InGaAs PIN photodiode array G8909-01 Photodiode array for DWDM monitor Features Applications 250 μm pitch, 40 ch parallel readout DWDM monitor with AWG Low crosstalk Precise chip position tolerance: ±0.05 mm Structure Parameter Photosensitive area Value φ0.08 Unit mm Pixel pitch Number of elements 250 40 μm ch Absolute maximum ratings Parameter Reverse voltage Incident light level Operating temperature Symbol VR max Pin Topr Storage temperature Tstg Value 6 10 -40 to +85* -40 to +85* Unit V mW °C °C * In N2 environment or in vacuum Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. Electrical and optical characteristics (Ta=25 °C, per 1 element) Parameter Spectral response range Photosensitivity Symbol λ S Photoresponse nonuniformity Dark current Shunt resistance Terminal capacitance Crosstalk PRNU ID Rsh Ct - Condition λ=1.31 μm λ=1.55 μm VR=5 V VR=10 mV VR=5 V, f=1 MHz VR=0.1 V Min. 0.8 0.85 - Typ. 0.9 to 1.7 0.9 0.95 0.02 8 1.4 -33 Max. ±5 0.2 - Unit μm A/W % nA GΩ pF dB The G8909-01 may be damaged by Electro Static Discharge, etc. Be carefull when using the G8909-01. www.hamamatsu.com 1 InGaAs PIN photodiode array G8909-01 Spectral response Dark current vs. reverse voltage (Typ. Ta=25 °C) (Typ. Ta=25 °C) 1 nA 100 pA Dark current Photosensitivity (A/W) 1 0.5 10 pA 0.6 0.8 1.0 1.2 1.4 1.6 1 pA 0.01 2.0 1.8 0.1 Wavelength (µm) 1 10 100 Reverse voltage (V) KIRDB0002EB KIRDB0266EA Terminal capacitance vs. reverse voltage (Typ. Ta=25 °C, f=1 MHz) 10 pF (Typ. VR=5 V) 100 nA 10 nA Dark current Terminal capacitance Dark current vs. ambient temperature 1 pF 1 nA 100 pA 100 fF 0.01 0.1 1 10 100 Reverse voltage (V) 10 pA 20 30 40 50 60 70 80 Ambient temperature (°C) KIRDB0267EA KIRDB0268EA 2 InGaAs PIN photodiode array G8909-01 Crosstalk characteristic 100 (Typ. Ta=25 °C, λ=1.55 µm, light spot size= 20 µm, Pin=5 nW, VR=0.1 V) 250 µm Light spot őũŰŵŰŴŦůŴŪŵŪŷŦ ŢųŦŢ Relative sensitivity (%) X 10 1 0.1 0.01 -250 -200 -150 -100 -50 0 Position X (µm) KIRDB0269EB Dimensional outline (unit: mm) Anode pad (pitch: 400 µm, 40 ch, 150 × 150 µm bond pads) 22.0 0.4 (0.1) 0.5 Cathode pad 0.8 2.5 2.1 Detail A (0.15) 10.5 0.70 ± 0.05* 2.0 0.80 A * The center of the photosensitive area to the bottom of the substrate KIRDA0158EA Information described in this material is current as of February, 2012. Product specifications are subject to change without prior notice due to improvements or other reasons. Before assembly into final products, please contact us for the delivery specification sheet to check the latest information. Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or a suffix "(Z)" which means developmental specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Thorshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 China: Hamamatsu Photonics (China) Co., Ltd.: 1201 Tower B, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No. KIRD1053E03 Feb. 2012 DN 3