VS-GB300TH120U Datasheet

VS-GB300TH120U
www.vishay.com
Vishay Semiconductors
Molding Type Module IGBT,
2-in-1 Package, 1200 V and 300 A
FEATURES
• 10 μs short circuit capability
• VCE(on) with positive temperature coefficient
• Maximum junction temperature 150 °C
• Low switching losses
• Rugged with ultrafast performance
• Low inductance case
• Fast and soft reverse recovery antiparallel FWD
Double INT-A-PAK
• Isolated copper baseplate using DCB (Direct Copper
Bonding) technology
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
VCES
1200 V
IC at TC = 80 °C
300 A
VCE(on) (typical)
at IC = 300 A, 25 °C
3.10 V
• Inductive heating
Speed
8 kHz to 30 kHz
• Electronic welder
Package
Double INT-A-PAK
Circuit
Half bridge
TYPICAL APPLICATIONS
• Switching mode power supplies
DESCRIPTION
Vishay’s IGBT power module provides ultra low conduction
loss as well as short circuit ruggedness. It is designed for
applications such as electronic welder and inductive
heating.
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
Collector to emitter voltage
VCES
1200
Gate to emitter voltage
VGES
± 20
Collector current
Pulsed collector current
IC
ICM (1)
UNITS
V
TC = 25 °C
530
TC = 80 °C
300
tp = 1 ms
600
TC = 80 °C
300
A
Diode continuous forward current
IF
Diode maximum forward current
IFM
tp = 1 ms
600
Maximum power dissipation
PD
TJ = 150 °C
2119
W
Short circuit withstand time
tSC
TJ = 125 °C
10
μs
2500
V
RMS isolation voltage
VISOL
f = 50 Hz, t = 1 min
Note
(1) Repetitive rating: pulse width limited by maximum junction temperature.
Revision: 12-Jun-15
Document Number: 94751
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-GB300TH120U
www.vishay.com
Vishay Semiconductors
IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)
PARAMETER
Collector to emitter breakdown voltage
SYMBOL
V(BR)CES
TEST CONDITIONS
TJ = 25 °C
MIN.
TYP.
MAX.
1200
-
-
VGE = 15 V, IC = 300 A, TJ = 25 °C
-
3.10
3.60
VGE = 15 V, IC = 300 A, TJ = 125 °C
-
3.45
-
4.4
5.2
6.0
UNITS
Collector to emitter voltage
VCE(on)
V
Gate to emitter threshold voltage
VGE(th)
VCE = VGE, IC = 3.0 mA, TJ = 25 °C
Collector cut-off current
ICES
VCE = VCES, VGE = 0 V, TJ = 25 °C
-
-
5.0
mA
Gate to emitter leakage current
IGES
VGE = VGES, VCE = 0 V, TJ = 25 °C
-
-
400
nA
UNITS
SWITCHING CHARACTERISTICS
PARAMETER
Turn-on delay time
Rise time
Turn-off delay time
SYMBOL
MIN.
TYP.
MAX.
td(on)
-
662
-
tr
-
142
-
-
633
-
td(off)
TEST CONDITIONS
VCC = 600 V, IC = 300 A, Rg = 3.3 ,
VGE = ± 15 V, TJ = 25 °C
-
117
-
Turn-on switching loss
Eon
-
19.7
-
Turn-off switching loss
Eoff
-
22.4
-
Turn-on delay time
td(on)
-
660
-
tr
-
143
-
-
665
-
Fall time
Rise time
Turn-off delay time
Fall time
tf
td(off)
tf
VCC = 600 V, IC = 300 A, Rg = 3.3 ,
VGE = ± 15 V, TJ = 125 °C
-
137
-
Turn-on switching loss
Eon
-
24.9
-
Turn-off switching loss
Eoff
-
28.4
-
Input capacitance
Cies
Output capacitance
Coes
Reverse transfer capacitance
Cres
SC data
Internal gate resistance
Stray inductance
Module lead resistance, terminal to chip
ISC
VGE = 0 V, VCE = 30 V, f = 1.0 MHz
tsc  10 μs, VGE = 15 V, TJ = 125 °C, 
VCC = 600 V, VCEM  1200 V
Rgint
LCE
RCC’+EE’
TC = 25 °C
ns
mJ
ns
mJ
-
25.3
-
-
2.25
-
-
0.91
-
-
2550
-
A
-
1.2
-

-
-
18
nH
-
0.32
-
m
UNITS
nF
DIODE ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Diode forward voltage
VF
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current
Irr
Diode reverse recovery energy
Erec
TEST CONDITIONS
IF = 300 A
IF = 300 A, VR = 600 V,
dI/dt = -2125 A/μs,
VGE = -15 V
MIN.
TYP.
MAX.
TJ = 25 °C
-
1.82
2.25
TJ = 125 °C
-
1.95
-
TJ = 25 °C
-
21.5
-
TJ = 125 °C
-
32.4
-
TJ = 25 °C
-
178
-
TJ = 125 °C
-
225
-
TJ = 25 °C
-
10.4
-
TJ = 125 °C
-
16.6
-
V
μC
A
mJ
Revision: 12-Jun-15
Document Number: 94751
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-GB300TH120U
www.vishay.com
Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
TJ
-
-
150
TSTG
-40
-
125
-
-
0.059
-
-
0.107
-
0.035
-
Operating junction temperature range
Storage temperature range
TEST CONDITIONS
°C
IGBT
Junction to case
RthJC
Diode
Case to sink
RthCS
Conductive grease applied
Power terminal screw: M6
2.5 to 5.0
Mounting screw: M6
3.0 to 6.0
Mounting torque
300
g
100
600
VCC = 600 V
Rg = 3.3 Ω
VGE = ± 15 V
TJ = 125 °C
90
500
80
300
Eon, Eoff (mJ)
25 °C
400
IC (A)
K/W
Nm
Weight
125 °C
200
70
60
50
40
Eon
30
Eoff
20
100
VGE = 15 V
10
0
0
0
1
2
3
4
5
6
0
100
200
300
VCE (V)
400
500
600
IC (A)
Fig. 1 - IGBT Typical Output Characteristics
Fig. 3 - IGBT Switching Loss vs. IC
180
600
VCE = 20 V
VCC = 600 V
IC = 600 A
VGE = ± 15 V
TJ = 125 °C
160
500
EON, EOFF (mJ)
140
400
IC (A)
UNITS
125 °C
300
200
25 °C
120
100
Eon
80
Eoff
60
40
100
20
0
0
5
6
7
8
9
10
11
VGE (V)
Fig. 2 - IGBT Typical Transfer Characteristics
0
5
10
15
20
25
30
35
Rg (Ω)
Fig. 4 - IGBT Switching Loss vs. Rg
Revision: 12-Jun-15
Document Number: 94751
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-GB300TH120U
www.vishay.com
Vishay Semiconductors
700
600
IC, module
IC (A)
500
400
300
200
Rg = 3.3 Ω
VGE = ± 15 V
TJ = 125 °C
100
0
0
300
600
900
1200
1500
VCE (V)
Fig. 5 - RBSOA
ZthJC - Thermal Impedance (K/W)
1
0.1
IGBT
0.01
0.001
0.0001
0.001
0.1
0.01
1
t (s)
Fig. 6 - IGBT Transient Thermal Impedance
35
600
30
500
25 °C
300
E (mJ)
IF (A)
25
400
125 °C
Erec
20
15
200
VCC = 600 V
Rg = 3.3 Ω
VGE = - 15 V
TJ = 125 °C
10
100
5
0
0
0
0.5
1
1.5
2
2.5
3
0
100
200
300
400
500
VF (V)
IF (A)
Fig. 7 - Diode Typical Forward Characteristics
Fig. 8 - Diode Switching Loss vs. IF
600
Revision: 12-Jun-15
Document Number: 94751
4
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-GB300TH120U
www.vishay.com
Vishay Semiconductors
24
21
E (mJ)
18
15
Erec
12
9
VCC = 600 V
IC = 300 A
VGE = - 15 V
TJ = 125 °C
6
3
0
0
5
10
15
20
25
30
35
Rg (Ω)
Fig. 9 - Diode Switching Loss vs. Gate Resistance
1
ZthJC (K/W)
Diode
0.1
0.01
0.001
0.001
0.01
0.1
1
10
t (s)
Fig. 10 - Diode Transient Thermal Impedance
CIRCUIT CONFIGURATION
6
7
1
2
3
5
4
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95525
Revision: 12-Jun-15
Document Number: 94751
5
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
Double INT-A-PAK
DIMENSIONS in millimeters (inches)
26
23 ± 0.3
6
7.2 ± 0.6
31 ± 0.5
2.8 x 0.5
16
3-M6
30.5 ± 0.5
Mounting depth max. 11
Ø
6.
4
±
28 ± 0.3
28 ± 0.3
20.1
0.
2
6
22
35.4
27 ± 0.4
3
15 ± 0.4
2
30
48 ± 0.4
61.4
1
6
93 ± 0.4
106.4
Revision: 27-May-13
Document Number: 95525
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000