Si4565ADY Vishay Siliconix N- and P-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.039 at VGS = 10 V 6.6 0.050 at VGS = 4.5 V 5.8 0.054 at VGS = - 10 V - 4.5 0.072 at VGS = - 4.5 V - 3.9 VDS (V) N-Channel P-Channel 40 - 40 Qg (Typ.) 6.6 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested APPLICATIONS 9 • CCFL Inverter D1 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 S2 G2 G1 Top View Ordering Information: Si4565ADY-T1-E3 (Lead (Pb)-free) Si4565ADY-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 D2 N-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Continuous Drain Current (TJ = 150 °C) N-Channel 40 ± 16 6.6 5.3 - 5.6 - 4.5 5.3b, c 4.2b, c 30 2.5 - 4.5b, c - 3.6b, c - 30 - 2.5 1.7b, c 30 13 8.5 3.1 2 - 1.7b, c - 30 16 13 3.1 2 2b, c 1.28b, c 2b, c 1.28b, c ID IDM Pulsed Drain Current (10 µs Pulse Width) TC = 25 °C TA = 25 °C Source-Drain Current Diode Current Pulsed Source-Drain Current Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C IS ISM IAS EAS PD TJ, Tstg Operating Junction and Storage Temperature Range P-Channel - 40 Unit V A mJ W - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) t ≤ 10 s Steady-State Symbol RthJA RthJF N-Channel Typ. Max. 52 62.5 32 40 P-Channel Typ. Max. 50 62.5 30 38 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 120 °C/W (N-Channel) and 110 °C/W (P-Channel). Document Number: 73880 S09-0393-Rev. B, 09-Mar-09 www.vishay.com 1 Si4565ADY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ.a Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate Threshold Voltage Gate-Body Leakage VDS ΔVDS/TJ ΔVDS(th)/TJ VGS(th) IGSS VGS = 0 V, ID = 250 µA N-Ch 40 VGS = 0 V, ID = - 250 µA P-Ch - 40 ID = 250 µA N-Ch 37 ID = - 250 µA P-Ch - 38 ID = 250 µA N-Ch -5 4.0 ID = - 250 µA P-Ch VDS = VGS, ID = 250 µA N-Ch 0.8 2.2 VDS = VGS, ID = - 250 µA P-Ch - 0.8 - 2.2 VDS = 0 V, VGS = ± 16 V VDS = 40 V, VGS = 0 V Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Forward Transconductanceb IDSS ID(on) RDS(on) gfs V N-Ch P-Ch 100 - 100 N-Ch 1 VDS = - 40 V, VGS = 0 V P-Ch -1 VDS = 40 V, VGS = 0 V, TJ = 55 °C N-Ch 10 VDS = - 40 V, VGS = 0 V, TJ = 55 °C P-Ch - 10 VDS = 5 V, VGS = 10 V N-Ch 20 VDS = - 5 V, VGS = - 10 V P-Ch - 20 VGS = 10 V, ID = 5 A N-Ch 0.032 VGS = - 10 V, ID = - 4.5 A P-Ch 0.045 0.054 VGS = 4.5 V, ID = 4 A N-Ch 0.041 0.050 VGS = - 4.5 V, ID = - 3.9 A P-Ch 0.059 0.072 VDS = 15 V, ID = 5 A N-Ch 15 VDS = - 15 V, ID = - 4.5 A P-Ch 13 N-Ch 625 P-Ch 805 nA µA A 0.039 Ω S Dynamica Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss N-Channel VDS = 20 V, VGS = 0 V, f = 1 MHz Coss Crss P-Channel VDS = - 20 V, VGS = 0 V, f = 1 MHz VDS = 20 V, VGS = 10 V, ID = 5 A Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance www.vishay.com 2 Qg VDS = - 20 V, VGS = - 10 V, ID = - 5 A Rg 88 P-Ch 120 N-Ch 50 85 N-Ch 14.4 P-Ch 18.5 28 N-Ch 6.6 10 14 P-Ch 9 N-Ch 1.6 P-Channel VDS = - 20 V, VGS = - 4.5 V, ID = - 5 A P-Ch 2 N-Ch 2.3 f = 1 MHz pF P-Ch N-Channel VDS = 20 V, VGS = 4.5 V, ID = 5 A Qgs Qgd N-Ch 22 P-Ch 3.6 N-Ch 2.3 3.5 P-Ch 11.5 18 nC Ω Document Number: 73880 S09-0393-Rev. B, 09-Mar-09 Si4565ADY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ.a Max. Unit Dynamica td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time N-Channel VDD = 20 V, RL = 4 Ω ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω P-Channel VDD = - 20 V, RL = 4 Ω ID ≅ - 5 A, VGEN = - 10 V, Rg = 1 Ω N-Channel VDD = 20 V, RL = 4 Ω ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω P-Channel VDD = - 20 V, RL = 4 Ω ID ≅ - 5 A, VGEN = - 4.5 V, Rg = 1 Ω N-Ch 9 15 P-Ch 7 14 N-Ch 51 77 P-Ch 42 65 N-Ch 21 32 P-Ch 33 50 N-Ch 6 10 P-Ch 56 85 N-Ch 13 20 P-Ch 21 32 N-Ch 85 128 P-Ch 90 135 N-Ch 17 26 P-Ch 44 66 N-Ch 7 11 P-Ch 56 85 ns ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current a Body Diode Voltage IS TC = 25 °C ISM N-Ch 2.5 P-Ch - 2.5 N-Ch 30 P-Ch VSD - 30 IS = 1.7 A N-Ch 0.79 1.2 IS = - 1.7 A P-Ch - 0.79 - 1.2 N-Ch 30 45 P-Ch 27 45 Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr N-Channel IF = 1.7 A, dI/dt = 100 A/µs, TJ = 25 °C N-Ch 30 45 P-Ch 17 26 Reverse Recovery Fall Time ta P-Channel IF = - 1.7 A, dI/dt = - 100 A/µs, TJ = 25 °C N-Ch 17 Reverse Recovery Rise Time tb A P-Ch 13 N-Ch 13 P-Ch 14 V ns nC ns Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 73880 S09-0393-Rev. B, 09-Mar-09 www.vishay.com 3 Si4565ADY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2.0 24 VGS = 10 thru 4 V 18 12 1.6 I D – Drain Current (A) I D – Drain Current (A) 30 3V 1.2 0.8 TC = 125 °C 6 0.4 0 0.0 0.0 0.0 25 °C - 55 °C 0.5 1.0 1.5 2.0 2.5 0.8 VDS – Drain-to-Source Voltage (V) 2.4 3.2 4.0 VGS – Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.052 900 0.047 720 C – Capacitance (pF) R DS(on) – On-Resistance (Ω) 1.6 VGS = 4.5 V 0.042 0.038 VGS = 10 V Ciss 540 360 0.033 Crss 180 Coss 0.028 0 0 4 8 12 16 0 20 6 12 24 30 VDS – Drain-to-Source Voltage (V) ID – Drain Current (A) On-Resistance vs. Drain Current and Gate Voltage Capacitance 10 1.8 ID = 5 A ID = 5 A 8 VDS = 10 V VDS = 20 V VDS = 30 V 4 1.5 (Normalized) 6 R DS(on) – On-Resistance V GS – Gate-to-Source Voltage (V) 18 VGS = 10 V 1.2 VGS = 4.5 V 0.9 2 0 0 3 6 9 Qg – Total Gate Charge (nC) Gate Charge www.vishay.com 4 12 15 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ – Junction Temperature ( C) On-Resistance vs. Junction Temperature Document Number: 73880 S09-0393-Rev. B, 09-Mar-09 Si4565ADY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.30 TJ = 150 °C 10 25 °C 1 R DS(on) – Drain-to-Source On-Resistance (Ω) I S – Source Current (A) 100 0.1 0.0 0.2 0.4 0.6 0.8 1.0 0.24 0.18 0.12 TA = 125 °C 0.06 TA = 25 °C 0.00 0 1.2 2 VSD – Source-to-Drain Voltage (V) 4 6 8 10 VGS – Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 60 0.4 I D = 250 µA 48 Power (W) VGS(th) Variance (V) 0.2 0.0 ID = 5 mA - 0.2 - 0.4 - 0.6 - 50 36 24 12 0 - 25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 TJ – Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 10 100 Limited by RDS(on)* I D – Drain Current (A) 10 1 ms 1 10 ms 100 ms 0.1 TA = 25 °C Single Pulse 0.01 0.1 * VGS 1s 10 s DC 1 10 100 VDS – Drain-to-Source Voltage (V) minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 73880 S09-0393-Rev. B, 09-Mar-09 www.vishay.com 5 Si4565ADY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 8 ID – Drain Current (A) 6 5 3 2 0 0 25 50 75 100 125 150 TC – Case Temperature (°C) 4.0 1.5 3.2 1.2 Power Dissipation (W) Power Dissipation (W) Current Derating* 2.4 1.6 0.8 0.9 0.6 0.3 0.0 0.0 0 25 50 75 100 125 150 0 25 50 75 100 125 TC – Case Temperature (°C) TA – Ambient Temperature (°C) Power Derating, Junction-to-Foot Power Derating, Junction-to-Ambient 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 6 Document Number: 73880 S09-0393-Rev. B, 09-Mar-09 Si4565ADY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 0.02 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 110 °C/W 3. TJM – T = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10-4 10-3 10-2 10-1 10 1 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Document Number: 73880 S09-0393-Rev. B, 09-Mar-09 www.vishay.com 7 Si4565ADY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 20 20 I D – Drain Current (A) I D – Drain Current (A) VGS = 10 thru 4 V 16 12 3V 8 4 16 12 8 TC = 125 °C 4 25 °C - 55 °C 0 0 1 2 3 4 0 0.0 5 0.8 VDS – Drain-to-Source Voltage (V) 3.2 4.0 Transfer Characteristics 0.08 1240 0.07 992 C – Capacitance (pF) RDS(on) – On-Resistance (Ω) 2.4 VGS – Gate-to-Source Voltage (V) Output Characteristics VGS = 4.5 V 0.06 0.05 1.6 VGS = 10 V Ciss 744 496 248 0.04 Coss 0.03 Crss 0 0 4 8 12 16 20 0 8 ID – Drain Current (A) 16 24 32 40 VDS – Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 10 1.8 1.6 8 R DS(on) – On-Resistance (Normalized) V GS – Gate-to-Source Voltage (V) I D = 4.5 A VDS = 10 V 6 VDS = 20 V 4 2 1.4 1.2 1.0 0.8 0 0 5 10 15 Qg – Total Gate Charge (nC) Gate Charge www.vishay.com 8 20 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ – Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 73880 S09-0393-Rev. B, 09-Mar-09 Si4565ADY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.30 TJ = 150 °C 10 R DS(on) – Drain-to-Source On-Resistance (Ω) I S – S o u rc e C u rre n t (A ) 100 25 °C ID = 6 A 0.24 0.18 0.12 TA = 125 °C 0.06 TA = 25 °C 0.00 1 0.0 0.3 0.6 1.2 0.9 0 1.5 2 VSD – Source-to-Drain Voltage (V) 0.6 100 0.4 80 Power (W) VGS(th) Variance (V) 6 8 10 On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 0.2 ID = 250 µA 0.0 - 0.2 - 0.4 - 50 4 VGS – Gate-to-Source Voltage (V) 60 40 20 - 25 0 25 50 75 100 125 150 0 0.001 0.01 TJ – Temperature (°C) 0.1 1 10 Time (s) Threshold Voltage Single Pulse Power vs. Junction-to-Ambient 100 Limited by RDS(on)* I D – Drain Current (A) 10 1 ms 1 10 ms 100 ms 0.1 TA = 25 °C Single Pulse 0.01 0.1 * VGS 1s 10 s DC 1 10 100 VDS – Drain-to-Source Voltage (V) minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 73880 S09-0393-Rev. B, 09-Mar-09 www.vishay.com 9 Si4565ADY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 7 ID – Drain Current (A) 6 4 3 1 0 0 25 50 100 75 125 150 TC – Case Temperature (°C) 4.0 1.5 3.2 1.2 Power Dissipation (W) Power Dissipation (W) Current Derating* 2.4 1.6 0.8 0.9 0.6 0.3 0.0 0.0 0 25 50 75 100 125 TC – Case Temperature (°C) Power Derating, Junction-to-Foot 150 0 25 50 75 100 125 150 TA – Ambient Temperature (°C) Power Derating, Junction-to-Ambient * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 10 Document Number: 73880 S09-0393-Rev. B, 09-Mar-09 Si4565ADY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: Notes: 0.1 PDM P DM 0.05 tt11 tt22 tt1 1. Duty Duty Cycle, Cycle, D D == 1 1. tt22 = 93 120°C°C/W 2. Per Per Unit Unit Base Base == R RthJA 2. thJA = 0.02 (t) (t) 3. TTJM T == P PDM ZthJA 3. JM –– T DMZ thJA 4. Surface Surface Mounted Mounted 4. Single Pulse 0.01 10-4 10-3 10-2 10-1 10 1 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73880. Document Number: 73880 S09-0393-Rev. B, 09-Mar-09 www.vishay.com 11 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000