Transmissive Photosensors (Photo Interrupters) CNZ1002 Photo Interrupter A Slit width (0.5) (1.5) ,,,, For contactless SW, object detection A' Overview +0.1 3.8 –0.2 1.45 0.9 1.45 (1.0) Ultraminiature : 4.0 × 3.8 mm (height : 5.1 mm) Fast response : tr, tf = 35 µs (typ.) 4.0 (C0.5) Device center Gate the rest 0.3 max. 3.9 4.0 min. 5.1 2.8 Features SEC. A-A' (C0.3) 2-0.25 *2.54 1 Not soldered 1.0 max. CNZ1002 is an ultraminiature, highly reliable transmissive photosensor in which a high efficiency GaAs infrared light emitting diode chip and a high sensitivity Si phototransistor chip are integrated in a double molded resin package. Unit : mm 3 ø1.5 +0.1 –0 2-0.4 *2.54 2 4 Highly precise position detection : 0.25 mm 1 3 2 4 Pin connection (Note) 1. Tolerance unless otherwise specified is ±0.2 2. ( ) Dimension is reference 3. * is dimension at the root of leads 4. Burrs should be less than 0.15mm Gap width : 0.9 mm Absolute Maximum Ratings (Ta = 25˚C) Parameter Symbol Ratings Reverse voltage (DC) Input (Light Forward current (DC) emitting diode) Power dissipation 6 Unit IF 50 mA PD*1 75 mW IC 20 mA Output (Photo Collector to emitter voltage VCEO transistor) Emitter to collector voltage VECO 35 V 6 V Collector power dissipation PC*2 75 mW Operating ambient temperature Topr –25 to +85 ˚C Storage temperature Tstg – 40 to +100 ˚C Temperature Soldering temperature Tsol *3 *1 Input power derating ratio is 1.0mW/˚C at Ta ≥ 25˚C. *2 Output power derating ratio is 1.0mW/˚C at Ta ≥ 25˚C. *3 Soldering time is within 5 seconds. V 260 , ,,, ,,, Collector current VR more than 1mm Soldering bath ˚C Electrical Characteristics (Ta = 25˚C) Parameter Symbol Conditions Forward voltage (DC) Input characteristics Reverse current (DC) VF IF = 20mA IR VR = 3V Output characteristics Collector cutoff current ICEO Collector current typ max 1.2 1.4 V 10 µA VCE = 20V IC VCE = 5V, IF = 1.5mA Transfer characteristics Collector to emitter saturation voltage VCE(sat) IF = 3mA, IC = 30µA Response time tr , tf* VCC = 5V, IC = 0.1mA, RL = 1000Ω * min 65 100 nA 480 µA 0.4 35 Unit V µs Switching time measurement circuit Sig.IN VCC (Input pulse) Sig.OUT (Output pulse) RL ,, ,, 50Ω 90% 10% td tr tf td : Delay time tr : Rise time (Time required for the collector current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector current to decrease from 90% to 10% of its initial value) 1 Transmissive Photosensors (Photo Interrupters) IF , IC — Ta IF — VF 1.6 Ta = 25˚C IF 30 IC 10 VF (V) 1.2 40 30 20 10mA 1mA Forward voltage 40 20 IF = 50mA 50 IF (mA) 50 0.8 0.4 10 0 20 40 60 80 0 100 0 0.4 Ambient temperature Ta (˚C ) 0.8 1.6 2.0 0 – 40 – 20 2.4 Forward voltage VF (V) IC — IF 0 VCE = 5V Ta = 25˚C IC (mA) 4 Collector current 3 2 40 60 80 100 IC — Ta IC — VCE 3 20 Ambient temperature Ta (˚C ) 120 Ta = 25˚C IF = 15mA VCE = 5V IF = 5mA IC (%) 5 1.2 2 100 80 Relative output current 0 – 25 IC (mA) VF — Ta 60 Forward current Forward current, collector current IF , IC (mA) 60 Collector current CNZ1002 10mA 1 5mA 1 60 40 20 2mA 0 0 5 10 15 20 0 25 Forward current IF (mA) 0 1 2 3 4 5 0 – 40 – 20 6 Collector to emitter voltage VCE (V) ICEO — Ta 0 tr — IC 40 60 80 100 tf — IC 10 3 1 20 Ambient temperature Ta (˚C ) 10 3 VCC = 5V Ta = 25˚C VCE = 20V VCC = 5V Ta = 25˚C 1kΩ 10 100Ω 1 Sig.IN VCC 0 20 40 60 80 Ambient temperature Ta (˚C ) 2 100 tr , ,, 10 –5 – 40 – 20 Sig. OUT RL 10 –1 10 –2 10 –1 1kΩ 10 100Ω 1 10 –4 Sig. OUT 50Ω RL = 2kΩ td 90% 10% tf 1 Collector current IC (mA) 10 Sig.IN Sig. OUT 50Ω VCC Sig. OUT RL ,, 10 –3 RL = 2kΩ Fall time 10 –2 tf (µs) 10 2 tr (µs) 10 2 Rise time Dark current ICEO (µA) 10 –1 10 –1 10 –2 10 –1 tr td 90% 10% tf 1 Collector current IC (mA) 10 CNZ1002 Transmissive Photosensors (Photo Interrupters) IC — d (1) IC — d (2) 100 100 80 Criterion 0 d 60 40 20 0 0 1 2 3 Distance d (mm) 4 , ,,, VCE = 5V Ta = 25˚C IF = 1.5mA Relative output current IC (%) Relative output current IC (%) VCE = 5V Ta = 25˚C IF = 1.5mA 80 Criterion 0 d 60 40 20 0 0 0.5 1.0 1.5 2.0 2.5 Distance d (mm) 3