Data Sheet

PMP5501V; PMP5501G;
PMP5501Y
PNP/PNP matched double transistors
Rev. 03 — 28 August 2009
Product data sheet
1. Product profile
1.1 General description
PNP/PNP matched double transistors in small Surface-Mounted Device (SMD) plastic
packages. The transistors in the SOT666 and SOT363 (SC-88) packages are fully isolated
internally.
Table 1.
Product overview
Type number
Package
NXP
JEITA
PNP/PNP hFE1/hFE2
0.98 complement
NPN/NPN
complement
PMP5501V
SOT666
-
PMP5201V
PMP4501V
PMP5501G
SOT353
SC-88A
PMP5201G
PMP4501G
PMP5501Y
SOT363
SC-88
PMP5201Y
PMP4501Y
1.2 Features
n
n
n
n
Current gain matching
Base-emitter voltage matching
Common emitter configuration for SOT353 types
Application-optimized pinout
1.3 Applications
n Current mirror
n Differential amplifier
1.4 Quick reference data
Table 2.
Symbol
Quick reference data
Parameter
Conditions
Min
Typ
Max
Unit
open base
-
-
−45
V
-
-
−100
mA
200
290
450
Per transistor
VCEO
collector-emitter voltage
IC
collector current
hFE
DC current gain
VCE = −5 V;
IC = −2 mA
PMP5501V; PMP5501G; PMP5501Y
NXP Semiconductors
PNP/PNP matched double transistors
Table 2.
Quick reference data …continued
Symbol
Parameter
Conditions
hFE1/hFE2
hFE matching
VCE = −5 V;
IC = −2 mA
VBE1−VBE2
VBE matching
VCE = −5 V;
IC = −2 mA
Min
Typ
Max
[1]
0.95
1
-
[2]
-
-
2
Unit
Per device
[1]
The smaller of the two values is taken as the numerator.
[2]
The smaller of the two values is subtracted from the larger value.
mV
2. Pinning information
Table 3.
Pinning
Pin
Description
Simplified outline
Symbol
SOT666; SOT363
1
base TR1
2
base TR2
3
collector TR2
4
emitter TR2
5
emitter TR1
6
6
5
4
6
5
4
TR1
TR2
1
1
2
collector TR1
3
2
3
006aaa550
001aab555
SOT353
1
base TR1
2
emitter TR1, TR2
3
base TR2
4
collector TR2
5
collector TR1
5
4
5
4
TR1 TR2
1
2
3
1
2
3
006aaa551
3. Ordering information
Table 4.
Ordering information
Type number
Package
Name
Description
Version
PMP5501V
-
plastic surface-mounted package; 6 leads
SOT666
PMP5501G
SC-88A
plastic surface-mounted package; 5 leads
SOT353
PMP5501Y
SC-88
plastic surface-mounted package; 6 leads
SOT363
PMP5501V_G_Y_3
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 28 August 2009
2 of 14
PMP5501V; PMP5501G; PMP5501Y
NXP Semiconductors
PNP/PNP matched double transistors
4. Marking
Table 5.
Marking codes
Type number
Marking code[1]
PMP5501V
ED
PMP5501G
R4*
PMP5501Y
S6*
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Per transistor
VCBO
collector-base voltage
open emitter
-
−50
V
VCEO
collector-emitter voltage
open base
-
−45
V
VEBO
emitter-base voltage
open collector
-
−5
V
IC
collector current
-
−100
mA
ICM
peak collector current
single pulse;
tp ≤ 1 ms
-
−200
mA
Ptot
total power dissipation
Tamb ≤ 25 °C
SOT666
[1][2]
-
200
mW
SOT353
[1]
-
200
mW
SOT363
[1]
-
200
mW
SOT666
[1][2]
-
300
mW
SOT353
[1]
-
300
mW
SOT363
[1]
-
300
mW
Per device
total power dissipation
Ptot
Tamb ≤ 25 °C
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
−65
+150
°C
Tstg
storage temperature
−65
+150
°C
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2]
Reflow soldering is the only recommended soldering method.
PMP5501V_G_Y_3
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 28 August 2009
3 of 14
PMP5501V; PMP5501G; PMP5501Y
NXP Semiconductors
PNP/PNP matched double transistors
6. Thermal characteristics
Table 7.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Per transistor
Rth(j-a)
thermal resistance from
junction to ambient
in free air
SOT666
[1][2]
-
-
625
K/W
SOT353
[1]
-
-
625
K/W
SOT363
[1]
-
-
625
K/W
SOT666
[1][2]
-
-
416
K/W
SOT353
[1]
-
-
416
K/W
SOT363
[1]
-
-
416
K/W
Per device
Rth(j-a)
thermal resistance from
junction to ambient
in free air
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Reflow soldering is the only recommended soldering method.
7. Characteristics
Table 8.
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VCB = −30 V;
IE = 0 A
-
-
−15
nA
VCB = −30 V;
IE = 0 A;
Tj = 150 °C
-
-
−5
µA
nA
Per transistor
ICBO
collector-base cut-off
current
IEBO
emitter-base cut-off
current
VEB = −5 V;
IC = 0 A
-
-
−100
hFE
DC current gain
VCE = −5 V;
IC = −10 µA
-
250
-
VCE = −5 V;
IC = −2 mA
200
290
450
IC = −10 mA;
IB = −0.5 mA
-
−50
−200
mV
IC = −100 mA;
IB = −5 mA
-
−200
−400
mV
[1]
-
−760
-
mV
[1]
-
−920
-
mV
VCEsat
VBEsat
collector-emitter
saturation voltage
base-emitter saturation IC = −10 mA;
voltage
IB = −0.5 mA
IC = −100 mA;
IB = −5 mA
PMP5501V_G_Y_3
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 28 August 2009
4 of 14
NXP Semiconductors
PMP5501V; PMP5501G; PMP5501Y
PNP/PNP matched double transistors
Table 8.
Characteristics …continued
Tamb = 25 °C unless otherwise specified.
Symbol
VBE
Parameter
Conditions
Min
Typ
Max
Unit
VCE = −5 V;
IC = −2 mA
[2]
base-emitter voltage
−600
−650
−700
mV
VCE = −5 V;
IC = −10 mA
[2]
-
-
−760
mV
Cc
collector capacitance
VCB = −10 V;
IE = ie = 0 A;
f = 1 MHz
-
-
2.2
pF
Ce
emitter capacitance
VEB = −0.5 V;
IC = ic = 0 A;
f = 1 MHz
-
10
-
pF
fT
transition frequency
VCE = −5 V;
IC = −10 mA;
f = 100 MHz
100
175
-
MHz
NF
noise figure
VCE = −5 V;
IC = −0.2 mA;
RS = 2 kΩ;
f = 10 Hz to
15.7 kHz
-
1.6
-
dB
VCE = −5 V;
IC = −0.2 mA;
RS = 2 kΩ;
f = 1 kHz;
B = 200 Hz
-
3.1
-
dB
Per device
hFE matching
VCE = −5 V;
IC = −2 mA
[3]
0.95
1
-
VBE1−VBE2 VBE matching
VCE = −5 V;
IC = −2 mA
[4]
-
-
2
hFE1/hFE2
[1]
VBEsat decreases by about 1.7 mV/K with increasing temperature.
[2]
VBE decreases by about 2 mV/K with increasing temperature.
[3]
The smaller of the two values is taken as the numerator.
[4]
The smaller of the two values is subtracted from the larger value.
PMP5501V_G_Y_3
Product data sheet
mV
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 28 August 2009
5 of 14
PMP5501V; PMP5501G; PMP5501Y
NXP Semiconductors
PNP/PNP matched double transistors
006aaa540
−0.20
IB (mA) = −2.5
−2.25
−2.0
−1.75
−1.5
−1.25
IC
(A)
−0.16
−0.12
006aaa541
600
hFE
(1)
400
−1.0
(2)
−0.75
−0.08
−0.5
200
(3)
−0.25
−0.04
0
0
−2
−4
−6
0
−10−2
−8
−10
VCE (V)
Tamb = 25 °C
−10−1
−1
−10
−102
−103
IC (mA)
VCE = −5 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 1.
Collector current as a function of
collector-emitter voltage; typical values
006aaa542
−1.3
VBEsat
(V)
−1.1
Fig 2.
DC current gain as a function of collector
current; typical values
006aaa543
−10
VCEsat
(V)
−0.9
−1
(1)
−0.7
(2)
(3)
−10−1
−0.5
(1)
(2)
(3)
−0.3
−0.1
−10−1
−1
−10
−102
−103
−10−2
−10−1
−1
IC (mA)
IC/IB = 20
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(3) Tamb = −55 °C
Base-emitter saturation voltage as a function
of collector current; typical values
Fig 4.
−103
Collector-emitter saturation voltage as a
function of collector current; typical values
PMP5501V_G_Y_3
Product data sheet
−102
IC (mA)
(1) Tamb = −55 °C
Fig 3.
−10
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 28 August 2009
6 of 14
PMP5501V; PMP5501G; PMP5501Y
NXP Semiconductors
PNP/PNP matched double transistors
006aaa544
−1
VBE
(V)
006aaa545
103
fT
(MHz)
−0.8
102
−0.6
−0.4
−10−1
−1
−10
−102
10
−103
−1
IC (mA)
VCE = −5 V; Tamb = 25 °C
Fig 5.
−102
−10
IC (mA)
VCE = −5 V; Tamb = 25 °C
Base-emitter voltage as a function of collector
current; typical values
Fig 6.
006aaa546
8
Transition frequency as a function of collector
current; typical values
006aaa547
15
Ce
(pF)
13
Cc
(pF)
6
11
4
9
2
7
0
0
−2
−4
−6
5
−8
−10
VCB (V)
0
−6
f = 1 MHz; Tamb = 25 °C
Collector capacitance as a function of
collector-base voltage; typical values
Fig 8.
Emitter capacitance as a function of
emitter-base voltage; typical values
PMP5501V_G_Y_3
Product data sheet
−4
VEB (V)
f = 1 MHz; Tamb = 25 °C
Fig 7.
−2
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 28 August 2009
7 of 14
PMP5501V; PMP5501G; PMP5501Y
NXP Semiconductors
PNP/PNP matched double transistors
8. Application information
V−
VCC
OUT2
OUT1
IN1
R1
TR1
IN2
TR2
l out
TR1
TR2
V+
006aaa524
Fig 9.
006aaa526
Current mirror
Fig 10. Differential amplifier
9. Package outline
1.7
1.5
6
2.2
1.8
0.6
0.5
5
1.1
0.8
5
4
0.45
0.15
4
0.3
0.1
1.7
1.5
2.2 1.35
2.0 1.15
1.3
1.1
pin 1 index
1
2
1
3
0.18
0.08
0.27
0.17
0.5
3
0.25
0.10
0.3
0.2
0.65
1.3
1
Dimensions in mm
2
Dimensions in mm
04-11-08
Fig 11. Package outline SOT666
04-11-16
Fig 12. Package outline SOT353 (SC-88A)
2.2
1.8
6
2.2 1.35
2.0 1.15
1.1
0.8
5
4
2
3
0.45
0.15
pin 1
index
1
0.3
0.2
0.65
0.25
0.10
1.3
Dimensions in mm
06-03-16
Fig 13. Package outline SOT363 (SC-88)
PMP5501V_G_Y_3
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 28 August 2009
8 of 14
PMP5501V; PMP5501G; PMP5501Y
NXP Semiconductors
PNP/PNP matched double transistors
10. Packing information
Table 9.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
Package Description
Packing quantity
3000 4000 8000 10000
PMP5501V
SOT666
PMP5501G
SOT353
PMP5501Y
SOT363
2 mm pitch, 8 mm tape and reel
-
-
-315
-
4 mm pitch, 8 mm tape and reel
-
-115
-
-
4 mm pitch, 8 mm tape and reel
-115
-
-
-135
4 mm pitch, 8 mm tape and reel; T1
[2]
-115
-
-
-135
4 mm pitch, 8 mm tape and reel; T2
[3]
-125
-
-
-165
[1]
For further information and the availability of packing methods, see Section 14.
[2]
T1: normal taping
[3]
T2: reverse taping
11. Soldering
2.75
2.45
2.1
1.6
solder lands
0.4
(6×) 0.25
(2×)
0.538
2
1.7 1.075
0.3
(2×)
0.55
(2×)
placement area
solder paste
occupied area
0.325 0.375
(4×) (4×)
Dimensions in mm
1.7
0.45
(4×)
0.6
(2×)
0.5
(4×)
0.65
(2×)
sot666_fr
Reflow soldering is the only recommended soldering method.
Fig 14. Reflow soldering footprint SOT666
PMP5501V_G_Y_3
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 28 August 2009
9 of 14
PMP5501V; PMP5501G; PMP5501Y
NXP Semiconductors
PNP/PNP matched double transistors
2.65
0.60
(1×)
2.35
0.40 0.90 2.10
solder lands
0.50
(4×)
solder paste
solder resist
0.50
(4×)
occupied area
1.20
2.40
msa366
Dimensions in mm
Fig 15. Reflow soldering footprint SOT353 (SC-88A)
4.9
2.25
1.5
solder lands
1
solder resist
0.85
2.5
4.5
occupied area
0.85
Dimensions in mm
1
1.5
preferred transport
direction during soldering
1.3
1.3
1.225
1.225
sot353_fw
Dimensions in mm
Fig 16. Wave soldering footprint SOT353 (SC-88A)
PMP5501V_G_Y_3
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 28 August 2009
10 of 14
NXP Semiconductors
PMP5501V; PMP5501G; PMP5501Y
PNP/PNP matched double transistors
2.65
solder lands
2.35 1.5
0.4 (2×)
0.6 0.5
(4×) (4×)
solder resist
solder paste
0.5
(4×)
0.6
(2×)
occupied area
0.6
(4×)
Dimensions in mm
1.8
sot363_fr
Fig 17. Reflow soldering footprint SOT363 (SC-88)
1.5
solder lands
0.3 2.5
4.5
solder resist
occupied area
1.5
Dimensions in mm
1.3
1.3
preferred transport
direction during soldering
2.45
5.3
sot363_fw
Fig 18. Wave soldering footprint SOT363 (SC-88)
PMP5501V_G_Y_3
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 28 August 2009
11 of 14
PMP5501V; PMP5501G; PMP5501Y
NXP Semiconductors
PNP/PNP matched double transistors
12. Revision history
Table 10.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PMP5501V_G_Y_3
20090828
Product data sheet
-
PMP5501V_G_Y_2
Modifications:
•
This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
•
•
•
•
Figure 14 “Reflow soldering footprint SOT666”: updated
Figure 16 “Wave soldering footprint SOT353 (SC-88A)”: updated
Figure 17 “Reflow soldering footprint SOT363 (SC-88)”: updated
Figure 18 “Wave soldering footprint SOT363 (SC-88)”: updated
PMP5501V_G_Y_2
20060919
Product data sheet
-
PMP5501G_Y_1
PMP5501G_Y_1
20060221
Product data sheet
-
-
PMP5501V_G_Y_3
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 28 August 2009
12 of 14
NXP Semiconductors
PMP5501V; PMP5501G; PMP5501Y
PNP/PNP matched double transistors
13. Legal information
13.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
13.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
PMP5501V_G_Y_3
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 28 August 2009
13 of 14
NXP Semiconductors
PMP5501V; PMP5501G; PMP5501Y
PNP/PNP matched double transistors
15. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
11
12
13
13.1
13.2
13.3
13.4
14
15
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Application information. . . . . . . . . . . . . . . . . . . 8
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
Packing information. . . . . . . . . . . . . . . . . . . . . . 9
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12
Legal information. . . . . . . . . . . . . . . . . . . . . . . 13
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Contact information. . . . . . . . . . . . . . . . . . . . . 13
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 28 August 2009
Document identifier: PMP5501V_G_Y_3
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