REVISIONS LTR DATE (YR-MO-DA) APPROVED A Add radiation hardness assurance requirements. - ro DESCRIPTION 13-11-15 C. SAFFLE B Add footnote 1/ to paragraph 1.2.2. Add appendix A with update to paragraphs A.3.4 and A 4.2. -rrp 15-12-16 C. SAFFLE REV SHEET REV B B B B B B SHEET 15 16 17 18 19 20 REV STATUS REV B B B B B B B B B B B B B B OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY RICK OFFICER STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http://www.landandmaritime.dla.mil CHECKED BY RAJESH PITHADIA APPROVED BY THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC N/A CHARLES F. SAFFLE DRAWING APPROVAL DATE MICROCIRCUIT, LINEAR, SYNCHRONOUS STEP DOWN CONVERTER, MONOLITHIC SILICON 13-06-14 REVISION LEVEL B SIZE CAGE CODE A 67268 SHEET DSCC FORM 2233 APR 97 5962-10221 1 OF 20 5962-E529-15 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 R 10221 Federal stock class designator \ RHA designator (see 1.2.1) 01 V S C Device type (see 1.2.2) Device class designator (see 1.2.3) Case outline (see 1.2.4) Lead finish (see 1.2.5) / \/ Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type 01 1/ Generic number Circuit function TPS50601-SP 6.3 V, 6 A synchronous step down converter 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter S Descriptive designator Terminals CDFP3-F20 20 Package style Flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V. ______ 1/ The wafer probe test requirements shall include functional and parametric testing sufficient to make the packaged die capable of meeting the electrical performance requirements in table I. During package characterization of device type 01 die, manufacturer shall perform full temperature range test. However, wafer die probe test is performed at +25°C and +125°C for bare die. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-10221 A REVISION LEVEL B SHEET 2 1.3 Absolute maximum ratings. 2/ Input voltage (VIN) : Input voltage (VIN) ................................................................................................. -0.3 V to 7 V Power input voltage (PVIN) .................................................................................... Enable (EN) ........................................................................................................... Bootstrap cap (BOOT) ........................................................................................... Sense voltage (VSENSE) ....................................................................................... Compensation (COMP) ......................................................................................... Power good fault (PWRGD) ................................................................................... Slow start and tracking (SS/TR) ............................................................................ Synchronization (SYNC) ........................................................................................ Output voltage (VOUT) : BOOT-PH .............................................................................................................. Switch node (PH) ................................................................................................... PH 10 ns transient ................................................................................................. Output current ........................................................................................................... Differential voltage (Vdiff), GND to exposed thermal pad .......................................... Source current: High side switch current limit (between VIN and PH) ............................................. Low side switch current limit (between GND and PH) ........................................... Sink current: COMP .................................................................................................................... PWRGD ................................................................................................................. Electrostatic discharge (ESD): Human body model (HBM) .................................................................................... Charged device model (CDM) ............................................................................... Operating junction temperature (TJ) .......................................................................... Storage temperature ................................................................................................. Thermal resistance, junction to case (θJC) with thermal pad .................................... -0.3 V to 7 V -0.3 V to 5.5 V -0.3 V to 14 V -0.3 V to 3.3 V -0.3 V to 3.3 V -0.3 V to 5.5 V -0.3 V to 5.5 V -0.3 V to 7 V 0 V to 7 V -1 V to 7 V -3 V to 7 V 6A -0.2 V to 0.2 V 7.8 A 6A ±200 µA -0.1 mA to 5 mA 1 kV 1 kV -55°C to +150°C -65°C to +150°C 0.52°C/W 3/ 4/ 5/ Thermal resistance, junction to board (θJB) .............................................................. 43.1°C/W 3/ 4/ 5/ Thermal impedance, junction to ambient (θJA) ......................................................... 39.9°C/W 3/ 4/ 5/ 1.4 Recommended operating conditions. Input voltage (VIN) ..................................................................................................... 3 V to 6.3 V Power input voltage (PVIN) ........................................................................................ 1.6 V to 6.3 V Operating ambient temperature (TA) ......................................................................... -55°C to +125°C ______ 2/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 3/ Maximum power dissipation may be limited by overcurrent protection. 4/ Power rating at a specific ambient temperature (TA) should be determined with a junction temperature (TJ) of 150°C. This is the point where distortion starts to substantially increases. Thermal management of the printed circuit board (PCB) should strive to keep the junction temperature at or below 150°C for best performance and long term reliability. 5/ Test board conditions: a. 2.5 inches x 2.5 inches, four layers, thickness: 0.062 inch. b. Two ounces copper traces located on the top of the PCB. c. Two ounces copper ground planes on the two internal layers and bottom layer. d. Four 0.010 inch thermal vias located under the device package. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-10221 A REVISION LEVEL B SHEET 3 1.5 Radiation features. Maximum total dose available (effective dose rate = 0.1 rad(Si)/s) ........................... 100 krads(Si) 5/ 6/ The manufacturer supplying RHA device on this drawing has performed characterization test to demonstrate that the parts do not exhibit enhanced low dose rate sensitivity (ELDRS) in accordance with MIL-STD-883, method 1019, paragraph 3.13.1.1 at a dose level of 100 krads (Si). 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 MIL-STD-1835 - Test Method Standard Microcircuits. Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 MIL-HDBK-780 - List of Standard Microcircuit Drawings. Standard Microcircuit Drawings. (Copies of these documents are available online at http://quicksearch.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. ______ 5/ The manufacturer supplying device type 01 has performed characterization testing in accordance with MIL-STD-883 method 1019 paragraph 3.13.1.1 and the parts exhibited no enhanced low dose rate sensitivity (ELDRS) at a dose level of 100 krads(Si). The radiation end point limits for the noted parameters are guaranteed only for the conditions as specified in MIL-STD-883, method 1019, condition A and condition D to a maximum total dose of 100 krads(Si). 6/ Device type 01 is irradiated at dose rate = 50 - 300 rads(Si)/s in accordance with MIL-STD-883, method 1019, condition A, and is guaranteed to a maximum total dose specified. The effective dose rate after extended room temperature anneal = 0.1 rad(Si)/s per MIL-STD-883, method 1019, condition A, section 3.11.2. The total dose specification for these devices only applies to the specified effective dose rate, or lower environment. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-10221 A REVISION LEVEL B SHEET 4 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 as specified herein, or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. 3.1.1 Microcircuit die. For the requirements of microcircuit die, see appendix A to this document. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V. 3.2.1 Case outline. The case outline shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing and acquiring activity upon request. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturer's PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the "5962-" on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a "QML" or "Q" as required in MIL-PRF-38535. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). The certificate of compliance submitted to DLA Land and Maritime-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturer's product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 shall be provided with each lot of microcircuits delivered to this drawing. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-10221 A REVISION LEVEL B SHEET 5 TABLE I. Electrical performance characteristics. Test Symbol Conditions 1/ 2/ 3/ 4/ -55°C ≤ TA ≤ +125°C unless otherwise specified Group A subgroups Device type Limits Unit Min Max Supply voltage (VIN and PVIN pins). PVIN operating input voltage 1,2,3 01 1.6 6.3 V VIN operating input voltage 1,2,3 01 3 6.3 V VIN rising 1,2,3 01 3 V VIN shutdown supply current EN = 0 V 1,2,3 01 5.9 mA VIN operating – non switching VSENSE = voltage 1,2,3 01 10 mA 1.18 VIN internal under voltage lockout (UVLO) threshold supply current bandgap (VBG) = 0.795 V Enable and UVLO (EN pin). Enable threshold voltage Rising 1,2,3 01 Enable threshold voltage Falling 1,2,3 01 1.05 1 01 0.785 0.804 2 01 0.785 0.815 3 01 0.767 0.804 V V Voltage reference. Voltage reference 0 A ≤ IOUT ≤ 6 A V Current limit. High side switch current limit threshold 5/ VIN = 6.3 V 1,2,3 01 8 A Low side switch sourcing current limit 5/ VIN = 6.3 V 1,2,3 01 7 A RT = open 4,5,6 01 395 Internal switching frequency. Internal set frequency 585 kHz See footnotes at end of table. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-10221 A REVISION LEVEL B SHEET 6 TABLE I. Electrical performance characteristics – Continued. Test Symbol Conditions 1/ 2/ 3/ 4/ -55°C ≤ TA ≤ +125°C unless otherwise specified Group A subgroups Device type Limits Min Unit Max External synchronization. SYNC out low-to-high rise time (10%/90%) CL = 25 pF 9,10,11 01 111 ns SYNC out high-to-low fall time (90%/10%) CL = 25 pF 9,10,11 01 15 ns SYNC out high level threshold IOH = 50 µA 1,2,3 01 SYNC out low level threshold IOL = 50 µA 1,2,3 01 SYNC in low level threshold 1,2,3 01 SYNC in high level threshold 1,2,3 01 4,5,6 01 SYNC in frequency range 6/ % of program frequency 2 V 600 800 mV mV 1.85 V -5 5 % 100 1000 kHz PH (PH pin). Minimum on time Measured at 90% to 90% of 9 01 175 ns 1,2,3 01 3 V V(SS/TR) = 0.4 V 1,2,3 01 90 mV VSENSE = Vref, 1,2,3 01 181 nA VIN, IPH = 2 A BOOT (BOOT pin). BOOT and PH pins UVLO Slow start and tracking (SS/TR pin). SS/TR to VSENSE matching Power good (PWRGD pin). Output high leakage V(PWRGD) = 5 V Output low voltage I(PWRGD) = 2 mA 1,2,3 01 0.3 V Minimum VIN for valid output V(PWRGD) < 0.5 V at 100 µA 1,2,3 01 1 V 1,2,3 01 1.4 V Minimum SS/TR voltage for PWRGD See footnotes at end of table. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-10221 A REVISION LEVEL B SHEET 7 TABLE I. Electrical performance characteristics – Continued. 1/ 2/ 3/ 4/ 5/ 6/ Unless otherwise specified, VIN = 3 V to 6.3 V and PVIN = 1.6 V to 6.3 V. Device type 01 supplied to this drawing has been characterized through all levels M, D, P, L, and R of irradiation. However, these devices are only tested at the “R” level. Pre and Post irradiation values are identical unless otherwise specified in Table I. When performing post irradiation electrical measurements for any RHA level, TA = +25°C (see 1.5 herein). The manufacturer supplying device types 01 has performed characterization testing in accordance with MIL-STD-883 method 1019 paragraph 3.13.1.1 and the parts exhibited no enhanced low dose rate sensitivity (ELDRS) at a dose level of 100 krads(Si). The radiation end point limits for the noted parameters are guaranteed only for the conditions as specified in MIL-STD-883, method 1019, condition A and condition D to a maximum total dose of 100 kads(Si). Device types 01 are irradiated at dose rate = 50 - 300 rads(Si)/s in accordance with MIL-STD-883, method 1019, condition A, and is guaranteed to a maximum total dose specified. The effective dose rate after extended room temperature anneal = 0.1 rad (Si)/s per MIL-STD-883, method 1019, condition A, section 3.11.2. The total dose specification for these devices only applies to the specified effective dose rate, or lower environment. For wafer probe only, specification is guaranteed by characterization and is not tested in production. For wafer probe only, specification is guaranteed by characterization and production tested at nominal voltage with VIN = PVIN = 5V. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-10221 A REVISION LEVEL B SHEET 8 Device types 01 Case outline S Terminal number Terminal symbol 1 GND 2 EN 3 RT 4 SYNC 5 VIN 6 PVIN 7 PVIN 8 PGND 9 PGND 10 PGND 11 PH 12 PH 13 PH 14 PH 15 PH 16 BOOT 17 VSENSE 18 COMP 19 SS/TR 20 PWRGD FIGURE 1. Terminal connections. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-10221 A REVISION LEVEL B SHEET 9 Terminal symbol Description GND Return for control circuitry/thermal pad. See note 1. Enable pin. Float to enable (enable internally pulled up to VIN). Adjust the input undervoltage lockout with two resistors. In internal oscillation mode, a resistor is connected between the RT pin and GND to set the switching frequency. EN RT Optional 1 MHz external system clock input. The device operates with an internal oscillator if this pin is left open. SYNC VIN Supplies the power to the output FET controllers. PVIN Power input. Supplies the power switches of the power converter. PGND Return for low side power MOSFET. PH The switch node. A boot strap cap is required between BOOT and PH. The voltage on this cap carries the gate drive voltage for the high side MOSFET. BOOT Inverting input of the transconductance (gm) error amplifier. VSENSE COMP Error amplifier output, and input to the output switch current comparator. Connect frequency compensation to this pin. SS/TR Slow start and tracking. An external capacitor connected to this pin sets the internal voltage reference rise time. The voltage on this pin overrides the internal reference. It can be used for tracking and sequencing. PWRGD Power good fault pin. Asserts low if output voltage is low due to thermal shutdown, dropout, over voltage, EN shutdown or during slow start. Note: 1. Thermal pad (analog ground) must be connected to PGND external to the package. FIGURE 1. Terminal connections - continued. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-10221 A REVISION LEVEL B SHEET 10 4. VERIFICATION 4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. 4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted on all devices prior to qualification and technology conformance inspection. 4.2.1 Additional criteria for device classes Q and V. a. The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under document revision level control of the device manufacturer's Technology Review Board (TRB) in accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015 of MIL-STD-883. b. Interim and final electrical test parameters shall be as specified in table IIA herein. c. Additional screening for device class V beyond the requirements of device class Q shall be as specified in MIL-PRF-38535, appendix B. 4.3 Qualification inspection for device classes Q and V. Qualification inspection for device classes Q and V shall be in accordance with MIL-PRF-38535. Inspections to be performed shall be those specified in MIL-PRF-38535 and herein for groups A, B, C, D, and E inspections (see 4.4.1 through 4.4.4). 4.4 Conformance inspection. Technology conformance inspection for classes Q and V shall be in accordance with MIL-PRF-38535 including groups A, B, C, D, and E inspections, and as specified herein. 4.4.1 Group A inspection. a. Tests shall be as specified in table IIA herein. b. Subgroups 7 and 8 in table I, method 5005 of MIL-STD-883 shall be omitted. 4.4.2 Group C inspection. The group C inspection end-point electrical parameters shall be as specified in table IIA herein. 4.4.2.1 Additional criteria for device classes Q and V. The steady-state life test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The test circuit shall be maintained under document revision level control by the device manufacturer's TRB in accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1005 of MIL-STD-883. 4.4.3 Group D inspection. The group D inspection end-point electrical parameters shall be as specified in table IIA herein. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-10221 A REVISION LEVEL B SHEET 11 TABLE IIA. Electrical test requirements. Test requirements Interim electrical parameters (see 4.2) Final electrical parameters (see 4.2) Group A test requirements (see 4.4) Group C end-point electrical parameters (see 4.4) Group D end-point electrical parameters (see 4.4) Group E end-point electrical parameters (see 4.4) Subgroups (in accordance with MIL-PRF-38535, table III) Device Device class Q class V 1,2,3,4,5,6, 1,2,3,4,5,6, 9,10,11 9,10,11 1,2,3,4,5,6, 1/ 1,2,3,4,5,6, 1/ 2/ 9,10,11 9,10,11 1,2,3,4,5,6, 1,2,3,4,5,6, 9,10,11 9,10,11 1,2,3,4,5,6 1,2,3,4,5,6 2/ 1,4 1,4 1,4,9 1,4,9 1/ PDA applies to subgroup 1. 2/ Delta limits as specified in table IIB shall be required where specified, and the delta limits shall be completed with reference to the zero hour electrical parameters (see table I). TABLE IIB. Burn-in and life test delta parameters. (TA = +25°C). 1/ Device type Min Max Units VIN shutdown supply current 01 -0.59 +0.59 mA VIN operating - non switching supply current 01 -1.0 +1.0 mA Parameters 1/ Deltas are performed at room temperature. 4.4.4 Group E inspection. Group E inspection is required only for parts intended to be marked as radiation hardness assured (see 3.5 herein). a. End-point electrical parameters shall be as specified in table IIA herein. b. For device classes Q and V, the devices or test vehicle shall be subjected to radiation hardness assured tests as specified in MIL-PRF-38535 for the RHA level being tested. All device classes must meet the postirradiation end-point electrical parameter limits as defined in table I at TA = +25°C ±5°C, after exposure, to the subgroups specified in table IIA herein. 4.4.4.1 Total dose irradiation testing. Total dose irradiation testing shall be performed in accordance with MIL-STD-883 method 1019, condition A and condition D as specified herein for device types 01. 4.4.4.1.1 Accelerated annealing test. Accelerated annealing testing shall be performed on all devices requiring a RHA level greater than 5 krads(Si). The post-anneal end-point electrical parameter limits shall be as specified in table I herein and shall be the pre-irradiation end-point electrical parameter limits at 25°C ±5°C. Testing shall be performed at initial qualification and after any design or process changes which may affect the RHA response of the device. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-10221 A REVISION LEVEL B SHEET 12 5. PACKAGING 5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-PRF-38535 for device classes Q and V. 6. NOTES 6.1 Intended use. Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes. 6.1.1 Replaceability. Microcircuits covered by this drawing will replace the same generic device covered by a contractor prepared specification or drawing. 6.2 Configuration control of SMD's. All proposed changes to existing SMD's will be coordinated with the users of record for the individual documents. This coordination will be accomplished using DD Form 1692, Engineering Change Proposal. 6.3 Record of users. Military and industrial users should inform DLA Land and Maritime when a system application requires configuration control and which SMD's are applicable to that system. DLA Land and Maritime will maintain a record of users and this list will be used for coordination and distribution of changes to the drawings. Users of drawings covering microelectronic devices (FSC 5962) should contact DLA Land and Maritime-VA, telephone (614) 692-8108. 6.4 Comments. Comments on this drawing should be directed to DLA Land and Maritime-VA, Columbus, Ohio 43218-3990, or telephone (614) 692-0540. 6.5 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in MIL-PRF-38535 and MIL-HDBK-1331. 6.6 Sources of supply. 6.6.1 Sources of supply for device classes Q and V. Sources of supply for device classes Q and V are listed in MIL-HDBK-103 and QML-38535. The vendors listed in MIL-HDBK-103 and QML-38535 have submitted a certificate of compliance (see 3.6 herein) to DLA Land and Maritime-VA and have agreed to this drawing. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-10221 A REVISION LEVEL B SHEET 13 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-10221 A.1 SCOPE A.1.1 Scope. This appendix establishes minimum requirements for microcircuit die to be supplied under the Qualified Manufacturers List (QML) Program. QML microcircuit die meeting the requirements of MIL-PRF-38535 and the manufacturers approved QM plan for use in monolithic microcircuits, multi-chip modules (MCMs), hybrids, electronic modules, or devices using chip and wire designs in accordance with MIL-PRF-38534 are specified herein. Two product assurance classes consisting of military high reliability (device class Q) and space application (device class V) are reflected in the Part or Identification Number (PIN). When available, a choice of Radiation Hardiness Assurance (RHA) levels are reflected in the PIN. A.1.2 PIN. The PIN is as shown in the following example: 5962 R Federal stock class designator \ RHA designator (see A.1.2.1) 10221 01 V 9 A Device type (see A.1.2.2) Device class designator (see A.1.2.3) Die code Die details (see A.1.2.4) / \/ Drawing number A.1.2.1 RHA designator. Device classes Q and V RHA identified die meet the MIL-PRF-38535 specified RHA levels. A dash (-) indicates a non-RHA die. A.1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type 01 Generic number Circuit function TPS50601-RHA KGD 6.3 V, 6 A synchronous step down converter A.1.2.3 Device class designator. Device class Q or V STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 Device requirements documentation Certification and qualification to the die requirements of MIL-PRF-38535 SIZE 5962-10221 A REVISION LEVEL B SHEET 14 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-10221 A.1.2.4 Die details. The die details designation is a unique letter which designates the die's physical dimensions, bonding pad location(s) and related electrical function(s), interface materials, and other assembly related information, for each product and variant supplied to this appendix. A.1.2.4.1 Die physical dimensions. Die type Figure number 01 A-1 A.1.2.4.2 Die bonding pad locations and electrical functions. Die type Figure number 01 A-1 A.1.2.4.3 Interface materials. Die type Figure number 01 A-1 A.1.2.4.4 Assembly related information. Die type Figure number 01 A-1 A.1.3 Absolute maximum ratings. See paragraph 1.3 herein for details. A.1.4 Recommended operating conditions. See paragraph 1.4 herein for details. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-10221 A REVISION LEVEL B SHEET 15 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-10221 A.2 APPLICABLE DOCUMENTS. A.2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARD MIL-STD-883 - Test Method Standard Microcircuits. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http://quicksearch.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) A.2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. A.3 REQUIREMENTS A.3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturer’s Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. A.3.2 Design, construction and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein and the manufacturer’s QM plan for device classes Q and V. A.3.2.1 Die physical dimensions. The die physical dimensions shall be as specified in A.1.2.4.1 and on figure A-1. A.3.2.2 Die bonding pad locations and electrical functions. The die bonding pad locations and electrical functions shall be as specified in A.1.2.4.2 and on figure A-1. A.3.2.3 Interface materials. The interface materials for the die shall be as specified in A.1.2.4.3 and on figure A-1. A.3.2.4 Assembly related information. The assembly related information shall be as specified in A.1.2.4.4 and on figure A-1. A.3.2.5 Radiation exposure circuit. The radiation exposure circuit shall be as defined in paragraph 3.2.3 herein. A.3.3 Electrical performance characteristics and post-irradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and post-irradiation parameter limits are as specified in table I of the body of this document. A.3.4 Electrical test requirements. The wafer probe test requirements shall include functional and parametric testing sufficient to make the packaged die capable of meeting the electrical performance requirements in table I. During package characterization of device type 01 die, manufacturer shall perform full temperature range test. However, wafer die probe test is performed at +25°C and +125°C for bare die. A.3.5 Marking. As a minimum, each unique lot of die, loaded in single or multiple stack of carriers, for shipment to a customer, shall be identified with the wafer lot number, the certification mark, the manufacturer’s identification and the PIN listed in A.1.2 herein. The certification mark shall be a “QML” or “Q” as required by MIL-PRF-38535. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-10221 A REVISION LEVEL B SHEET 16 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-10221 A.3.6 Certification of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see A.6.4 herein). The certificate of compliance submitted to DLA Land and Maritime -VA prior to listing as an approved source of supply for this appendix shall affirm that the manufacturer’s product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and the requirements herein. A.3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 shall be provided with each lot of microcircuit die delivered to this drawing. A.4 VERIFICATION A.4.1 Sampling and inspection. For device classes Q and V, die sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturer’s Quality Management (QM) plan. The modifications in the QM plan shall not affect the form, fit, or function as described herein. A.4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and as defined in the manufacturer’s QM plan. As a minimum, it shall consist of: a. Wafer lot acceptance for class V product using the criteria defined in MIL-STD-883, method 5007. b. 100% die wafer probe test is performed at +25°C and +125°C (see paragraph A.3.4 herein). c. 100% internal visual inspection to the applicable class Q or V criteria defined in MIL-STD-883, method 2010 or the alternate procedures allowed in MIL-STD-883, method 5004. A.4.3 Conformance inspection. A.4.3.1 Group E inspection. Group E inspection is required only for parts intended to be identified as radiation assured (see A.3.5 herein). RHA levels for device classes Q and V shall be as specified in MIL-PRF-38535. End point electrical testing of packaged die shall be as specified in table IIA herein. Group E tests and conditions are as specified in paragraphs 4.4.4, 4.4.4.1, and 4.4.4.1.1 herein. A.5 DIE CARRIER A.5.1 Die carrier requirements. The requirements for the die carrier shall be accordance with the manufacturer’s QM plan or as specified in the purchase order by the acquiring activity. The die carrier shall provide adequate physical, mechanical and electrostatic protection. A.6 NOTES A.6.1 Intended use. Microcircuit die conforming to this drawing are intended for use in microcircuits built in accordance with MIL-PRF-38535 or MIL-PRF-38534 for government microcircuit applications (original equipment), design applications, and logistics purposes. A.6.2 Comments. Comments on this appendix should be directed to DLA Land and Maritime -VA, Columbus, Ohio, 43218-3990 or telephone (614)-692-0540. A.6.3 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in MIL-PRF-38535 and MIL-HDBK-1331. A.6.4 Sources of supply for device classes Q and V. Sources of supply for device classes Q and V are listed in QML-38535. The vendors listed within MIL-HDBK-103 and QML-38535 have submitted a certificate of compliance (see A.3.6 herein) to DLA Land and Maritime -VA and have agreed to this drawing. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-10221 A REVISION LEVEL B SHEET 17 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-10221 FIGURE A-1. Die bonding pad locations and electrical functions. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-10221 A REVISION LEVEL B SHEET 18 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-10221 Description Pad number X MIN (µm) Y MIN (µm) X MAX (µm) Y MAX (µm) GND 1 400.77 5039.325 578.07 5216.625 EN 2 44.19 4169.79 221.49 4347.09 RT 3 44.19 3894.21 221.49 4071.51 SYNC 4 44.19 3618.63 221.49 3795.93 VIN 5 47.565 2952.27 224.865 3129.57 PVIN 6 280.215 2414.115 457.515 2591.415 PVIN 7 280.215 2170.665 457.515 2347.965 PVIN 8 280.215 1928.115 457.515 2105.415 PVIN 9 280.215 1684.665 457.515 1861.965 PGND 10 254.52 1236.285 431.82 1413.585 PGND 11 254.52 1008.315 431.82 1185.615 PGND 12 254.52 780.345 431.82 957.645 PGND 13 254.52 552.375 431.82 729.675 PGND 14 254.52 324.405 431.82 501.705 PGND 15 254.52 96.435 431.82 273.735 PH 16 1590.12 99.405 1767.42 276.705 PH 17 1590.12 321.435 1767.42 498.735 PH 18 1590.12 555.345 1767.42 732.645 PH 19 1590.12 777.375 1767.42 954.675 PH 20 1590.12 1011.285 1767.42 1188.585 PH 21 1590.12 1233.315 1767.42 1410.615 PH 22 1564.335 1684.665 1741.635 1861.965 PH 23 1564.335 1928.115 1741.635 2105.415 PH 24 1564.335 2170.665 1741.635 2347.965 PH 25 1564.335 2414.115 1741.635 2591.415 BOOT 26 1801.71 3352.14 1979.01 3529.44 VSENSE 27 1801.71 3644.145 1979.01 3821.445 COMP 28 1801.71 3940.92 1979.01 4118.22 SS/TR 29 1801.71 4216.5 1979.01 4393.8 PWRGD 30 1463.67 5039.325 1640.97 5216.625 GND 31 1251.09 5039.325 1428.39 5216.625 GND 32 1038.51 5039.325 1215.81 5216.625 GND 33 825.93 5039.325 1003.23 5216.625 GND 34 613.35 5039.325 790.65 5216.6 Substrate is not to be connected FIGURE A-1. Die bonding pad locations and electrical functions - continued. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-10221 A REVISION LEVEL B SHEET 19 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-10221 Die physical dimensions. Die size: 2100.00 μm x 5358.00 μm Die thickness: 15 ± 1 mils Interface materials. Top metallization: Al5TiN (557.5 nm) Backside metallization: Bare back Glassivation. Type: Oxide Thickness: 11 kA Substrate: Silicon Assembly related information. Substrate potential: Ground Special assembly instructions: None FIGURE A-1. Die bonding pad locations and electrical functions - continued. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-10221 A REVISION LEVEL B SHEET 20 STANDARD MICROCIRCUIT DRAWING BULLETIN DATE: 15-12-16 Approved sources of supply for SMD 5962-10221 are listed below for immediate acquisition information only and shall be added to MIL-HDBK-103 and QML-38535 during the next revision. MIL-HDBK-103 and QML-38535 will be revised to include the addition or deletion of sources. The vendors listed below have agreed to this drawing and a certificate of compliance has been submitted to and accepted by DLA Land and Maritime -VA. This information bulletin is superseded by the next dated revision of MIL-HDBK-103 and QML-38535. DLA Land and Maritime maintains an online database of all current sources of supply at http://www.landandmaritime.dla.mil/Programs/Smcr/. Standard microcircuit drawing PIN 1/ Vendor CAGE number Vendor similar PIN 2/ 5962-1022101VSC 01295 TPS50601-SP 5962R1022101VSC 01295 TPS50601-RHA 5962R1022101V9A 01295 TPS50601-RHA KGD 1/ The lead finish shown for each PIN representing a hermetic package is the most readily available from the manufacturer listed for that part. If the desired lead finish is not listed contact the vendor to determine its availability. 2/ Caution. Do not use this number for item acquisition. Items acquired to this number may not satisfy the performance requirements of this drawing. Vendor CAGE number 01295 Vendor name and address Texas Instruments, Inc. Semiconductor Group 8505 Forest lane P.O. Box 660199 Dallas, TX 75243 The information contained herein is disseminated for convenience only and the Government assumes no liability whatsoever for any inaccuracies in the information bulletin.