SiGeC microwave NPN transistor BFU725F A perfect match up to 20 GHz Meet the trend towards higher frequencies. With NXP Semiconductors’ latest SiGeC microwave NPN transistor BFU725F, you get high switching frequencies plus extremely high gain and low noise. All this in an easy-to-use SOT343F package. It’s the ideal solution for applications up to 20 GHz. Key features Ñ Very low noise (0.4 dB at 1.8 GHz / 0.67 dB at 5.8 GHz) Ñ High maximum stable gain (27.8 dB at 1.8 GHz / 10 dB at 18 GHz) Ñ High switching frequency (f T >100 GHz / fMAX >150 GHz) Ñ Plastic surface-mount SOT343F package Key beneﬁts Ñ SiGeC process delivers high switching frequency from a silicon-based device Ñ Cost-effective alternative to GaAs devices Ñ RoHS compliant Key applications Ñ GPS systems Ñ DECT phones Ñ Low noise amplifier (LNA) for microwave communications systems Ñ 2nd stage LNA and mixer in direct broadcast satellite (DBS) low-noise blocks (LNBs) Ñ Satellite radio Ñ WLAN and CDMA applications Ñ Low-noise microwave applications The NPN microwave transistor BFU725F delivers an unbeatable blend of high switching frequency, high gain and very low noise. Thanks to its ultra-low noise figure, it’s perfect for your sensitive RF receivers particularly those for high-performance cell phones. Alternatively, with its high cut-off frequency, it’s your ideal solution for microwave applications in the 10 GHz to 30 GHz range, such as satellite TV receivers and automotive collision avoidance radar. The BFU725F get its outstanding performance from our innovative silicon-germanium-carbon (SiGeC) BiCMOS process. QUBiC4X was designed specifically to meet the needs of real-life, high-frequency applications and delivers an unrivalled fusion of high power gain and excellent dynamic range. It combines the performance of gallium-arsenide (GaAs) technologies with the reliability of a silicon-based process. In addition, with the BFU725F, you don’t need a biasing IC or negative biasing voltage. So it’s a much more cost-effective solution than GaAs pHEMT devices. Parameter Symbol Conditions Value Collector-emitter breakdown voltage BVCEO IC = 1 mA; IB = 0 3.2 V Maximum collector current IC(max) Transition frequency fT Noise figure NF Maximum stable power gain MSG / GP(max) 40 mA VCE = 2 V; IC = 25 mA; f = 2 GHz 68 GHz VCE = 2 V; IC = 5 mA; f = 1.8 GHz; Γs = Γopt 0.4 dB VCE = 2 V; IC = 5 mA; f = 2.4 GHz; Γs = Γopt 0.45 dB VCE = 2 V; IC = 5 mA; f = 5.8 GHz; Γs = Γopt 0.7 dB VCE = 2 V; IC = 5 mA; f = 12 GHz; Γs = Γopt 1.0 dB VCE = 2 V; IC = 25 mA; f = 1.8 GHz 26.6 dB VCE = 2 V; IC = 25 mA; f = 2.4 GHz 25.5 dB VCE = 2 V; IC = 25 mA; f = 12 GHz 13 dB VCE = 2 V; IC = 25 mA; f = 5.8 GHz 17 dB Quick reference data Transition frequency as a function of collector current (typical values) Gain as a function of frequency (typical values) www.nxp.com ©2006 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. Date of release: October 2006 The information presented in this document does not form part of any quotation or contract, is believed to be accurate and Document order number: 9397 750 15784 reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Printed in the Netherlands Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.