Data Sheet

DF
N1
01
0D
-3
BAV70QA
Dual common cathode high-speed switching diode
4 May 2016
Product data sheet
1. General description
Dual common cathode high-speed switching diode encapsulated in a leadless ultra small
DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and
solderable side pads.
2. Features and benefits
•
•
•
•
•
•
•
•
High switching speed: trr ≤ 4 ns
Low leakage current: IR ≤ 0.5 µA
Reverse voltage VR ≤ 100 V
Low capacitance Cd ≤ 1.5 pF
Ultra small SMD plastic package
Low package height of 0.37 mm
AEC-Q101 qualified
Suitable for Automatic Optical Inspection (AOI) of solder joint
3. Applications
•
•
High-speed switching
General-purpose switching
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
IF
forward current
Tamb = 25 °C; single diode loaded
-
-
300
mA
VR
reverse voltage
Tj = 25 °C
-
-
100
V
IR
reverse current
VR = 80 V; Tj = 25 °C
-
-
0.5
µA
trr
reverse recovery time
IF = 10 mA; IR = 10 mA; IR(meas) = 1 mA;
RL = 100 Ω; Tamb = 25 °C
-
-
4
ns
Per diode
[1]
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
BAV70QA
NXP Semiconductors
Dual common cathode high-speed switching diode
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
1
A1
anode (diode 1)
2
A2
anode (diode 2)
3
CC
common cathode
4
CC
common cathode
Simplified outline
Graphic symbol
1
A1
4
CC
3
A2
2
aaa-021931
Transparent top view
DFN1010D-3 (SOT1215)
6. Ordering information
Table 3. Ordering information
Type number
Package
BAV70QA
Name
Description
Version
DFN1010D-3
DFN1010D-3: plastic thermal enhanced ultra thin small outline
package; no leads; 3 terminals; body 1.1 x 1.0 x 0.37 mm
SOT1215
7. Marking
Table 4. Marking codes
Type number
Marking code
BAV70QA
Z 010
MARKING CODE
(EXAMPLE)
READING
DIRECTION
YEAR DATE
CODE
PIN 1
INDICATION MARK
VENDOR CODE
READING EXAMPLE:
MARK-FREE AREA
A 110
aaa-020723
Fig. 1. DFN1010D-3 (SOT1215) binary marking code description
BAV70QA
Product data sheet
All information provided in this document is subject to legal disclaimers.
4 May 2016
©
NXP Semiconductors N.V. 2016. All rights reserved
2 / 12
BAV70QA
NXP Semiconductors
Dual common cathode high-speed switching diode
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VR
reverse voltage
Tj = 25 °C
-
100
V
VRRM
repetitive peak reverse
voltage
-
100
V
IF
forward current
Per diode
Tamb = 25 °C; single diode loaded
[1]
-
300
mA
Tamb = 25 °C; double diode loaded
[1]
-
175
mA
IFRM
repetitive peak forward
current
tp ≤ 0.5 ms; δ ≤ 0.25 ; Tj = 25 °C
-
1
A
IFSM
non-repetitive peak
forward current
tp = 100 µs; Tj(init) = 25 °C; square wave
-
4
A
tp = 1 ms; Tj(init) = 25 °C; square wave
-
1.5
A
tp = 1 s; Tj(init) = 25 °C; square wave
-
0.5
A
[1]
-
325
mW
[2]
-
540
mW
Per device; one diode loaded
Ptot
total power dissipation
Tamb ≤ 25 °C
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
-55
150
°C
Tstg
storage temperature
-65
150
°C
[1]
[2]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm².
aaa-021932
0.4
IF
(A)
(1)
0.3
0.2
(2)
0.1
0.0
0
25
50
75
100
125
150
175
Tamb (°C)
(1) single diode loaded
(2) double diode loaded
Fig. 2. Forward current as a function of ambient temperature; derating curve
BAV70QA
Product data sheet
All information provided in this document is subject to legal disclaimers.
4 May 2016
©
NXP Semiconductors N.V. 2016. All rights reserved
3 / 12
BAV70QA
NXP Semiconductors
Dual common cathode high-speed switching diode
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
Rth(j-sp)
[1]
[2]
[3]
thermal resistance
from junction to solder
point
Min
Typ
Max
Unit
[1]
-
-
385
K/W
[2]
-
-
230
K/W
[3]
-
-
50
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm².
Soldering point of cathode tab.
aaa-020904
103
Zth(j-a)
(K/W)
duty cycle =
1
0.5
102
0.25
0.1
0.75
0.33
0.2
0.05
0.02
0.01
10
0
1
10-5
10-4
10-3
10-2
10-1
1
102
10
tp (s)
103
FR4 PCB, standard footprint
Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-020905
103
Zth(j-a)
(K/W)
duty cycle =
1
0.5
102
0.25
0.1
10
0.75
0.33
0.2
0.05
0.02
0.01
0
1
10-5
10-4
10-3
10-2
10-1
1
102
10
tp (s)
103
FR4 PCB, mounting pad for cathode 1 cm²
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
BAV70QA
Product data sheet
All information provided in this document is subject to legal disclaimers.
4 May 2016
©
NXP Semiconductors N.V. 2016. All rights reserved
4 / 12
BAV70QA
NXP Semiconductors
Dual common cathode high-speed switching diode
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
forward voltage
IF = 1 mA; Tj = 25 °C
-
-
715
mV
IF = 10 mA; Tj = 25 °C
-
-
855
mV
IF = 50 mA; Tj = 25 °C
-
-
1
V
IF = 150 mA; Tj = 25 °C
-
-
1.25
V
VR = 25 V; Tj = 25 °C
-
-
30
nA
VR = 80 V; Tj = 25 °C
-
-
0.5
µA
VR = 25 V; Tj = 150 °C
-
-
30
µA
VR = 80 V; Tj = 150 °C
-
-
100
µA
Per diode
VF
IR
reverse current
Cd
diode capacitance
VR = 0 V; f = 1 MHz; Tj = 25 °C
-
-
1.5
pF
trr
reverse recovery time
IF = 10 mA; IR = 10 mA; IR(meas) = 1 mA;
RL = 100 Ω; Tamb = 25 °C
-
-
4
ns
VFR
forward recovery
voltage
IF = 10 mA; tr = 20 ns; Tamb = 25 °C
-
-
1.75
V
aaa-021933
1
IR
(A)
IF
(A)
10-1
aaa-021934
10-4
10-5
(1)
(2)
10-6
10-7
(1)
(3)
(2)
10-2
10-8
(3)
10-9
(4)
10-3
(4)
10-10
10-11
10-4
0.0
0.5
1.0
1.5
VF (V)
10-12
2.0
(1) Tj = 150 °C
(2) Tj = 85 °C
(3) Tj = 25 °C
(4) Tj = −40 °C
0
20
40
60
80
VR (V)
100
(1) Tj = 150 °C
(2) Tj = 85 °C
(3) Tj = 25 °C
(4) Tj = −40 °C
Fig. 5. Forward current as a function of forward voltage; Fig. 6. Reverse current as a function of reverse voltage;
typical values
typical values
BAV70QA
Product data sheet
All information provided in this document is subject to legal disclaimers.
4 May 2016
©
NXP Semiconductors N.V. 2016. All rights reserved
5 / 12
BAV70QA
NXP Semiconductors
Dual common cathode high-speed switching diode
aaa-021935
0.6
Cd
(pF)
aaa-020909
10
IFSM
(A)
0.4
1
0.2
0.0
0
5
10
15
20
VR (V)
10-1
10-1
25
f = 1MHz; Tamb = 25 °C
Fig. 7. Diode capacitance as a function of reverse
voltage; typical values
BAV70QA
Product data sheet
1
102
10
tp (ms)
103
Based on square wave currents.
Tamb = 25 °C
Fig. 8. Non-repetitive forward current as a function of
pulse duration; maximum values
All information provided in this document is subject to legal disclaimers.
4 May 2016
©
NXP Semiconductors N.V. 2016. All rights reserved
6 / 12
BAV70QA
NXP Semiconductors
Dual common cathode high-speed switching diode
11. Test information
tr
D.U.T.
t
10 %
IF
RS = 50 Ω
tp
+ IF
SAMPLING
OSCILLOSCOPE
trr
t
Ri = 50 Ω
V = VR + IF × RS
mga881
(1)
90 %
VR
input signal
output signal
(1) IR = 1 mA
Fig. 9. Reverse recovery time test circuit and waveforms
I
RS = 50 Ω
1 kΩ
450 Ω
I
V
90 %
OSCILLOSCOPE
D.U.T.
VFR
Ri = 50 Ω
10 %
tr
t
tp
t
input signal
output signal
mga882
Fig. 10. Forward recovery voltage test circuit and waveforms
Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC)
standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in
automotive applications.
12. Package outline
0.87
0.95
0.75
1
0.95
1.05
0.22
0.30
2
0.16
0.24
0.1
3
0.04
max
0.34
0.40
Dimensions in mm
0.17
0.25
0.245
0.325
1.05
1.15
0.195
0.275
13-03-05
Fig. 11. Package outline DFN1010D-3 (SOT1215)
BAV70QA
Product data sheet
All information provided in this document is subject to legal disclaimers.
4 May 2016
©
NXP Semiconductors N.V. 2016. All rights reserved
7 / 12
BAV70QA
NXP Semiconductors
Dual common cathode high-speed switching diode
13. Soldering
Footprint information for reflow soldering of DFN1010D-3 package
SOT1215
1.2
0.45 (2x)
0.3
1.1
0.35 (2x)
0.4
0.25 (2x)
0.75
0.3
0.5
1.5
1.4
0.4
0.5
0.4
0.3
0.5
1.3
0.4
0.3
0.4
0.5
1.3
solder land
solder land plus solder paste
occupied area
solder resist
Dimensions in mm
Issue date
12-11-23
13-03-06
sot1215_fr
Fig. 12. Reflow soldering footprint for DFN1010D-3 (SOT1215)
BAV70QA
Product data sheet
All information provided in this document is subject to legal disclaimers.
4 May 2016
©
NXP Semiconductors N.V. 2016. All rights reserved
8 / 12
BAV70QA
NXP Semiconductors
Dual common cathode high-speed switching diode
14. Revision history
Table 8. Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
BAV70QA v.2
20160504
Product data sheet
-
BAV70QA v.1
Modification:
BAV70QA v.1
BAV70QA
Product data sheet
•
Characteristics table: corrected typing error, replaced parameter peak forward recovery
voltage VFRM with forward recovery voltage VFR
20160217
Product data sheet
-
All information provided in this document is subject to legal disclaimers.
4 May 2016
-
©
NXP Semiconductors N.V. 2016. All rights reserved
9 / 12
BAV70QA
NXP Semiconductors
Dual common cathode high-speed switching diode
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
15. Legal information
Right to make changes — NXP Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Data sheet status
Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Definition
Suitability for use in automotive applications — This NXP
Semiconductors product has been qualified for use in automotive
applications. Unless otherwise agreed in writing, the product is not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer's own
risk.
Please consult the most recently issued document before initiating or
completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nxp.com.
Definitions
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
NXP Semiconductors does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences
of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local NXP
Semiconductors sales office. In case of any inconsistency or conflict with the
short data sheet, the full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
Disclaimers
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, NXP Semiconductors does not give
any representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
BAV70QA
Product data sheet
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes
no representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their
applications and products using NXP Semiconductors products, and NXP
Semiconductors accepts no liability for any assistance with applications or
customer product design. It is customer’s sole responsibility to determine
whether the NXP Semiconductors product is suitable and fit for the
customer’s applications and products planned, as well as for the planned
application and use of customer’s third party customer(s). Customers should
provide appropriate design and operating safeguards to minimize the risks
associated with their applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default
in the customer’s applications or products, or the application or use by
customer’s third party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications
and the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
All information provided in this document is subject to legal disclaimers.
4 May 2016
©
NXP Semiconductors N.V. 2016. All rights reserved
10 / 12
BAV70QA
NXP Semiconductors
Dual common cathode high-speed switching diode
Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Bitsound, CoolFlux, CoReUse, DESFire, FabKey, GreenChip,
HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, MIFARE,
MIFARE Plus, MIFARE Ultralight, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP
Semiconductors N.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
BAV70QA
Product data sheet
All information provided in this document is subject to legal disclaimers.
4 May 2016
©
NXP Semiconductors N.V. 2016. All rights reserved
11 / 12
BAV70QA
NXP Semiconductors
Dual common cathode high-speed switching diode
16. Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking.......................................................................... 2
8. Limiting values............................................................. 3
9. Thermal characteristics............................................... 4
10. Characteristics............................................................ 5
11. Test information......................................................... 7
12. Package outline.......................................................... 7
13. Soldering..................................................................... 8
14. Revision history..........................................................9
15. Legal information..................................................... 10
©
NXP Semiconductors N.V. 2016. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 4 May 2016
BAV70QA
Product data sheet
All information provided in this document is subject to legal disclaimers.
4 May 2016
©
NXP Semiconductors N.V. 2016. All rights reserved
12 / 12