SQM120N10-3m8 Datasheet

SQM120N10-3m8
www.vishay.com
Vishay Siliconix
Automotive N-Channel 100 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• TrenchFET® Power MOSFET
100
RDS(on) () at VGS = 10 V
• Package with Low Thermal Resistance
0.0038
ID (A)
• AEC-Q101 Qualifiedd
120
Configuration
• 100 % Rg and UIS Tested
Single
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
D
TO-263
G
G
D
S
S
Top View
N-Channel MOSFET
ORDERING INFORMATION
Package
TO-263
Lead (Pb)-free and Halogen-free
SQM120N10-3m8-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
100
Gate-Source Voltage
VGS
± 20
Continuous Drain Currenta
TC = 25 °C
TC = 125 °C
Continuous Source Current (Diode Conduction)a
Pulsed Drain
Currentb
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipationb
L = 0.1 mH
TC = 25 °C
TC = 125 °C
Operating Junction and Storage Temperature Range
ID
V
120
120
IS
120
IDM
480
IAS
73
EAS
266
PD
UNIT
375
125
A
mJ
W
TJ, Tstg
- 55 to + 175
°C
SYMBOL
LIMIT
UNIT
RthJA
40
RthJC
0.4
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
PCB Mountc
°C/W
Notes
a. Package limited.
b. Pulse test; pulse width  300 μs, duty cycle  2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
S13-1433-Rev. A, 01-Jul-13
Document Number: 63404
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQM120N10-3m8
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Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
VDS
VGS = 0, ID = 250 μA
100
-
-
VGS(th)
VDS = VGS, ID = 250 μA
2.5
3.0
3.5
VDS = 0 V, VGS = ± 20 V
UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductanceb
IGSS
IDSS
ID(on)
RDS(on)
gfs
-
-
± 100
VGS = 0 V
VDS = 100 V
-
-
1
VGS = 0 V
VDS = 100 V, TJ = 125 °C
-
-
50
VGS = 0 V
VDS = 100 V, TJ = 175 °C
-
-
500
VGS = 10 V
VDS5 V
120
-
-
VGS = 10 V
ID = 20 A
-
0.0030
0.0038
VGS = 10 V
ID = 20 A, TJ = 125 °C
-
-
0.0064
VGS = 10 V
ID = 20 A, TJ = 175 °C
-
-
0.0080
-
82
-
VDS = 15 V, ID = 20 A
V
nA
μA
A

S
Dynamicb
-
5780
7230
-
3070
3840
Crss
-
305
385
Qg
-
125
190
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Total Gate Chargec
Gate-Source
Chargec
Gate-Drain Chargec
Gate Resistance
Turn-On Delay Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
Qgs
VGS = 0 V
VGS = 10 V
VDS = 25 V, f = 1 MHz
VDS = 50 V, ID = 70 A
Qgd
Rg
f = 1 MHz
td(on)
tr
td(off)
VDD = 50 V, RL = 0.7 
ID  70 A, VGEN = 10 V, Rg = 1 
tf
-
28
-
-
46
-
1.6
3.3
5
-
16
25
pF
nC

-
110
165
-
40
60
-
12
20
-
-
480
A
-
0.9
1.5
V
ns
Source-Drain Diode Ratings and Characteristicsb
Pulsed Currenta
ISM
Forward Voltage
VSD
IF = 100 A, VGS = 0
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S13-1433-Rev. A, 01-Jul-13
Document Number: 63404
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQM120N10-3m8
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
150
VGS = 10 V thru 7 V
200
120
ID - Drain Current (A)
VGS = 6 V
ID - Drain Current (A)
150
100
50
90
TC = 25°C
60
TC = 125°C
30
TC = - 55°C
VGS = 5 V
0
0
0
2
4
6
8
10
0
2
4
6
8
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
200
10
0.010
TC = - 55 °C
0.008
TC = 25 °C
RDS(on) - On-Resistance (Ω)
gfs - Transconductance (S)
160
120
TC = 125 °C
80
40
0.006
0.004
VGS = 10 V
0.002
0
0.000
0
14
28
42
56
70
0
20
40
60
80
100
ID - Drain Current (A)
ID - Drain Current (A)
Transconductance
On-Resistance vs. Drain Current
10000
120
10
ID = 70 A
VDS = 50 V
VGS - Gate-to-Source Voltage (V)
C - Capacitance (pF)
8000
Ciss
6000
4000
Coss
2000
8
6
4
2
Crss
0
0
0
20
40
60
80
VDS - Drain-to-Source Voltage (V)
Capacitance
S13-1433-Rev. A, 01-Jul-13
100
0
30
60
90
120
150
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 63404
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQM120N10-3m8
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
100
ID = 20 A
10
1.8
IS - Source Current (A)
RDS(on) - On-Resistance (Normalized)
2.1
VGS = 10 V
1.5
1.2
1
0.1
TJ = 25 °C
0.01
0.9
0.001
0.6
- 50 - 25
0
25
50
75
100
125
150
0.0
175
0.2
0.4
0.6
0.8
1.0
1.2
TJ - Junction Temperature (°C)
VSD - Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature
Source Drain Diode Forward Voltage
0.020
0.6
0.016
0.1
VGS(th) Variance (V)
RDS(on) - On-Resistance (Ω)
TJ = 150 °C
0.012
0.008
TJ = 150 °C
- 0.4
ID = 5 mA
- 0.9
- 1.4
0.004
ID = 250 μA
TJ = 25 °C
- 1.9
0.000
0
2
4
6
8
- 50 - 25
10
0
VGS - Gate-to-Source Voltage (V)
25
50
75
100
125
150
175
TJ - Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
VDS - Drain-to-Source Voltage (V)
125
120
ID = 10 mA
115
110
105
100
- 50 - 25
0
25
50
75
100
125
150
175
TJ - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
S13-1433-Rev. A, 01-Jul-13
Document Number: 63404
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQM120N10-3m8
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
1000
ID - Drain Current (A)
100
IDM Limited
100 μs
1 ms
10
1
0.1
0.01
0.01
ID Limited
10 ms
100 ms, 1 s, 10 s, DC
Limited by RDS(on)*
BVDSS Limited
TC = 25 °C
Single Pulse
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
0.001
0.0001
10-4
10-3
10-2
10-1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
S13-1433-Rev. A, 01-Jul-13
Document Number: 63404
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQM120N10-3m8
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction to Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction to Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?63404.
S13-1433-Rev. A, 01-Jul-13
Document Number: 63404
6
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Ordering Information
www.vishay.com
Vishay Siliconix
D2PAK / TO-263 and TO-262
Ordering codes for the SQ rugged series power MOSFETs in the D2PAK / TO-263 and TO-262 packages:
DATASHEET PART NUMBER
OLD ORDERING CODE a
NEW ORDERING CODE
SQM100N04-2m7
SQM100N04-2M7-GE3
SQM100N04-2M7_GE3
SQM100N10-10
SQM100N10-10-GE3
SQM100N10-10_GE3
SQM110N05-06L
SQM110N05-06L-GE3
SQM110N05-06L_GE3
SQM110P06-8m9L
SQM110P06-8M9L-GE3
SQM110P06-8M9L_GE3
SQM120N02-1m3L
SQM120N02-1M3L-GE3
SQM120N02-1M3L_GE3
SQM120N03-1m5L
SQM120N03-1M5L-GE3
SQM120N03-1M5L_GE3
SQM120N04-1m7
SQM120N04-1M7-GE3
SQM120N04-1M7_GE3
SQM120N04-1m7L
SQM120N04-1M7L-GE3
SQM120N04-1M7L_GE3
SQM120N04-1m9
SQM120N04-1M9-GE3
SQM120N04-1M9_GE3
SQM120N06-06
SQM120N06-06-GE3
SQM120N06-06_GE3
SQM120N06-3m5L
SQM120N06-3M5L-GE3
SQM120N06-3M5L_GE3
SQM120N10-09
SQM120N10-09-GE3
SQM120N10-09_GE3
SQM120N10-3m8
SQM120N10-3M8-GE3
SQM120N10-3M8_GE3
SQM120P04-04L
SQM120P04-04L-GE3
SQM120P04-04L_GE3
SQM120P06-07L
SQM120P06-07L-GE3
SQM120P06-07L_GE3
SQM120P10-10m1L
-
SQM120P10_10m1LGE3
SQM200N04-1m1L
SQM200N04-1M1L-GE3
SQM200N04-1M1L_GE3
SQM200N04-1m7L
SQM200N04-1M7L-GE3
SQM200N04-1M7L_GE3
SQM200N04-1m8
SQM200N04-1M8-GE3
SQM200N04-1M8_GE3
SQM25N15-52
SQM25N15-52-GE3
SQM25N15-52_GE3
SQM35N30-97
SQM35N30-97-GE3
SQM35N30-97_GE3
SQM40N10-30
SQM40N10-30-GE3
SQM40N10-30_GE3
SQM40N15-38
SQM40N15-38-GE3
SQM40N15-38_GE3
SQM40P10-40L
SQM40P10-40L-GE3
SQM40P10-40L_GE3
SQM47N10-24L
SQM47N10-24L-GE3
SQM47N10-24L_GE3
SQM50020EL
-
SQM50020EL_GE3
SQM50N04-4m0L
SQM50N04-4M0L-GE3
SQM50N04-4M0L_GE3
SQM50N04-4m1
SQM50N04-4M1-GE3
SQM50N04-4M1_GE3
SQM50P03-07
SQM50P03-07-GE3
SQM50P03-07_GE3
SQM50P04-09L
SQM50P04-09L-GE3
SQM50P04-09L_GE3
SQM50P06-15L
SQM50P06-15L-GE3
SQM50P06-15L_GE3
SQM50P08-25L
SQM50P08-25L-GE3
SQM50P08-25L_GE3
SQM60030E
-
SQM60030E_GE3
SQM60N06-15
SQM60N06-15-GE3
SQM60N06-15_GE3
SQM60N20-35
SQM60N20-35-GE3
SQM60N20-35_GE3
SQM85N15-19
SQM85N15-19-GE3
SQM85N15-19_GE3
SQV120N10-3m8
SQV120N10-3m8-GE3
SQV120N10-3m8_GE3
SQV120N06-4m7L
-
SQV120N06-4m7L_GE3
Note
a. Old ordering code is obsolete and no longer valid for new orders
Revision: 24-Mar-16
Document Number: 67164
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
TO-263 (D2PAK): 3-LEAD
-B-
L2
6
E1
K
D4
-A-
c2
D2
D3
A
E
L3
L
D
D1
E3
A
A
b2
b
e
c
Detail “A”
E2
0.010 M A M
2 PL
0°
L4
-5
°
INCHES
L1
DETAIL A (ROTATED 90°)
c*
c
c1
c1
M
b
b1
SECTION A-A
MIN.
MAX.
MIN.
MAX.
A
0.160
0.190
4.064
4.826
b
0.020
0.039
0.508
0.990
b1
0.020
0.035
0.508
0.889
1.397
b2
0.045
0.055
1.143
Thin lead
0.013
0.018
0.330
0.457
Thick lead
0.023
0.028
0.584
0.711
Thin lead
0.013
0.017
0.330
0.431
Thick lead
0.023
0.027
0.584
0.685
c2
0.045
0.055
1.143
1.397
D
0.340
0.380
8.636
9.652
D1
0.220
0.240
5.588
6.096
D2
0.038
0.042
0.965
1.067
D3
0.045
0.055
1.143
1.397
D4
0.044
0.052
1.118
1.321
E
0.380
0.410
9.652
10.414
E1
0.245
-
6.223
-
E2
0.355
0.375
9.017
9.525
E3
0.072
0.078
1.829
1.981
e
Notes
1. Plane B includes maximum features of heat sink tab and plastic.
2. No more than 25 % of L1 can fall above seating plane by
max. 8 mils.
3. Pin-to-pin coplanarity max. 4 mils.
4. *: Thin lead is for SUB, SYB.
Thick lead is for SUM, SYM, SQM.
5. Use inches as the primary measurement.
6. This feature is for thick lead.
Revison: 30-Sep-13
MILLIMETERS
DIM.
0.100 BSC
2.54 BSC
K
0.045
0.055
1.143
1.397
L
0.575
0.625
14.605
15.875
L1
0.090
0.110
2.286
2.794
L2
0.040
0.055
1.016
1.397
L3
0.050
0.070
1.270
1.778
L4
M
0.010 BSC
-
0.254 BSC
0.002
-
0.050
ECN: T13-0707-Rev. K, 30-Sep-13
DWG: 5843
1
Document Number: 71198
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
AN826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead
0.420
0.355
0.635
(16.129)
(9.017)
(10.668)
0.145
(3.683)
0.135
(3.429)
0.200
0.050
(5.080)
(1.257)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Document Number: 73397
11-Apr-05
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1
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Revision: 02-Oct-12
1
Document Number: 91000