VS-GB150TH120N Datasheet

VS-GB150TH120N
www.vishay.com
Vishay Semiconductors
Molding Type Module IGBT,
2-in-1 Package, 1200 V and 150 A
FEATURES
• Low VCE(on) SPT + IGBT technology
• 10 μs short circuit capability
• VCE(on) with positive temperature coefficient
• Maximum junction temperature 150 °C
• Low inductance case
• Fast and soft reverse recovery antiparallel FWD
Double INT-A-PAK
• Isolated copper baseplate using DCB (Direct Copper
Bonding) technology
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
VCES
1200 V
TYPICAL APPLICATIONS
IC at TC = 80 °C
150 A
• Inverter for motor drive
VCE(on) (typical)
at IC = 150 A, 25 °C
1.9 V
Speed
8 kHz to 30 kHz
Package
Double INT-A-PAK
Circuit
Half bridge
• AC and DC servo drive amplifier
• Uninterruptible power supply (UPS)
DESCRIPTION
Vishay’s IGBT power module provides ultra low conduction
loss as well as short circuit ruggedness. It is designed for
applications such as general inverters and UPS.
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
Collector to emitter voltage
VCES
1200
Gate to emitter voltage
VGES
± 20
Collector current
Pulsed collector current
IC
ICM
(1)
UNITS
V
TC = 25 °C
300
TC = 80 °C
150
tp = 1 ms
300
TC = 80 °C
150
A
Diode continuous forward current
IF
Diode maximum forward current
IFM
tp = 1 ms
300
Maximum power dissipation
PD
TJ = 150 °C
1008
W
Short circuit withstand time
tSC
TJ = 125 °C
10
μs
2500
V
RMS isolation voltage
VISOL
f = 50 Hz, t = 1 min
Note
(1) Repetitive rating: pulse width limited by maximum junction temperature.
Revision: 10-Jun-15
Document Number: 94760
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-GB150TH120N
www.vishay.com
Vishay Semiconductors
IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)
PARAMETER
Collector to emitter breakdown voltage
SYMBOL
V(BR)CES
TEST CONDITIONS
TJ = 25 °C
MIN.
TYP.
MAX.
1200
-
-
VGE = 15 V, IC = 150 A, TJ = 25 °C
-
1.90
2.35
VGE = 15 V, IC = 150 A, TJ = 125 °C
-
2.10
-
5.0
6.2
7.0
UNITS
Collector to emitter voltage
VCE(on)
V
Gate to emitter threshold voltage
VGE(th)
VCE = VGE, IC = 6 mA, TJ = 25 °C
Collector cut-off current
ICES
VCE = VCES, VGE = 0 V, TJ = 25 °C
-
-
5.0
mA
Gate to emitter leakage current
IGES
VGE = VGES, VCE = 0 V, TJ = 25 °C
-
-
400
nA
UNITS
SWITCHING CHARACTERISTICS
PARAMETER
Turn-on delay time
Rise time
Turn-off delay time
SYMBOL
MIN.
TYP.
MAX.
td(on)
-
336
-
tr
-
75
-
-
346
-
td(off)
TEST CONDITIONS
VCC = 600 V, IC = 150 A, Rg = 4.7 ,
VGE = ± 15 V, TJ = 25 °C
-
182
-
Turn-on switching loss
Eon
-
7.25
-
Turn-off switching loss
Eoff
-
9.30
-
Turn-on delay time
td(on)
-
346
-
tr
-
77
-
-
389
-
Fall time
Rise time
Turn-off delay time
Fall time
tf
td(off)
tf
VCC = 600 V, IC = 150 A, Rg = 4.7 ,
VGE = ± 15 V, TJ = 125 °C
-
322
Turn-on switching loss
Eon
-
9.95
-
Turn-off switching loss
Eoff
-
16.0
-
Input capacitance
Cies
Output capacitance
Coes
Reverse transfer capacitance
Cres
SC data
Internal gate resistance
Stray inductance
Module lead resistance, terminal to chip
ISC
VGE = 0 V, VCE = 25 V, f = 1.0 MHz
tsc  10 μs, VGE = 15 V, TJ = 125 °C, 
VCC = 900 V, VCEM  1200 V
RGINT
LCE
RCC’+EE’
TC = 25 °C
ns
mJ
ns
mJ
-
11.0
-
-
0.80
-
-
0.52
-
-
890
-
A
-
1.5
-

-
-
20
nH
-
0.35
-
m
UNITS
nF
DIODE ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Diode forward voltage
VF
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current
Irr
Diode reverse recovery energy
Erec
TEST CONDITIONS
IF = 150 A
IF = 150 A, VR = 600 V,
dI/dt = -2360 A/μs,
VGE = -15 V
MIN.
TYP.
MAX.
TJ = 25 °C
-
1.80
2.20
TJ = 125 °C
-
1.85
-
TJ = 25 °C
-
16.2
-
TJ = 125 °C
-
26.6
-
TJ = 25 °C
-
138
-
TJ = 125 °C
-
166
-
TJ = 25 °C
-
7.48
-
TJ = 125 °C
-
13.4
-
V
μC
A
mJ
Revision: 10-Jun-15
Document Number: 94760
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-GB150TH120N
www.vishay.com
Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
TJ
-
-
150
TSTG
-40
-
125
-
-
0.124
-
-
0.174
-
0.035
-
Operating junction temperature range
Storage temperature range
TEST CONDITIONS
°C
IGBT
Junction to case
Diode
Case to sink
RthJC
Conductive grease applied
RthCS
Power terminal screw: M6
2.5 to 5.0
Mounting screw: M6
3.0 to 5.0
Mounting torque
K/W
Nm
Weight
300
300
40
VGE = 15 V
30
TJ = 25 °C
25
150
E (mJ)
200
g
VCC = 600 V
Rg = 4.7 Ω
VGE = ± 15 V
TJ = 125 °C
35
250
IC (A)
UNITS
TJ =125 °C
20
15
100
10
50
5
0
0
0
0.5
1
1.5
2
2.5
3
100
150
200
250
VCE (V)
IC (A)
Fig. 1 - IGBT Typical Output Characteristics
Fig. 3 - IGBT Switching Loss vs. IC
300
300
80
VCE = 20 V
VCC = 600 V
IC = 150 A
VGE = ± 15 V
TJ = 125 °C
70
250
60
200
TJ =125 °C
150
50
E (mJ)
IC (A)
50
0
3.5
TJ = 25 °C
Eon
40
30
100
20
Eoff
50
10
0
0
5
6
7
8
9
10
11
12
13
0
5
10
15
20
25
30
35
40
VGE (V)
Rg (Ω)
Fig. 2 - IGBT Typical Transfer Characteristics
Fig. 4 - IGBT Switching Loss vs. Rg
45
Revision: 10-Jun-15
Document Number: 94760
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-GB150TH120N
www.vishay.com
Vishay Semiconductors
350
300
250
IC, Module
IC (A)
200
150
100
Rg = 4.7 Ω
VGE = ± 15 V
TJ = 125 °C
50
0
0
300
600
900
1200
1500
VCE (V)
Fig. 5 - RBSOA
ZthJC (K/W)
100
10-1
IGBT
10-2
10-3
10-3
10-2
10-1
100
101
t (s)
Fig. 6 - IGBT Transient Thermal Impedance
30
300
250
25
TJ = 25 °C
150
20
E (mJ)
200
IF (A)
VCC = 600 V
Rg = 4.7 Ω
VGE = - 15 V
TJ = 125 °C
TJ =125 °C
15
100
10
50
5
0
0
0
0.5
1
1.5
2
2.5
3
3.5
0
50
100
150
200
250
VF (V)
IF (A)
Fig. 7 - Diode Typical Forward Characteristics
Fig. 8 - Diode Switching Loss vs. IF
300
Revision: 10-Jun-15
Document Number: 94760
4
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-GB150TH120N
www.vishay.com
Vishay Semiconductors
15
12.5
EREC
E (mJ)
10
7.5
5
VCC = 600 V
IC = 150 A
VGE = - 15 V
TJ = 125 °C
2.5
0
0
5
10
15
20
25
30
35
40
45
Rg (Ω)
Fig. 9 - Diode Switching Loss vs.Rg
100
ZthJC (K/W)
Diode
10-1
10-2
10-3
10-2
10-1
100
101
t (s)
Fig. 10 - Diode Transient Thermal Impedance
CIRCUIT CONFIGURATION
6
7
1
2
3
5
4
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95525
Revision: 10-Jun-15
Document Number: 94760
5
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
Double INT-A-PAK
DIMENSIONS in millimeters (inches)
26
23 ± 0.3
6
7.2 ± 0.6
31 ± 0.5
2.8 x 0.5
16
3-M6
30.5 ± 0.5
Mounting depth max. 11
Ø
6.
4
±
28 ± 0.3
28 ± 0.3
20.1
0.
2
6
22
35.4
27 ± 0.4
3
15 ± 0.4
2
30
48 ± 0.4
61.4
1
6
93 ± 0.4
106.4
Revision: 27-May-13
Document Number: 95525
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
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Document Number: 91000