Data Sheet

DF
N2
020
D-3
PMEG3020CPAS
30 V, 2 A low VF dual MEGA Schottky barrier rectifier
20 January 2015
Product data sheet
1. General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier in
common cathode configuration with an integrated guard ring for stress protection,
encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted
Device (SMD) plastic package with visible and solderable side pads.
2. Features and benefits
•
•
•
•
•
•
•
•
•
Average forward current IF(AV) ≤ 2 A
Reverse voltage VR ≤ 30 V
Low forward voltage VF ≤ 440 mV
Low reverse current
Reduced Printed-Circuit-Board (PCB) area requirements
Exposed heat sink (cathode pad) for excellent thermal and electrical conductivity
Leadless small SMD plastic package with visible and solderable side pads
Suitable for Automatic Optical Inspection (AOI) of solder joints
AEC-Q101 qualified
3. Applications
•
•
•
•
•
•
•
•
Low voltage rectification
High efficiency DC-to-DC conversion
Switch Mode Power Supply (SMPS)
Free-wheeling application
Reverse polarity protection
Low power consumption application
Battery chargers for mobile equipment
LED backlight for mobile application
4. Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
average forward
current
δ = 0.5; f = 20 kHz; Tamb ≤ 75 °C;
Min
Typ
Max
Unit
-
-
2
A
-
-
2
A
Per diode
IF(AV)
[1]
square wave
δ = 0.5; f = 20 kHz; Tsp ≤ 135 °C;
square wave
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PMEG3020CPAS
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30 V, 2 A low VF dual MEGA Schottky barrier rectifier
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VR
reverse voltage
Tj = 25 °C
-
-
30
V
forward voltage
IF = 2 A; tp ≤ 300 µs; δ ≤ 0.02;
-
410
440
mV
-
485
2000
µA
Per diode
VF
Tj = 25 °C; pulsed
IR
reverse current
VR = 30 V; tp ≤ 300 µs; δ ≤ 0.02;
Tj = 25 °C; pulsed
[1]
Device mounted on a ceramic PCB, Al2O3, standard footprint.
5. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
1
anode
diode 1
A1
2
anode
diode 2
A2
3
common K
cathode
Simplified outline
Graphic symbol
3
3
1
2
Transparent top view
1
2
006aaa438
DFN2020D-3 (SOT1061D)
6. Ordering information
Table 3.
Ordering information
Type number
PMEG3020CPAS
Package
Name
Description
Version
DFN2020D-3
DFN2020D-3: plastic thermal enhanced ultra thin small outline
package; no leads; 3 terminals; body 2 x 2 x 0.65 mm
SOT1061D
7. Marking
Table 4.
Marking codes
Type number
Marking code
PMEG3020CPAS
CT
PMEG3020CPAS
Product data sheet
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30 V, 2 A low VF dual MEGA Schottky barrier rectifier
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VR
reverse voltage
Tj = 25 °C
-
30
V
IF
forward current
Tsp ≤ 130 °C; δ = 1
-
2.8
A
IF(AV)
average forward current
δ = 0.5; f = 20 kHz; Tamb ≤ 75 °C;
-
2
A
-
2
A
Per diode
[1]
square wave
δ = 0.5; f = 20 kHz; Tsp ≤ 135 °C;
square wave
IFRM
repetitive peak forward current
tp ≤ 1 ms; δ ≤ 0.25
-
7
A
IFSM
non-repetitive peak forward
current
tp = 8 ms; Tj(init) = 25 °C; square wave
-
9
A
[2]
-
500
mW
[3]
-
960
mW
[1]
-
1800
mW
Per device; one diode loaded
Ptot
total power dissipation
Tamb ≤ 25 °C
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
-55
150
°C
Tstg
storage temperature
-65
150
°C
[1]
[2]
[3]
PMEG3020CPAS
Product data sheet
Device mounted on a ceramic PCB, Al2O3, standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm .
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30 V, 2 A low VF dual MEGA Schottky barrier rectifier
9. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
[1][2]
-
-
250
K/W
[1][3]
-
-
130
K/W
[1][4]
-
-
70
K/W
[5]
-
-
12
K/W
Per device; one diode loaded
Rth(j-a)
thermal resistance
from junction to
ambient
Rth(j-sp)
in free air
thermal resistance
from junction to solder
point
[1]
[2]
[3]
[4]
[5]
For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses PR are a significant part of the total power losses.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm .
Device mounted on a ceramic PCB, Al2O3, standard footprint.
Soldering point of cathode tab.
006aac415
103
Zth(j-a)
(K/W)
duty cycle =
1
102
0.5
0.25
0.1
10
0.02
0.75
0.33
0.2
0.05
0.01
0
1
10- 3
10- 2
10- 1
1
10
102
tp (s)
103
FR4 PCB, standard footprint
Fig. 1.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMEG3020CPAS
Product data sheet
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30 V, 2 A low VF dual MEGA Schottky barrier rectifier
006aac416
103
Zth(j-a)
(K/W)
duty cycle =
1
102
0.5
0.25
0.1
10
0
0.75
0.33
0.2
0.05
0.02
0.01
1
10- 3
10- 2
10- 1
FR4 PCB, mounting pad for cathode 1 cm
Fig. 2.
1
10
102
tp (s)
103
2
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
102
006aac417
duty cycle =
1
Zth(j-a)
(K/W)
0.75
0.5
0.33
0.25
10
0.1
0
1
10- 3
0.2
0.05
0.02
0.01
10- 2
10- 1
1
10
102
tp (s)
103
Ceramic PCB, Al2O3, standard footprint
Fig. 3.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMEG3020CPAS
Product data sheet
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30 V, 2 A low VF dual MEGA Schottky barrier rectifier
10. Characteristics
Table 7.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
reverse breakdown
voltage
IR = 5 mA; Tj = 25 °C; tp = 300 µs;
30
-
-
V
forward voltage
IF = 100 mA; tp ≤ 300 µs; δ ≤ 0.02;
-
220
-
mV
-
335
370
mV
-
410
440
mV
-
120
-
µA
-
485
2000
µA
VR = 1 V; f = 1 MHz; Tj = 25 °C
-
170
-
pF
VR = 10 V; f = 1 MHz; Tj = 25 °C
-
60
-
pF
IF = 0.5 A; IR = 1 A; IR(meas) = 0.25 A;
-
4
-
ns
Per diode
V(BR)R
VF
δ = 0.02; pulsed
Tj = 25 °C; pulsed
IF = 1 A; tp ≤ 300 µs; δ ≤ 0.02;
Tj = 25 °C; pulsed
IF = 2 A; tp ≤ 300 µs; δ ≤ 0.02;
Tj = 25 °C; pulsed
IR
VR = 10 V; tp ≤ 300 µs; δ ≤ 0.02;
reverse current
Tj = 25 °C; pulsed
VR = 30 V; tp ≤ 300 µs; δ ≤ 0.02;
Tj = 25 °C; pulsed
Cd
diode capacitance
trr
reverse recovery time
Tj = 25 °C
006aac418
10
IF
(A)
1
(1)
006aac419
1
IR
(A)
10- 1
(1)
(2)
(2)
10- 2
(3)
10- 1
(4)
(5)
10- 3
(3)
10- 4
10- 2
10- 5
10- 3
10- 4
0.0
10- 6
0.1
0.2
0.3
0.4
0.5
0.6
0.7
VF (V)
0
10
(1) Tj = 150 °C
(1) Tj = 125 °C
(2) Tj = 125 °C
(2) Tj = 85 °C
(3) Tj = 85 °C
(3) Tj = 25 °C
(4) Tj = 25 °C
(4) Tj = −40 °C
(5) Tj = −40 °C
Fig. 4.
10- 7
(4)
Fig. 5.
Forward current as a function of forward
voltage; typical values
PMEG3020CPAS
Product data sheet
VR (V)
30
Reverse current as a function of reverse
voltage; typical values
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30 V, 2 A low VF dual MEGA Schottky barrier rectifier
006aac420
300
006aac421
1.4
PF(AV)
(W)
1.2
Cd
(pF)
(4)
(3)
(2)
1.0
200
(1)
0.8
0.6
100
0.4
0.2
0
Fig. 6.
0
10
20
0.0
0.0
30
VR (V)
f = 1 MHz; Tamb = 25 °C
Tj = 150 °C
Diode capacitance as a function of reverse
voltage; typical values
(1) δ = 0.1
(2) δ = 0.2
(3) δ = 0.5
(4) δ = 1
Fig. 7.
006aac422
3.0
1.0
2.0
IF(AV) (A)
3.0
Average forward power dissipation as a
function of average forward current; typical
values
aaa-015084
0.6
PR(AV)
(W)
PR(AV)
(W)
2.0
0.4
(1)
(1)
(2)
(2)
(3)
(3)
1.0
0.2
(4)
(4)
0.0
Fig. 8.
0
5
10
15
VR (V)
0.0
20
0
Tj = 125 °C
Tj = 85 °C
(1) δ = 1
(2) δ = 0.9
(3) δ = 0.8
(4) δ = 0.5
(1) δ = 1
(2) δ = 0.9
(3) δ = 0.8
(4) δ = 0.5
Average reverse power dissipation as a
function of reverse voltage; typical values
PMEG3020CPAS
Product data sheet
Fig. 9.
20
VR (V)
30
Average reverse power dissipation as a
function of reverse voltage; typical values
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30 V, 2 A low VF dual MEGA Schottky barrier rectifier
006aac423
3.0
IF(AV)
(A)
006aac424
3.0
(1)
IF(AV)
(A)
(1)
2.0
(2)
2.0
(2)
(3)
(3)
1.0
1.0
(4)
(4)
0.0
0
25
50
75
100
125
150
175
Tamb (°C)
0.0
FR4 PCB, standard footprint
Tj = 150 °C
006aac425
3.0
(1)
75
100
125
150
175
Tamb (°C)
2
Fig. 11. Average forward current as a function of
ambient temperature; typical values
006aac426
3.0
(1)
IF(AV)
(A)
(2)
(2)
2.0
(3)
(3)
1.0
1.0
(4)
(4)
0.0
50
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
Fig. 10. Average forward current as a function of
ambient temperature; typical values
2.0
25
FR4 PCB, mounting pad for cathode 1 cm
Tj = 150 °C
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
IF(AV)
(A)
0
0
25
50
75
100
125
150
175
Tamb (°C)
0.0
0
25
50
75
Ceramic PCB, Al2O3, standard footprint
Tj = 150 °C
Tj = 150 °C
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
Fig. 12. Average forward current as a function of
ambient temperature; typical values
PMEG3020CPAS
Product data sheet
100
125
150
175
Tsp (°C)
Fig. 13. Average forward current as a function of solder
point temperature; typical values
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30 V, 2 A low VF dual MEGA Schottky barrier rectifier
11. Test information
IF
IR(meas)
time
IR
trr
006aad022
Fig. 14. Reverse recovery definition
P
t2
duty cycle δ =
t1
t2
t1
t
006aaa812
Fig. 15. Duty cycle definition
The current ratings for the typical waveforms are calculated according to the equations:
IF(AV) = IM × δ with IM defined as peak current, IRMS = IF(AV) at DC, and IRMS = IM × √δ with
IRMS defined as RMS current.
11.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
PMEG3020CPAS
Product data sheet
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30 V, 2 A low VF dual MEGA Schottky barrier rectifier
12. Package outline
1.3
0.35
0.25
1
0.3
0.2
0.65
max
0.45
0.35
0.04
max
2
1.1
0.9
2.1
1.9
3
1.6
1.4
2.1
1.9
Dimensions in mm
14-03-18
Fig. 16. Package outline DFN2020D-3 (SOT1061D)
PMEG3020CPAS
Product data sheet
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30 V, 2 A low VF dual MEGA Schottky barrier rectifier
13. Soldering
Footprint information for reflow soldering of DFN2020D-3 package
SOT1061D
2.1
1.7
1.3
0.4 (2x)
0.5 (2x)
0.3 (2x)
0.5 (2x) 0.6 (2x) 0.7 (2x)
0.25
1.1
2.5
0.35
0.3
0.25
2.3
0.25
1
0.35
1.1
0.35
1.2
0.35
0.3
0.4
0.5
1.5
1.6
1.7
occupied area
solder resist
solder lands
solder paste
Dimensions in mm
Issue date
14-03-05
14-03-12
sot1061d_fr
Fig. 17. Reflow soldering footprint for DFN2020D-3 (SOT1061D)
PMEG3020CPAS
Product data sheet
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30 V, 2 A low VF dual MEGA Schottky barrier rectifier
14. Revision history
Table 8.
Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
PMEG3020CPAS v.2
20150120
Product data sheet
-
PMEG3020CPAS v.1
Modifications:
•
PMEG3020CPAS v.1
20141210
-
-
PMEG3020CPAS
Product data sheet
Changed data sheet status
Preliminary data sheet
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30 V, 2 A low VF dual MEGA Schottky barrier rectifier
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
15. Legal information
15.1 Data sheet status
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Definition
Please consult the most recently issued document before initiating or
completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nxp.com.
15.2 Definitions
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
NXP Semiconductors does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences
of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local NXP
Semiconductors sales office. In case of any inconsistency or conflict with the
short data sheet, the full data sheet shall prevail.
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data sheet shall define the specification of the product as agreed between
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customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
15.3 Disclaimers
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, NXP Semiconductors does not give
any representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
PMEG3020CPAS
Product data sheet
Right to make changes — NXP Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use in automotive applications — This NXP
Semiconductors product has been qualified for use in automotive
applications. Unless otherwise agreed in writing, the product is not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer's own
risk.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their
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Semiconductors accepts no liability for any assistance with applications or
customer product design. It is customer’s sole responsibility to determine
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customer’s applications and products planned, as well as for the planned
application and use of customer’s third party customer(s). Customers should
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associated with their applications and products.
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damage, costs or problem which is based on any weakness or default
in the customer’s applications or products, or the application or use by
customer’s third party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications
and the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
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applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
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30 V, 2 A low VF dual MEGA Schottky barrier rectifier
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
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between the translated and English versions.
15.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Bitsound, CoolFlux, CoReUse, DESFire, FabKey, GreenChip,
HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, MIFARE,
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PMEG3020CPAS
Product data sheet
All information provided in this document is subject to legal disclaimers.
20 January 2015
© NXP Semiconductors N.V. 2015. All rights reserved
14 / 15
PMEG3020CPAS
NXP Semiconductors
30 V, 2 A low VF dual MEGA Schottky barrier rectifier
16. Contents
1
General description ............................................... 1
2
Features and benefits ............................................1
3
Applications ........................................................... 1
4
Quick reference data ............................................. 1
5
Pinning information ............................................... 2
6
Ordering information ............................................. 2
7
Marking ................................................................... 2
8
Limiting values .......................................................3
9
Thermal characteristics .........................................4
10
Characteristics ....................................................... 6
11
11.1
Test information ..................................................... 9
Quality information ............................................... 9
12
Package outline ................................................... 10
13
Soldering .............................................................. 11
14
Revision history ................................................... 12
15
15.1
15.2
15.3
15.4
Legal information .................................................13
Data sheet status ............................................... 13
Definitions ...........................................................13
Disclaimers .........................................................13
Trademarks ........................................................ 14
© NXP Semiconductors N.V. 2015. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 20 January 2015
PMEG3020CPAS
Product data sheet
All information provided in this document is subject to legal disclaimers.
20 January 2015
© NXP Semiconductors N.V. 2015. All rights reserved
15 / 15