2N3502 2N3503 2N3504 2N3505

2N3502
2N3503
2N3504
2N3505
MECHANICAL DATA
Dimensions in mm (inches)
PNP SILICON PLANAR EPITAXIAL
TRANSISTORS
5.84 (0.230)
5.31 (0.209)
5.33 (0.210)
4.32 (0.170)
4.95 (0.195)
4.52 (0.178)
12.7 (0.500)
min.
FEATURES
0.48 (0.019)
0.41 (0.016)
dia.
• SILICON PLANAR EPITAXIAL PNP
TRANSISTOR
2.54 (0.100)
Nom.
3
1
2
TO18 METAL PACKAGE
PIN 1 – Emitter
PIN 2 – Base
PIN 3 – Collector
These PNP silicon planar epitaxial trasistors
are designed for digital and analog
applications at current levels up 0.5 amps.
8.89 (0.35)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
6.10 (0.240)
6.60 (0.260)
12.70
(0.500)
min.
APPLICATIONS:
0.89
max.
(0.035)
0.41 (0.016)
0.53 (0.021)
dia.
5.08 (0.200)
typ.
2.54
(0.100)
2
1
3
0.66 (0.026)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
45°
TO5 METAL PACKAGE
PIN 1 – Emitter
PIN 2 – Base
PIN 3 – Collector
ABSOLUTE MAXIMUM RATINGS(TA = 25°C unless otherwise stated)
Maximum Voltages
VCBO
VCEO
VEBO
Collector – Base Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Maximum Power Dissipation
PD
PD
Total Dissipation @ 25°C Case Temperature
Total [email protected] 25°C Free Air Temperature
TJ
Storage Temperature
Operating Junction Temperature
Semelab plc.
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail: [email protected]
Website: http://www.semelab.co.uk
2N3503
2N3505
- 60V
-60V
-5V
2N3502
2N3503
3W
0.7 W
2N3502
2N3504
-45V
-45V
-5V
2N3504
2N3505
1.3 W
0.4 W
-65°C to +200°C
200°C
Document Number 3067
Issue: 1
2N3502
2N3503
2N3504
2N3505
ELECTRICAL CHARACTERISTICS (25°C free air temperature unless otherwise stated)
Parameter
Test Conditions
Min.
Typ.
BVCBO
BVEBO
VCEO
ICES
ICBO(150)
hFE
Collector to Base
Breakdown Voltage
Emmiter to Base
Breakdown Voltage
Collector-Emitter
Sustaining Voltage
IC = 10µΑ
IE = 0
IE = 10µΑ
IC = 0
IC = 10mΑ
IB = 0
VBE(sat)
-60
2N3502 / 2N3504
-45
Max. Unit
V
-5
2N3503 / 2N3505
-60
2N3502 / 2N3504
-45
V
V
VCE = -50V VBE = 0
2N3503 / 2N3505
0.07
10
VCE = -30V VBE = 0
2N3502 / 2N3504
0.05
10
Collector Reverse
IE = 0
VCB = -50V
2N3503 / 2N3505
10
Current
t = 150°C
VCB = -30V
2N3502 / 2N3504
10
IC = 10mA
VCE = -10V
140
270
IC = 50mA
VCE = -1.0V
115
160
IC = 1.0mA
VCE = -10 V
135
200
IC = 150mA VCE = -10V
100
150
IC = 10µA
80
120
50
70
50
100
Collector Cutoff Current
DC Current Gain
VCE = -10V
IC = 500mA VCE = -10 V
VCE(sat)
2N3503 / 2N3505
t = -55°C
300
VCE = -1.0V
IC = 50mA
IB = 2.5mA
-0.08
-0.25
IC = 150mA IB = 15mA
-0.18
-0.4
IC = 500mA IB = 50mA
-0.5
-1.6
IC = 50mA
IB = 2.5mA
-0.9
-1.0
Base Saturation Voltage IC = 150mA IB = 15mA
-1.0
-1.3
Voltage
Transition Frequency
IC = 50mA
Cob
Output Capacitance
VCB = -10V IE = 0
ton
Turn On Time
toff
Turn Off Time
IC = 300mA
VCE = -20V
IB1 = 30mA
—
V
V
-2.0
IC = 500mA IB = 50mA
FT
µA
300
IC = 50mA
Collector Saturation
nA
f = 100MHZ
IB2 = -30mA
2
2.50
—
4.5
8.0
30
40
65
100
pf
ns
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail: [email protected]
Website: http://www.semelab.co.uk
Document Number 3067
Issue: 1