Reflective Photosensors (Photo Reflectors) CNZ2253 Reflective Photosensor Mark for indicating LED side 7.5±0.2 (3.2) 4.0±0.2 CNZ2253 is a photosensor detecting the change of reflective light in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high sensitivity Si Darlington phototransistor is used as the light detecting element. The two elements are located parallel in the same direction and objects are detected when passing in front of the device. 10.2 min. 6.0±0.2 1.7±0.2 Small size and light weight Applications ø2.2±0.2 (7.2) Detection of paper, film and cloth Optical mark reading Detection of position and edge Detection of coin and bill 2 1 Absolute Maximum Ratings (Ta = 25˚C) Parameter Symbol Ratings Reverse voltage (DC) Input (Light Forward current (DC) emitting diode) Power dissipation 3 3 V IF 50 mA PD*1 75 mW Collector to emitter voltage VCEO 20 V Output (Photo Emitter to collector voltage transistor) Collector current VECO 5 V IC 30 mA Collector power dissipation PC*2 100 mW Operating ambient temperature Topr –25 to +85 ˚C Storage temperature Tstg –30 to +100 ˚C 4 (Note) 1 2 3 4 1. ( ) Dimension is reference Pin connection 2. * is dimension at the root of leads Unit VR ø0.45±0.05 ø0.3±0.05 *2-0.9±0.15 , ,, Start, end mark detection of magnetic tape Temperature 0.5 10.6±0.3 9.6±0.3 Features High sensitivity Unit : mm 3.0±0.2 Overview *1 Input power derating ratio is 1.0 mW/˚C at Ta ≥ 25˚C. *2 Output power derating ratio is 1.34 mW/˚C at Ta ≥ 25˚C. Electrical Characteristics (Ta = 25˚C) Parameter Symbol Forward voltage (DC) Input Reverse current (DC) characteristics Capacitance between terminals Output characteristics Collector cutoff current Conditions VF IF = 50mA IR VR = 3V Ct VR = 0V, f = 1MHz ICEO C classifications *1 Class Q R S IC (mA) 3 to 9 6 to 18 12 to 30 *4 Unit 1.5 V 10 µA pF Time required for the collector current to increase from 10% to 90% of its final value. Time required for the collector current to decrease from 90% to 10% of its initial value. tr 3 0.5 µA 30 mA µs 150 1.5 V Transfer characteristics measurement circuit (Ambient light is shut off completely) IC VCC ,,,, ,,,,, ,, ,,, , IF *3 max 1.2 VCE = 10V Transfer tr*3 , tf*4 VCC = 10V, IC = 1mA, RL = 100Ω characteristics Response time Collector to emitter saturation voltage VCE(sat) IF = 50mA, IC = 1mA *1 I typ 50 IC*1*2 VCC = 5V, IF = 10mA, RL = 100Ω Collector current min d = 3 mm RL 90% 10% tf Standard white paper (Reflective ratio 90%) 1 CNZ2253 Reflective Photosensors (Photo Reflectors) IF , IC — Ta IF — VF 1.6 Ta = 25˚C IF IC 30 20 10 40 Forward voltage 40 VF (V) 50 IF (mA) 50 30 20 60 80 0 100 0 1.6 2.0 0 – 40 – 20 2.4 0 10 1 10 2 60 80 100 IC — Ta 10 2 IF = 20mA 10 10mA 1 1 120 80 40 0 – 40 – 20 10 2 10 VCC = 5V IF = 10mA RL = 100Ω Collector to emitter voltage VCE (V) 0 tr — IC 40 60 80 100 IC — d 10 4 16 VCC = 10V Ta = 25˚C VCE = 10V 10 2 10 3 RL = 1kΩ tr (µs) Rise time 20 Ambient temperature Ta (˚C ) 500Ω 100Ω 10 2 10 VCC = 5V Ta = 25˚C RL = 100Ω IF = 1.5mA 12 , , ICEO — Ta 1 40 160 10 –1 10 –1 10 3 10 20 Ambient temperature Ta (˚C ) IC (%) IC (mA) 10 2 Collector current IC (mA) 1.2 Ta = 25˚C 10 3 ICEO (µA) 0.4 IC — VCE VCC = 5V Ta = 25˚C RL = 100Ω 10 0.8 10 3 Forward current IF (mA) Dark current 10mA 0.8 Forward voltage VF (V) IC — IF 10 3 1 0.4 Relative output current 40 IC (mA) 20 Collector current 0 Ambient temperature Ta (˚C ) 10 –1 IF = 50mA 1.2 10 0 – 25 Collector current VF — Ta 60 Forward current Forward current, collector current IF , IC (mA) 60 d 8 4 10 –1 10 –2 – 40 – 20 0 20 40 60 80 Ambient temperature Ta (˚C ) 2 100 1 10 –2 10 –1 1 Collector current IC (mA) 10 0 0 2 4 6 Distance d (mm) 8