SUD08P06-155L-GE3 Datasheet

SUD08P06-155L-GE3
Vishay Siliconix
P-Channel 60 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
- 60
• TrenchFET® Power MOSFETS
RDS(on) ()
ID (A)
0.155 at VGS = - 10 V
- 8.4
0.280 at VGS = - 4.5 V
- 7.4
Qg (Typ)
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
12.5
TO-252
S
G
Drain Connected to Tab
G
D
S
D
Top View
Ordering Information:
SUD08P06-155L-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
Parameter
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 100 °C
Symbol
Limit
Unit
VGS
± 20
V
- 8.2
ID
- 5.2
IDM
- 18
Continuing Source Current (Diode Conduction)
IS
- 8.4
Avalanche Current
IAS
- 12
Pulsed Drain Current
Single Pulse Avalanche Energy
L = 0.1 mH
TC = 25 °C
Maximum Power Dissipation
TA = 25 °C
EAS
7.2
mJ
20.8a
PD
W
1.7b
TJ, Tstg
Operating Junction and Storage Temperature Range
A
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
t  10 s
Junction-to-Ambientb
Steady State
RthJA
RthJC
Junction-to-Case
Typical
Maximum
20
25
62
75
5
6
Unit
°C/W
Notes:
a. See SOA curve for voltage derating.
b. Surface mounted on 1" x 1" FR-4 boad.
Document Number: 62843
S13-0788-Rev. A, 15-Apr-13
For technical questions, contact: [email protected]
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1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUD08P06-155L-GE3
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = - 250 µA
- 60
VGS(th)
VDS = VGS, ID = - 250 µA
-1
IGSS
VDS = 0 V, VGS = ± 20 V
Typ.a
Max.
-2
-3
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
IDSS
Zero Gate Voltage Drain Current
On-State Drain Currentb
-1
VDS = - 60 V, VGS = 0 V, TJ = 125 °C
- 50
VDS = - 60 V, VGS = 0 V, TJ = 150 °C
- 150
ID(on)
VDS = -5 V, VGS = - 10 V
VGS = - 10 V, ID = - 5 A
Drain-Source On-State Resistanceb
b
Forward Transconductance
Dynamic
RDS(on)
± 100
VDS = - 60 V, VGS = 0 V
- 10
VGS = - 10 V, ID = - 5 A, TJ = 150 °C
0.350
VGS = - 4.5 V, ID = - 2 A
0.158
VDS = - 15 V, ID = - 5 A
8
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
40
Total Gate Charge
Qg
12.5
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
td(on)
Turn-Off Delay Timec
td(off)
Turn-On Delay Time
Rise Timec
tr
Fall Timec
VDS = - 30 V, VGS = - 10 V, ID = - 8.4 A
VDD = - 30 V, RL = 3.57 
ID  - 8.4 A, VGEN = - 10 V, RG = 2.5 
Forward Voltage
trr
Reverse Recovery Time
Qrr
S
pF
65
19
nC
2.3

8
5
10
14
25
15
25
7
12
- 20
A
- 0.9
- 1.3
V
ns
°C)b
ISM
VSD
Reverse Recovery Time
0.280
3.2
f = 1 MHz
Source-Drain Diode Ratings and Characteristics (TC = 25
b

450
VDS = - 25 V, VGS = 0 V, f = 1 MHz
tf
Pulsed Current
µA
0.155
0.280
Input Capacitance
c
nA
A
0.125
VGS = - 10 V, ID = - 5 A, TJ = 125 °C
gfs
V
IF = - 2 A, VGS = 0 V
IF = - 8 A, dI/dt = 100 A/µs
50
80
ns
80
120
nC
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width  300 µs, duty cycle  2 %.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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For technical questions, contact: [email protected]
Document Number: 62843
S13-0788-Rev. A, 15-Apr-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUD08P06-155L-GE3
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C unless noted)
30
20
TC = - 55 °C
VGS = 10 thru 6 V
25 °C
16
ID - Drain Current (A)
I D - Drain Current (A)
24
5V
18
12
4V
6
125 °C
12
8
4
3V
0
0
2
4
6
8
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
10
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.30
12
TC = - 55 °C
0.25
25 °C
R DS(on) - On-Resistance (Ω)
g fs - Transconductance (S)
10
125 °C
8
6
4
2
VGS = 4.5 V
0.20
VGS = 10 V
0.15
0.10
0.05
0.00
0
0
2
4
6
8
0
10
4
8
ID - Drain Current (A)
16
20
ID - Drain Current (A)
Transconductance
On-Resistance vs. Drain Current
20
800
V GS - Gate-to-Source Voltage (V)
700
600
C - Capacitance (pF)
12
Ciss
500
400
300
200
Coss
100
Crss
0
0
VDS = 30 V
ID = 8.4 A
16
12
8
4
0
10
20
30
40
VDS - Drain-to-Source Voltage (V)
50
60
0
5
10
20
25
Qg - Total Gate Charge (nC)
Capacitance
Document Number: 62843
S13-0788-Rev. A, 15-Apr-13
15
For technical questions, contact: [email protected]
Gate Charge
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUD08P06-155L-GE3
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C unless noted)
10
1.7
I S - Source Current (A)
R DS(on) - On-Resistance (Normalized)
2.0
1.4
1.1
TJ = 150 °C
1
0.1
TJ = 25 °C
0.01
0.8
0.001
0.5
- 50
- 25
0
25
50
75
100
125
0.0
150
0.2
0.4
0.6
0.8
1.0
VSD - Source-to-Drain Voltage (V)
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
10
100
8
10
ID - Drain Current (A)
ID - Drain Current (A)
THERMAL RATINGS
6
4
100 μs
Limited by RDS(on)*
1 ms
1
10 ms
DC, 10 s,
1 s, 100 ms
0.1
0.01
2
TC = 25 °C
Single Pulse
BVDSS Limited
0.001
0
0
25
50
75
100
125
TC - Case Temperature (°C)
Drain Current vs. Case Temperature
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4
150
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
For technical questions, contact: [email protected]
Document Number: 62843
S13-0788-Rev. A, 15-Apr-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUD08P06-155L-GE3
Vishay Siliconix
THERMAL RATINGS
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10- 5
10- 4
10- 3
10- 2
10- 1
Square Wave Pulse Duration (sec)
1
10
100
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?62843.
Document Number: 62843
S13-0788-Rev. A, 15-Apr-13
For technical questions, contact: [email protected]
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
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Vishay Siliconix
TO-252AA Case Outline
E
MILLIMETERS
A
C2
e
b2
D1
e1
E1
L
gage plane height (0.5 mm)
L4
b
L5
H
D
L3
b3
C
A1
INCHES
DIM.
MIN.
MAX.
MIN.
MAX.
A
2.18
2.38
0.086
0.094
A1
-
0.127
-
0.005
b
0.64
0.88
0.025
0.035
b2
0.76
1.14
0.030
0.045
b3
4.95
5.46
0.195
0.215
0.024
C
0.46
0.61
0.018
C2
0.46
0.89
0.018
0.035
D
5.97
6.22
0.235
0.245
D1
4.10
-
0.161
-
E
6.35
6.73
0.250
0.265
E1
4.32
-
0.170
-
H
9.40
10.41
0.370
0.410
e
2.28 BSC
e1
0.090 BSC
4.56 BSC
0.180 BSC
L
1.40
1.78
0.055
0.070
L3
0.89
1.27
0.035
0.050
L4
-
1.02
-
0.040
L5
1.01
1.52
0.040
0.060
ECN: T16-0236-Rev. P, 16-May-16
DWG: 5347
Notes
• Dimension L3 is for reference only.
Revision: 16-May-16
Document Number: 71197
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)
0.224
0.243
0.087
(2.202)
0.090
(2.286)
(10.668)
0.420
(6.180)
(5.690)
0.180
0.055
(4.572)
(1.397)
Recommended Minimum Pads
Dimensions in Inches/(mm)
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APPLICATION NOTE
Document Number: 72594
Revision: 21-Jan-08
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Revision: 02-Oct-12
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Document Number: 91000