MUR105S thru MUR160S Taiwan Semiconductor CREAT BY ART Surface Mount Ultrafast Power Rectifiers FEATURES - Glass passivated chip junction - Ideal for automated placement - Ultrafast recovery time for high efficiency - Low forward voltage, low power loss - Moisture sensitivity level: level 1, per J-STD-020 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA Case: DO-214AA (SMB) DO-214AA (SMB) Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix "G" on packing code - green compound (halogen-free) Base P/N with prefix "H" on packing code - AEC-Q101 qualified Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test with prefix "H" on packing code meet JESD 201 class 2 whisker test Polarity: Indicated by cathode band Weight: 0.09 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) PARAMETER SYMBOL MUR MUR MUR MUR MUR MUR 105S 110S 115S 120S 140S 160S Unit Maximum repetitive peak reverse voltage VRRM 50 100 150 200 400 600 V Maximum RMS voltage VRMS 35 70 105 140 280 420 V Maximum DC blocking voltage VDC 50 100 150 200 400 600 V Maximum average forward rectified current IF(AV) Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM 40 35 A VF 0.875 0.710 1.25 1.05 V Maximum instantaneous forward voltage (Note 1) @ 1 A, TJ=25℃ @ 1 A, TJ=150℃ Maximum reverse current @ rated VR TJ=25 ℃ TJ=150 ℃ Maximum reverse recovery time (Note 2) Typical thermal resistance Operating junction temperature range Storage temperature range IR Trr 1 A 2 5 50 150 25 50 μA ns O RθjL 17 TJ - 55 to +175 O C TSTG - 55 to +175 O C C/W Note 1: Pulse test with PW=300μs, 1% duty cycle Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A Document Number: DS_D1405061 Version: H14 MUR105S thru MUR160S Taiwan Semiconductor ORDERING INFORMATION PART NO. AEC-Q101 PACKING CODE GREEN COMPOUND QUALIFIED PACKAGE PACKING SMB 850 / 7" Plastic reel SMB 3,000 / 13" Paper reel SMB 3,000 / 13" Plastic reel CODE R5 MUR1xxS (Note 1) Prefix "H" R4 Suffix "G" M4 Note 1: "xx" defines voltage from 50V (MUR105S) to 600V (MUR160S) EXAMPLE AEC-Q101 PREFERRED P/N PART NO. MUR160S R5 MUR160S R5 MUR160S R5G MUR160S R5 MUR160SHR5 MUR160S GREEN COMPOUND PACKING CODE QUALIFIED H DESCRIPTION CODE G Green compound R5 AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA=25℃ unless otherwise noted) PEAK FORWARD SURGE CURRENT (A) FIG.1 MAXIMUM FORWARD CURRENT DERATING CURVE AVERAGE FORWARD CURRENT (A) 1.5 1 0.5 0 0 25 50 75 100 125 150 FIG. 2 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 50 40 30 20 10 0 175 1 10 LEAD TEMPERATURE (oC) FIG. 4 TYPICAL FORWARD CHARACTERISTICS INSTANTANEOUS FORWARD CURRENT(A) INSTANTANEOUS FORWARD CURRENT(A) FIG. 3 TYPICAL FORWARD CHARACTERISTICS 10 MUR105S-120S TJ=150℃ 1 TJ=25℃ 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 FORWARD VOLTAGE (V) Document Number: DS_D1405061 100 NUMBER OF CYCLES AT 60 Hz 1.6 1.8 2 10 MUR140S-160S TJ=150℃ 1 TJ=25℃ 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 FORWARD VOLTAGE (V) Version: H14 MUR105S thru MUR160S Taiwan Semiconductor FIG. 6 TYPICAL REVERSE CHARACTERISTICS 1000 INSTANTANEOUS REVERSE CURRENT (μA) INSTANTANEOUS REVERSE CURRENT (μA) FIG. 5 TYPICAL REVERSE CHARACTERISTICS MUR105S-120S 100 TJ=150℃ 10 1 0.1 TJ=25℃ 0.01 0.001 1000 MUR140S-160S 100 TJ=150℃ 10 1 0.1 TJ=25℃ 0.01 0.001 10 20 30 40 50 60 70 80 90 100 10 PERCENT OF RATED PEAK REVERSE VOLTAGE.(%) 20 30 40 50 60 70 80 90 100 PERCENT OF RATED PEAK REVERSE VOLTAGE.(%) FIG. 7 TYPICAL JUNCTION CAPACITANCE 70 CAPACITANCE (pF) 60 50 40 30 MUR105S-120S 20 10 MUR140S-160S 0 0 4 8 12 16 20 24 REVERSE VOLTAGE (V) PACKAGE OUTLINE DIMENSIONS DIM. Document Number: DS_D1405061 Unit (mm) Unit (inch) Min Max Min Max A 1.95 2.10 0.077 0.083 B 4.25 4.75 0.167 0.187 C 3.48 3.73 0.137 0.147 D 1.99 2.61 0.078 0.103 E 0.90 1.41 0.035 0.056 F 5.10 5.30 0.201 0.209 G 0.10 0.20 0.004 0.008 H 0.15 0.31 0.006 0.012 Version: H14 MUR105S thru MUR160S Taiwan Semiconductor SUGGESTED PAD LAYOUT Symbol Unit (mm) Unit (inch) A 2.3 0.091 B 2.5 0.098 C 4.3 0.169 D 1.8 0.071 E 6.8 0.268 MARKING DIAGRAM P/N = Specific Device Code G = Green Compound YW = Date Code F = Factory Code Document Number: DS_D1405061 Version: H14 MUR105S thru MUR160S Taiwan Semiconductor CREAT BY ART Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied,to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or seling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. Document Number: DS_D1405061 Version: H14