SQD10N30-330H www.vishay.com Vishay Siliconix Automotive N-Channel 300 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET® power MOSFET 300 RDS(on) (Ω) at VGS = 10 V • Package with low thermal resistance 0.330 ID (A) • AEC-Q101 qualified d 10 Configuration • 100 % Rg tested Single • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 D TO-252 TO Drain connected to tab G S S D G N-Channel MOSFET Top View ORDERING INFORMATION Package TO-252 Lead (Pb)-free and Halogen-free SQD10N30-330H-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 300 Gate-Source Voltage VGS ± 30 Continuous Drain Current TC = 25 °C TC = 125 °C Continuous Source Current (Diode Conduction) a Pulsed Drain Current IS b Single Pulse Avalanche Current e Single Pulse Avalanche Energy e Maximum Power Dissipation b ID L = 0.05 mH TC = 25 °C TC = 125 °C Operating Junction and Storage Temperature Range 5 50 16 IAS 12.65 PD V 10 IDM EAS UNIT 4 107 35 A mJ W TJ, Tstg -55 to +175 °C SYMBOL LIMIT UNIT RthJA 50 RthJC 1.4 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) PCB Mount c °C/W Notes a. Package limited. b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. c. When mounted on 1" square PCB (FR4 material). d. Parametric verification ongoing. e. 1.5 kΩ resistance in series with the gate. S15-1136-Rev. C, 12-May-15 Document Number: 67070 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQD10N30-330H www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. VDS VGS = 0 V, ID = 250 μA 300 - - VGS(th) VDS = VGS, ID = 250 μA 3.4 3.8 4.4 VDS = 0 V, VGS = ± 30 V UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current a ID(on) Drain-Source On-State Resistance a Forward Transconductance b RDS(on) gfs - - ± 100 VGS = 0 V VDS = 300 V - - 1 VGS = 0 V VDS = 300 V, TJ = 125 °C - - 50 VGS = 0 V VDS = 300 V, TJ = 175 °C - - 250 VGS = 10 V VDS ≥ 5 V 10 - - VGS = 10 V ID = 14 A - 0.275 0.330 VGS = 10 V ID = 14 A, TJ = 125 °C - - 0.733 VGS = 10 V ID = 14 A, TJ = 175 °C - - 1.000 - 26 - - 1749 2190 VDS = 15 V, ID = 14 A V nA μA A Ω S Dynamic b Input Capacitance Ciss VGS = 0 V Output Capacitance Coss - 112 140 Reverse Transfer Capacitance Crss - 44 55 Total Gate Charge c Qg - 31 47 - 8 - - 9.6 - 0.4 0.8 3 - 10 15 - 18 28 - 20 30 - 8 12 Gate-Source Charge c Gate-Drain Charge c Gate Resistance Turn-On Delay Time c Rise Time c Turn-Off Delay Qgs Fall Time c Source-Drain Diode Ratings and VDS = 150 V, ID = 7 A Qgd Rg f = 1 MHz td(on) tr Time c VGS = 10 V VDS = 25 V, f = 1 MHz td(off) VDD = 150 V, RL = 21 Ω ID ≅ 7 A, VGEN = 10 V, Rg = 1 Ω tf pF nC Ω ns Characteristics b Pulsed Current a ISM Forward Voltage VSD IF = 25 A, VGS = 0 V - - 16 A - 0.9 1.5 V Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S15-1136-Rev. C, 12-May-15 Document Number: 67070 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQD10N30-330H www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 18 20 VGS = 10 V thru 7 V 15 ID - Drain Current (A) ID - Drain Current (A) 16 VGS = 6 V 12 8 12 TC = 25 °C 9 6 4 TC = 125 °C 3 TC = - 55 °C VGS = 5 V 0 0 0 2 4 6 8 0 10 2 4 6 8 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 1.0 10 40 TC = - 55 °C 32 gfs - Transconductance (S) ID - Drain Current (A) 0.8 0.6 TC = 25 °C 0.4 0.2 TC = 125 °C 24 TC = 125 °C 16 8 TC = - 55 °C 0 0.0 0 2 4 6 8 0 10 3 6 9 VGS - Gate-to-Source Voltage (V) ID - Drain Current (A) Transfer Characteristics Transconductance 1.00 12 15 80 100 2400 2000 0.80 Ciss C - Capacitance (pF) RDS(on) - On-Resistance (Ω) TC = 25 °C 0.60 0.40 VGS = 10 V 0.20 1600 1200 800 Crss 400 Coss 0.00 0 0 4 8 12 16 20 0 20 40 60 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance S15-1136-Rev. C, 12-May-15 Document Number: 67070 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQD10N30-330H www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 3.5 10 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) ID = 7 A VDS = 150 V 8 6 4 2 10 20 30 2.1 VGS = 10 V 1.4 0.7 0.0 - 50 - 25 0 0 ID = 17 A 2.8 40 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 175 1.2 100 RDS(on) - On-Resistance (Ω) IS - Source Current (A) 10 TJ = 150 °C 1 0.1 TJ = 25 °C 0.9 TJ = 150 °C 0.6 0.3 0.01 TJ = 25 °C 0.001 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 8 12 16 20 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 1.0 VDS - Drain-to-Source Voltage (V) 400 0.4 VGS(th) Variance (V) 4 - 0.2 ID = 5 mA - 0.8 ID = 250 μA - 1.4 - 2.0 380 ID = 10 mA 360 340 320 300 5- 0 - 25 0 25 50 75 100 125 150 175 5- 0 - 25 0 25 50 75 100 125 150 175 TJ - Temperature (°C) TJ - Junction Temperature (°C) Threshold Voltage Drain Source Breakdown vs. Junction Temperature S15-1136-Rev. C, 12-May-15 Document Number: 67070 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQD10N30-330H www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 100 IDM Limited 100 μs ID - Drain Current (A) 10 Limited by RDS(on)* 1 ms 1 10 ms 100 ms, 1s, 10 s, DC 0.1 BVDSS Limited TC = 25 °C Single Pulse 0.01 0.01 0.1 1 10 100 1000 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient S15-1136-Rev. C, 12-May-15 Document Number: 67070 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQD10N30-330H www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 100 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67070. S15-1136-Rev. C, 12-May-15 Document Number: 67070 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQD10N30-330H www.vishay.com REVISION HISTORY REVISION Vishay Siliconix a DATE DESCRIPTION OF CHANGE B 26-Feb-2015 • UIS changed C 04-May-2015 • Rg, Ciss and tr updated Note a. As of April 2014 S15-1136-Rev. C, 12-May-15 Document Number: 67070 7 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Ordering Information www.vishay.com Vishay Siliconix DPAK / TO-252 and Reverse DPAK Ordering codes for the SQ rugged series power MOSFETs in the DPAK / TO-252 and Reverse DPAK packages: DATASHEET PART NUMBER OLD ORDERING CODE a SQD07N25-350H SQD07N25-350H-GE3 SQD07N25-350H_GE3 SQD100N02-3m5L - SQD100N02-3m5L_GE3 SQD100N03-3m2L SQD100N03-3M2L-GE3 SQD100N03-3M2L_GE3 SQD100N03-3m4 SQD100N03-3M4-GE3 SQD100N03-3M4_GE3 NEW ORDERING CODE SQD100N04-3m6 SQD100N04-3M6-GE3 SQD100N04-3M6_GE3 SQD100N04-3m6L SQD100N04-3M6L-GE3 SQD100N04-3M6L_GE3 SQD10N30-330H SQD10N30-330H-GE3 SQD10N30-330H_GE3 SQD15N06-42L SQD15N06-42L-GE3 SQD15N06-42L_GE3 SQD19P06-60L SQD19P06-60L-GE3 SQD19P06-60L_GE3 SQD23N06-31L SQD23N06-31L-GE3 SQD23N06-31L_GE3 SQD25N06-22L SQD25N06-22L-GE3 SQD25N06-22L_GE3 SQD25N15-52 SQD25N15-52-GE3 SQD25N15-52_GE3 SQD30N05-20L SQD30N05-20L-GE3 SQD30N05-20L_GE3 SQD40N06-14L SQD40N06-14L-GE3 SQD40N06-14L_GE3 SQD40N10-25 SQD40N10-25-GE3 SQD40N10-25_GE3 SQD40P10-40L SQD40P10-40L-GE3 SQD40P10-40L_GE3 SQD45P03-12 SQD45P03-12-GE3 SQD45P03-12_GE3 SQD50N04-5m6 SQD50N04-5M6-GE3 SQD50N04-5M6_GE3 SQD50N04-5m6L - SQD50N04-5m6L_GE3 SQD50N05-11L SQD50N05-11L-GE3 SQD50N05-11L_GE3 SQD50N06-09L SQD50N06-09L-GE3 SQD50N06-09L_GE3 SQD50N10-8m9L SQD50N10-8M9L-GE3 SQD50N10-8M9L_GE3 SQD50P03-07 SQD50P03-07-GE3 SQD50P03-07_GE3 SQD50P04-13L SQD50P04-13L-GE3 SQD50P04-13L_GE3 SQD50P04-09L SQD50P04-09L-GE3 SQD50P04-09L_GE3 SQD50P06-15L SQD50P06-15L-GE3 SQD50P06-15L_GE3 SQD50P08-25L SQD50P08-25L-GE3 SQD50P08-25L_GE3 SQD50P08-28 SQD50P08-28-GE3 SQD50P08-28_GE3 SQD90P04-9m4L SQD90P04-9M4L-GE3 SQD90P04-9M4L_GE3 SQD97N06-6m3L SQD97N06-6M3L-GE3 SQD97N06-6M3L_GE3 SQR40N10-25 SQR40N10-25-GE3 SQR40N10-25_GE3 SQR50N04-3m8 SQR50N04-3M8-GE3 SQR50N04-3M8_GE3 Note a. Old ordering code is obsolete and no longer valid for new orders Revision: 11-Nov-15 Document Number: 66957 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-252AA Case Outline E MILLIMETERS A C2 e b2 D1 e1 E1 L gage plane height (0.5 mm) L4 b L5 H D L3 b3 C A1 INCHES DIM. MIN. MAX. MIN. MAX. A 2.18 2.38 0.086 0.094 A1 - 0.127 - 0.005 b 0.64 0.88 0.025 0.035 b2 0.76 1.14 0.030 0.045 b3 4.95 5.46 0.195 0.215 0.024 C 0.46 0.61 0.018 C2 0.46 0.89 0.018 0.035 D 5.97 6.22 0.235 0.245 D1 4.10 - 0.161 - E 6.35 6.73 0.250 0.265 E1 4.32 - 0.170 - H 9.40 10.41 0.370 0.410 e 2.28 BSC e1 0.090 BSC 4.56 BSC 0.180 BSC L 1.40 1.78 0.055 0.070 L3 0.89 1.27 0.035 0.050 L4 - 1.02 - 0.040 L5 1.01 1.52 0.040 0.060 ECN: T13-0592-Rev. A, 02-Sep-13 DWG: 6019 Note • Dimension L3 is for reference only. Revision: 02-Sep-13 Document Number: 64424 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR DPAK (TO-252) 0.224 0.243 0.087 (2.202) 0.090 (2.286) (10.668) 0.420 (6.180) (5.690) 0.180 0.055 (4.572) (1.397) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72594 Revision: 21-Jan-08 www.vishay.com 3 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000