TESDU5V0/TESDU12V/TESDU24V Taiwan Semiconductor Small Signal Product Bi-directional ESD Protection Diode FEATURES - Meet IEC61000-4-2 (ESD) ±15kV (air), ±8kV (contact) - Designed for mounting on small surface - Protects one Bi-directional I/O line - Moisture sensitivity level 1 - Working Voltage : 5V, 12V, 24V - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC 0603 - Halogen-free according to IEC 61249-2-21 MECHANICAL DATA - Case: 0603 small outline plastic package - Terminal : Gold plated, solder per MIL-STD-705, method 2026 guaranteed - High temperature soldering guaranteed : 260°C/10s - Weight: 3 ± 0.5 mg APPLICATIONS - Cell Phone Handsets and Accessories - Notebooks, Desktops, and Servers - Keypads, Side Keys, USB 2.0, LCD Displays - Portable Instrumentation - Touch Panel MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) PARAMETER VALUE SYMBOL TESDU5V0 Peak Pulse Power (tp=8/20μs waveform) TESDU12V PPP 25 TESDU24V ESD per IEC 61000-4-2 (Air) Junction and Storage Temperature Range SYMBOL TESDU5V0 Reverse Stand-Off Voltage VRWM TESDU12V TESDU24V TESDU5V0 Reverse Breakdown Voltage TESDU12V IR = 1 mA V(BR) TESDU24V Reverse Leakage Current TESDU5V0 VR = 5 V TESDU12V VR = 12 V TESDU24V VR = 24 V Clamping Voltage TESDU5V0 Clamping Voltage TESDU12V Clamping Voltage TESDU24V TESDU5V0 Junction Capacitance ± 15 TESDU12V TESDU24V IPP = 1 A IPP = 5 A IPP = 1 A IPP = 5 A IPP = 1 A IPP = 5 A IR VC VC VC KV ±8 -55 to +150 TJ, TSTG PARAMETER W 47 VESD ESD per IEC 61000-4-2 (Contact) UNIT 75 °C MIN MAX - 5 - 12 - 24 5.1 - 13 - 25 - - 2 - 9.8 - 15 - 25 - 33 - 47 - 51 UNIT V V μA V V V 15 VR = 0 V f = 1.0 MHz CJ 12 pF 10 Version: H1601 TESDU5V0/TESDU12V/TESDU24V Taiwan Semiconductor Small Signal Product RATINGS AND CHARACTERISTICS CURVES (TA=25°C unless otherwise noted) Fig. 2 Typical Junction Capacitance Fig. 1 Admissible Power Dissipation Curve 15 Normalized Capacitance (pF) 120 100 Power Rating (%) 80 60 40 20 TESDU5V0 10 TESDU12V TESDU24V 5 f = 1.0 MHz 0 0 0 20 40 60 80 100 120 140 160 180 0 5 10 15 20 25 Reverse Voltage (V) Ambient Temperature(°C) Fig. 3 Fig. 3 Clamping Voltage VS. Peak Pulse Current 60 Fig. 4 TESDE Clamping Voltage (V) 50 40 TESDU24V TESDE 30 TESDU12V 20 TESDE 10 Waveform parameters: tr = 8 μs , td = 20 μs TESDU5V0 0 0 1 2 3 4 5 Peak Pulse Current (A) Fig. 5 TESDE TESDE TESDE Version: H1601 TESDU5V0/TESDU12V/TESDU24V Taiwan Semiconductor Small Signal Product ORDERING INFORMATION PART NO. PACKING CODE TESDUxxx (Note1, 2) PACKING CODE SUFFIX RG G PACKAGE PACKING 0603 4,000 / 7" Reel Note 1: "xxx" defines voltage from 5V (TESDU5V0) to 24V (TESDU24V) Note 2: Whole series with green compound EXAMPLE EXAMPLE P/N PART NO. PACKING CODE TESDU5V0 RGG TESDU5V0 RG PACKING CODE DESCRIPTION SUFFIX G Green compound PACKAGE OUTLINE DIMENSIONS 0603 Unit (mm) Unit (inch) Min Max Min Max A 1.60 1.80 0.063 0.071 B 0.80 1.00 0.031 0.039 C 0.70 0.85 0.028 0.033 DIM. D 0.45 (Typ.) 0.018 (Typ.) E 0.70 (Typ.) 0.028 (Typ.) Unit (mm) Unit (inch) Typ. Typ. A 0.60 0.024 B 1.00 0.039 C 0.65 0.026 D 1.85 0.073 SUGGEST PAD LAYOUT DIM. Note: The suggested land pattern dimensions have been provided for reference only, as actual pad layouts may vary depending on application. MARKING Part NO. Marking TESDU5V0 E05 TESDU12V E12 TESDU24V E24 Version: H1601 TESDU5V0/TESDU12V/TESDU24V Taiwan Semiconductor Small Signal Product APPLICATIONS INFORMATION ◇ Designed to protect one data, I/O, or power supply line ◇ Designed to protect sensitive electronics from damage or latch-up due to ESD ◇ Designed to replace multilayer varistors (MLVs) in portable applications ◇ Features large cross-sectional area junctions for conducting high transient currents ◇ Offers superior electrical characteristics such as lower clamping voltage and no device degradation when compared to MLVs ◇ The combination of small size and high ESD surge capability makes them ideal for use in portable applications CIRCUIT BOARD LAYOUT RECOMMENDATIONS Good circuit board layout is critical for the suppression of ESD induced transients ◇ Place the ESD Protection Diode near the input terminals or connectors to restrict transient coupling ◇ Minimize the path length between the ESD Protection Diode and the protected line ◇ Minimize all conductive loops including power and ground loops ◇ The ESD transient return path to ground should be kept as short as possible ◇ Never run critical signals near board edges ◇ Use ground planes whenever possible Version: H1601 TESDU5V0/TESDU12V/TESDU24V Taiwan Semiconductor Small Signal Product Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. Version: H1601