s9055 series kpin1065e

PHOTODIODE
Si PIN photodiode
S9055 series
Flat response characteristics up to high frequency bands
S9055 series Si PIN photodiodes deliver a high-speed response exceeding 1 GHz at low bias voltage (VR=2 V). Their low capacitance (less than
1 pF) makes them ideal for combination with high-speed trans-impedance amplifiers.
Features
Applications
l Optical fiber communications
l High-speed measurement system
l Optical inter-connection
l Flat response characteristics up to high frequency bands
Frequency flatness: -0.5 dB Max.
(VR=2 V, λ=830 nm, f=100 MHz)
l High-speed response
S9055: 1.5 GHz (VR=2 V, -3 dB)
S9055-01: 2 GHz (VR=2 V, -3 dB)
l Low capacitance
S9055: 0.8 pF (VR=2 V)
S9055-01: 0.5 pF (VR=2 V)
l Highly reliable package: 3-pin TO-18 package
■ General rating / absolute maximum ratings (Ta=25 °C)
Parameter
Active area
Reverse voltage
Operating temperature
Storage temperature
Symbol
VR Max.
Topr
Tstg
S9055
φ0.2
S9055-01
φ0.1
Unit
mm
V
°C
°C
20
-40 to +100
-55 to +125
■ Electrical and optical characteristics (Ta=25 °C)
Parameter
Symbol
Spectral response range
Peak sensitivity wavelength
Photo sensitivity
Dark current
Terminal capacitance
λ
λp
S
ID
Ct
Cut-off frequency
fc
Frequency flatness
-
Condition
λ=850 nm
VR=2 V
VR=2 V, f=1 MHz
VR=2 V, RL=25 Ω
-3dB
VR=2 V, λ=850 nm
f=100 MHz
S9055
Typ.
Max.
320 to 1000
700
0.2
0.25
1
100
0.8
1.2
Min.
S9055-01
Typ.
Max.
320 to 1000
700
0.2
0.25
1
100
0.5
0.75
nm
nm
A/W
pA
pF
Min.
Unit
1.0
1.5
-
1.5
2
-
GHz
-
-
-0.5
-
-
-0.5
dB
1
Si PIN photodiode
■ Spectral response
■ Dark current vs. reverse voltage
(Typ. Ta=25 ˚C)
■ Terminal capacitance vs. reverse
voltage
(Typ. Ta=25 ˚C)
100 pA
S9055 series
(Typ. Ta=25 ˚C)
10 pF
0.3
0.2
TERMINAL CAPACITANCE
DARK CURRENT
PHOTO SENSITIVITY (A/W)
0.4
10 pA
1 pA
0.1
0
200
600
400
800
100 fA
0.01
1200
1000
WAVELENGTH (nm)
1
0.1
100
10
REVERSE VOLTAGE (V)
S9055
1 pF
S9055-01
100 fF
0.1
1
100
10
REVERSE VOLTAGE (V)
KPINB0276EB
KPINB0275EB
KPINB0274EA
■ Frequency characteristics
λ=410 nm
λ=830 nm
(Typ. Ta=25 ˚C, VR=2 V, RL=25 Ω)
5
(Typ. Ta=25 ˚C, VR=2 V, RL=25 Ω)
5
S9055-01
RELATIVE OUTPUT (dB)
RELATIVE OUTPUT (dB)
S9055-01
0
-5
S9055
-10
-15
100 kHz
1 MHz
10 MHz
100 MHz
1 GHz
10 GHz
0
-5
S9055
-10
-15
100 kHz
1 MHz
10 MHz
100 MHz
1 GHz
10 GHz
FREQUENCY
FREQUENCY
KPINB0277EB
KPINB0278EB
■ Dimensional outline (unit: mm)
0.45
LEAD
3.6 ± 0.2
2.7
PHOTOSENSITIVE
SURFACE
5.4 ± 0.2
4.7 ± 0.1
13.5
WINDOW
3.0 ± 0.1
2.54 ± 0.2
CASE
The glass window does not extend
beyond the upper edge of cap but
may be recessed a maximum of 0.1
mm from the cap edge.
KPINA0071EA
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2006 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
2
Cat. No. KPIN1065E04
Apr. 2006 DN