TESDE5V0/TESDE12V/TESDE24V Taiwan Semiconductor Small Signal Product Bi-directional ESD Protection Diode FEATURES - Meet IEC61000-4-2 (ESD) ±15kV (air), ±8kV (contact) - Designed for mounting on small surface - Protects one Bi-directional I/O line - Moisture sensitivity level 1 - Working Voltage : 5V, 12V, 24V - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC 0503 - Halogen-free according to IEC 61249-2-21 MECHANICAL DATA - Case: 0503 small outline plastic package - Terminal : Gold plated, solder per MIL-STD-705, method 2026 guaranteed - High temperature soldering guaranteed : 260°C/10s - Weight: 2 ± 0.5 mg APPLICATIONS - Cell Phone Handsets and Accessories - Notebooks, Desktops, and Servers - Keypads, Side Keys, USB 2.0, LCD Displays - Portable Instrumentation - Touch Panel MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) PARAMETER VALUE SYMBOL TESDE5V0 Peak Pulse Power (tp=8/20μs waveform) TESDE12V PPP 25 TESDE24V ESD per IEC 61000-4-2 (Air) Junction and Storage Temperature Range SYMBOL TESDE5V0 Reverse Stand-Off Voltage VRWM TESDE12V TESDE24V TESDE5V0 Reverse Breakdown Voltage TESDE12V IR = 1 mA V(BR) TESDE24V Reverse Leakage Current TESDE5V0 VR = 5 V TESDE12V VR = 12 V TESDE24V VR = 24 V Clamping Voltage TESDE5V0 Clamping Voltage TESDE12V Clamping Voltage TESDE24V TESDE5V0 Junction Capacitance ± 15 TESDE12V TESDE24V IPP = 1 A IPP = 5 A IPP = 1 A IPP = 5 A IPP = 1 A IPP = 5 A IR VC VC VC KV ±8 -55 to +150 TJ, TSTG PARAMETER W 47 VESD ESD per IEC 61000-4-2 (Contact) UNIT 75 °C MIN MAX - 5 - 12 - 24 5.1 - 13 - 25 - - 2 - 9.8 - 15 - 25 - 33 - 47 - 51 UNIT V V μA V V V 15 VR = 0 V f = 1.0 MHz CJ 12 pF 10 Version: G1601 TESDE5V0/TESDE12V/TESDE24V Taiwan Semiconductor Small Signal Product RATINGS AND CHARACTERISTICS CURVES (TA=25°C unless otherwise noted) Fig. 2 Pulse Waveform Fig. 1 Non-Repetitive Peak Pulse Power VS. Pulse Time 110 100 Waveform parameters: tr = 8 μs , td = 20 μs 90 80 1 Percent of IPP Peak Pulse Power Ppp (KW) 10 0.1 70 60 50 td = Ipp / 2 40 30 20 10 0 0.01 0.1 1 10 100 0 1000 5 10 20 25 30 Time (μs) Pulse Duration (μs) Fig. 4 Typical Junction Capacitance Fig. 3 Admissible Power Dissipation Curve 15 120 Normalized Capacitance (pF) 100 80 Power Rating (%) 15 60 40 20 Fig. 3 TESDE5V0 10 TESDE12V TESDE24V 5 Fig. 4 TESDE f = 1.0 MHz 0 TESDE 0 0 20 40 60 80 Ambient 100 120 140 160 180 Temperature(°C) 0 5 10 15 20 25 TESDE Reverse Voltage (V) Fig. 5 Clamping Voltage VS. Peak Pulse Current 60 Clamping Voltage (V) 50 40 TESDE24V Fig. 5 TESDE 30 TESDE12V 20 TESDE 10 Waveform parameters: tr = 8 μs , td = 20 μs TESDE5V0 TESDE 0 0 1 2 3 4 5 Peak Pulse Current (A) Version: G1601 TESDE5V0/TESDE12V/TESDE24V Taiwan Semiconductor Small Signal Product ORDERING INFORMATION PART NO. PACKING CODE TESDExxx (Note 1, 2) RG PACKING CODE SUFFIX PACKAGE PACKING 0503 4,000 / 7" reel G Note 1: "xxx" is Device Code from "5V0" - "24V". Note 2: Whole series with green compound EXAMPLE EXAMPLE P/N PART NO. TESDE5V0 RGG TESDE5V0 PACKING PACKING CODE CODE SUFFIX RG G DESCRIPTION Green compound PACKAGE OUTLINE DIMENSIONS 0503 Unit (mm) Unit (inch) Min Max Min Max A 1.15 1.35 0.045 0.053 B 0.65 0.85 0.026 0.033 C 0.60 0.75 0.024 0.030 DIM. D 0.40 (Typ.) 0.016 (Typ.) E 0.55 (Typ.) 0.022 (Typ.) Unit (mm) Unit (inch) Typ. Typ. A 0.55 0.022 B 0.85 0.033 C 0.30 0.012 D 1.40 0.055 SUGGEST PAD LAYOUT DIM. Note: The suggested land pattern dimensions have been provided for reference only, as actual pad layouts may vary depending on application. MARKING Part NO. Marking TESDE5V0 E05 TESDE12V E12 TESDE24V E24 Version: G1601 TESDE5V0/TESDE12V/TESDE24V Taiwan Semiconductor Small Signal Product APPLICATION INFROMATION - Designed to protect one data, I/O, or power supply line - Designed to protect sensitive electronics from damage or latch-up due to ESD - Designed to replace multilayer varistors (MLVs) in portable applications - Features large cross-sectional area junctions for conducting high transient currents - Offers superior electrical characteristics such as lower clamping voltage and no device degradation when compared to MLVs - The combination of small size and high ESD surge capability makes them ideal for use in portable applications CIRCUIT BOARD LAYOUT RECOMMENDATIONS - Good circuit board layout is critical for the suppression of ESD induced transients - Place the ESD Protection Diode near the input terminals or connectors to restrict transient coupling - Minimize the path length between the ESD Protection Diode and the protected line - Minimize all conductive loops including power and ground loops - The ESD transient return path to ground should be kept as short as possible - Never run critical signals near board edges - Use ground planes whenever possible Version: G1601 TESDE5V0/TESDE12V/TESDE24V Taiwan Semiconductor Small Signal Product Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. Version: G1601