TSM9N90 900V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY VDS (V) RDS(on)(Ω) Pin Definition: 1. Gate 2. Drain 3. Source 900 1.4 @ VGS =10V ID (A) 9 General Description d The TSM9N90 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, electronic lamp ballast based on half bridge. Block Diagram Low RDS(ON) 1.4Ω (Max.) ● Low gate charge typical @ 65nC (Typ.) ● Improve dv/dt capability Part No. Package Packing TO-220 50pcs / Tube eco TSM9N90CZ C0G mm Ordering Information en ● de Features tR TSM9N90CI C0G ITO-220 50pcs / Tube Note: “G” denote for Halogen Free Product N-Channel MOSFET Parameter No Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Drain-Source Voltage Gate-Source Voltage Symbol Tc = 25 C o Tc = 100 C Pulsed Drain Current * Unit 900 V VGS ±30 V ID IDM Peak Diode Recovery dv/dt (Note 3) ITO-220 VDS o Continuous Drain Current TO-220 9 9* 5.7 5.7 * 36 36 * A A dv/dt 4.5 V Single Pulse Avalanche Energy (Note 2) EAS 857 mJ Avalanche Current (Repetitive) (Note 1) IAR 9 A Repetitive Avalanche Energy (Note 1) EAR 29 mJ o Power Dissipation Tc = 25 C Derate above 25℃ Operating Junction Temperature Storage Temperature Range * Limited by maximum junction temperature PD 290 48 W 2.32 0.38 ºC/W TJ 150 TSTG -55 to +150 1/10 ºC o C Version: B13 TSM9N90 900V N-Channel Power MOSFET Thermal Performance Parameter Thermal Resistance - Junction to Case Thermal Resistance - Junction to Ambient Notes: Surface mounted on FR4 board t ≤ 10sec Symbol TO-220 ITO-220 RӨJC 0.43 2.6 Unit o C/W RӨJA 62.5 Electrical Specifications (Tc = 25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static VGS = 0V, ID = 250uA BVDSS 900 -- -- V Drain-Source On-State Resistance VGS = 10V, ID = 4.5A RDS(ON) -- 1.13 1.4 Ω Gate Threshold Voltage VDS = VGS, ID = 250uA VGS(TH) 2.0 -- 4.0 V Zero Gate Voltage Drain Current VDS = 900V, VGS = 0V IDSS -- -- 10 uA Gate Body Leakage VGS = ±30V, VDS = 0V IGSS -- -- ±100 nA Forward Transconductance VDS = 30V, ID = 4.5A gfs -- 10 -- S Diode Forward Voltage IS = 9A, VGS = 0V VSD -- -- 1.5 V Qg -- 65 -- Qgs -- 11 -- Qgd -- 23 -- Ciss -- 2324 -- Coss -- 184 -- Crss -- 29 -- td(on) -- 61 -- tr -- 49 -- td(off) -- 318 -- tf -- 100 -- tfr -- 470 -- nS -- uC Total Gate Charge VDS = 720V, ID = 9A, Gate-Source Charge VGS = 10V eco Gate-Drain Charge Input Capacitance VDS = 25V, VGS = 0V, Reverse Transfer Capacitance Switching No Turn-On Delay Time f = 1.0MHz tR Output Capacitance c Turn-On Rise Time VGS = 10V, ID = 9A, Turn-Off Delay Time VDD = 450V, RG = 25Ω Turn-Off Fall Time Reverse Recovery Time de en b mm Dynamic d Drain-Source Breakdown Voltage VGS = 0V, IS = 9A, dIF/dt = 100A/us Reverse Recovery Charge Qfr -4.9 Notes: 1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature 2. Max Rating EAS Test Condition: VDD = 50V, IAS=9A, L=20mH, RG=25Ω, Starting TJ=25℃ 3. Guaranteed 100% EAS Test Condition: VDD = 50V, IAS=9A, L=1mH, RG=25Ω, Starting TJ=25℃ 4. ISD ≤9A, di/dt ≤ 200A/uS, VDD ≤ BV, Starting TJ=25℃ 5. Pulse test: pulse width ≤300uS, duty cycle ≤2% 6. b For design reference only, not subject to production testing. 7. c Switching time is essentially independent of operating temperature. 2/10 nC pF nS Version: B13 TSM9N90 900V N-Channel Power MOSFET Electrical Characteristics Curve (Tc = 25oC, unless otherwise noted) Transfer Characteristics en Gate Charge No tR eco mm On-Resistance vs. Drain Current de d Output Characteristics On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 3/10 Version: B13 TSM9N90 900V N-Channel Power MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) BVDSS vs. Junction Temperature de d Drain Current vs. Case Temperature Capacitance vs. Drain-Source Voltage No tR eco mm en Maximum Safe Operating Area Maximum Safe Operating Area (ITO-220) 4/10 Version: B13 TSM9N90 900V N-Channel Power MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) de d Normalized Thermal Transient Impedance, Junction-to-Ambient No tR eco mm en Normalized Thermal Transient Impedance, Junction-to-Ambient(ITO-220) 5/10 Version: B13 TSM9N90 900V N-Channel Power MOSFET en No tR eco mm Resistive Switching Test Circuit & Waveform de d Gate Charge Test Circuit & Waveform EAS Test Circuit & Waveform 6/10 Version: B13 TSM9N90 900V N-Channel Power MOSFET No tR eco mm en de d Diode Reverse Recovery Time Test Circuit & Waveform 7/10 Version: B13 TSM9N90 900V N-Channel Power MOSFET Unit: Millimeters No Marking Diagram tR eco mm en de d TO-220 Mechanical Drawing Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code 8/10 Version: B13 TSM9N90 900V N-Channel Power MOSFET Unit: Millimeters No tR eco mm en de d ITO-220 Mechanical Drawing Marking Diagram Y G WW F = Year Code = Halogen Free = Week Code by Calendar Year = Factory Code 9/10 Version: B13 TSM9N90 No tR eco mm en de d 900V N-Channel Power MOSFET Notice Specifications of the products displayed herein are subject to change without notice. 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