SiA922EDJ Datasheet

SiA922EDJ
www.vishay.com
Vishay Siliconix
Dual N-Channel 30 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
30
RDS(on) () MAX.
ID (A)
0.064 at VGS = 4.5 V
4.5a
0.072 at VGS = 3.0 V
4.5a
0.080 at VGS = 2.5 V
4.5a
0.400 at VGS = 1.8 V
0.2
• TrenchFET® Power MOSFET
• Thermally enhanced PowerPAK® SC-70 package
- Small footprint area
- Low on-resistance
• Typical ESD protection: 1500 V (HBM)
• 100 % Rg tested
• Material categorization: For definitions of
compliance please see www.vishay.com/doc?99912
Qg (TYP.)
3.5 nC
PowerPAK SC-70-6 Dual
1
S1
APPLICATIONS
2
G1
• Portable devices such as smart phones, tablet PCs and
mobile computing
- Load switch
- DC/DC converter
- Power management
3
D2
D1
D1
6
D2
G2
5
2.05 mm
4
2.05 mm
S2
D1
D2
Ordering Information:
SiA922EDJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
CIX
Part # code
XXX
G1
Marking Code
Lot Traceability
and Date code
G2
N-Channel MOSFET
S1
N-Channel MOSFET
S2
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
± 12
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
4.5a
TC = 70 °C
4.5a
ID
TA = 25 °C
3.5b, c
Pulsed Drain Current (t = 300 μs)
IDM
TC = 25 °C
15
1.6b, c
TC = 25 °C
7.8
TC = 70 °C
5
PD
TA = 25 °C
W
1.9b, c
1.2b, c
TA = 70 °C
Operating Junction and Storage Temperature Range
A
4.5a
IS
TA = 25 °C
Maximum Power Dissipation
V
4.4b, c
TA = 70 °C
Continuous Source-Drain Diode Current
UNIT
TJ, Tstg
-55 to 150
Soldering Recommendations (Peak Temperature) d,e
°C
260
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
SYMBOL
TYPICAL
MAXIMUM
t5s
RthJA
52
65
Steady State
RthJC
12.5
16
UNIT
°C/W
Notes
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state condition is 110 °C/W.
S13-2266-Rev. B, 04-Nov-13
Document Number: 62818
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA922EDJ
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
VDS
VGS = 0 V, ID = 250 μA
30
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VDS/TJ
VGS(th) Temperature Coefficient
VGS(th)/TJ
Gate-Source Threshold Voltage
VGS(th)
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain
Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
IGSS
IDSS
ID(on)
RDS(on)
gfs
ID = 250 μA
VDS = VGS, ID = 250 μA
V
34
mV/°C
-3.3
0.6
1.4
VDS = 0 V, VGS = ± 4.5 V
± 0.5
VDS = 0 V, VGS = ± 12 V
± 20
VDS = 30 V, VGS = 0 V
1
VDS = 30 V, VGS = 0 V, TJ = 55 °C
10
VDS  5 V, VGS = 4.5 V
10
V
μA
A
VGS = 4.5 V, ID = 3 A
0.049
0.064
VGS = 3.0 V, ID = 3 A
0.055
0.072
VGS = 2.5 V, ID = 1 A
0.060
0.080
VGS = 1.8 V, ID = 0.2 A
0.100
0.400
VDS = 15 V, ID = 3 A
13
VDS = 15 V, VGS = 10 V, ID = 4 A
7.5
12
3.5
5.5
VDS = 15 V, VGS = 4.5 V, ID = 4 A
1.8

S
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Rg
0.7
f = 1 MHz
td(on)
tr
td(off)
VDD = 15 V, RL = 4.7 
ID  3.2 A, VGEN = 4.5 V, Rg = 1 
0.6
3.3
6.6
20
40
60
120
25
50
tf
45
90
td(on)
1.5
5
30
60
15
30
50
100
tr
td(off)
nC
VDD = 15 V, RL = 4.7 
ID  3.2 A, VGEN = 10 V, Rg = 1 
tf

ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
TC = 25 °C
3.9
15
IS = 3.2 A, VGS = 0 V
0.87
1.2
A
V
Body Diode Reverse Recovery Time
trr
10
20
ns
Body Diode Reverse Recovery Charge
Qrr
4
10
nC
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
IF = 3.2 A, dI/dt = 100 A/μs, TJ = 25 °C
5.3
4.6
ns
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S13-2266-Rev. B, 04-Nov-13
Document Number: 62818
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA922EDJ
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10-2
1.500
10-3
IGSS - Gate Current (A)
IGSS - Gate Current (mA)
1.200
0.900
TJ = 25 °C
0.600
10-4
10-5
TJ = 150 °C
-6
10
TJ = 25 °C
10-7
10-8
0.300
10-9
10-10
0.000
0
3
6
9
12
0
15
3
6
9
12
15
VGS - Gate-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Gate Current vs. Gate-Source Voltage
Gate Current vs. Gate-Source Voltage
15
5
VGS = 5 V thru 3 V
VGS = 2.5 V
4
ID - Drain Current (A)
ID - Drain Current (A)
12
9
VGS = 2 V
6
3
3
TC = 25 °C
2
TC = 125 °C
1
VGS = 1.5 V
TC = - 55 °C
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.0
0.5
1.0
1.5
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
2.0
450
0.160
350
0.120
0.080
VGS = 3 V
VGS = 2.5 V
VGS = 4.5 V
0.040
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
400
Ciss
300
250
200
150
100
Crss
Coss
50
0
0.000
0
3
6
9
12
15
0
5
10
15
20
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
S13-2266-Rev. B, 04-Nov-13
25
30
Document Number: 62818
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA922EDJ
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10
VGS - Gate-to-Source Voltage (V)
ID = 4 A
RDS(on) - On-Resistance (Normalized)
1.8
VDS = 7.5 V
8
6
VDS = 15 V
VDS = 24 V
4
2
0
0
2
4
6
1.6
VGS = 10 V, 4.5 V, ID = 3.2 A
1.4
1.2
VGS = 2.5 V, ID = 1 A
1.0
0.8
0.6
- 50
8
- 25
0
Qg - Total Gate Charge (nC)
25
50
75
100
125
150
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
100
0.160
0.140
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
ID = 3 A
10
TJ = 150 °C
TJ = 25 °C
1
0.120
0.100
TJ = 125 °C
0.080
0.060
TJ = 25 °C
0.040
0.020
0.1
0.000
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
1
VSD - Source-to-Drain Voltage (V)
2
3
4
5
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
20
1.2
1.1
15
Power (W)
VGS(th) (V)
1.0
0.9
0.8
10
ID = 250 μA
0.7
5
0.6
0.5
- 50
- 25
0
25
50
75
100
125
150
0
0.001
0.01
0.1
1
Pulse (s)
10
100
1000
TJ - Temperature (°C)
Threshold Voltage
S13-2266-Rev. B, 04-Nov-13
Single Pulse Power (Junction-to-Ambient)
Document Number: 62818
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA922EDJ
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
Limited by RDS(on)*
ID - Drain Current (A)
10
100 us
1
1 ms
0.1
10 ms
100 ms
1s
10 s
DC
TA = 25 °C
BVDSS Limited
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
8
10
Power Dissipation (W)
ID - Drain Current (A)
8
6
Package Limited
4
6
4
2
2
0
0
0
25
50
75
100
TC - Case Temperature (°C)
Current Derating*
125
150
25
50
75
100
125
150
TC - Case Temperature (°C)
Power Derating






* The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S13-2266-Rev. B, 04-Nov-13
Document Number: 62818
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA922EDJ
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
Notes:
0.05
PDM
0.02
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 110 °C/W
Single Pulse
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case


















Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?62818.
S13-2266-Rev. B, 04-Nov-13
Document Number: 62818
6
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
b
e
PIN1
PIN3
PIN1
PIN2
PIN3
PIN5
K1
E1
E1
K
PIN6
K3
D1
D1
K
D2
D1
E3
E1
E2
K4
K
L
PIN2
b
e
L
PowerPAK® SC70-6L
PIN6
PIN4
K2
PIN5
K1
K2
BACKSIDE VIEW OF SINGLE
PIN4
K2
BACKSIDE VIEW OF DUAL
A
D
C
A1
E
Notes:
1. All dimensions are in millimeters
2. Package outline exclusive of mold flash and metal burr
3. Package outline inclusive of plating
Z
z
DETAIL Z
SINGLE PAD
DIM
A
MILLIMETERS
DUAL PAD
INCHES
MILLIMETERS
INCHES
Min
Nom
Max
Min
Nom
Max
Min
Nom
Max
Min
Nom
Max
0.675
0.75
0.80
0.027
0.030
0.032
0.675
0.75
0.80
0.027
0.030
0.032
A1
0
-
0.05
0
-
0.002
0
-
0.05
0
-
0.002
b
0.23
0.30
0.38
0.009
0.012
0.015
0.23
0.30
0.38
0.009
0.012
0.015
C
0.15
0.20
0.25
0.006
0.008
0.010
0.15
0.20
0.25
0.006
0.008
0.010
D
1.98
2.05
2.15
0.078
0.081
0.085
1.98
2.05
2.15
0.078
0.081
0.085
D1
0.85
0.95
1.05
0.033
0.037
0.041
0.513
0.613
0.713
0.020
0.024
0.028
D2
0.135
0.235
0.335
0.005
0.009
0.013
E
1.98
2.05
2.15
0.078
0.081
0.085
1.98
2.05
2.15
0.078
0.081
0.085
E1
1.40
1.50
1.60
0.055
0.059
0.063
0.85
0.95
1.05
0.033
0.037
0.041
E2
0.345
0.395
0.445
0.014
0.016
0.018
E3
0.425
0.475
0.525
0.017
0.019
0.021
e
0.65 BSC
0.026 BSC
0.65 BSC
0.026 BSC
K
0.275 TYP
0.011 TYP
0.275 TYP
0.011 TYP
K1
0.400 TYP
0.016 TYP
0.320 TYP
0.013 TYP
K2
0.240 TYP
0.009 TYP
0.252 TYP
0.010 TYP
K3
0.225 TYP
0.009 TYP
K4
L
0.355 TYP
0.175
0.275
0.014 TYP
0.375
T
0.007
0.011
0.015
0.175
0.275
0.375
0.007
0.011
0.015
0.05
0.10
0.15
0.002
0.004
0.006
ECN: C-07431 − Rev. C, 06-Aug-07
DWG: 5934
Document Number: 73001
06-Aug-07
www.vishay.com
1
Application Note 826
Vishay Siliconix
RECOMMENDED PAD LAYOUT FOR PowerPAK® SC70-6L Dual
2.500 (0.098)
0.300 (0.012)
0.350 (0.014)
0.325 (0.013)
0.275 (0.011)
0.613 (0.024)
2.500 (0.098)
0.950 (0.037)
0.475 (0.019)
0.160 (0.006)
0.275 (0.011)
1
0.650 (0.026)
1.600 (0.063)
APPLICATION NOTE
Dimensions in mm (inches)
Return to Index
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1
Document Number: 70487
Revision: 18-Oct-13
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definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
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all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
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Revision: 02-Oct-12
1
Document Number: 91000