Ta=25 ˚C)
100
40
95
TRANSMITTANCE (%)
QUANTUM EFFICIENCY (%)
■ Spectral transmittance characteristics
of window material
30
20
AR COATED SAPPHIRE
90
85
10
0
400
500
600
700
800
900
80
400
1000 1100 1200
500
600
WAVELENGTH (nm)
700
800
900
1000 1100 1200
WAVELENGTH (nm)
KMPDB0244EA
KMPDB0106EA
■ Dimensional outlines (unit: mm)
S9737-01
S9737-02
27.0
PIN No. 1
12.288
13
20.0
12.288
1st PIN INDEX
MARK
7.0
0.46
12
13
17
16
36.0
PHOTOSENSITIVE
SURFACE
27.94
27
26
50.0
2
3
12.288
22.86 ± 0.3
23.11 ± 0.3
12.288
1.0
28
22.73 ± 0.3
2.4
R1.2
4.0
44.0
24
1.3 ± 0.3
30.48 ± 0.3
14
1.27
3.0
PIN No. 1
2.54
12
15
PINCHED
OFF TUBE
35.0
2.54
AR-COATED
SAPPHIRE WINDOW
0.635 ± 0.07
12.288
6.3 ± 0.5
26.00 ± 0.3
PHOTOSENSITIVE SURFACE
18.5 ± 0.5
S9737-03
0.625
12.288
0.635 ± 0.07
18
13
12
7
21.00 ± 0.3
50.8
19
24
1
6
5.0
47.0
KMPDA0140EB
FOUR-STAGE TE-COOLER
KMPDA0142EB
KMPDA0183EA
5
CCD area image sensor
S9737 series
■ Device structure, line output format (S9737-01)
IG1V IG2V ISV
24
23 22
SS
20
P1V
17
TG
14
P2V
15
V
......
V=1024
H=1024
1
RD
2
OS
3
......
H
......
D13
D14
D15
D16
D17
D18
D19
D20
RG
D1
D2
D3
D4
D5
D6
D7
D8
D9
D10
D11
D12
1
13 ISH
12 IG1H
4
OD
5
OG
6
SG
4 ISOLATION
4 BLANK
4 OPTICAL
BLACK
1024
SIGNAL OUT
7
9
P2H P1H
11
IG2H
4 ISOLATION 4 BLANK
KMPDC0155EA
Pixel format
Blank
4
Left ← Horizontal Direction → Right
Isolation
Effective
Isolation
4
1024
4
Optical Black
4
Optical Black
-
Blank
4
Top ← Vertical Direction → Bottom
Isolation
Effective
Isolation
4
1024
4
■ Timing chart
● Area scanning 1 (low dark current mode)
INTEGRATION PERIOD
(Shutter must be open)
READOUT PERIOD (Shutter must be closed)
Tpwv
1
2
3
P1V
4..1031
1032←1024+8 (ISOLATION)
P2V, TG
P1H
P2H, SG
RG
OS
Tovr
P2V, TG
ENLARGED VIEW
Tpwh, Tpws
P1H
P2H, SG
Tpwr
RG
OS
D1
6
D2
D3
D4
D18
D5..D12, S1..S1024, D13..D17
D19
D20
KMPDC0156EA
CCD area image sensor
Parameter
Symbol
Remark
Pulse width
Tpwv
*13
Rise and fall time
Tprv, Tpfv
Pulse width
Tpwh
P1H, P2H
Rise and fall time
Tprh, Tpfh
*13
Duty ratio
Pulse width
Tpws
SG
Rise and fall time
Tprs, Tpfs
Duty ratio
Pulse width
Tpwr
RG
Rise and fall time
Tprr, Tpfr
TG – P1H
Overlap time
Tovr
*13: Symmetrical pulses should be overlapped at 50 % of maximum amplitude.
Min.
6
200
500
10
500
10
100
5
3
P1V
P2V, TG
S9737 series
Typ.
18
5000
50
5000
50
500
6
Max.
-
Unit
µs
ns
ns
ns
%
ns
ns
%
ns
ns
µs
● Area scanning 2 (large full well mode)
INTEGRATION PERIOD
(Shutter must be open)
READOUT PERIOD (Shutter must be closed)
Tpwv
1
2
3
4..1031 1032←1024+8 (ISOLATION)
P1V
P2V, TG
P1H
P2H, SG
RG
OS
Tovr
P2V, TG
ENLARGED VIEW
Tpwh, Tpws
P1H
P2H, SG
Tpwr
RG
OS
D1
D2
D3
D4
D18
D5..D12, S1..S1024, D13..D17
Parameter
Symbol
Remark
Pulse width
Tpwv
*14
Rise and fall time
Tprv, Tpfv
Pulse width
Tpwh
P1H, P2H
Rise and fall time
Tprh, Tpfh
*14
Duty ratio
Pulse width
Tpws
SG
Rise and fall time
Tprs, Tpfs
Duty ratio
Pulse width
Tpwr
RG
Rise and fall time
Tprr, Tpfr
TG – P1H
Overlap time
Tovr
*14: Symmetrical pulses should be overlapped at 50 % of maximum amplitude.
P1V
P2V, TG
D19
Min.
6
200
500
10
500
10
100
5
3
D20
KMPDC0157EA
Typ.
18
5000
50
5000
50
500
6
Max.
-
Unit
µs
ns
ns
ns
%
ns
ns
%
ns
ns
µs
7
CCD area image sensor
S9737 series
■ Specifications of built-in TE-cooler (S9737-02)
Parameter
Internal resistance
Symbol
Rint
Maximum current *15
Imax
Maximum voltage
Vmax
Maximum heat absorption *18
Qmax
Condition
Ta=27 °C
Th *16=27 °C
∆T *17=∆Tmax
Th*16=27 °C
∆T=∆Tmax
I=Imax
Tc *19=Th *16=27 °C
I=Imax
Min.
-
Typ.
1.6
Max.
-
Unit
Ω
-
-
4.4
A
-
-
7.4
V
-
-
3.0
W
Maximum temperature at hot side
50
°C
CCD temperature
Ta=25 °C
-70
-50
°C
*15: If the current is greater than Imax, the heat absorption begins to decrease due to the Joule heat. It should be noted that
this value is not a damage threshold. To protect the thermoelectric cooler (Peltier element) and maintain stable operation,
the supply current should be less than 60 % of this maximum current.
*16: Temperature at hot side of thermoelectric cooler.
*17: ∆T=Th - Tc
*18: This is a theoretical heat absorption level that offsets the temperature difference in the TE-cooled element when the
maximum current is supplied to the unit.
*19: Temperature at cool side of thermoelectric cooler.
(Typ. Ta=25 ˚C)
V-I
CCD TEMPERATURE - I
VOLTAGE (V)
5
40
20
4
0
3
-20
2
-40
1
-60
0
0
0.5
1.0
1.5
2.0
2.5
CCD TEMPERATURE (˚C)
6
-80
3.0
CURRENT (A)
KMPDB0107EA
■ Specifications of built-in temperature sensors (S9737-02)
Parameter
Resistance at cool side
Temperature coefficient of resistance at cool side
Resistance at hot side
Temperature coefficient of resistance at hot side
(Typ. Ta=25 ˚C)
1400
RESISTANCE (Ω)
1200
1000
800
600
400
200
0
-100
-80
-60
-40
-20
0
20
40
TEMPERATURE (˚C)
KMPDB0108EA
8
Symbol
Rc
Rh
-
Condition
T=0 °C
T=0 °C
-
Min.
-
Typ.
1000
0.00375
1000
0.00385
Max.
-
Unit
Ω
Ω/Ω
Ω
Ω/Ω
CCD area image sensor
S9737 series
■ Precaution for use (electrostatic countermeasures)
● Handle these sensors with bare hands or wearing cotton gloves. In addition, wear anti-static clothing or use a wrist strap, in
order to prevent electrostatic damage due to electrical charges from friction.
● Avoid directly placing these sensors on a work-desk or work-bench that may carry an electrostatic charge.
● Provide ground lines or ground connection with the work-floor, work-desk and work-bench to allow static electricity to discharge.
● Ground the tools used to handle these sensors, such as tweezers and soldering irons.
It is not always necessary to provide all the electrostatic measures stated above. Implement these measures according to the
amount of damage that occurs.
■ Element cooling/heating temperature incline rate
Element cooling/heating temperature incline rate should be set at less than 5 K/min.
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein.
Type numbers of products listed inthe specification sheets or supplied as samples may have a suffix "(X)" which means tentative specifications or a suffix "(Z)"
which means developmental specifications. ©2014 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Cat. No. KMPD1081E04
Jan. 2014 DN
9