VS-GT50TP120N Datasheet

VS-GT50TP120N
www.vishay.com
Vishay Semiconductors
Molding Type Module IGBT,
2 in 1 Package, 1200 V, 50 A
FEATURES
• Low VCE(on) trench IGBT technology
• Low switching losses
• 10 μs short circuit capability
• VCE(on) with positive temperature coefficient
• Maximum junction temperature 175 °C
• Low inductance case
• Fast and soft reverse recovery antiparallel FWD
• Isolated copper baseplate using DCB (Direct Copper
Bonding) technology
INT-A-PAK
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912 
PRODUCT SUMMARY
TYPICAL APPLICATIONS
VCES
1200 V
IC at TC = 80 °C
50 A
VCE(on) (typical)
at IC = 50 A, 25 °C
1.65 V
Speed
8 kHz to 30 kHz
Package
INT-A-PAK
DESCRIPTION
Circuit
Half bridge
Vishay’s IGBT power module provides ultra low conduction
loss as well as short circuit ruggedness. It is designed for
applications such as UPS and SMPS.
• UPS (Uninterruptable Power Supply)
• Electronic welders
• Switching mode power supplies
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
Collector to emitter voltage
VCES
1200
Gate to emitter voltage
VGES
± 20
Collector current
Pulsed collector current
TC = 25 °C
IC
ICM (1)
50
tp = 1 ms
100
IF
50
Diode maximum forward current
IFM (1)
100
RMS isolation voltage
PD
VISOL
V
100
TC = 80 °C
Diode continuous forward current
Maximum power dissipation
UNITS
A
TJ = 175 °C
405
W
f = 50 Hz, t = 1 min
2500
V
Note
(1) Repetitive rating: pulse width limited by maximum junction temperature.
IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)
PARAMETER
Collector to emitter breakdown voltage
SYMBOL
V(BR)CES
Collector to emitter voltage
VCE(on)
Gate to emitter threshold voltage
TEST CONDITIONS
TJ = 25 °C
MIN.
TYP.
MAX.
1200
-
-
VGE = 15 V, IC = 50 A, TJ = 25 °C
-
1.90
2.35
VGE = 15 V, IC = 50 A, TJ = 175 °C
-
2.50
7.5
UNITS
V
VGE(th)
VCE = VGE, IC = 1.4 mA, TJ = 25 °C
5.0
5.5
Collector cut-off current
ICES
VCE = VCES, VGE = 0 V, TJ = 25 °C
-
-
5.0
mA
Gate to emitter leakage current
IGES
VGE = VGES, VCE = 0 V, TJ = 25 °C
-
-
400
nA
Revision: 11-Jun-15
Document Number: 94824
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-GT50TP120N
www.vishay.com
Vishay Semiconductors
SWITCHING CHARACTERISTICS
PARAMETER
SYMBOL
Turn-on delay time
MIN.
TYP.
MAX.
td(on)
-
148
-
tr
-
84
-
td(off)
-
245
-
Rise time
Turn-off delay time
Fall time
tf
TEST CONDITIONS
VCC = 600 V, IC = 50 A, Rg = 15 ,
VGE = ± 15 V, TJ = 25 °C
-
251
-
Turn-on switching loss
Eon
-
5.51
-
Turn-off switching loss
Eoff
-
2.70
-
Turn-on delay time
td(on)
-
263
-
tr
-
81
-
td(off)
-
256
-
-
292
-
Rise time
Turn-off delay time
Fall time
tf
VCC = 600 V, IC = 50 A, Rg = 15 ,
VGE = ± 15 V, TJ = 125 °C
Turn-on switching loss
Eon
-
6.63
-
Turn-off switching loss
Eoff
-
3.25
-
Input capacitance
Cies
Output capacitance
Coes
Reverse transfer capacitance
Cres
SC data
tp  10 μs, VGE = 15 V, TJ = 125 °C, 
VCC = 600 V, VCEM  1200 V
ISC
-
6.24
-
-
0.23
-
-
0.15
-
-
450
-
ns
mJ
ns
mJ
nF
A
LCE
-
-
30
nH
RCC’+EE’
-
0.75
-
m
UNITS
Stray inductance
Module lead resistance, terminal to chip
VGE = 0 V, VCE = 30 V, f = 1.0 MHz
UNITS
DIODE ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Forward voltage
VF
Reverse recovery charge
Qrr
Peak reverse recovery current
Irr
Reverse recovery energy
TEST CONDITIONS
IF = 50 A
IF = 50 A, VR = 600 V,
dIF/dt = -654 A/μs
VGE = -15 V
Erec
MIN.
TYP.
MAX.
TJ = 25 °C
-
1.85
2.25
TJ = 125 °C
-
1.95
-
TJ = 25 °C
-
3.1
-
TJ = 125 °C
-
6.1
-
TJ = 25 °C
-
24
-
TJ = 125 °C
-
31
-
TJ = 25 °C
-
0.98
-
TJ = 125 °C
-
2.06
-
V
μC
A
mJ
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Operating junction temperature
Storage temperature range
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
TJ
-
-
175
°C
TStg
-40
-
125
°C
IGBT
Junction to case
Diode
Case to sink (Conductive grease applied)
RthJC
RthCS
-
-
0.37
-
-
0.49
-
0.05
-
Power terminal screw: M5
2.5 to 5.0
Mounting screw: M6
3.0 to 5.0
Mounting torque
Weight
K/W
Nm
Weight of module
-
150
-
g
Revision: 11-Jun-15
Document Number: 94824
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-GT50TP120N
www.vishay.com
Vishay Semiconductors
100
20
VGE = 15 V
90
80
16
14
25 °C
60
Eon
12
E (mJ)
IC (A)
70
50
40
175 °C
10
8
30
6
20
4
10
2
0
Eoff
0
0
1
2
3
0
4
25
50
75
100
VCE (V)
IC (A)
Fig. 1 - IGBT Typical Output Characteristics
Fig. 3 - IGBT Switching Loss vs. IC
20
100
VCE = 50 V
90
VCC = 600 V
IC = 50 A
VGE = ± 15 V
TJ = 125 °C
18
80
16
70
14
60
Eon
12
175 °C
50
E (mJ)
IC (A)
VCC = 600 V
Rg =15 Ω
VGE = ± 15 V
TJ = 125 °C
18
25 °C
40
10
8
30
6
20
4
10
2
Eoff
0
0
0
2
4
6
8
10
0
12
10
20
30
40
50
60
Rg (Ω)
VGE (V)
Fig. 2 - IGBT Transfer Characteristics
Fig. 4 - IGBT Switching Loss vs. RG
120
Chip
100
Module
IC (A)
80
60
40
Rg = 15 Ω
VGE = ± 15 V
TJ = 125 °C
20
0
0
350
700
1050
1400
VCE (V)
Fig. 5 - RBSOA
Revision: 11-Jun-15
Document Number: 94824
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-GT50TP120N
www.vishay.com
Vishay Semiconductors
100
ZthJC (K/W)
IGBT
10-1
10-2
10-3
10-3
10-2
10-1
10-0
101
t (s)
Fig. 6 - IGBT Transient Thermal Impedance
100
3.5
90
80
2
Erec
25 °C
70
60
125 °C
E (mJ)
IF (A)
2.5
VCC = 600 V
Rg = 15 Ω
VGE = - 15 V
TJ = 125 °C
3
50
40
1.5
30
1
20
0.5
10
0
0
1
2
0
3
0
25
VF (V)
50
75
100
IF (A)
Fig. 7 - Diode Forward Characteristics
Fig. 8 - Diode Switching Loss vs. IF
3
2.5
E (mJ)
2
Erec
1.5
1
VCC = 600 V
IF = 50 A
VGE = - 15 V
TJ = 125 °C
0.5
0
0
10
20
30
40
50
60
Rg (Ω)
Fig. 9 - Diode Switching Loss vs. RG
Revision: 11-Jun-15
Document Number: 94824
4
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-GT50TP120N
www.vishay.com
Vishay Semiconductors
100
ZthJC (K/W)
Diode
10-1
10-2
10-3
10-2
10-1
100
101
t (s)
Fig. 10 - Diode Transient Thermal Impedance
CIRCUIT CONFIGURATION
6
7
1
2
3
5
4
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95524
Revision: 11-Jun-15
Document Number: 94824
5
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
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Document Number: 91000