VS-150MT060WDF www.vishay.com Vishay Semiconductors MTP IGBT Power Module Primary Dual Forward FEATURES • Buck PFC stage with warp 3 IGBT and FRED Pt® hyperfast diode • Integrated thermistor • Isolated baseplate • Very low stray inductance design for high speed operation • Ultrafast switching IGBT • Designed and qualified for industrial level MTP (Package example) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 BENEFITS PRODUCT SUMMARY • Lower conduction losses and switching losses IGBT, TJ = 150 °C VCES 600 V • Optimized for welding, UPS, and SMPS applications VCE(ON) at 25 °C at 80 A 2.11 V • PCB solderable terminals IC at 80°C 96 A • Direct mounting to heatsink FRED Pt® AP DIODE, TJ = 150 °C VRRM 600 V IF(DC) at 80 °C 11 A VF at 25 °C at 5 A 1.1 V FRED Pt® CHOPPER DIODE, TJ = 150 °C VR 600 V IF(DC) at 80 °C 22 A VF at 25 °C at 60 A 2.07 V Speed 30 kHz to 150 kHz Package MTP Circuit Dual forward ABSOLUTE MAXIMUM RATINGS PARAMETER IGBT VCES Gate to emitter voltage VGE Maximum continuous collector current at VGE = 15 V, TJ = 150 °C maximum Pulse collector current Clamped inductive load current Maximum power dissipation Antiparallel Diode SYMBOL Collector to emitter voltage IC ICM PD Maximum continuous forward current TJ = 150 °C maximum IF(DC) Maximum power dissipation IFSM PD UNITS 600 V ± 20 V 138 TC = 80 °C 96 330 ILM VRRM MAX. TC = 25 °C (1) Repetitive peak reverse voltage Maximum non-repetitive peak current TEST CONDITIONS A 330 TC = 25 °C 543 W 600 V TC = 25 °C 17 TC = 80 °C 11 10 ms sine or 6 ms rectangular pulse, TJ = 25 °C 60 TC = 25 °C 24 A W Revision: 10-Jun-15 Document Number: 95716 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-150MT060WDF www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER Repetitive peak reverse voltage Chopper Diode Maximum continuous forward current TJ = 150 °C maximum Maximum non-repetitive peak current SYMBOL TEST CONDITIONS VRRM IF IFSM MAX. UNITS 600 V TC = 25 °C 33 TC = 80 °C 22 10 ms sine or 6 ms rectangular pulse, TJ = 25 °C 135 TC = 25 °C 57 A W Maximum power dissipation PD Maximum operating junction temperature TJ 150 Storage temperature range TStg -40 to +150 Isolation voltage VISOL TJ = 25 °C, all terminals shorted, f = 50 Hz, t =1 s °C 3500 V Notes • Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. (1) V CC = 300 V, VGE = 15 V, L = 500 μH, Rg = 4.7 , TJ = 150 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted) IGBT PARAMETER SYMBOL Collector to emitter breakdown voltage BVCES Temperature coefficient of breakdown voltage VBR(CES)/TJ Collector to emitter voltage VCE(ON) Gate threshold voltage VGE(th) Chopper Diode MIN. TYP. 600 - - V IC = 1.0 mA (25 °C to 125 °C) - 0.6 - V/°C VGE 15 V, IC = 80 A - 2.11 2.48 VGE = 15 V, lC = 80 A, TJ = 125 °C - 2.43 - VGE = 0 V, IC = 1.5 mA V 3.2 4.4 6.2 V - -12 - mV/°C gfe VCE = 20 V, IC = 80 A - 97 - S Transfer characteristics VGE VCE = 20 V, IC = 80 A - 6.6 - V VGE = 0 V, VCE = 600 V - 8 100 μA Collector to emitter leakage current ICES VGE = 0 V, VCE = 600 V, TJ = 125 °C - 0.1 - mA Gate to emitter leakage IGES VGE = ± 20 V - - ± 250 nA BVRRM IR = 100 μA 600 - - V VGE(th)/TJ Forward transconductance Forward voltage drop VFM Forward voltage drop VFM Blocking voltage Reverse leakage current BVRM IRM VCE = VGE, IC = 750 μA MAX. UNITS VCE = VGE, IC = 1.0 mA (25 °C to 125 °C) Temperature coefficient of threshold voltage Blocking voltage AP Diode TEST CONDITIONS IF = 5 A - 1.1 1.27 IF = 5 A, TJ = 125 °C - 0.96 - IF = 60 A - 2.07 2.53 IF = 60 A, TJ = 125 °C - 1.87 - IR = 100 μA 600 - - VRRM = 600 V - 2 70 VRRM = 600 V, TJ = 125 °C - 12 - V V μA Revision: 10-Jun-15 Document Number: 95716 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-150MT060WDF www.vishay.com Vishay Semiconductors SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise noted) PARAMETER SYMBOL Total gate charge (turn-on) Qg Gate to emitter charge (turn-on) Qge Gate to collector charge (turn-on) Qgc IC = 60 A VCC = 400 V VGE = 15 V MIN. TYP. MAX. - 540 - - 84 - - 192 - Turn-on switching loss Eon - 0.51 - Turn-off switching loss Eoff - 2.66 - - 3.17 - - 173 - Total switching loss Etot Turn-on delay time td(on) IC = 150 A, VCC = 300 V, VGE = 15 V, Rg = 4.7 , L = 500 μH, TJ = 25 °C (1) - 79 - td(off) - 374 - tf - 66 - Turn-on switching loss Eon - 0.66 - Turn-off switching loss Eoff - 2.75 - - 3.41 - - 167 - Rise time tr Turn-off delay time Fall time PFC IGBT TEST CONDITIONS Total switching loss Etot Turn-on delay time td(on) Rise time - 80 - td(off) - 389 - tr Turn-off delay time Fall time IC = 150 A, VCC = 300 V, VGE = 15 V, Rg = 4.7 , L = 500 μH, TJ = 125 °C (1) tf - 69 - Input capacitance Cies - 14 020 - Output capacitance Coes - 1010 - Reverse transfer capacitance Cres - 174 - Reverse bias safe operating area RBSOA VGE = 0 V VCC = 30 V f = 1 MHz IC = 330 A, VCC = 300 V, VP = 600 V, Rg = 4.7 , VGE = 15 V, L = 500 μH, TJ = 150 °C UNITS nC mJ ns mJ ns pF Full square Note (1) Energy losses include “tail” and diode reverse recovery. RECOVERY PARAMETER (TJ = 25 °C unless otherwise noted) PARAMETER AP Diode Chopper Diode SYMBOL Peak reverse recovery current Irr Reverse recovery time trr Reverse recovery charge Qrr Peak reverse recovery current Irr Reverse recovery time trr Reverse recovery charge Qrr Peak reverse recovery current Irr Reverse recovery time trr Reverse recovery charge Qrr TEST CONDITIONS MIN. IF = 10 A dI/dt = 200 A/μs Vrr = 200 V IF = 50 A dI/dt = 200 A/μs Vrr = 200 V IF = 50 A dI/dt = 200 A/μs Vrr = 200 V, TJ = 125 °C TYP. MAX. UNITS - 10 - A - 104 - ns - 537 - nC - 4.7 - A - 73 - ns - 171 - nC - 10.3 - A - 140 - ns - 716 - nC THERMISTOR ELECTRICAL CHARACTERISTICS (TJ = 25 °C unless otherwise noted) PARAMETER MIN. TYP. MAX. UNITS Resistance SYMBOL R TJ = 25 °C TEST CONDITIONS - 30 000 - B value B TJ = 25 °C/TJ = 85 °C - 4000 - K Revision: 10-Jun-15 Document Number: 95716 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-150MT060WDF www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER IGBT Junction to case IGBT thermal resistance AP FRED Pt Junction to case diode thermal resistance FRED Pt Junction to case diode thermal resistance SYMBOL RthJC Case to sink, flat, greased surface per module RthCS MIN. TYP. MAX. - - 0.23 - - 5.1 - - 2.2 UNITS °C/W - 0.06 - °C/W Mounting torque ± 10 % to heatsink (1) - - 4 Nm Approximate weight - 65 - g Note (1) A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. 300 140 250 120 TJ = 25 °C 200 DC 100 IC (A) Allowable Case Temperature (°C) 160 80 60 TJ = 125 °C 150 TJ = 150 °C 100 40 50 20 0 0 0 20 40 60 80 100 120 140 160 0 1.0 2.0 IC - Continuous Collector Current (A) 3.0 4.0 6.0 Fig. 3 - IC vs. VCE (Typical IGBT Output Characteristics, VGE = 15 V) Fig. 1 - Allowable Case Temperature vs. Continuous Collector Current (Maximum IGBT Continuous Collector Current vs. Case Temperature) 300 1000 VGE = 12 V VGE = 15 V VGE = 18 V 250 100 VGE = 9 V IC (A) 200 IC (A) 5.0 VCE (V) 10 150 100 1 50 0 0.1 1 10 100 1000 VCE (V) Fig. 2 - IC vs. VCE (IGBT Reverse BIAS SOA, TJ = 150 °C, VGE = 15 V) 0 1.0 2.0 3.0 4.0 5.0 6.0 VCE (V) Fig. 4 - IC vs. VCE (Typical IGBT Output Characteristics, TJ = 125 °C) Revision: 10-Jun-15 Document Number: 95716 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-150MT060WDF www.vishay.com Vishay Semiconductors 100 160 VCE = 20 V 140 TJ = 125 °C 90 80 120 70 60 TJ = 125 °C 80 IF (A) IC (A) 100 50 40 60 30 TJ = 25 °C 40 TJ = 150 °C 20 20 10 0 0 3 4 5 6 7 TJ = 25 °C 0 8 0.5 1.0 1.5 VGE (V) Fig. 5 - IC vs. VGE (Typical IGBT Transfer Characteristics) 3.0 Allowable Case Temperature (°C) 160 5.0 TJ = 25 °C 4.5 VGEth (V) 2.5 Fig. 8 - IF vs. VFM (Typical Antiparallel Diode Forward Characteristics) 5.5 4.0 3.5 TJ = 125 °C 3.0 2.5 2.0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 140 120 DC 100 80 60 40 20 0 1.0 0 2 4 6 8 10 12 14 16 18 20 IF - Continuous Forward Current (A) IC (mA) Fig. 6 - VGEth vs. IC (Typical IGBT Gate Threshold Voltage) Fig. 9 - Allowable Case Temperature vs. Continuous Forward Current (Maximum Antiparallel Diode Continuous Forward Current vs. Case Temperature) 1 160 TJ = 150 °C 140 TJ = 125 °C 0.1 120 100 0.01 IF (A) ICES (mA) 2.0 VFM (V) TJ = 25 °C 80 60 TJ = 150 °C 0.001 40 TJ = 125 °C 20 0.0001 TJ = 25 °C 0 100 200 300 400 500 600 VCES (V) Fig. 7 - ICES vs. VCES (Typical IGBT Zero Gate Voltage Collector Current) 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VFM (V) Fig. 10 - IF vs. VFM (Typical Chopper Diode Forward Characteristics) Revision: 10-Jun-15 Document Number: 95716 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-150MT060WDF www.vishay.com Vishay Semiconductors 1000 td(off) 140 120 Switching Time (ns) Allowable Case Temperature (°C) 160 DC 100 80 60 40 td(on) 100 tf tr 20 0 10 0 5 10 15 20 25 30 35 0 40 20 40 60 IF - Continuous Forward Current (A) 80 100 120 140 160 IC (A) Fig. 11 - Allowable Case Temperature vs. Continuous Forward Current (Maximum Chopper Diode Continuous Forward Current vs. Case Temperature) Fig. 14 - Switching Time vs. IC (Typical IGBT Switching Time vs. IC) TJ = 125 °C, VCC = 300 V, Rg = 4.7 , VGE = 15 V, L = 500 μH 10 0.1 TJ = 150 °C 9 8 TJ = 125 °C 7 Energy (mJ) IRM (mA) 0.01 TJ = 25 °C 0.001 6 Eoff 5 4 Eon 3 2 1 0 0.0001 100 200 300 400 500 0 600 5 10 15 20 VR (V) 25 30 35 40 45 50 Rg (Ω) Fig. 12 - IRM vs. VR (Typical Chopper Diode Reverse Leakage Current) Fig. 15 - Energy Loss vs. Rg (Typical IGBT Energy Loss vs. Rg) TJ = 125 °C, VCC = 300 V, IC = 150 A, VGE = 15 V, L = 500 μH 3 10 000 Switching Time (ns) 2.5 Energy (mJ) 2 1.5 Eoff 1 Eon 1000 td(off) td(on) tr 100 tf 0.5 0 10 0 20 40 60 80 100 120 140 160 IC (A) Fig. 13 - Energy Loss vs. IC (Typical IGBT Energy Loss vs. IC) TJ = 125 °C, VCC = 300 V, Rg = 4.7 , VGE = 15 V, L = 500 μH 0 5 10 15 20 25 30 35 40 45 50 Rg (Ω) Fig. 16 - Switching Time vs. Rg (Typical IGBT Switching Time vs. Rg) TJ = 125 °C, VCC = 300 V, IC = 150 A, VGE = 15 V, L = 500 μH Revision: 10-Jun-15 Document Number: 95716 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-150MT060WDF www.vishay.com Vishay Semiconductors 200 200 180 180 160 160 TJ = 125 °C 140 trr (ns) trr (ns) TJ = 125 °C 140 120 120 100 TJ = 25 °C 100 80 80 TJ = 25 °C 60 40 60 100 200 300 400 500 100 200 400 500 Fig. 20 - trr vs. dIF/dt (Typical Chopper Diode Reverse Recovery Time vs. dIF/dt) Vrr = 200 V, IF = 50 A 20 30 28 26 24 22 20 18 16 14 12 10 8 6 4 18 16 TJ = 125 °C 14 TJ = 125 °C 12 Irr (A) Irr (A) Fig. 17 - trr vs. dIF/dt (Typical Antiparallel Diode Reverse Recovery Time vs. dIF/dt) Vrr = 200 V, IF = 10 A TJ = 25 °C 10 TJ = 25 °C 8 6 4 2 0 100 200 300 400 100 500 200 dIF/dt (A/μs) 300 400 500 dIF/dt (A/μs) Fig. 18 - Irr vs. dIF/dt (Typical Antiparallel Diode Reverse Recovery Current vs. dIF/dt) Vrr = 200 V, IF = 10 A Fig. 21 - Irr vs. dIF/dt (Typical Chopper Diode Reverse Recovery Current vs. dIF/dt) Vrr = 200 V, IF = 50 A 1900 1200 1100 1700 1000 TJ = 125 °C 1500 TJ = 125 °C 900 800 Qrr (nC) 1300 Qrr (nC) 300 dIF/dt (A/μs) dIF/dt (A/μs) 1100 900 700 600 500 400 TJ = 25 °C 700 TJ = 25 °C 300 200 500 100 300 0 100 200 300 400 500 dIF/dt (A/μs) Fig. 19 - Qrr vs. dIF/dt (Typical Antiparallel Diode Reverse Recovery Charge vs. dIF/dt) Vrr = 200 V, IF = 10 A 100 200 300 400 500 dIF/dt (A/μs) Fig. 22 - Qrr vs dIF/dt (Typical Chopper Diode Reverse Recovery Charge vs. dIF/dt) Vrr = 200 V, IF = 50 A Revision: 10-Jun-15 Document Number: 95716 7 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-150MT060WDF www.vishay.com Vishay Semiconductors ZthJC - Thermal Impedance Junction to Case (°C/W) 1 0.1 0.50 0.20 0.10 0.05 0.02 0.01 DC 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 1 10 t1 - Rectangular Pulse Duration (s) Fig. 23 - ZthJC vs. t1 Rectangular Pulse Duration (Maximum Thermal Impedance ZthJC Characteristics - (IGBT)) ZthJC - Thermal Impedance Junction to Case (°C/W) 10 1 0.50 0.20 0.10 0.05 0.02 0.01 DC 0.1 0.01 0.00001 0.0001 0.001 0.01 0.1 t1 - Rectangular Pulse Duration (s) Fig. 24 - ZthJC vs. t1 Rectangular Pulse Duration (Maximum Thermal Impedance ZthJC Characteristics - (Chopper Diode)) CIRCUIT CONFIGURATION E1 F1 Q1 D1 D3 A7 E6 M2 M3 A1 B1 E7 Th Q4 G6 I1 L1 D2 D4 G7 M7 Revision: 10-Jun-15 Document Number: 95716 8 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-150MT060WDF www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 150 MT 060 W DF 1 2 3 4 5 6 1 - Vishay Semiconductors product 2 - Current rating (150 = 150 A) 3 - Essential part number (MT = MTP package) 4 - Voltage code x 10 = Voltage rating (example: 060 = 600 V) 5 - Die IGBT technology (W = Warp Speed IGBT) 6 - Circuit configuration (DF = Dual forward) LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95383 Revision: 10-Jun-15 Document Number: 95716 9 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors MTP - Full Pin DIMENSIONS in millimeters 3.0 2.1 1.5 z detail 12 ± 0.3 39.5 ± 0.3 6 12 ± 0.3 Ø 1.1 ± 0.025 3 Use self taping screw or M2.5 x X. e.g. M2.5 x 6 or M2.5 x 8 according to PCB thickness used 17 ± 0.3 2.5 ± 0.1 45 ± 0.1 63.5 ± 0.15 0.8 Ra 1.3 21.1 7.4 48.7 ± 0.3 Ø 1 ± 0.025 + 0.5 - 0.2 4.1 A B C D E F G H I L M 1 45° 19.8 ± 0.1 2 27.5 ± 0.3 31.8 ± 0.15 3 7.6 4 15.2 5 22.8 Ø 5 (x 4) 33.2 ± 0.3 6 7 5.2 Ø 2.1 (x 4) R2.6 (x 2) 6 12 Pins position with tolerance Ø 0.5 22.8 ± 0.5 Ground pin 18 24 7 30 20 Document Number: 95383 Revision: 19-Nov-10 For technical questions, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000