Si4943CDY Datasheet

New Product
Si4943CDY
Vishay Siliconix
Dual P-Channel 20-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
RDS(on) (Ω)
ID (A)a, e
0.0192 at VGS = - 10 V
-8
0.0330 at VGS = - 4.5 V
-8
VDS (V)
- 20
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
Qg (Typ.)
20
APPLICATIONS
• Load Switching
- Computer
- Game Systems
• Battery Switching
- 2-Cell Li-Ion
SO-8
S1
1
8
D1
G1
2
7
D1
S2
3
6
D2
G2
4
5
D2
S1
G1
S2
G2
Top View
Ordering Information: Si4943CDY-T1-E3 (Lead (Pb)-free)
Si4943CDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
D1
D2
P-Channel MOSFET
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Symbol
VDS
VGS
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
ID
TC = 25 °C
TA = 25 °C
Pulsed Sorce-Drain Current
Single Pulse Avalanche Current
Single-Pulse Avalanche Energy
L = 0.1 mH
Maximum Power Dissipation
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
IS
- 1.7b, c
- 30
- 11
6
3.1
2
ISM
IAS
EAS
PD
2b, c
1.28b, c
- 50 to 150
TJ, Tstg
Operating Junction and Storage Temperature Range
Unit
V
- 8b, c, e
- 6.7b, c
- 30
- 2.5
IDM
Pulsed Drain Current (10 µs Pulse Width)
Source-Drain Current Diode Current
Limit
- 20
± 20
- 8e
- 8e
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Limit
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady State
Symbol
RthJA
RthJF
Typical
50
30
Maximum
62.5
40
Unit
°C/W
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 110 °C/W.
e. Package Limited.
Document Number: 69985
S09-0704-Rev. B, 27-Apr-09
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1
New Product
Si4943CDY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = - 250 µA
- 20
Typ.a
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
ΔVDS/TJ
ΔVGS(th)/TJ
ID = - 250 µA
VGS(th)
VDS = VGS, ID = - 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currentb
ID(on)
Gate Threshold Voltage
Drain-Source On-State Resistanceb
RDS(on)
Forward Transconductanceb
Dynamica
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
gfs
tr
Rise Time
td(off)
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode
Current
a
Pulse Diode Forward Current
Body Diode Voltage
V
nA
VDS = - 20 V, VGS = 0 V
-1
- 10
VDS = 5 V, VGS = - 10 V
VGS = - 10 V, ID = - 8.3 A
- 30
0.0192
VGS = - 4.5 V, ID = - 6.4 A
0.0275
0.0330
VDS = - 10 V, ID = - 8.3 A
19
1945
VDS = - 10 V, VGS = 0 V, f = 1 MHz
460
pF
385
VDS = - 10 V, VGS = - 10 V, ID = - 8.3 A
VDS = - 10 V, VGS = - 4.5 V, ID = - 8.3 A
41
62
20
30
7
VDD = - 10 V, RL = 1.5 Ω
ID ≅ - 6.7 A, VGEN = - 10 V, Rg = 1 Ω
0.5
2.5
5
13
20
11
17
35
53
15
75
VDD = - 10 V, RL = 1.5 Ω
ID ≅ - 6.7 A, VGEN = - 4.5 V, Rg = 1 Ω
71
107
29
44
15
23
TC = 25 °C
- 2.5
ISM
VSD
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
nC
9
f = 1 MHz
10
Body Diode Reverse Recovery Time
Ω
S
50
IS
µA
A
0.0160
tf
Fall Time
-3
- 100
tf
td(off)
Turn-Off Delay Time
-1
td(on)
tr
Rise Time
mV/°C
5.4
VDS = - 20 V, VGS = 0 V, TJ = 55 °C
td(on)
Turn-On Delay Time
V
- 21
Ω
ns
A
- 30
IS = - 6.7 A
IF = - 6.7 A, dI/dt = 100 A/µs, TJ = 25 °C
- 0.77
- 1.2
V
30
45
ns
17
26
nC
13
17
ns
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 69985
S09-0704-Rev. B, 27-Apr-09
New Product
Si4943CDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
8
30
VGS = 10 V thru 5 V
24
I D - Drain Current (A)
I D - Drain Current (A)
6
VGS = 4 V
18
12
4
TC = 125 °C
2
6
TC = 25 °C
VGS = 3 V
VGS = 2 V
TC = - 55 °C
0
0
0
1
2
3
4
0
5
1
Output Characteristics
4
Transfer Characteristics
0.08
3000
2400
0.06
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
3
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
VGS = 4.5 V
0.04
Ciss
1800
1200
Coss
0.02
600
Crss
VGS = 10 V
0.00
0
0
5
10
15
20
25
30
0
4
ID - Drain Current (A)
8
12
16
20
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
10
1.5
VGS = 10 V, ID = 8.3 A
ID = 8.3 A
8
R DS(on) - On-Resistance
(Normalized)
VGS - Gate-to-Source Voltage (V)
2
VDS = 10 V
6
VDS = 16 V
4
1.3
1.1
VGS = 4.5 V, ID = 6.4 A
0.9
2
0
0
10
20
30
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 69985
S09-0704-Rev. B, 27-Apr-09
40
0.7
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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New Product
Si4943CDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.04
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
ID = 8.3 A
10
TJ = 150 °C
1
TJ = 25 °C
0.03
TJ = 125 °C
0.02
0.01
TJ = 25 °C
0
0.1
0.0
0.3
0.6
0.9
0
1.2
4
VSD - Source-to-Drain Voltage (V)
8
12
16
20
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
2.5
100
2.3
80
ID = 250 µA
Power (W)
VGS(th) (V)
2.1
1.9
60
40
1.7
20
1.5
1.3
- 50
- 25
0
25
50
75
100
125
0
0.001
150
0.01
TJ - Temperature (°C)
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
Threshold Voltage
100
Limited by RDS(on)*
I D - Drain Current (A)
10
1 ms
10 ms
1
100 ms
1s
10 s
DC
0.1
BVDSS
Limited
TA = 25 °C
Single Pulse
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 69985
S09-0704-Rev. B, 27-Apr-09
New Product
Si4943CDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
12
I D - Drain Current (A)
9
Package Limited
6
3
0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
Current Derating*
4
1.5
1.2
Power (W)
Power (W)
3
2
0.9
0.6
1
0.3
0
0.0
0
25
50
75
100
125
TC - Case Temperature (°C)
Power Derating, Junction-to-Foot
150
0
25
50
75
100
125
150
TA - Ambient Temperature (°C)
Power Derating, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 69985
S09-0704-Rev. B, 27-Apr-09
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New Product
Si4943CDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 85 °C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10 -4
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
100
10
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
0.001
10 -4
10 -3
10 -2
10 -1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?69985.
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Document Number: 69985
S09-0704-Rev. B, 27-Apr-09
Package Information
Vishay Siliconix
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
8
6
7
5
E
1
3
2
H
4
S
h x 45
D
C
0.25 mm (Gage Plane)
A
e
B
All Leads
q
A1
L
0.004"
MILLIMETERS
INCHES
DIM
Min
Max
Min
Max
A
1.35
1.75
0.053
0.069
A1
0.10
0.20
0.004
0.008
B
0.35
0.51
0.014
0.020
C
0.19
0.25
0.0075
0.010
D
4.80
5.00
0.189
0.196
E
3.80
4.00
0.150
e
0.101 mm
1.27 BSC
0.157
0.050 BSC
H
5.80
6.20
0.228
0.244
h
0.25
0.50
0.010
0.020
L
0.50
0.93
0.020
0.037
q
0°
8°
0°
8°
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
Document Number: 71192
11-Sep-06
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Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-8
0.172
(4.369)
0.028
0.022
0.050
(0.559)
(1.270)
0.152
(3.861)
0.047
(1.194)
0.246
(6.248)
(0.711)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
Return to Index
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Document Number: 72606
Revision: 21-Jan-08
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Revision: 02-Oct-12
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Document Number: 91000