NEW PRODUCT RELEASE ANNOUNCEMENT ISSUE NO. 81 NOV 2014 TSM4N60E 600V, 4A, 2.5Ω N-Channel Power MOSFET TO-251 Features: • • TO-252 Pin Definition: 1. Gate 2. Drain 3. Source 100% Avalanche Tested G-S ESD Protection Diode Embedded Product Portfolio: Part No. PKG Type VDS (V) VGS (V) VTH (V) RDS(ON) (Ω) Typ Max. Min Max Qg (nC) Ciss (pF) TSM4N60ECH TO-251 N-CH 600 ±30 2 2.5 3 5 12 545 TSM4N60ECP TO-252 N-CH 600 ±30 2 2.5 3 5 12 545 Closest Cross Reference: TSC ON STM TSM4N60ECH NDD4N60Z-1G STU3N62K3 TSM4N60ECP NDD4N60ZT4G STD3N62K3 Ordering Information: Part Number Outline (Package) Reel Inner Box Carton Carton Size (pcs) (pcs) (pcs) (mm) Gross Weight (kg/ carton) Reel Size (inch) Packing Code TSM4N60ECH TO-251 -- 3,750 30,000 585*350*315 15 -- C5G TSM4N60ECP TO-252 2,500 5,000 25,000 370*370*290 13.2 13 ROG www.taiwansemi.com