TSM7N65 650V N-Channel Power MOSFET ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) 650 ID (A) 1.2 @ VGS =10V 6.4 d TO-220 General Description Block Diagram Features Low RDS(ON) 1.2Ω (Max.) Low gate charge typical @ 32nC (Typ.) Low Crss typical @ 25pF (Typ.) Fast Switching Part No. e co Ordering Information mm ● ● ● ● en de The TSM7N65 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge. Package Packing TO-220 ITO-220 50pcs / Tube 50pcs / Tube tR TSM7N65CZ C0 TSM7N65CI C0 N-Channel MOSFET Absolute Maximum Rating (TA=25oC unless otherwise noted) Parameter No Drain-Source Voltage Gate-Source Voltage Ta =25ºC Continuous Drain Current Ta =100ºC Symbol Limit VDS 650 V VGS ±30 V 6.4 A 3.8 A ID Unit Pulsed Drain Current * IDM 22 A Single Pulse Avalanche Energy (Note 2) EAS 216 mJ Repetitive Avalanche Current (Note 1) IAR 6 A o Total Power Dissipation @ TC = 25 C TO-220 ITO-220 Operating Junction Temperature PTOT TJ Storage Temperature Range * Limited by maximum junction temperature TSTG 1/9 125 30 150 -55 to +150 W ºC o C Version: D12 TSM7N65 650V N-Channel Power MOSFET Thermal Performance Parameter Symbol TO-220 Thermal Resistance - Junction to Case RӨJA Electrical Specifications (Ta = 25oC unless otherwise noted) Typ Max Unit BVDSS 650 -- -- V RDS(ON) -- 1.0 1.2 Ω VGS(TH) 2.0 -- 4.0 V -- -- 1 -- -- 50 IGSS -- -- ±10 uA VDS = 8V, ID = 1A gfs -- 3.7 -- S IS = 6A, VGS = 0V VSD -- -- 1.6 V Qg -- 32 46 Qgs -- 6 -- Qgd -- 11 -- Ciss -- 905 -- Coss -- 115 -- Crss -- 25 -- Drain-Source On-State Resistance VGS = 10V, ID = 3A Gate Threshold Voltage VDS = VGS, ID = 250uA en VGS = 0V, ID = 250uA VDS = 650V, VGS = 0V mm IDSS VDS = 650V, VGS = 0V, TC=125ºC Forward Transfer Conductance Dynamic VGS = ±20V, VDS = 0V e co Diode Forward Voltage Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 300V, ID = 6A, VGS = 10V tR Input Capacitance Output Capacitance Reverse Transfer Capacitance C/W Min Drain-Source Breakdown Voltage Gate Body Leakage o Symbol Static Zero Gate Voltage Drain Current C/W 62.5 de Conditions o 4.2 d Thermal Resistance - Junction to Ambient Note: Surface mounted on FR4 board t ≤ 10sec Unit 1.0 RӨJC ITO-220 Parameter Limit VDS = 25V, VGS = 0V, f = 1.0MHz uA nC pF No Switching Turn-On Delay Time td(on) -- 14 -- Turn-On Rise Time VGS = 10V, ID = 6A, tr -- 14 -- Turn-Off Delay Time VDD = 300V, RG = 25Ω td(off) -- 47 -- tf -- 19 -- tfr -- 638 -- nS -- 4.8 -- uC Turn-Off Fall Time Reverse Recovery Time VGS = 0V, IS = 6A, dIF/dt = 100A/us Reverse Recovery Charge Qfr Note: 1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature 2. VDD = 50V, IAS=3.6A, L=30mH, VDS=500V 3. Pulse test: pulse width ≤300uS, duty cycle ≤2% 4. Essentially Independent of Operating Temperature 2/9 nS Version: D12 TSM7N65 650V N-Channel Power MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Transfer Characteristics mm en de d Output Characteristics Gate Charge No tR e co On-Resistance vs. Drain Current On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 3/9 Version: D12 TSM7N65 650V N-Channel Power MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Threshold Voltage mm en de d On-Resistance vs. Gate-Source Voltage Maximum Safe Operating Area - ITO-220 tR e co Maximum Safe Operating Area - TO-220 No Normalized Thermal Transient Impedance, Junction-to-Ambient 4/9 Version: D12 TSM7N65 650V N-Channel Power MOSFET mm en de d Gate Charge Test Circuit & Waveform tR e co Resistive Switching Test Circuit & Waveform No EAS Test Circuit & Waveform 5/9 Version: D12 TSM7N65 650V N-Channel Power MOSFET No tR e co mm en de d Diode Reverse Recovery Time Test Circuit & Waveform 6/9 Version: D12 TSM7N65 650V N-Channel Power MOSFET Unit: Millimeters tR e co mm en de d TO-220 Mechanical Drawing Marking Diagram No Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) L = Lot Code 7/9 Version: D12 TSM7N65 650V N-Channel Power MOSFET Unit: Millimeters tR e co mm en de d ITO-220 Mechanical Drawing No Marking Diagram Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) L = Lot Code 8/9 Version: D12 TSM7N65 No tR e co mm en de d 650V N-Channel Power MOSFET Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 9/9 Version: D12