Data Sheet

DF
N1
01
0D
-3
BAV70QA
Dual common cathode high-speed switching diode
4 May 2016
Product data sheet
1. General description
Dual common cathode high-speed switching diode encapsulated in a leadless ultra small
DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and
solderable side pads.
2. Features and benefits
•
•
•
•
•
•
•
•
High switching speed: trr ≤ 4 ns
Low leakage current: IR ≤ 0.5 µA
Reverse voltage VR ≤ 100 V
Low capacitance Cd ≤ 1.5 pF
Ultra small SMD plastic package
Low package height of 0.37 mm
AEC-Q101 qualified
Suitable for Automatic Optical Inspection (AOI) of solder joint
3. Applications
•
•
High-speed switching
General-purpose switching
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
IF
forward current
Tamb = 25 °C; single diode loaded
-
-
300
mA
VR
reverse voltage
Tj = 25 °C
-
-
100
V
IR
reverse current
VR = 80 V; Tj = 25 °C
-
-
0.5
µA
trr
reverse recovery time
IF = 10 mA; IR = 10 mA; IR(meas) = 1 mA;
RL = 100 Ω; Tamb = 25 °C
-
-
4
ns
Per diode
[1]
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
BAV70QA
NXP Semiconductors
Dual common cathode high-speed switching diode
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
1
A1
anode (diode 1)
2
A2
anode (diode 2)
3
CC
common cathode
4
CC
common cathode
Simplified outline
Graphic symbol
1
A1
4
CC
3
A2
2
aaa-021931
Transparent top view
DFN1010D-3 (SOT1215)
6. Ordering information
Table 3. Ordering information
Type number
Package
BAV70QA
Name
Description
Version
DFN1010D-3
DFN1010D-3: plastic thermal enhanced ultra thin small outline
package; no leads; 3 terminals; body 1.1 x 1.0 x 0.37 mm
SOT1215
7. Marking
Table 4. Marking codes
Type number
Marking code
BAV70QA
Z 010
MARKING CODE
(EXAMPLE)
READING
DIRECTION
YEAR DATE
CODE
PIN 1
INDICATION MARK
VENDOR CODE
READING EXAMPLE:
MARK-FREE AREA
A 110
aaa-020723
Fig. 1. DFN1010D-3 (SOT1215) binary marking code description
BAV70QA
Product data sheet
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Dual common cathode high-speed switching diode
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VR
reverse voltage
Tj = 25 °C
-
100
V
VRRM
repetitive peak reverse
voltage
-
100
V
IF
forward current
Per diode
Tamb = 25 °C; single diode loaded
[1]
-
300
mA
Tamb = 25 °C; double diode loaded
[1]
-
175
mA
IFRM
repetitive peak forward
current
tp ≤ 0.5 ms; δ ≤ 0.25 ; Tj = 25 °C
-
1
A
IFSM
non-repetitive peak
forward current
tp = 100 µs; Tj(init) = 25 °C; square wave
-
4
A
tp = 1 ms; Tj(init) = 25 °C; square wave
-
1.5
A
tp = 1 s; Tj(init) = 25 °C; square wave
-
0.5
A
[1]
-
325
mW
[2]
-
540
mW
Per device; one diode loaded
Ptot
total power dissipation
Tamb ≤ 25 °C
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
-55
150
°C
Tstg
storage temperature
-65
150
°C
[1]
[2]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm².
aaa-021932
0.4
IF
(A)
(1)
0.3
0.2
(2)
0.1
0.0
0
25
50
75
100
125
150
175
Tamb (°C)
(1) single diode loaded
(2) double diode loaded
Fig. 2. Forward current as a function of ambient temperature; derating curve
BAV70QA
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BAV70QA
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Dual common cathode high-speed switching diode
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
Rth(j-sp)
[1]
[2]
[3]
thermal resistance
from junction to solder
point
Min
Typ
Max
Unit
[1]
-
-
385
K/W
[2]
-
-
230
K/W
[3]
-
-
50
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm².
Soldering point of cathode tab.
aaa-020904
103
Zth(j-a)
(K/W)
duty cycle =
1
0.5
102
0.25
0.1
0.75
0.33
0.2
0.05
0.02
0.01
10
0
1
10-5
10-4
10-3
10-2
10-1
1
102
10
tp (s)
103
FR4 PCB, standard footprint
Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-020905
103
Zth(j-a)
(K/W)
duty cycle =
1
0.5
102
0.25
0.1
10
0.75
0.33
0.2
0.05
0.02
0.01
0
1
10-5
10-4
10-3
10-2
10-1
1
102
10
tp (s)
103
FR4 PCB, mounting pad for cathode 1 cm²
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
BAV70QA
Product data sheet
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BAV70QA
NXP Semiconductors
Dual common cathode high-speed switching diode
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
forward voltage
IF = 1 mA; Tj = 25 °C
-
-
715
mV
IF = 10 mA; Tj = 25 °C
-
-
855
mV
IF = 50 mA; Tj = 25 °C
-
-
1
V
IF = 150 mA; Tj = 25 °C
-
-
1.25
V
VR = 25 V; Tj = 25 °C
-
-
30
nA
VR = 80 V; Tj = 25 °C
-
-
0.5
µA
VR = 25 V; Tj = 150 °C
-
-
30
µA
VR = 80 V; Tj = 150 °C
-
-
100
µA
Per diode
VF
IR
reverse current
Cd
diode capacitance
VR = 0 V; f = 1 MHz; Tj = 25 °C
-
-
1.5
pF
trr
reverse recovery time
IF = 10 mA; IR = 10 mA; IR(meas) = 1 mA;
RL = 100 Ω; Tamb = 25 °C
-
-
4
ns
VFR
forward recovery
voltage
IF = 10 mA; tr = 20 ns; Tamb = 25 °C
-
-
1.75
V
aaa-021933
1
IR
(A)
IF
(A)
10-1
aaa-021934
10-4
10-5
(1)
(2)
10-6
10-7
(1)
(3)
(2)
10-2
10-8
(3)
10-9
(4)
10-3
(4)
10-10
10-11
10-4
0.0
0.5
1.0
1.5
VF (V)
10-12
2.0
(1) Tj = 150 °C
(2) Tj = 85 °C
(3) Tj = 25 °C
(4) Tj = −40 °C
0
20
40
60
80
VR (V)
100
(1) Tj = 150 °C
(2) Tj = 85 °C
(3) Tj = 25 °C
(4) Tj = −40 °C
Fig. 5. Forward current as a function of forward voltage; Fig. 6. Reverse current as a function of reverse voltage;
typical values
typical values
BAV70QA
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BAV70QA
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Dual common cathode high-speed switching diode
aaa-021935
0.6
Cd
(pF)
aaa-020909
10
IFSM
(A)
0.4
1
0.2
0.0
0
5
10
15
20
VR (V)
10-1
10-1
25
f = 1MHz; Tamb = 25 °C
Fig. 7. Diode capacitance as a function of reverse
voltage; typical values
BAV70QA
Product data sheet
1
102
10
tp (ms)
103
Based on square wave currents.
Tamb = 25 °C
Fig. 8. Non-repetitive forward current as a function of
pulse duration; maximum values
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BAV70QA
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Dual common cathode high-speed switching diode
11. Test information
tr
D.U.T.
t
10 %
IF
RS = 50 Ω
tp
+ IF
SAMPLING
OSCILLOSCOPE
trr
t
Ri = 50 Ω
V = VR + IF × RS
mga881
(1)
90 %
VR
input signal
output signal
(1) IR = 1 mA
Fig. 9. Reverse recovery time test circuit and waveforms
I
RS = 50 Ω
1 kΩ
450 Ω
I
V
90 %
OSCILLOSCOPE
D.U.T.
VFR
Ri = 50 Ω
10 %
tr
t
tp
t
input signal
output signal
mga882
Fig. 10. Forward recovery voltage test circuit and waveforms
Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC)
standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in
automotive applications.
12. Package outline
0.87
0.95
0.75
1
0.95
1.05
0.22
0.30
2
0.16
0.24
0.1
3
0.04
max
0.34
0.40
Dimensions in mm
0.17
0.25
0.245
0.325
1.05
1.15
0.195
0.275
13-03-05
Fig. 11. Package outline DFN1010D-3 (SOT1215)
BAV70QA
Product data sheet
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BAV70QA
NXP Semiconductors
Dual common cathode high-speed switching diode
13. Soldering
Footprint information for reflow soldering of DFN1010D-3 package
SOT1215
1.2
0.45 (2x)
0.3
1.1
0.35 (2x)
0.4
0.25 (2x)
0.75
0.3
0.5
1.5
1.4
0.4
0.5
0.4
0.3
0.5
1.3
0.4
0.3
0.4
0.5
1.3
solder land
solder land plus solder paste
occupied area
solder resist
Dimensions in mm
Issue date
12-11-23
13-03-06
sot1215_fr
Fig. 12. Reflow soldering footprint for DFN1010D-3 (SOT1215)
BAV70QA
Product data sheet
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BAV70QA
NXP Semiconductors
Dual common cathode high-speed switching diode
14. Revision history
Table 8. Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
BAV70QA v.2
20160504
Product data sheet
-
BAV70QA v.1
Modification:
BAV70QA v.1
BAV70QA
Product data sheet
•
Characteristics table: corrected typing error, replaced parameter peak forward recovery
voltage VFRM with forward recovery voltage VFR
20160217
Product data sheet
-
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-
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BAV70QA
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Dual common cathode high-speed switching diode
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15. Legal information
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to the publication hereof.
Data sheet status
Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Definition
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BAV70QA
Product data sheet
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
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Limiting values — Stress above one or more limiting values (as defined in
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Dual common cathode high-speed switching diode
Trademarks
Notice: All referenced brands, product names, service names and
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Bitsound, CoolFlux, CoReUse, DESFire, FabKey, GreenChip,
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HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
BAV70QA
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Dual common cathode high-speed switching diode
16. Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking.......................................................................... 2
8. Limiting values............................................................. 3
9. Thermal characteristics............................................... 4
10. Characteristics............................................................ 5
11. Test information......................................................... 7
12. Package outline.......................................................... 7
13. Soldering..................................................................... 8
14. Revision history..........................................................9
15. Legal information..................................................... 10
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NXP Semiconductors N.V. 2016. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 4 May 2016
BAV70QA
Product data sheet
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