SS13M - SS16M Taiwan Semiconductor CREAT BY ART 1A, 30V - 60V Surface Mount Schottky Barrier Rectifiers FEATURES - Very low profile - typical height of 0.68mm - Low power loss, high efficiency - Ideal for automated placement - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA Case: Micro SMA Micro SMA Molding compound, UL flammability classification rating 94V-0 Moisture sensitivity level: level 1, per J-STD-020 Part No. with suffix "H" means AEC-Q101 qualified Packing code with suffix "G" means green compound (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 2 whisker test Polarity: Indicated by cathode band Weight: 6 mg (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) PARAMETER SYMBOL Marking code SS13M SS14M SS16M A B C 30 40 60 UNIT Maximum repetitive peak reverse voltage VRRM Maximum average forward rectified current IF(AV) 1 A Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM 25 A Maximum instantaneous forward voltage (Note 1) @ 0.5A / TJ=25 °C @ 0.5A / TJ=125 °C @ 1.0A / TJ=25 °C @ 1.0A / TJ=125 °C VF Maximum reverse current @ rated VR @ TJ=25 °C @ TJ=125 °C @ TJ=150 °C IR Typical junction capacitance (Note 2) CJ Typical thermal resistance Operating junction temperature range Storage temperature range V TYP MAX TYP MAX 0.45 - 0.51 - 0.35 - 0.46 - 0.52 0.55 0.64 0.68 0.46 0.50 0.57 0.60 TYP MAX TYP MAX 5 50 5 50 μA 3 10 3 10 mA - 6.7 - mA 5.3 50 40 V pF RθJL RθJC RθJA 30 40 125 °C/W TJ -55 to +150 °C TSTG -55 to +150 °C Note 1: Pulse test with PW=300μs, 1% duty cycle Note 2: Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C. Document Number: DS_D1410044 Version: L15 SS13M - SS16M Taiwan Semiconductor CREAT BY ART ORDERING INFORMATION PART NO. PART NO. PACKING CODE PACKING CODE SUFFIX SS1xM (Note 1, 2) PACKAGE PACKING Micro SMA 3,000 / 7" Plastic reel SUFFIX H RS G Note 1: "x" defines voltage from 30V (SS13M) to 60V (SS16M) Note 2: Whole series with green compound EXAMPLE PART NO. PREFERRED P/N PART NO. SS16MHRSG SUFFIX H SS16M PACKING CODE PACKING CODE DESCRIPTION SUFFIX RS Automotive grade Green compound G RATINGS AND CHARACTERISTICS CURVES (TA=25°C unless otherwise noted) FIG. 2 MAXIMUM FORWARD SURGE CURRENT 1.2 PEAK FORWARD SURAGE CURRENT(A) AVERAGE FORWARD CURRENT (A) FIG.1 MAXIMUM FORWARD CURRENT DERATING CURVE 1 0.8 0.6 0.4 RESISTIVE OR INDUVTIVE LOAD 0.2 0 0 25 50 75 100 125 150 40 8.3ms Single Half Sine-Wave 30 20 10 0 1 10 LEAD TEMPERATURE (°C) 100 NUMBER OF CYCLES AT 60 Hz FIG. 3 TYPICAL FORWARD CHARACTERISTICS - SS13M/14M FIG. 4 TYPICAL FORWARD CHARACTERISTICS - SS16M 100 INSTANTANEOUS FORWARD CURRENT(A) INSTANTANEOUS FORWARD CURRENT (A) 100 10 TJ=150°C 1 TJ=125°C 0.1 TJ=25°C 10 TJ=150°C 1 TJ=125°C 0.1 TJ=25°C 0.01 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 FORWARD VOLTAGE (V) Document Number: DS_D1410044 0.8 0.9 1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 FORWARD VOLTAGE (V) Version: L15 SS13M - SS16M Taiwan Semiconductor CREAT BY ART FIG. 5 TYPICAL REVERSE CHARACTERISTICS - SS13M/14M 100 INSTANTANEOUS REVERSE CURRENT (mA) INSTANTANEOUS REVERSE CURRENT (mA) 100 TJ=150°C 10 1 TJ=125°C 0.1 0.01 TJ=25°C 0.001 0.0001 10 20 30 40 50 60 70 80 90 FIG. 6 TYPICAL REVERSE CHARACTERISTICS - SS16M 100 TJ=150°C 10 1 TJ=125°C 0.1 0.01 TJ=25°C 0.001 0.0001 10 30 40 50 60 70 80 90 100 PERCENT OF RATED PEAK REVERSE VOLTAGE(%) PERCENT OF RATED PEAK REVERSE VOLTAGE(%) FIG. 8 TYPICAL TRANSIENT THERMAL IMPEDANCE FIG. 7 TYPICAL JUNCTION CAPACITANCE 1000 TRANSIENT THERMAL IMPEDANCE(°C/W) 1000 CAPACITANCE (pF) 20 SS16M 100 SS13M/SS14M 10 1 0.1 1 10 REVERSE VOLTAGE (V) Document Number: DS_D1410044 100 SS16M 100 SS13M/SS14M 10 1 0.1 1 10 100 t-PULSE DURATION(S) Version: L15 SS13M - SS16M Taiwan Semiconductor CREAT BY ART PACKAGE OUTLINE DIMENSIONS Micro SMA Unit (mm) DIM. Unit (inch) Min Max Min Max A 2.30 2.70 0.091 0.106 B 2.10 2.30 0.083 0.091 C 0.63 0.73 0.025 0.029 D 0.10 0.20 0.004 0.008 E 1.15 1.35 0.045 0.053 F 0.65 0.85 0.026 0.034 G 1.15 1.35 0.045 0.053 H 0.75 0.95 0.030 0.037 I 1.10 1.50 0.043 0.059 J 0.55 0.75 0.022 0.030 K 0.55 0.75 0.022 0.030 L 0.65 0.85 0.026 0.034 SUGGESTED PAD LAYOUT Symbol Unit (mm) Unit (inch) A 1.1 0.043 B 2.0 0.079 C 0.5 0.020 D 0.8 0.031 E 1.0 0.039 MARKING DIAGRAM P/N = Marking code YW = Date Code Document Number: DS_D1410044 Version: L15 SS13M - SS16M Taiwan Semiconductor CREAT BY ART Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. Document Number: DS_D1410044 Version: L15