Si photodiodes S1087/S1133 series Ceramic package photodiodes with low dark current The S1087/S1133 series are ceramic package photodiodes that offer low dark current. Ceramic package used is light-impervious, so no stray light can reach the photosensitive area from the side or backside. This allows reliable optical measurements in the visible to near infrared range, over a wide dynamic range from low light levels to high light levels. Features Applications S1087, S1133 : For visible range S1087-01, S1133-01 : For visible to IR range S1133-14 : For visible to near IR range Exposure meters Illuminometers Copiers Display light control Optical switches Structure /Absolute maximum ratings Absolute maximum ratings Type no. Dimensional outline/ Window material*1 Photosensitive area size (mm) S1087 S1087-01 S1133 S1133-01 S1133-14 (1)/V (2)/R (3)/V Reverse voltage VR max (V) (°C) Storage temperature Tstg (°C) -10 to +60*2 -20 to +70*2 Operating temperature Topr 1.3 × 1.3 10 2.4 × 2.8 (4)/R *1: Window material R=resin coating, V=visual-compensation filter *2: No condensation Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted) Type no. S1087 S1087-01 S1133 S1133-01 S1133-14 Spectral response range λ Peak sensitivity wavelength λp (nm) 320 to 730 320 to 1100 320 to 730 320 to 1100 320 to 1000 (nm) 560 960 560 960 720 Shunt Photosensitivity Dark Terminal Short Rise Temp. Temp. S current Infrared circuit time capacitance resistance coefficient coefficient Rsh (A/W) Ct sensitivity current ID tr of of VR=10 mV VR=0 V VR=0 V Isc ratio V R=1 V GaP He-Ne Isc TCID RL=1 kΩ f=10 kHz Min. Typ. 100 lx max. LED laser λp (pA) (times/°C) (μs) (pF) (GΩ) (GΩ) 560 nm 633 nm (%) (μA) (%/°C) 0.3 0.3 0.19 10 0.16 -0.01 0.5 200 250 0.58 0.33 0.38 1.3 0.1 10 0.3 0.3 0.19 10 0.61 -0.01 1.12 10 2.5 700 100 0.58 0.38 5.4 0.33 0.1 0.4 0.37 3.1 20 0.5 200 50 www.hamamatsu.com 1 Si photodiodes S1087/S1133 series Spectral response Photosensitivity temperature characteristics (S1087) (Typ. Ta=25 °C) 0.7 Photosensitivity (A/W) 0.5 Temperature coefficient (%/°C) S1087-01 S1133-01 0.6 QE=100% S1133-14 0.4 0.3 S1087 S1133 0.2 (Typ.) +1.0 +0.5 0 -0.5 0.1 0 200 400 600 800 -1.0 200 1000 400 600 800 1000 Wavelength (nm) Wavelength (nm) KSPDB0119EB KSPDB0063EB Rise time vs. load resistance Dark current vs. reverse voltage (Typ. Ta=25 °C, VR=0 V) 1 ms (Typ. Ta=25 °C) 1 nA 100 μs 100 pA S1133-14 S1133/-01 Dark current Rise time S1133/-01 10 μs 1 μs 10 pA 1 pA S1087/-01, S1133-14 100 ns 100 fA S1087/-01 10 ns 102 103 104 105 Load resistance (Ω) 10 fA 0.01 0.1 1 10 Reverse voltage (V) KSPDB0120EA KSPDB0121EA 2 Si photodiodes S1087/S1133 series Shunt resistance temperature characteristics Short circuit current linearity (Typ. VR=10 mV) 100 TΩ 10-2 10 TΩ S1133-01 S1087/-01 10-4 Short circuit current (A) Shunt resistance (Typ. Ta=25 °C, “A” light source fully illuminated) 100 1 TΩ 100 GΩ S1133/-01 10 GΩ S1133-14 -6 10 S1087-01 10-8 10-10 S1133 10-12 S1133-14 1 GΩ 10-14 100 MΩ -20 0 20 40 60 S1087 10-16 10-8 70 10-6 10-4 Ambient temperature (°C) 10-2 100 104 102 106 108 Incident light level (lx) KSPDB0122EA KSPDB0123EA Directivity S1087, S1133 S1087-01, S1133-01/-14 20° 10° 0° 10° 20° 30° 40° 60° Y direction 60 20 0 20 40 60 30° 40° 50° 60° 80° Y direction 70° 80° X direction 90° 100 80 90° 80 100 X direction 60° 70° 80° 40 10° 0° 10° 20° 50° X direction 70° X direction 20° 40° 60° 70° 90° 100 80 30° 40° 50° 50° 80° Y direction 30° Y direction (Typ. Ta=25 °C, light source: tungsten lamp) (Typ. Ta=25 °C, light source: tungsten lamp) 60 40 20 0 20 40 60 90° 80 100 Relative sensitivity (%) Relative sensitivity (%) KSPDB0342EA KSPDB0343EA 3 Si photodiodes S1087/S1133 series Dimensional outlines (unit: mm) (1) S1087 (2) S1087-01 Cathode Indicator hole +0 6.0 - 0.25 ϕ0.45 Lead 1.5 ± 0.2 5.0 ± 0.2 Photosensitive surface 12 ± 1.0 0.8 0.1 Filter 12 ± 1.0 Photosensitive surface 0.8 Filter +0 6.0 - 0.25 Photosensitive area 1.3 5.0 ± 0.2 Photosensitive area 1.3 1.5 ± 0.2 Cathode Indicator hole ϕ0.45 Lead 3.0 ± 0.2 3.0 ± 0.2 Tolerance unless otherwise noted: ±0.15 Tolerance unless otherwise noted: ±0.15 KSPDA0053EA (3) S1133 KSPDA0052EA (4) S1133-01/-14 Cathode Indicator hole Cathode Indicator hole +0 Photosensitive area 2.8 × 2.4 6.0 - 0.3 +0.1 Photosensitive area 2.8 × 2.4 6.0+0.1 -0.3 8.0 +0 - 0.25 8.0 - 0.25 ϕ0.45 Lead 9 ± 1.0 9 ± 1.0 ϕ0.45 Lead 1.5 ± 0.2 Photosensitive surface A Filter 0.7 0.2 Photosensitive surface 1.5 ± 0.2 Filter 5.0 ± 0.2 5.0 ± 0.2 A Tolerance unless otherwise noted: ±0.15 KSPDA0055EA S1133-01 S1133-14 0.7 0.6 Tolerance unless otherwise noted: ±0.15 KSPDA0054EA 4 Si photodiodes S1087/S1133 series Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions ∙ Notice ∙ Metal, Ceramic, Plastic products / Precautions Technical information ∙ Si photodiode / Application circuit examples Information described in this material is current as of March, 2014. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or a suffix "(Z)" which means developmental specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Thorshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 China: Hamamatsu Photonics (China) Co., Ltd.: 1201 Tower B, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No. KSPD1039E03 Mar. 2014 DN 5