NEW PRODUCT RELEASE ANNOUNCEMENT ISSUE NO. 90 DEC 2014 TSM60N1R4 600V, 3.3A, 1.4Ω N-Channel Power MOSFET Features: • • • • Super-Junction technology High performance due to small figure-of-merit High ruggedness performance High commutation performance TO-251 TO-252 Pin Definition: 1. Gate 2. Drain 3. Source Typical Applications: • • Power Supply Lighting Product Portfolio: Part No. PKG Type VDS (V) VGS (V) VTH (V) RDS(ON) (Ω) Typ Max. Min Max Qg (nC) Ciss (pF) TSM60N1R4CH TO-251 N-CH 600 ±30 0.88 1.4 2 4 7.7 370 TSM60N1R4CP TO-252 N-CH 600 ±30 0.88 1.4 2 4 7.7 370 Closest Cross Reference: TSC Infineon STM TSM60N1R4CH IPD60R1K4C6 STD5N60M2 TSM60N1R4CP IPU60R1K4C6 STU5N60M2 www.taiwansemi.com NEW PRODUCT RELEASE ANNOUNCEMENT ISSUE NO. 90 DEC 2014 Ordering Information: Part Number Outline (Package) Reel Inner Box Carton Carton Size (pcs) (pcs) (pcs) (mm) Gross Weight (kg/ carton) Reel Size (inch) Packing Code TSM60N1R4CH TO-251 -- 3,750 30,000 585*350*315 15 -- C5G TSM60N1R4CP TO-252 2,500 5,000 25,000 370*370*290 13.2 13 ROG www.taiwansemi.com